the substrate being a semiconductor, using III-V technology

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/8252the substrate being a semiconductor, using III-V technology

Industries

Patents Grantslast 30 patents

Information Patent Grant
III-V semiconductor device with integrated power transistor and sta...
- Patent number 11,955,488
- Issue date Apr 9, 2024
- CAMBRIDGE GAN DEVICES LIMITED
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,955,521
- Issue date Apr 9, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,948,980
- Issue date Apr 2, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures and methods of manufacturing the same
- Patent number 11,942,560
- Issue date Mar 26, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Anbang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel polarization junction III-N transistors
- Patent number 11,942,378
- Issue date Mar 26, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic capacitance reduction in GaN devices
- Patent number 11,929,364
- Issue date Mar 12, 2024
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage blocking III-V semiconductor device
- Patent number 11,923,448
- Issue date Mar 5, 2024
- Infineon Technologies Austria AG
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 11,881,479
- Issue date Jan 23, 2024
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,869,887
- Issue date Jan 9, 2024
- Danfeng Mao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing thereof
- Patent number 11,854,909
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic circuit comprising diodes
- Patent number 11,830,873
- Issue date Nov 28, 2023
- STMicroelectronics (Tours) SAS
- Arnaud Yvon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,817,356
- Issue date Nov 14, 2023
- Murata Manufacturing Co., Ltd.
- Yasunari Umemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic component comprising a gallium nitride power transistor
- Patent number 11,810,911
- Issue date Nov 7, 2023
- STMicroelectronics Application GmbH
- Mathieu Rouviere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride transistor structure capable of reducing leakage...
- Patent number 11,810,910
- Issue date Nov 7, 2023
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO) , CHINESE ACADEMY OF...
- Xing Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing gallium nitride semiconductor device
- Patent number 11,784,039
- Issue date Oct 10, 2023
- Denso Corporation
- Jun Kojima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
E-D mode 2DEG FET with gate spacer to locally tune VT and improve b...
- Patent number 11,757,027
- Issue date Sep 12, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,742,418
- Issue date Aug 29, 2023
- United Microelectronics Corp.
- Chun-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 11,721,692
- Issue date Aug 8, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for active devices
- Patent number 11,705,486
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and circuits with dual threshold voltage transistors and...
- Patent number 11,682,676
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chan-Hong Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic circuit with indium nitride quantum well
- Patent number 11,670,637
- Issue date Jun 6, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures and methods of forming thereof
- Patent number 11,664,456
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hsien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a plurality of bipolar transistors with...
- Patent number 11,658,180
- Issue date May 23, 2023
- Murata Manufacturing Co., Ltd.
- Isao Obu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor and resistor-transistor-logic circuit with GaN structure a...
- Patent number 11,631,664
- Issue date Apr 18, 2023
- United Microelectronics Corp.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and power amplifier module
- Patent number 11,621,678
- Issue date Apr 4, 2023
- Murata Manufacturing Co., Ltd.
- Isao Obu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical diode in stacked transistor architecture
- Patent number 11,616,056
- Issue date Mar 28, 2023
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Side-by-side integration of III-n transistors and thin-film transis...
- Patent number 11,610,887
- Issue date Mar 21, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure of N-face group III nitride, active device, and...
- Patent number 11,605,731
- Issue date Mar 14, 2023
- Chih-Shu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of passive components in III-N devices
- Patent number 11,587,924
- Issue date Feb 21, 2023
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and circuits including transistors with different thresho...
- Patent number 11,581,310
- Issue date Feb 14, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chan-Hong Chern
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240128263
- Publication date Apr 18, 2024
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240096878
- Publication date Mar 21, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Danfeng MAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF
- Publication number 20240087962
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- MAN-HO KWAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR
- Publication number 20240079405
- Publication date Mar 7, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20240063218
- Publication date Feb 22, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qingyuan HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS
- Publication number 20240047201
- Publication date Feb 8, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Guy FEUILLET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR IC CHIP AND METHOD FOR MANUFACTURING TH...
- Publication number 20240047451
- Publication date Feb 8, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Hui YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES FOR INTEGRATED FRONT-END CIRCUITS
- Publication number 20240038761
- Publication date Feb 1, 2024
- MONDE Wireless Inc.
- Matthew Guidry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC COMPONENT COMPRISING A GALLIUM NITRIDE POWER TRANSISTOR
- Publication number 20240021604
- Publication date Jan 18, 2024
- STMicroelectronics Application GmbH
- Mathieu ROUVIERE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COUPON WAFER AND METHOD OF PREPARATION THEREOF
- Publication number 20230420305
- Publication date Dec 28, 2023
- ROCKLEY PHOTONICS LIMITED
- Ludovic CARO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC PIN AND SCHOTTKY DIODE INTEGRATED CIRCUITS
- Publication number 20230402549
- Publication date Dec 14, 2023
- MACOM Technology Solutions Holdings, Inc.
- Belinda Simone Edmee Piernas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structures With Improved Reliability
- Publication number 20230395531
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20230352476
- Publication date Nov 2, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Xin ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED MULTI-CHANNEL SWITCHING SEMICONDUCTOR DEVICE AND METH...
- Publication number 20230352487
- Publication date Nov 2, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Hui YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE DEVICES WITH THROUGH-VIA STRUCTURES
- Publication number 20230335464
- Publication date Oct 19, 2023
- Transphorm Technology, Inc.
- Geetak Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIELD EFFECT TRANSISTOR
- Publication number 20230326921
- Publication date Oct 12, 2023
- International Business Machines Corporation
- Eunjung Cha
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ISOLATION STRUCTURE FOR ACTIVE DEVICES
- Publication number 20230299133
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND CIRCUITS WITH DUAL THRESHOLD VOLTAGE TRANSISTORS AND...
- Publication number 20230290782
- Publication date Sep 14, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chan-Hong CHERN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin-Shaped Semiconductor Device, Fabrication Method, and Applicatio...
- Publication number 20230268381
- Publication date Aug 24, 2023
- Zilan LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE TRANSISTOR STRUCTURE CAPABLE OF REDUCING LEAKAGE...
- Publication number 20230260988
- Publication date Aug 17, 2023
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO) , CHINESE ACADEMY OF...
- Xing WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...
- Publication number 20230223399
- Publication date Jul 13, 2023
- UNITED MICROELECTRONICS CORP.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...
- Publication number 20230223400
- Publication date Jul 13, 2023
- UNITED MICROELECTRONICS CORP.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND CIRCUITS INCLUDING TRANSISTORS WITH DIFFERENT THRESHO...
- Publication number 20230187440
- Publication date Jun 15, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chan-Hong CHERN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS
- Publication number 20230178367
- Publication date Jun 8, 2023
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURABLE GALLIUM CONTAINING ELECTRONIC DEVICES
- Publication number 20230178611
- Publication date Jun 8, 2023
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE INTEGRATED CIRCUITS
- Publication number 20230154875
- Publication date May 18, 2023
- Analog Devices, Inc.
- Daniel Piedra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALUMINUM-BASED GALLIUM NITRIDE INTEGRATED CIRCUITS
- Publication number 20230133481
- Publication date May 4, 2023
- Analog Devices, Inc.
- Daniel Piedra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH AN AUXILIARY GATE STRUCTURE
- Publication number 20230131602
- Publication date Apr 27, 2023
- CAMBRIDGE ENTERPRISE LIMITED
- Martin ARNOLD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CHIP AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230116302
- Publication date Apr 13, 2023
- DENSO CORPORATION
- MASATAKE NAGAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230095367
- Publication date Mar 30, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS

