the structure comprising a MOS gate and at least one non-MOS gate

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H01L29/7832

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/7832the structure comprising a MOS gate and at least one non-MOS gate

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Patents Grantslast 30 patents

Information Patent Grant
Transistor structure
- Patent number 12,087,635
- Issue date Sep 10, 2024
- United Microelectronics Corp.
- Shih-Yin Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DEPFET transistor and method of manufacturing a DEPFET transistor
- Patent number 12,046,674
- Issue date Jul 23, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften E.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DEPFET transistor and method of manufacturing a DEPFET transistor
- Patent number 12,015,082
- Issue date Jun 18, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften E.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 11,978,772
- Issue date May 7, 2024
- Renesas Electronics Corporation
- Yoshiyuki Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a lateral super junction field effe...
- Patent number 11,837,658
- Issue date Dec 5, 2023
- K.Eklund Innovation
- Klas-Håkan Eklund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure
- Patent number 11,721,587
- Issue date Aug 8, 2023
- United Microelectronics Corp.
- Shih-Yin Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-plate trench FET and associated method for manufacturing
- Patent number 11,688,774
- Issue date Jun 27, 2023
- Monolithic Power Systems, Inc.
- Ignacio Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current reference
- Patent number 11,616,141
- Issue date Mar 28, 2023
- Texas Instruments Incorporated
- Sundeep Lakshmana Javvaji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide planar MOSFET with wave-shaped channel regions
- Patent number 11,605,713
- Issue date Mar 14, 2023
- SEMIQ INCORPORATED
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded trench devices
- Patent number 11,538,911
- Issue date Dec 27, 2022
- iPower Semiconductor
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-plate trench FET and associated method for manufacturing
- Patent number 11,527,626
- Issue date Dec 13, 2022
- Monolithic Power Systems, Inc.
- Ignacio Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS compatible BioFET
- Patent number 11,486,854
- Issue date Nov 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Alexander Kalnitsky
- C12 - BIOCHEMISTRY BEER SPIRITS WINE VINEGAR MICROBIOLOGY ENZYMOLOGY MUTATION...
Information Patent Grant
Semiconductor device including an oxide semiconductor
- Patent number 11,424,368
- Issue date Aug 23, 2022
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-noise gate-all-around junction field effect transistor
- Patent number 11,271,108
- Issue date Mar 8, 2022
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,233,147
- Issue date Jan 25, 2022
- Denso Corporation
- Masato Noborio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated power semiconductor device and method for manufacturing...
- Patent number 11,222,890
- Issue date Jan 11, 2022
- University of Electronic Science and Technology of China
- Ming Qiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a silicon carbide semiconductor device with...
- Patent number 11,195,946
- Issue date Dec 7, 2021
- Infineon Technologies AG
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure
- Patent number 11,088,027
- Issue date Aug 10, 2021
- United Microelectronics Corp.
- Shih-Yin Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for fabricating planar charge balanced (CB) metal-oxide-...
- Patent number 11,069,772
- Issue date Jul 20, 2021
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded JFETs for high voltage applications
- Patent number 11,069,805
- Issue date Jul 20, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jen-Hao Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of making thereof
- Patent number 11,063,115
- Issue date Jul 13, 2021
- General Electric Company
- Peter Almern Losee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device with trench gate structure and...
- Patent number 10,964,808
- Issue date Mar 30, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide planar MOSFET with wave-shaped channel regions
- Patent number 10,950,695
- Issue date Mar 16, 2021
- SEMIQ INCORPORATED
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with depletion-mode and enhancement mode-devices
- Patent number 10,868,165
- Issue date Dec 15, 2020
- NAVITAS SEMICONDUCTOR LIMITED
- Pil Sung Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure
- Patent number 10,796,964
- Issue date Oct 6, 2020
- United Microelectronics Corp.
- Shih-Yin Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high voltage field effect transistor and...
- Patent number 10,784,372
- Issue date Sep 22, 2020
- MagnaChip Semiconductor, Ltd.
- Young Bae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation-tolerant unit MOSFET hardened against single event effect...
- Patent number 10,756,028
- Issue date Aug 25, 2020
- Korea Advanced Institute of Science and Technology
- Hee Chul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an oxide semiconductor
- Patent number 10,741,695
- Issue date Aug 11, 2020
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method manufacturing the same
- Patent number 10,727,302
- Issue date Jul 28, 2020
