the means being an applied insulating layer

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H01L29/7843

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7843the means being an applied insulating layer

Industries

Patents Grantslast 30 patents

Information Patent Grant
Fin end plug structures for advanced integrated circuit structure f...
- Patent number 11,961,838
- Issue date Apr 16, 2024
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal silicide structures for advanced integrated circuit stru...
- Patent number 11,961,767
- Issue date Apr 16, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to induce strain in FINFET channels from an adjacent region
- Patent number 11,948,943
- Issue date Apr 2, 2024
- Bell Semiconductor, LLC
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with bonding
- Patent number 11,923,230
- Issue date Mar 5, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Grant
3D semiconductor device and structure with memory
- Patent number 11,901,210
- Issue date Feb 13, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench plug hardmask for advanced integrated circuit structure fabr...
- Patent number 11,887,838
- Issue date Jan 30, 2024
- Intel Corporation
- Anthony St. Amour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin patterning for advanced integrated circuit structure fabrication
- Patent number 11,881,520
- Issue date Jan 23, 2024
- Intel Corporation
- Curtis Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with single-crystal layers
- Patent number 11,876,011
- Issue date Jan 16, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for producing a 3D semiconductor device and structure with m...
- Patent number 11,862,503
- Issue date Jan 2, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for producing a 3D semiconductor device and structure with...
- Patent number 11,854,857
- Issue date Dec 26, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure and method with reduced fin buckling
- Patent number 11,855,207
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Jen Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component and manufacturing method thereof
- Patent number 11,848,380
- Issue date Dec 19, 2023
- Sony Group Corporation
- Koichi Amari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement and method of manufacture
- Patent number 11,843,050
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Continuous gate and fin spacer for advanced integrated circuit stru...
- Patent number 11,837,456
- Issue date Dec 5, 2023
- Intel Corporation
- Heidi M. Meyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned structure for semiconductor devices
- Patent number 11,837,504
- Issue date Dec 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with metal gate stacks
- Patent number 11,830,926
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Hsuan Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with bonding
- Patent number 11,830,757
- Issue date Nov 28, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming semiconductor structure with high aspect ratio
- Patent number 11,823,960
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Pin Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 11,810,950
- Issue date Nov 7, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Huan Yun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with different liners for PFET and NFET and method of...
- Patent number 11,810,827
- Issue date Nov 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Lung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for producing a 3D semiconductor device and structure with...
- Patent number 11,804,396
- Issue date Oct 31, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate cut and fin trim isolation for advanced integrated circuit str...
- Patent number 11,799,015
- Issue date Oct 24, 2023
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relating to SOI wafers and devices with buried stressors
- Patent number 11,791,411
- Issue date Oct 17, 2023
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with bonding
- Patent number 11,784,082
- Issue date Oct 10, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with single-crystal layers
- Patent number 11,735,462
- Issue date Aug 22, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Grant
Power semiconductor device having a strain-inducing material embedd...
- Patent number 11,728,427
- Issue date Aug 15, 2023
- Infineon Technologies Austria AG
- Stefan Karner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistors with strained channel regions
- Patent number 11,705,517
- Issue date Jul 18, 2023
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR PRODUCING A 3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH...
- Publication number 20240145289
- Publication date May 2, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY
- Publication number 20240128116
- Publication date Apr 18, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH SINGLE-CRYSTAL LAYERS
- Publication number 20240112942
- Publication date Apr 4, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...
- Publication number 20240105520
- Publication date Mar 28, 2024
- Intel Corporation
- Anthony ST. AMOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE AND FORMATION METHOD THEREOF
- Publication number 20240105846
- Publication date Mar 28, 2024
- Invention And Collaboration Laboratory Pte. Ltd.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY
- Publication number 20240105490
- Publication date Mar 28, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE
- Publication number 20240105847
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Pei-Yu WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING
- Publication number 20240097033
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Jen Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREOF
- Publication number 20240088290
- Publication date Mar 14, 2024
- SONY GROUP CORPORATION
- Koichi Amari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDE TRANSISTOR DEVICE AND METHOD
- Publication number 20240064987
- Publication date Feb 22, 2024
- Micron Technology, Inc.
- Toshihiko Miyashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH BONDING
- Publication number 20240055291
- Publication date Feb 15, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE WITH HIGH ASPECT RATIO
- Publication number 20240047276
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Pin CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20240047556
- Publication date Feb 8, 2024
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTINUOUS GATE AND FIN SPACER FOR ADVANCED INTEGRATED CIRCUIT STRU...
- Publication number 20240038578
- Publication date Feb 1, 2024
- Intel Corporation
- Heidi M. MEYER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI WAFERS AND DEVICES WITH BURIED STRESSORS
- Publication number 20240006532
- Publication date Jan 4, 2024
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...
- Publication number 20240006175
- Publication date Jan 4, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Kang YOU
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR PRODUCING A 3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH...
- Publication number 20230420283
- Publication date Dec 28, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20230420545
- Publication date Dec 28, 2023
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH BONDING
- Publication number 20230386886
- Publication date Nov 30, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
Self-Aligned Structure For Semiconductor Devices
- Publication number 20230386933
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH AT LEAST TWO SINGLE-CR...
- Publication number 20230352333
- Publication date Nov 2, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH SINGLE-CRYSTAL LAYERS
- Publication number 20230343632
- Publication date Oct 26, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
POWER SEMICONDUCTOR DEVICE HAVING AN ELECTRODE WITH AN EMBEDDED MAT...
- Publication number 20230343871
- Publication date Oct 26, 2023
- Infineon Technologies Austria AG
- Stefan Karner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT METAL GATES TO ENHANCE TRANSISTOR STRAIN
- Publication number 20230307455
- Publication date Sep 28, 2023
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PRODUCING A 3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH...
- Publication number 20230307283
- Publication date Sep 28, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND DEVICE FOR BOOSTING PERFORMANCE OF FINFETS VIA STRAINED...
- Publication number 20230299200
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Chieh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230268406
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Che CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...
- Publication number 20230261089
- Publication date Aug 17, 2023
- Intel Corporation
- Subhash M. JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230246032
- Publication date Aug 3, 2023
- SONY GROUP CORPORATION
- Shinya Yamakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH GATE PLUGS TO INDUCE COMPRESSIVE CHANNEL S...
- Publication number 20230207696
- Publication date Jun 29, 2023
- Mohammad HASAN
- H01 - BASIC ELECTRIC ELEMENTS

