the material being a silicon nitride not containing oxygen

Industry

CPC
H01L21/0217

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/0217the material being a silicon nitride not containing oxygen

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit device with low threshold voltage
- Patent number 12,272,604
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Station-to-station control of backside bow compensation deposition
- Patent number 12,272,608
- Issue date Apr 8, 2025
- Lam Research Corporation
- Yanhui Huang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrated assemblies and methods of forming integrated assemblies
- Patent number 12,274,063
- Issue date Apr 8, 2025
- Jordan D. Greenlee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an electronic structure using reforming gas, syst...
- Patent number 12,272,548
- Issue date Apr 8, 2025
- ASM IP Holding B.V.
- Shinya Yoshimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-resistance resistor based on silicon carbide and manufacturing...
- Patent number 12,268,013
- Issue date Apr 1, 2025
- Talyuan University of Technology
- Yuying Xi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate processing apparatus, method of manufacturing semiconduct...
- Patent number 12,266,522
- Issue date Apr 1, 2025
- Kokusai Electric Corporation
- Kazuyuki Okuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with dielectric spacers and method of fabrication therefor
- Patent number 12,266,713
- Issue date Apr 1, 2025
- NXP USA, INC.
- Darrell Glenn Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with source/drain contact formed using bottom-...
- Patent number 12,266,688
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating layer structure having target topological pr...
- Patent number 12,266,540
- Issue date Apr 1, 2025
- ASM IP Holding B.V.
- Eiichiro Shiba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method, semiconductor memory dev...
- Patent number 12,261,041
- Issue date Mar 25, 2025
- Kioxia Corporation
- Tsunehiro Ino
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,261,198
- Issue date Mar 25, 2025
- SK Hynix Inc.
- Jun Hyuk Seo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Forming low-stress silicon nitride layer through hydrogen treatment
- Patent number 12,261,036
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming nitrogen-containing layers as oxidation blocking layers
- Patent number 12,261,042
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing interlayer insulating layer and method for man...
- Patent number 12,261,179
- Issue date Mar 25, 2025
- BOE Technology Group Co., Ltd.
- Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate processing with selective etching
- Patent number 12,261,053
- Issue date Mar 25, 2025
- Tokyo Electron Limited
- Ivo Otto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures with etch stop layers for advan...
- Patent number 12,261,122
- Issue date Mar 25, 2025
- Intel Corporation
- Atul Madhavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Topology selective and sacrificial silicon nitride layer for genera...
- Patent number 12,255,240
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yang Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 12,255,247
- Issue date Mar 18, 2025
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMP safe alignment mark
- Patent number 12,255,150
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Huang-Jen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multigate device structure with engineered cladding and method maki...
- Patent number 12,249,539
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Wen Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface treatment method, method for producing semiconductor substr...
- Patent number 12,249,513
- Issue date Mar 11, 2025
- Fujimi Incorporated
- Tsutomu Yoshino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing semiconductor devices
- Patent number 12,237,265
- Issue date Feb 25, 2025
- Samsung Electronics Co., Ltd.
- Sangoh Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,237,398
- Issue date Feb 25, 2025
- United Microelectronics Corp.
- Chia-Ming Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition method
- Patent number 12,237,167
- Issue date Feb 25, 2025
- Tokyo Electron Limited
- Ken Okoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having STI region
- Patent number 12,238,924
- Issue date Feb 25, 2025
- Micron Technology, Inc.
- Kunihiro Tsubomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including device isolation layer with multiple...
- Patent number 12,237,208
- Issue date Feb 25, 2025
- Samsung Electronics Co., Ltd.
- Hyunchul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Organoaminosilane precursors and methods for depositing films compr...
- Patent number 12,230,496
- Issue date Feb 18, 2025
- VERSUM MATERIALS US, LLC
- Mark Leonard O'Neill
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods of post treating silicon nitride based dielectric films wit...
- Patent number 12,230,499
- Issue date Feb 18, 2025
- Applied Materials, Inc.
- Yong Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned inner spacer on gate-all-around structure and methods...
- Patent number 12,230,692
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsungyu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of depositing silicon nitride films
- Patent number 12,230,495
- Issue date Feb 18, 2025
- Lam Research Corporation
- James S. Sims
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING APPARATUS
- Publication number 20250118550
- Publication date Apr 10, 2025
