the substrate being a semiconductor, using III-V technology

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/8252the substrate being a semiconductor, using III-V technology

Industries

Patents Grantslast 30 patents

Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,176,343
- Issue date Dec 24, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based multi-channel switching semiconductor device and meth...
- Patent number 12,159,871
- Issue date Dec 3, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Hui Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure of group III nitride semiconductor, ma...
- Patent number 12,148,822
- Issue date Nov 19, 2024
- GUANGDONG ZHINENG TECHNOLOGY CO., LTD.
- Zilan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power amplifier modules including semiconductor resistor and tantal...
- Patent number 12,143,077
- Issue date Nov 12, 2024
- Skyworks Solutions, Inc.
- Peter J. Zampardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices for integrated front-end circuits
- Patent number 12,132,052
- Issue date Oct 29, 2024
- MONDE Wireless, Inc.
- Matthew Guidry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor and resistor-transistor-logic circuit with GaN structure a...
- Patent number 12,132,043
- Issue date Oct 29, 2024
- United Microelectronics Corp.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device
- Patent number 12,125,845
- Issue date Oct 22, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,125,844
- Issue date Oct 22, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,125,847
- Issue date Oct 22, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qingyuan He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor and resistor-transistor-logic circuit with GaN structure a...
- Patent number 12,119,342
- Issue date Oct 15, 2024
- United Microelectronics Corp.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fringe capacitor, integrated circuit and manufacturing process for...
- Patent number 12,113,062
- Issue date Oct 8, 2024
- Texas Instruments Incorporated
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,094,875
- Issue date Sep 17, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Xin Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,087,762
- Issue date Sep 10, 2024
- Panasonic Holdings Corporation
- Daisuke Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,087,763
- Issue date Sep 10, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride integrated circuits including non-gold-based metall...
- Patent number 12,087,713
- Issue date Sep 10, 2024
- Analog Devices, Inc.
- Daniel Piedra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,074,159
- Issue date Aug 27, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,062,653
- Issue date Aug 13, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,046,593
- Issue date Jul 23, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Danfeng Mao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-shaped semiconductor device, fabrication method, and applicatio...
- Patent number 12,040,356
- Issue date Jul 16, 2024
- GUANGDONG ZHINENG TECHNOLOGY CO., LTD.
- Zilan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered substrate structures for power and RF applications
- Patent number 12,009,205
- Issue date Jun 11, 2024
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatus and circuits including transistors with different thresho...
- Patent number 11,973,078
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chan-Hong Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V semiconductor device with integrated power transistor and sta...
- Patent number 11,955,488
- Issue date Apr 9, 2024
- CAMBRIDGE GAN DEVICES LIMITED
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,955,521
- Issue date Apr 9, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,948,980
- Issue date Apr 2, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures and methods of manufacturing the same
- Patent number 11,942,560
- Issue date Mar 26, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Anbang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel polarization junction III-N transistors
- Patent number 11,942,378
- Issue date Mar 26, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic capacitance reduction in GaN devices
- Patent number 11,929,364
- Issue date Mar 12, 2024
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage blocking III-V semiconductor device
- Patent number 11,923,448
- Issue date Mar 5, 2024
- Infineon Technologies Austria AG
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 11,881,479
- Issue date Jan 23, 2024
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,869,887
- Issue date Jan 9, 2024
- Danfeng Mao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250006624
- Publication date Jan 2, 2025
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Hiroaki MARUYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED RESISTORS WITH INCREASED SHEET RESISTANCE FOR RF APPLICA...
- Publication number 20240429230
- Publication date Dec 26, 2024
- Wolfspeed, Inc.
- Matthew King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...
- Publication number 20240429228
- Publication date Dec 26, 2024
- UNITED MICROELECTRONICS CORP.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRINGE CAPACITOR, INTEGRATED CIRCUIT AND MANUFACTURING PROCESS FOR...
- Publication number 20240429233
- Publication date Dec 26, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL JUNCTION FIELD-EFFECT TRANSISTORS WITH SOURCE-DRAIN DIODE...
- Publication number 20240421151
- Publication date Dec 19, 2024
- Qorvo US, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD PLATES FOR INTEGRATED CIRCUITS
- Publication number 20240332369
- Publication date Oct 3, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Fuchao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING HIGH ELECTRON MOBILITY TRANSISTORS WITH CONTROLL...
- Publication number 20240304678
- Publication date Sep 12, 2024
- Woflspeed, Inc.
- Won Sang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND CIRCUITS INCLUDING TRANSISTORS WITH DIFFERENT THRESHO...
- Publication number 20240274599
- Publication date Aug 15, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chan-Hong CHERN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR OPTIMIZING PROTECTION CIRCUITS OF ELECTRONIC DEVICE CHIP...
- Publication number 20240250084
- Publication date Jul 25, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Jheng-Sheng YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240243121
- Publication date Jul 18, 2024
- Vanguard International Semiconductor Corporation
- Shin-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR REDUCED SUBSTRATE LOSS FOR GAN DEVICES
- Publication number 20240222365
- Publication date Jul 4, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Ebenezer Eshun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL DEVICE
- Publication number 20240194680
- Publication date Jun 13, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CAPACITANCE REDUCTION IN GAN-ON-SILICON DEVICES
- Publication number 20240178220
- Publication date May 30, 2024
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240145413
- Publication date May 2, 2024
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Makoto NISHIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked Multilayer 3D GaN High Electron Mobility Transistor Structu...
- Publication number 20240145478
- Publication date May 2, 2024
- Nanjing Greenchip Semiconductor Co., Ltd.
- Kuang-Po Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240128263
- Publication date Apr 18, 2024
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240096878
- Publication date Mar 21, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Danfeng MAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF
- Publication number 20240087962
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- MAN-HO KWAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR
- Publication number 20240079405
- Publication date Mar 7, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20240063218
- Publication date Feb 22, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qingyuan HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR IC CHIP AND METHOD FOR MANUFACTURING TH...
- Publication number 20240047451
- Publication date Feb 8, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Hui YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS
- Publication number 20240047201
- Publication date Feb 8, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Guy FEUILLET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES FOR INTEGRATED FRONT-END CIRCUITS
- Publication number 20240038761
- Publication date Feb 1, 2024
- MONDE Wireless Inc.
- Matthew Guidry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC COMPONENT COMPRISING A GALLIUM NITRIDE POWER TRANSISTOR
- Publication number 20240021604
- Publication date Jan 18, 2024
- STMicroelectronics Application GmbH
- Mathieu ROUVIERE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COUPON WAFER AND METHOD OF PREPARATION THEREOF
- Publication number 20230420305
- Publication date Dec 28, 2023
- ROCKLEY PHOTONICS LIMITED
- Ludovic CARO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC PIN AND SCHOTTKY DIODE INTEGRATED CIRCUITS
- Publication number 20230402549
- Publication date Dec 14, 2023
- MACOM Technology Solutions Holdings, Inc.
- Belinda Simone Edmee Piernas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structures With Improved Reliability
- Publication number 20230395531
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20230352476
- Publication date Nov 2, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Xin ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED MULTI-CHANNEL SWITCHING SEMICONDUCTOR DEVICE AND METH...
- Publication number 20230352487
- Publication date Nov 2, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Hui YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE DEVICES WITH THROUGH-VIA STRUCTURES
- Publication number 20230335464
- Publication date Oct 19, 2023
- Transphorm Technology, Inc.
- Geetak Gupta
- H01 - BASIC ELECTRIC ELEMENTS

