the species being metal cations

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

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H01L45/085the species being metal cations

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Cross-point memory array and related fabrication techniques
- Patent number 11,706,934
- Issue date Jul 18, 2023
- Micron Technology, Inc.
- Hernan A. Castro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnesium ion based synaptic device
- Patent number 11,690,304
- Issue date Jun 27, 2023
- International Business Machines Corporation
- Douglas M. Bishop
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Cross-point memory array and related fabrication techniques
- Patent number 11,653,505
- Issue date May 16, 2023
- Micron Technology, Inc.
- Hernan A. Castro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory structure with positioned doping
- Patent number 11,653,580
- Issue date May 16, 2023
- Hefei Reliance Memory Limited
- Zhichao Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random-access memory cell and manufacturing method thereof
- Patent number 11,637,238
- Issue date Apr 25, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling voltage resistance through metal-oxide device
- Patent number 11,615,843
- Issue date Mar 28, 2023
- International Business Machines Corporation
- Bert Jan Offrein
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Dual oxide analog switch for neuromorphic switching
- Patent number 11,616,195
- Issue date Mar 28, 2023
- Applied Materials, Inc.
- Deepak Kamalanathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,611,039
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsai-Hao Hung
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming RRAM with a barrier layer
- Patent number 11,611,038
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Chen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion barrier layer in programmable metallization cell
- Patent number 11,594,678
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Albert Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure
- Patent number 11,588,107
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Densely charged catenanes
- Patent number 11,566,014
- Issue date Jan 31, 2023
- Northwestern University
- Minh T. Nguyen
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Two-terminal non-volatile memory cell for decoupled read and write...
- Patent number 11,568,927
- Issue date Jan 31, 2023
- International Business Machines Corporation
- John Rozen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having variable resistance elements pro...
- Patent number 11,552,129
- Issue date Jan 10, 2023
- Kioxia Corporation
- Takuya Konno
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming a memory cell comprising a metal chalcogenide ma...
- Patent number 11,538,991
- Issue date Dec 27, 2022
- Micron Technology, Inc.
- Eugene P. Marsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional selector device for memory applications
- Patent number 11,538,857
- Issue date Dec 27, 2022
- Avalanche Technology, Inc.
- Zhiqiang Wei
- G11 - INFORMATION STORAGE
Information Patent Grant
Buffer layer in memory cell to prevent metal redeposition
- Patent number 11,532,785
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor integrated circuit
- Patent number 11,502,129
- Issue date Nov 15, 2022
- Research & Business Foundation Sungkyunkwan University
- Sungjoo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device with three-dimensional cross-...
- Patent number 11,495,292
- Issue date Nov 8, 2022
- Kioxia Corporation
- Kikuko Sugimae
- G11 - INFORMATION STORAGE
Information Patent Grant
Neuromorphic devices using layers of ion reservoirs and ion conduct...
- Patent number 11,488,001
- Issue date Nov 1, 2022
- International Business Machines Corporation
- Ning Li
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Nonvolatile memory device having a resistance change layer and a pl...
- Patent number 11,482,667
- Issue date Oct 25, 2022
- SK Hynix Inc.
- Jae Hyun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrochemically tunable, solid-state metamaterial-based devices
- Patent number 11,476,555
- Issue date Oct 18, 2022
- HRL Laboratories, LLC
- Christopher S. Roper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and device including memristor material
- Patent number 11,469,373
- Issue date Oct 11, 2022
- Rockwell Collins, Inc.
- Kyle B. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS-compatible protonic resistive devices
- Patent number 11,462,683
- Issue date Oct 4, 2022
- Massachusetts Institute of Technology
- Oguzhan Murat Onen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switch device, storage apparatus, and memory system incorporating b...
- Patent number 11,462,685
- Issue date Oct 4, 2022
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Hiroaki Sei
- G11 - INFORMATION STORAGE
Information Patent Grant
Thermally sensitive ionic redox transistor
- Patent number 11,450,802
- Issue date Sep 20, 2022
- National Technology & Engineering Solutions of Sandia, LLC
- Yiyang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device and method of manufacturing the same and el...
- Patent number 11,444,242
- Issue date Sep 13, 2022
- Samsung Electronics Co., Ltd.
- Kwanghee Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices and methods of forming memory devices
- Patent number 11,444,125
- Issue date Sep 13, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Desmond Jia Jun Loy
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive switching memory device based on multi-inputs
- Patent number 11,437,570
- Issue date Sep 6, 2022
- Yonsei University, University—Industry Foundation (UIF)
- Ki Tae Nam
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE AND METHOD FOR OPERATING THE SAME