- TOKYO ELECTRON LIMITED
- Munehito KAGAYA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS OF FORMING MEMORY STRUCTURES FOR THREE-DIMENSIONAL NONVOLAT...
- Publication number 20250118547
- Publication date Apr 10, 2025
- IMEC vzw
- Sana Rachidi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT TRANSISTOR
- Publication number 20250118613
- Publication date Apr 10, 2025
- STMicroelectronics International N.V.
- Paolo COLPANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEAT DISSIPATION FOR FIELD EFFECT TRANSISTORS
- Publication number 20250118548
- Publication date Apr 10, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kai-Fang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20250120083
- Publication date Apr 10, 2025
- KIOXIA Corporation
- Shinya ARAI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE WITH AIR SPACERS, AND...
- Publication number 20250112169
- Publication date Apr 3, 2025
- NANYA TECHNOLOGY CORPORATION
- FENG-WEN HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DIELECTRIC GROWTH FOR DIRECTING CONTACT TO GATE OR CONTAC...
- Publication number 20250112037
- Publication date Apr 3, 2025
- Intel Corporation
- Mark KOEPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER SEMICONDUCTOR COMPONENT HAVING A PLURA...
- Publication number 20250113514
- Publication date Apr 3, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE WITH AIR SPACERS, AND...
- Publication number 20250112171
- Publication date Apr 3, 2025
- NANYA TECHNOLOGY CORPORATION
- FENG-WEN HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR SYNTHESIS OF MONOLAYER TRANSITION METAL DICHALOCOGENIDE
- Publication number 20250105006
- Publication date Mar 27, 2025
- INDIAN INSTITUTE OF SCIENCE EDUCATION AND RESEARCH, PUNE (IISER PUNE)
- Gokul M. A
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICOND...
- Publication number 20250101583
- Publication date Mar 27, 2025
- Kokusai Electric Corporation
- Hidetoshi Mimura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LOW RESISTANCE INTERCONNECT STRUCTURE FOR SEMICONDUCTOR DEVICE
- Publication number 20250105147
- Publication date Mar 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jason HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CYCLIC LOW TEMPERATURE FILM GROWTH PROCESSES
- Publication number 20250095983
- Publication date Mar 20, 2025
- TOKYO ELECTRON LIMITED
- Jianping Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED ASSEMBLIES HAVING VERTICALLY-SPACED CHANNEL MATERIAL SEG...
- Publication number 20250098168
- Publication date Mar 20, 2025
- Lodestar Licensing Group LLC
- John D. Hopkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLUGS FOR INTERCONNECT LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCT...
- Publication number 20250098258
- Publication date Mar 20, 2025
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-INSULATOR-METAL (MIM) CAPACITORS WITH IMPROVED RELIABILITY
- Publication number 20250089277
- Publication date Mar 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Yueh Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SILICON NITRIDE FILMS
- Publication number 20250087477
- Publication date Mar 13, 2025
- Applied Materials, Inc.
- Joseph AuBuchon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTOR INCLUDING A HYDROGEN-BLOCKING DIELECTRIC BARRI...
- Publication number 20250089294
- Publication date Mar 13, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Neil Quinn Murray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM-FORMING METHOD AND FILM-FORMING APPARATUS
- Publication number 20250084530
- Publication date Mar 13, 2025
- TOKYO ELECTRON LIMITED
- Yohei MATSUYAMA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250079158
- Publication date Mar 6, 2025
- Sumitomo Electric Industries, Ltd.
- Takahide HIRASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR WET ATOMIC LAYER ETCHING OF MOLYBDENUM
- Publication number 20250079180
- Publication date Mar 6, 2025
- TOKYO ELECTRON LIMITED
- Tulashi Dahal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20250081498
- Publication date Mar 6, 2025
- United Semiconductor (Xiamen) Co., Ltd.
- Jun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND RELATED SE...
- Publication number 20250081588
- Publication date Mar 6, 2025
- ASM IP HOLDING B.V.
- Chiyu Zhu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NITROGEN-BASED OXYGEN-FREE DIPOLES, RELATED DEVICES, RELATED SYSTEM...
- Publication number 20250079156
- Publication date Mar 6, 2025
- ASM IP HOLDING B.V.
- Giuseppe Alessio Verni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF IMPROVING METAL OXIDE DEPOSITION WITH NITROGEN OXIDE AND...
- Publication number 20250079157
- Publication date Mar 6, 2025
- Entegris, Inc.
- Rong Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE-CHAMBER REACTOR FOR SELECTIVE DEPOSITION OF SILICON NITRID...
- Publication number 20250066921
- Publication date Feb 27, 2025
- ASM IP HOLDING B.V.
- Ranjit Rohidas Borude
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON NITRIDE DEPOSITION
- Publication number 20250069882
- Publication date Feb 27, 2025
- LAM RESEARCH CORPORATION
- Awnish Gupta
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20250072078
- Publication date Feb 27, 2025
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FA...
- Publication number 20250066950
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Changseok LEE
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR PROCESSING SYSTEM, A SEMICONDUCTOR PRECURSOR STORAGE...
- Publication number 20250059644
- Publication date Feb 20, 2025
- ASM IP HOLDING B.V.
- Dieter Pierreux
- H01 - BASIC ELECTRIC ELEMENTS