- Hyundai Motor Company
- Nack Yong Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junctionless/accumulation mode transistor with dynamic control
- Patent number 10,665,667
- Issue date May 26, 2020
- GLOBALFOUNDRIES Inc.
- Anupam Dutta
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240379844
- Publication date Nov 14, 2024
- HON HAI PRECISION INDUSTRY CO., LTD.
- Chia-Lung HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240379843
- Publication date Nov 14, 2024
- HON HAI PRECISION INDUSTRY CO., LTD.
- Yi-Kai HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240363692
- Publication date Oct 31, 2024
- FUJI ELECTRIC CO., LTD.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MOSFET WITH HIGH SHORT CIRCUIT WITHSTAND TIME CAPABILITY
- Publication number 20240339494
- Publication date Oct 10, 2024
- MaxPower Semiconductor, Inc.
- Mohamed Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPFET TRANSISTOR
- Publication number 20240322038
- Publication date Sep 26, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240297223
- Publication date Sep 5, 2024
- Fuji Electric Co., Ltd.
- Shinichiro MATSUNAGA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, POWER CONVERSIO...
- Publication number 20240290857
- Publication date Aug 29, 2024
- Huawei Digital Power Technologies Co., Ltd.
- Kimimori HAMADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SWITCHING DEVICE
- Publication number 20240274706
- Publication date Aug 15, 2024
- GE AVIATION SYSTEMS LLC
- Collin William Hitchcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH INTEGRATED SOURCE-DRAIN DIODE
- Publication number 20240222504
- Publication date Jul 4, 2024
- Qorvo US, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240162297
- Publication date May 16, 2024
- Hitachi, Ltd
- Takeru SUTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING MOSFET REGION AND DIODE REGION AND M...
- Publication number 20240128260
- Publication date Apr 18, 2024
- DB HiTek Co., Ltd.
- Seung Hyun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) INCLUDI...
- Publication number 20240128323
- Publication date Apr 18, 2024
- THE RESEARCH FOUNDATION FOR THE STATE UNIVERSTIY OF NEW YORK
- Woongje SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE WITH IMPROVED RUGGEDNESS
- Publication number 20240096933
- Publication date Mar 21, 2024
- NEXPERIA B.V.
- Georgio El Zammar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240038851
- Publication date Feb 1, 2024
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CASCODE ARRANGEMENT AND SEMICONDUCTOR MODULE
- Publication number 20240021610
- Publication date Jan 18, 2024
- ROBERT BOSCH GmbH
- Josef Goeppert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A LATERAL SUPER JUNCTION FIELD EFFE...
- Publication number 20230411518
- Publication date Dec 21, 2023
- K.EKLUND INNOVATION
- Klas-Håkan EKLUND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE, INVERTER CIRCUIT USING THE SA...
- Publication number 20230378292
- Publication date Nov 23, 2023
- DENSO CORPORATION
- JUNICHI UEHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon-Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transi...
- Publication number 20230327018
- Publication date Oct 12, 2023
- Hong Kong Applied Science and Technology Research Institute Company Limited
- Shu Kin YAU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE
- Publication number 20230326801
- Publication date Oct 12, 2023
- United Microelectronics Corp.
- Shih-Yin Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230317834
- Publication date Oct 5, 2023
- Japan Display Inc.
- Hajime WATAKABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230268400
- Publication date Aug 24, 2023
- RENESAS ELECTRONICS CORPORATION
- Yoshiyuki KAWASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR HAVING SAME GATE AND SOURCE DOPING, CELL ST...
- Publication number 20230178636
- Publication date Jun 8, 2023
- PN Junction Semiconductor (Hangzhou) Co., Ltd.
- Xing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230141429
- Publication date May 11, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE INSENSITIVE TRANSISTOR CIRCUITS
- Publication number 20230068950
- Publication date Mar 2, 2023
- Intel Corporation
- Dmitri Evgenievich Nikonov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPFET TRANSISTOR AND METHOD OF MANUFACTURING A DEPFET TRANSISTOR
- Publication number 20220278233
- Publication date Sep 1, 2022
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-PLATE TRENCH FET AND ASSOCIATED METHOD FOR MANUFACTURING
- Publication number 20220140092
- Publication date May 5, 2022
- Monolithic Power Systems, Inc.
- Ignacio Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-PLATE TRENCH FET AND ASSOCIATED METHOD FOR MANUFACTURING
- Publication number 20220140093
- Publication date May 5, 2022
- Monolithic Power Systems, Inc.
- Ignacio Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT COMPONENT
- Publication number 20220131005
- Publication date Apr 28, 2022
- STMicroelectronics (Crolles 2) SAS
- Benoit FROMENT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURRENT REFERENCE
- Publication number 20210408281
- Publication date Dec 30, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Sundeep Lakshmana JAVVAJI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE
- Publication number 20210335669
- Publication date Oct 28, 2021
- United Microelectronics Corp.
- Shih-Yin Hsiao
- H01 - BASIC ELECTRIC ELEMENTS

