the means being located in the lateral device isolation region

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/7846the means being located in the lateral device isolation region

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Gate line plug structures for advanced integrated circuit structure...
- Patent number 12,199,167
- Issue date Jan 14, 2025
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plugs for interconnect lines for advanced integrated circuit struct...
- Patent number 12,199,168
- Issue date Jan 14, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,183,734
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Sang Min Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 12,142,667
- Issue date Nov 12, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut and fin trim isolation for advanced integrated circuit str...
- Patent number 12,057,492
- Issue date Aug 6, 2024
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation wall stressor structures to improve channel stress and th...
- Patent number 12,033,896
- Issue date Jul 9, 2024
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 12,021,082
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming isolation regions by depositing and oxidizing a...
- Patent number 11,996,317
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Po-Kai Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor using elastic edge relaxation of a stressor...
- Patent number 11,978,800
- Issue date May 7, 2024
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin end plug structures for advanced integrated circuit structure f...
- Patent number 11,961,838
- Issue date Apr 16, 2024
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal silicide structures for advanced integrated circuit stru...
- Patent number 11,961,767
- Issue date Apr 16, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,955,550
- Issue date Apr 9, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain epitaxial layer profile
- Patent number 11,942,547
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transport field-effect transistor with ring-shaped wrap-ar...
- Patent number 11,908,937
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and methods of fabricating such devices
- Patent number 11,894,376
- Issue date Feb 6, 2024
- Samsung Electronics Co., Ltd.
- Dae-Won Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench plug hardmask for advanced integrated circuit structure fabr...
- Patent number 11,887,838
- Issue date Jan 30, 2024
- Intel Corporation
- Anthony St. Amour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin patterning for advanced integrated circuit structure fabrication
- Patent number 11,881,520
- Issue date Jan 23, 2024
- Intel Corporation
- Curtis Ward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Continuous gate and fin spacer for advanced integrated circuit stru...
- Patent number 11,837,456
- Issue date Dec 5, 2023
- Intel Corporation
- Heidi M. Meyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices with strained isolation features
- Patent number 11,837,662
- Issue date Dec 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor structure with high aspect ratio
- Patent number 11,823,960
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Pin Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with different liners for PFET and NFET and method of...
- Patent number 11,810,827
- Issue date Nov 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Lung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including resistor structures
- Patent number 11,804,516
- Issue date Oct 31, 2023
- Samsung Electronics Co., Ltd.
- Tae-yeol Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut and fin trim isolation for advanced integrated circuit str...
- Patent number 11,799,015
- Issue date Oct 24, 2023
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relating to SOI wafers and devices with buried stressors
- Patent number 11,791,411
- Issue date Oct 17, 2023
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,784,186
- Issue date Oct 10, 2023
- Samsung Electronics Co., Ltd.
- Sang Min Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide plug for strained transistors
- Patent number 11,757,037
- Issue date Sep 12, 2023
- Intel Corporation
- Karthik Jambunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,742,411
- Issue date Aug 29, 2023
- Samsung Electronics Co., Ltd.
- Chang-woo Noh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cut Metal Gate Refill With Buffer Layer
- Publication number 20250014946
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fan Hsuan Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20240332399
- Publication date Oct 3, 2024
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ISOLATION REGION INCLUDING COMBINATION...
- Publication number 20240313113
- Publication date Sep 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anton V. Tokranov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOID-FREE STRESS INCORPORATION IN SEMICONDUCTOR DEVICES
- Publication number 20240290883
- Publication date Aug 29, 2024
- Applied Materials, Inc.
- Sai Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS INCORPORATION IN SEMICONDUCTOR DEVICES
- Publication number 20240290884
- Publication date Aug 29, 2024
- Applied Materials, Inc.
- El Mehdi Bazizi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED MOBILITY IN SEMICONDUCTOR DEVICES
- Publication number 20240290885
- Publication date Aug 29, 2024
- Applied Materials, Inc.
- Sai Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Depositing and Oxidizing Silicon Liner for Forming Isolation Regions
- Publication number 20240274465
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Kai Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR...
- Publication number 20240250172
- Publication date Jul 25, 2024
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF
- Publication number 20240213368
- Publication date Jun 27, 2024
- HON HAI PRECISION INDUSTRY CO., LTD.
- Yun-Hung SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN EPITAXIAL LAYER PROFILE
- Publication number 20240194784
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gulbagh SINGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTUR...
- Publication number 20240186403
- Publication date Jun 6, 2024
- Intel Corporation
- Jeffrey S. LEIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRU...
- Publication number 20240178071
- Publication date May 30, 2024
- Intel Corporation
- Jeffrey S. LEIB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...
- Publication number 20240162332
- Publication date May 16, 2024
- Intel Corporation
- Subhash M. JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN END PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE F...
- Publication number 20240153947
- Publication date May 9, 2024
- Intel Corporation
- Byron HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240145594
- Publication date May 2, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...
- Publication number 20240105520
- Publication date Mar 28, 2024
- Intel Corporation
- Anthony ST. AMOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR FIELD-EFFECT TRANSISTORS INCLUDING STRES...
- Publication number 20240105503
- Publication date Mar 28, 2024
- GLOBALFOUNDRIES U.S. Inc.
- SHESH MANI PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN TRIM PLUG STRUCTURES WITH METAL FOR IMPARTING CHANNEL STRESS
- Publication number 20240088292
- Publication date Mar 14, 2024
- Intel Corporation
- Tao CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE WITH HIGH ASPECT RATIO
- Publication number 20240047276
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Pin CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20240047556
- Publication date Feb 8, 2024
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTINUOUS GATE AND FIN SPACER FOR ADVANCED INTEGRATED CIRCUIT STRU...
- Publication number 20240038578
- Publication date Feb 1, 2024
- Intel Corporation
- Heidi M. MEYER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI WAFERS AND DEVICES WITH BURIED STRESSORS
- Publication number 20240006532
- Publication date Jan 4, 2024
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20230420545
- Publication date Dec 28, 2023
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STATE FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20230411533
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Karthik Yogendra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES WITH STRAINED ISOLATION FEATURES
- Publication number 20230387300
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230378174
- Publication date Nov 23, 2023
- Samsung Electronics Co., Ltd.
- Sang Min YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTED LEADS FOR PACKAGED ISOLATION DEVICES
- Publication number 20230299201
- Publication date Sep 21, 2023
- TEXAS INSTRUMENTS INCORPORATED
- JOHN PAUL TELLKAMP
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...
- Publication number 20230261089
- Publication date Aug 17, 2023
- Intel Corporation
- Subhash M. JOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TRENCH ISOLATION STRUCTURES IN A TRANSITI...
- Publication number 20230238459
- Publication date Jul 27, 2023
- Infineon Technologies Austria AG
- Lars Müller-Meskamp
- H01 - BASIC ELECTRIC ELEMENTS