- Publication number 20230253039
- Publication date Aug 10, 2023
- Macronix International Co., Ltd.
- Yu-Yu LIN
- G11 - INFORMATION STORAGE
Information Patent Application
REDUNDANT BOTTOM PAD AND SACRIFICIAL VIA CONTACT FOR PROCESS INDUCE...
- Publication number 20230210025
- Publication date Jun 29, 2023
- International Business Machines Corporation
- Youngseok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-TERMINAL SYNAPTIC DEVICE
- Publication number 20230172080
- Publication date Jun 1, 2023
- Hyundai Motor Company
- Su-Jung Noh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER TO MITIGATE DIRECT-SHORTAGE LEAKAGE IN CONDUCTIVE...
- Publication number 20230134560
- Publication date May 4, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Wen Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION
- Publication number 20230100433
- Publication date Mar 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CBRAM BOTTOM ELECTRODE STRUCTURES
- Publication number 20230086109
- Publication date Mar 23, 2023
- Dialog Semiconductor US Inc.
- John R. Jameson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING CHANNEL LAYER INCLUDING VARIABLE RESIST...
- Publication number 20230082400
- Publication date Mar 16, 2023
- SK HYNIX INC.
- Won Tae KOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE RESISTANCE ELEMENT, STORAGE DEVICE, AND NEURAL NETWORK APP...
- Publication number 20230079071
- Publication date Mar 16, 2023
- Kabushiki Kaisha Toshiba
- Takao MARUKAME
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CONDUCTIVE-BRIDGING SEMICONDUCTOR MEMORY DEVICE FORMED BY SELECTIVE...
- Publication number 20230068851
- Publication date Mar 2, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-...
- Publication number 20230024213
- Publication date Jan 26, 2023
- KIOXIA Corporation
- Kikuko SUGIMAE
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR OPERATING SAME
- Publication number 20230028701
- Publication date Jan 26, 2023
- Hefei Reliance Memory Limited
- Zezhi CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-OXIDE INFILTRATED ORGANIC-INORGANIC HYBRID RESISTIVE RANDOM-A...
- Publication number 20230006133
- Publication date Jan 5, 2023
- Brookhaven Science Associates, LLC
- Chang-Yong Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC SYNAPSE DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220406998
- Publication date Dec 22, 2022
- Agency for Science, Technology and Research
- Wen Dong Song
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY (RRAM) CELLS AND METHODS OF CONSTRUC...
- Publication number 20220393105
- Publication date Dec 8, 2022
- MICROCHIP TECHNOLOGY INCORPORATED
- Yaojian Leng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20220376175
- Publication date Nov 24, 2022
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Huei-Tsz WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER LAYER IN PROGRAMMABLE METALLIZATION CELL
- Publication number 20220367801
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Albert Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bidirectional Selector Device for Memory Applications
- Publication number 20220352255
- Publication date Nov 3, 2022
- Avalanche Technology, Inc.
- Zhiqiang Wei
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING ACTIVE LAYER WITH VARIABLE RESISTANCE
- Publication number 20220352461
- Publication date Nov 3, 2022
- SK hynix Inc.
- Won Tae KOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220336531
- Publication date Oct 20, 2022
- Kioxia Corporation
- Takuya KONNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL NON-VOLATILE MEMORY CELL FOR DECOUPLED READ AND WRITE...
- Publication number 20220319588
- Publication date Oct 6, 2022
- International Business Machines Corporation
- John Rozen
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20220310910
- Publication date Sep 29, 2022
- UNITED MICROELECTRONICS CORP.
- Chia-Ching Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE TERMINAL NEUROMORPHIC SYNAPTIC DEVICE AND METHOD FOR MANUFACT...
- Publication number 20220285615
- Publication date Sep 8, 2022
- Kyungpook National University Industry-Academic Cooperation Foundation
- Jiyong Woo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TRENCH FORMATION SCHEME FOR PROGRAMMABLE METALLIZATION CELL TO PREV...
- Publication number 20220278170
- Publication date Sep 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Ting Sung
- G11 - INFORMATION STORAGE
Information Patent Application
A Resistive Memory Device Structure Based on Stacked Layers Of Nano...
- Publication number 20220278276
- Publication date Sep 1, 2022
- Agency for Science, Technology and Research
- Henry MEDINA SILVA
- C01 - INORGANIC CHEMISTRY
Information Patent Application
ELECTRONIC DEVICE INCLUDING RESISTANCE CHANGE CHANNEL LAYER
- Publication number 20220271221
- Publication date Aug 25, 2022
- SK hynix Inc.
- Won Tae KOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20220263024
- Publication date Aug 18, 2022
- KIOXIA Corporation
- Kotaro NODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE INTERPOSERS FOR ELECTRICALLY CONNECTING INTEGRATED CIR...
- Publication number 20220262433
- Publication date Aug 18, 2022
- Michael Kozicki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ReRAM Memory Array
- Publication number 20220262434
- Publication date Aug 18, 2022
- Microchip Technology Inc.
- Victor Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY CELL AND MANUFACTURING METHOD THEREOF
- Publication number 20220254996
- Publication date Aug 11, 2022
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE BRIDGE MEMORY DEVICE, MANUFACTURING METHOD THEREOF, AND...
- Publication number 20220254998
- Publication date Aug 11, 2022
- NATIONAL UNIVERSITY CORPORATION TOTTORI UNIVERSITY
- Toshiyuki ITOH
- H01 - BASIC ELECTRIC ELEMENTS