the structure comprising a MOS gate and at least one non-MOS gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Transistor structure

DEPFET transistor and method of manufacturing a DEPFET transistor

DEPFET transistor and method of manufacturing a DEPFET transistor

Method of manufacturing semiconductor device

Semiconductor device comprising a lateral super junction field effe...

Transistor structure

Field-plate trench FET and associated method for manufacturing

Current reference

Silicon carbide planar MOSFET with wave-shaped channel regions

Shielded trench devices

Field-plate trench FET and associated method for manufacturing

CMOS compatible BioFET

Semiconductor device including an oxide semiconductor

Low-noise gate-all-around junction field effect transistor

Semiconductor device

Integrated power semiconductor device and method for manufacturing...

Method of manufacturing a silicon carbide semiconductor device with...

Transistor structure

Techniques for fabricating planar charge balanced (CB) metal-oxide-...

Embedded JFETs for high voltage applications

Semiconductor device and method of making thereof

Silicon carbide semiconductor device with trench gate structure and...

Silicon carbide planar MOSFET with wave-shaped channel regions

Transistor structure with depletion-mode and enhancement mode-devices

Transistor structure

Semiconductor device with high voltage field effect transistor and...

Radiation-tolerant unit MOSFET hardened against single event effect...

Semiconductor device including an oxide semiconductor

Semiconductor device and method manufacturing the same

Junctionless/accumulation mode transistor with dynamic control

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SILICON CARBIDE SEMICONDUCTOR DEVICE

VERTICAL MOSFET WITH HIGH SHORT CIRCUIT WITHSTAND TIME CAPABILITY

DEPFET TRANSISTOR

SILICON CARBIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, POWER CONVERSIO...

SEMICONDUCTOR SWITCHING DEVICE

TRANSISTOR WITH INTEGRATED SOURCE-DRAIN DIODE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING MOSFET REGION AND DIODE REGION AND M...

METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) INCLUDI...

SEMICONDUCTOR POWER DEVICE WITH IMPROVED RUGGEDNESS

SILICON CARBIDE SEMICONDUCTOR DEVICE

CASCODE ARRANGEMENT AND SEMICONDUCTOR MODULE

SEMICONDUCTOR DEVICE COMPRISING A LATERAL SUPER JUNCTION FIELD EFFE...

SILICON CARBIDE SEMICONDUCTOR DEVICE, INVERTER CIRCUIT USING THE SA...

Silicon-Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transi...

TRANSISTOR STRUCTURE

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

FIELD EFFECT TRANSISTOR HAVING SAME GATE AND SOURCE DOPING, CELL ST...

SEMICONDUCTOR DEVICE

LEAKAGE INSENSITIVE TRANSISTOR CIRCUITS

DEPFET TRANSISTOR AND METHOD OF MANUFACTURING A DEPFET TRANSISTOR

FIELD-PLATE TRENCH FET AND ASSOCIATED METHOD FOR MANUFACTURING

FIELD-PLATE TRENCH FET AND ASSOCIATED METHOD FOR MANUFACTURING

SEMICONDUCTOR INTEGRATED CIRCUIT COMPONENT

CURRENT REFERENCE

TRANSISTOR STRUCTURE