the material being a silicon nitride not containing oxygen

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Integrated circuit device with low threshold voltage

Station-to-station control of backside bow compensation deposition

Integrated assemblies and methods of forming integrated assemblies

Method of forming an electronic structure using reforming gas, syst...

High-resistance resistor based on silicon carbide and manufacturing...

Substrate processing apparatus, method of manufacturing semiconduct...

Transistor with dielectric spacers and method of fabrication therefor

Semiconductor device with source/drain contact formed using bottom-...

Method for fabricating layer structure having target topological pr...

Semiconductor device manufacturing method, semiconductor memory dev...

Semiconductor device and method for fabricating the same

Forming low-stress silicon nitride layer through hydrogen treatment

Forming nitrogen-containing layers as oxidation blocking layers

Method for preparing interlayer insulating layer and method for man...

Substrate processing with selective etching

Contact over active gate structures with etch stop layers for advan...

Topology selective and sacrificial silicon nitride layer for genera...

Trench contact structures for advanced integrated circuit structure...

CMP safe alignment mark

Multigate device structure with engineered cladding and method maki...

Surface treatment method, method for producing semiconductor substr...

Methods of manufacturing semiconductor devices

Semiconductor device and method for fabricating the same

Deposition method

Semiconductor device having STI region

Semiconductor device including device isolation layer with multiple...

Organoaminosilane precursors and methods for depositing films compr...

Methods of post treating silicon nitride based dielectric films wit...

Self-aligned inner spacer on gate-all-around structure and methods...

Method of depositing silicon nitride films

Patents Applicationslast 30 patents

SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING APPARATUS

METHODS OF FORMING MEMORY STRUCTURES FOR THREE-DIMENSIONAL NONVOLAT...

HEMT TRANSISTOR

HEAT DISSIPATION FOR FIELD EFFECT TRANSISTORS

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE WITH AIR SPACERS, AND...

SELECTIVE DIELECTRIC GROWTH FOR DIRECTING CONTACT TO GATE OR CONTAC...

METHOD FOR PRODUCING A POWER SEMICONDUCTOR COMPONENT HAVING A PLURA...

SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE WITH AIR SPACERS, AND...

PROCESS FOR SYNTHESIS OF MONOLAYER TRANSITION METAL DICHALOCOGENIDE

SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICOND...

LOW RESISTANCE INTERCONNECT STRUCTURE FOR SEMICONDUCTOR DEVICE

CYCLIC LOW TEMPERATURE FILM GROWTH PROCESSES

INTEGRATED ASSEMBLIES HAVING VERTICALLY-SPACED CHANNEL MATERIAL SEG...

PLUGS FOR INTERCONNECT LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCT...

METAL-INSULATOR-METAL (MIM) CAPACITORS WITH IMPROVED RELIABILITY

METHODS OF FORMING SILICON NITRIDE FILMS

THIN FILM TRANSISTOR INCLUDING A HYDROGEN-BLOCKING DIELECTRIC BARRI...

FILM-FORMING METHOD AND FILM-FORMING APPARATUS

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

METHODS FOR WET ATOMIC LAYER ETCHING OF MOLYBDENUM

SEMICONDUCTOR STRUCTURE

METHODS FOR FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND RELATED SE...

NITROGEN-BASED OXYGEN-FREE DIPOLES, RELATED DEVICES, RELATED SYSTEM...

METHODS OF IMPROVING METAL OXIDE DEPOSITION WITH NITROGEN OXIDE AND...

MULTIPLE-CHAMBER REACTOR FOR SELECTIVE DEPOSITION OF SILICON NITRID...

SILICON NITRIDE DEPOSITION

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FA...

SEMICONDUCTOR PROCESSING SYSTEM, A SEMICONDUCTOR PRECURSOR STORAGE...