the species being metal cations

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Cross-point memory array and related fabrication techniques

Magnesium ion based synaptic device

Two-terminal reversibly switchable memory device

Cross-point memory array and related fabrication techniques

Non-volatile memory structure with positioned doping

Resistive random-access memory cell and manufacturing method thereof

Controlling voltage resistance through metal-oxide device

Dual oxide analog switch for neuromorphic switching

Resistive random access memory device

Method for forming RRAM with a barrier layer

Diffusion barrier layer in programmable metallization cell

Integrated circuit structure

Densely charged catenanes

Two-terminal non-volatile memory cell for decoupled read and write...

Semiconductor memory device having variable resistance elements pro...

Methods of forming a memory cell comprising a metal chalcogenide ma...

Bidirectional selector device for memory applications

Buffer layer in memory cell to prevent metal redeposition

Three-dimensional semiconductor integrated circuit

Resistive random access memory device with three-dimensional cross-...

Neuromorphic devices using layers of ion reservoirs and ion conduct...

Nonvolatile memory device having a resistance change layer and a pl...

Electrochemically tunable, solid-state metamaterial-based devices

System and device including memristor material

CMOS-compatible protonic resistive devices

Switch device, storage apparatus, and memory system incorporating b...

Thermally sensitive ionic redox transistor

Resistive memory device and method of manufacturing the same and el...

Memory devices and methods of forming memory devices

Resistive switching memory device based on multi-inputs

Patents Applicationslast 30 patents

MEMORY DEVICE AND METHOD FOR OPERATING THE SAME

REDUNDANT BOTTOM PAD AND SACRIFICIAL VIA CONTACT FOR PROCESS INDUCE...

THREE-TERMINAL SYNAPTIC DEVICE

DIFFUSION BARRIER TO MITIGATE DIRECT-SHORTAGE LEAKAGE IN CONDUCTIVE...

BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION

CBRAM BOTTOM ELECTRODE STRUCTURES

ELECTRONIC DEVICE INCLUDING CHANNEL LAYER INCLUDING VARIABLE RESIST...

VARIABLE RESISTANCE ELEMENT, STORAGE DEVICE, AND NEURAL NETWORK APP...

CONDUCTIVE-BRIDGING SEMICONDUCTOR MEMORY DEVICE FORMED BY SELECTIVE...

RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-...

RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR OPERATING SAME

METAL-OXIDE INFILTRATED ORGANIC-INORGANIC HYBRID RESISTIVE RANDOM-A...

ELECTRONIC SYNAPSE DEVICE AND METHOD OF FORMING THE SAME

RESISTIVE RANDOM ACCESS MEMORY (RRAM) CELLS AND METHODS OF CONSTRUC...

NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE

DIFFUSION BARRIER LAYER IN PROGRAMMABLE METALLIZATION CELL

Bidirectional Selector Device for Memory Applications

SEMICONDUCTOR DEVICE INCLUDING ACTIVE LAYER WITH VARIABLE RESISTANCE

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

TWO-TERMINAL NON-VOLATILE MEMORY CELL FOR DECOUPLED READ AND WRITE...

SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF

THREE TERMINAL NEUROMORPHIC SYNAPTIC DEVICE AND METHOD FOR MANUFACT...

TRENCH FORMATION SCHEME FOR PROGRAMMABLE METALLIZATION CELL TO PREV...

A Resistive Memory Device Structure Based on Stacked Layers Of Nano...

ELECTRONIC DEVICE INCLUDING RESISTANCE CHANGE CHANNEL LAYER

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

PROGRAMMABLE INTERPOSERS FOR ELECTRICALLY CONNECTING INTEGRATED CIR...

ReRAM Memory Array

RESISTIVE RANDOM-ACCESS MEMORY CELL AND MANUFACTURING METHOD THEREOF

CONDUCTIVE BRIDGE MEMORY DEVICE, MANUFACTURING METHOD THEREOF, AND...