the means being an applied insulating layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Fin end plug structures for advanced integrated circuit structure f...

Dual metal silicide structures for advanced integrated circuit stru...

Dual metal gate structure having portions of metal gate layers in c...

Heterogeneous metal line compositions for advanced integrated circu...

Method to induce strain in FINFET channels from an adjacent region

Trench contact structures for advanced integrated circuit structure...

3D semiconductor device and structure with bonding

3D semiconductor device and structure with memory

Trench plug hardmask for advanced integrated circuit structure fabr...

Fin patterning for advanced integrated circuit structure fabrication

3D semiconductor device and structure with single-crystal layers

Method for producing a 3D semiconductor device and structure with m...

Methods for producing a 3D semiconductor device and structure with...

FinFET structure and method with reduced fin buckling

Semiconductor component and manufacturing method thereof

Semiconductor arrangement and method of manufacture

Continuous gate and fin spacer for advanced integrated circuit stru...

Self-aligned structure for semiconductor devices

Semiconductor device structure with metal gate stacks

3D semiconductor device and structure with bonding

Method for forming semiconductor structure with high aspect ratio

Semiconductor structure

FinFET device with different liners for PFET and NFET and method of...

Methods for producing a 3D semiconductor device and structure with...

Gate cut and fin trim isolation for advanced integrated circuit str...

Relating to SOI wafers and devices with buried stressors

3D semiconductor device and structure with bonding

3D semiconductor device and structure with single-crystal layers

Power semiconductor device having a strain-inducing material embedd...

Nanosheet transistors with strained channel regions

Patents Applicationslast 30 patents

METHODS FOR PRODUCING A 3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH SINGLE-CRYSTAL LAYERS

TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...

TRANSISTOR STRUCTURE AND FORMATION METHOD THEREOF

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY

SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE

FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING

SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREOF

SILICIDE TRANSISTOR DEVICE AND METHOD

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH BONDING

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE WITH HIGH ASPECT RATIO

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

CONTINUOUS GATE AND FIN SPACER FOR ADVANCED INTEGRATED CIRCUIT STRU...

SOI WAFERS AND DEVICES WITH BURIED STRESSORS

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...

METHODS FOR PRODUCING A 3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH...

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH BONDING

Self-Aligned Structure For Semiconductor Devices

3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH AT LEAST TWO SINGLE-CR...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH SINGLE-CRYSTAL LAYERS

POWER SEMICONDUCTOR DEVICE HAVING AN ELECTRODE WITH AN EMBEDDED MAT...

REPLACEMENT METAL GATES TO ENHANCE TRANSISTOR STRAIN

METHODS FOR PRODUCING A 3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH...

METHOD AND DEVICE FOR BOOSTING PERFORMANCE OF FINFETS VIA STRAINED...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

INTEGRATED CIRCUITS WITH GATE PLUGS TO INDUCE COMPRESSIVE CHANNEL S...