the substrate being a semiconductor, using III-V technology

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nitride-based semiconductor bidirectional switching device and meth...

Nitride-based multi-channel switching semiconductor device and meth...

Integrated circuit structure of group III nitride semiconductor, ma...

Power amplifier modules including semiconductor resistor and tantal...

Devices for integrated front-end circuits

Resistor and resistor-transistor-logic circuit with GaN structure a...

Electronic device

Nitride-based semiconductor bidirectional switching device and meth...

Nitride-based semiconductor device and method for manufacturing the...

Resistor and resistor-transistor-logic circuit with GaN structure a...

Fringe capacitor, integrated circuit and manufacturing process for...

Nitride-based semiconductor device and method for manufacturing the...

Nitride semiconductor device

Nitride-based semiconductor bidirectional switching device and meth...

Gallium nitride integrated circuits including non-gold-based metall...

Nitride-based semiconductor bidirectional switching device and meth...

Nitride-based semiconductor bidirectional switching device and meth...

Semiconductor device and manufacturing method thereof

Fin-shaped semiconductor device, fabrication method, and applicatio...

Engineered substrate structures for power and RF applications

Apparatus and circuits including transistors with different thresho...

III-V semiconductor device with integrated power transistor and sta...

Manufacturable thin film gallium and nitrogen containing devices

Manufacturable thin film gallium and nitrogen containing devices

Semiconductor device structures and methods of manufacturing the same

Tunnel polarization junction III-N transistors

Parasitic capacitance reduction in GaN devices

High voltage blocking III-V semiconductor device

Nitride semiconductor device

Semiconductor device and manufacturing method thereof

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

INTEGRATED RESISTORS WITH INCREASED SHEET RESISTANCE FOR RF APPLICA...

RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...

FRINGE CAPACITOR, INTEGRATED CIRCUIT AND MANUFACTURING PROCESS FOR...

VERTICAL JUNCTION FIELD-EFFECT TRANSISTORS WITH SOURCE-DRAIN DIODE...

FIELD PLATES FOR INTEGRATED CIRCUITS

METHODS OF FORMING HIGH ELECTRON MOBILITY TRANSISTORS WITH CONTROLL...

APPARATUS AND CIRCUITS INCLUDING TRANSISTORS WITH DIFFERENT THRESHO...

METHOD FOR OPTIMIZING PROTECTION CIRCUITS OF ELECTRONIC DEVICE CHIP...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

METHOD AND STRUCTURE FOR REDUCED SUBSTRATE LOSS FOR GAN DEVICES

BIDIRECTIONAL DEVICE

PARASITIC CAPACITANCE REDUCTION IN GAN-ON-SILICON DEVICES

SEMICONDUCTOR DEVICE

Stacked Multilayer 3D GaN High Electron Mobility Transistor Structu...

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF

HIGH-ELECTRON-MOBILITY TRANSISTOR

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

NITRIDE-BASED SEMICONDUCTOR IC CHIP AND METHOD FOR MANUFACTURING TH...

METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS

DEVICES FOR INTEGRATED FRONT-END CIRCUITS

MONOLITHIC COMPONENT COMPRISING A GALLIUM NITRIDE POWER TRANSISTOR

COUPON WAFER AND METHOD OF PREPARATION THEREOF

MONOLITHIC PIN AND SCHOTTKY DIODE INTEGRATED CIRCUITS

Semiconductor Structures With Improved Reliability

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

NITRIDE-BASED MULTI-CHANNEL SWITCHING SEMICONDUCTOR DEVICE AND METH...

III-NITRIDE DEVICES WITH THROUGH-VIA STRUCTURES