the means being located in the lateral device isolation region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Gate line plug structures for advanced integrated circuit structure...

Plugs for interconnect lines for advanced integrated circuit struct...

Semiconductor device and method for fabricating the same

Contact over active gate structures for advanced integrated circuit...

Gate cut and fin trim isolation for advanced integrated circuit str...

Isolation wall stressor structures to improve channel stress and th...

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Methods for forming isolation regions by depositing and oxidizing a...

Strained semiconductor using elastic edge relaxation of a stressor...

Fin end plug structures for advanced integrated circuit structure f...

Dual metal silicide structures for advanced integrated circuit stru...

Dual metal gate structure having portions of metal gate layers in c...

Semiconductor device

Heterogeneous metal line compositions for advanced integrated circu...

Trench contact structures for advanced integrated circuit structure...

Source/drain epitaxial layer profile

Vertical transport field-effect transistor with ring-shaped wrap-ar...

Integrated circuit devices and methods of fabricating such devices

Trench plug hardmask for advanced integrated circuit structure fabr...

Fin patterning for advanced integrated circuit structure fabrication

Continuous gate and fin spacer for advanced integrated circuit stru...

Devices with strained isolation features

Method for forming semiconductor structure with high aspect ratio

FinFET device with different liners for PFET and NFET and method of...

Semiconductor devices including resistor structures

Gate cut and fin trim isolation for advanced integrated circuit str...

Relating to SOI wafers and devices with buried stressors

Semiconductor device and method for fabricating the same

Epitaxial oxide plug for strained transistors

Semiconductor devices

Patents Applicationslast 30 patents

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

Cut Metal Gate Refill With Buffer Layer

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...

SEMICONDUCTOR STRUCTURE WITH ISOLATION REGION INCLUDING COMBINATION...

VOID-FREE STRESS INCORPORATION IN SEMICONDUCTOR DEVICES

STRESS INCORPORATION IN SEMICONDUCTOR DEVICES

ENHANCED MOBILITY IN SEMICONDUCTOR DEVICES

Depositing and Oxidizing Silicon Liner for Forming Isolation Regions

STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR...

SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF

SOURCE/DRAIN EPITAXIAL LAYER PROFILE

DUAL METAL GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTUR...

DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRU...

TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...

FIN END PLUG STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE F...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...

SEMICONDUCTOR-ON-INSULATOR FIELD-EFFECT TRANSISTORS INCLUDING STRES...

FIN TRIM PLUG STRUCTURES WITH METAL FOR IMPARTING CHANNEL STRESS

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE WITH HIGH ASPECT RATIO

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

CONTINUOUS GATE AND FIN SPACER FOR ADVANCED INTEGRATED CIRCUIT STRU...

SOI WAFERS AND DEVICES WITH BURIED STRESSORS

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...

MULTI-STATE FIELD EFFECT TRANSISTOR DEVICE

DEVICES WITH STRAINED ISOLATION FEATURES

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

INVERTED LEADS FOR PACKAGED ISOLATION DEVICES

TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE...

SEMICONDUCTOR DEVICE WITH TRENCH ISOLATION STRUCTURES IN A TRANSITI...