the substrate being a semiconductor, using III-V technology

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

III-V semiconductor device with integrated power transistor and sta...

Manufacturable thin film gallium and nitrogen containing devices

Manufacturable thin film gallium and nitrogen containing devices

Semiconductor device structures and methods of manufacturing the same

Tunnel polarization junction III-N transistors

Parasitic capacitance reduction in GaN devices

High voltage blocking III-V semiconductor device

Nitride semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor structure and method for manufacturing thereof

Electronic circuit comprising diodes

Semiconductor device

Monolithic component comprising a gallium nitride power transistor

Group III nitride transistor structure capable of reducing leakage...

Method for manufacturing gallium nitride semiconductor device

E-D mode 2DEG FET with gate spacer to locally tune VT and improve b...

Semiconductor device

Semiconductor device and fabrication method thereof

Isolation structure for active devices

Apparatus and circuits with dual threshold voltage transistors and...

Logic circuit with indium nitride quantum well

Semiconductor structures and methods of forming thereof

Semiconductor device having a plurality of bipolar transistors with...

Resistor and resistor-transistor-logic circuit with GaN structure a...

Semiconductor device and power amplifier module

Vertical diode in stacked transistor architecture

Side-by-side integration of III-n transistors and thin-film transis...

Epitaxial structure of N-face group III nitride, active device, and...

Integration of passive components in III-N devices

Apparatus and circuits including transistors with different thresho...

Patents Applicationslast 30 patents

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF

HIGH-ELECTRON-MOBILITY TRANSISTOR

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS

NITRIDE-BASED SEMICONDUCTOR IC CHIP AND METHOD FOR MANUFACTURING TH...

DEVICES FOR INTEGRATED FRONT-END CIRCUITS

MONOLITHIC COMPONENT COMPRISING A GALLIUM NITRIDE POWER TRANSISTOR

COUPON WAFER AND METHOD OF PREPARATION THEREOF

MONOLITHIC PIN AND SCHOTTKY DIODE INTEGRATED CIRCUITS

Semiconductor Structures With Improved Reliability

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

NITRIDE-BASED MULTI-CHANNEL SWITCHING SEMICONDUCTOR DEVICE AND METH...

III-NITRIDE DEVICES WITH THROUGH-VIA STRUCTURES

SEMICONDUCTOR DEVICE WITH FIELD EFFECT TRANSISTOR

ISOLATION STRUCTURE FOR ACTIVE DEVICES

APPARATUS AND CIRCUITS WITH DUAL THRESHOLD VOLTAGE TRANSISTORS AND...

Fin-Shaped Semiconductor Device, Fabrication Method, and Applicatio...

GROUP III NITRIDE TRANSISTOR STRUCTURE CAPABLE OF REDUCING LEAKAGE...

RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...

RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...

APPARATUS AND CIRCUITS INCLUDING TRANSISTORS WITH DIFFERENT THRESHO...

ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS

MANUFACTURABLE GALLIUM CONTAINING ELECTRONIC DEVICES

GALLIUM NITRIDE INTEGRATED CIRCUITS

ALUMINUM-BASED GALLIUM NITRIDE INTEGRATED CIRCUITS

POWER SEMICONDUCTOR DEVICE WITH AN AUXILIARY GATE STRUCTURE

SEMICONDUCTOR CHIP AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME