the substrate being of insulating material

Industry

CPC
C30B25/205

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B25/00Single-crystal growth by chemical reaction of reactive gases

Current Industry

C30B25/205the substrate being of insulating material

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacture of single crystal synthetic diamond material
- Patent number 12,065,756
- Issue date Aug 20, 2024
- Element Six Technologies Limited
- Ian Friel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal synthetic diamond material
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- Issue date Jul 16, 2024
- Element Six Technologies Limited
- Andrew Mark Edmonds
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Information Patent Grant
Method of producing a synthetic diamond
- Patent number 12,037,703
- Issue date Jul 16, 2024
- ECOTRICITY GROUP LIMITED
- Dale Vince
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Single crystal synthetic diamond material
- Patent number 11,821,107
- Issue date Nov 21, 2023
- Element Six Technologies Limited
- Andrew Mark Edmonds
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer
- Patent number 11,795,577
- Issue date Oct 24, 2023
- Resonac Corporation
- Kensho Tanaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacture of single crystal synthetic diamond material
- Patent number 11,643,750
- Issue date May 9, 2023
- Element Six Technologies Limited
- Ian Friel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN fil...
- Patent number 11,443,942
- Issue date Sep 13, 2022
- The Government of the United States of America, as represented by the Secreta...
- Neeraj Nepal
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate, method for manufacturing silicon carbide...
- Patent number 11,094,835
- Issue date Aug 17, 2021
- Mitsubishi Electric Corporation
- Tomoaki Furusho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal synthetic diamond material via chemical vapour depos...
- Patent number 11,060,204
- Issue date Jul 13, 2021
- Element Six Technologies Limited
- Daniel James Twitchen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semi-insulating silicon carbide crystalline ingot having a resistiv...
- Patent number 11,041,255
- Issue date Jun 22, 2021
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing a synthetic diamond
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- Issue date Jun 1, 2021
- ECOTRICITY GROUP LIMITED
- Dale Vince
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Diamond components for quantum imaging, sensing and information pro...
- Patent number 10,883,194
- Issue date Jan 5, 2021
- Element Six Technologies Limited
- Matthew Markham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical quality diamond material
- Patent number 10,851,471
- Issue date Dec 1, 2020
- Element Six Technologies Limited
- Herman Philip Godfried
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Single-crystal diamond, method for manufacturing single-crystal dia...
- Patent number 10,737,943
- Issue date Aug 11, 2020
- Sumitomo Electric Industries, Ltd
- Takuya Nohara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Microwave plasma reactor for manufacturing synthetic diamond material
- Patent number 10,734,198
- Issue date Aug 4, 2020
- Element Six Technologies Limited
- John Robert Brandon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-crystal diamond material, and tool, radiation temperature mo...
- Patent number 10,697,088
- Issue date Jun 30, 2020
- Sumitomo Electric Industries, Ltd
- Yoshiki Nishibayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Growth of epitaxial gallium nitride material using a thermally matc...
- Patent number 10,655,243
- Issue date May 19, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semi-finished product, method for the production thereof and compon...
- Patent number 10,564,351
- Issue date Feb 18, 2020
- Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung E.V.
- Christoph E. Nebel
- G02 - OPTICS
Information Patent Grant
Optical quality diamond material
- Patent number 10,125,434
- Issue date Nov 13, 2018
- Element Six Technologies Limited
- Herman Philip Godfried
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Growth method of graphene
- Patent number 10,017,878
- Issue date Jul 10, 2018
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy...
- Haomin Wang
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Information Patent Grant
Method of producing a synthetic diamond
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- Issue date Jun 12, 2018
- ECOTRICITY GROUP LIMITED
- Dale Vince
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and...
- Patent number 9,773,666
- Issue date Sep 26, 2017
- The United States of America, as represented by the Secretary of the Navy
- Neeraj Nepal
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium-nitride-on-diamond wafers and manufacturing equipment and m...
- Patent number 9,359,693
- Issue date Jun 7, 2016
- Element Six Technologies US Corporation
- Daniel Francis
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of selectively forming atomically flat plane on diamond surf...
- Patent number 7,989,260
- Issue date Aug 2, 2011
- National Institute of Advanced Industrial Science and Technology
- Norio Tokuda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Composition comprising rare-earth dielectric
- Patent number 7,655,327
- Issue date Feb 2, 2010
- Translucent, Inc.
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a rare-earth dielectric layer
- Patent number 7,384,481
- Issue date Jun 10, 2008
- Translucent Photonics, Inc.
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CVD Process for producing monocrystalline silicon-on-cubic zirconia...
- Patent number 4,447,497
- Issue date May 8, 1984
- Rockwell International Corporation
- Harold M. Manasevit
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial composite and method of making
- Patent number 4,368,098
- Issue date Jan 11, 1983
- Rockwell International Corporation
- Harold M. Manasevit
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for smoothing surfaces of crystalline materials
- Patent number 4,339,300
- Issue date Jul 13, 1982
- Lowell A. Noble
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of improving silicon crystal perfection in silicon on sapphi...
- Patent number 4,279,688
- Issue date Jul 21, 1981
- RCA Corporation
- Marvin S. Abrahams
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
GAN SUBSTRATE
- Publication number 20240413209
- Publication date Dec 12, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
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- Publication number 20240413210
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- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR DEPOSITING PHOSPHORUS CONTAINING SILICON LAYER
- Publication number 20240213022
- Publication date Jun 27, 2024
- ASM IP HOLDING B.V.
- Brendan Marozas
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL
- Publication number 20240060210
- Publication date Feb 22, 2024
- ELEMENT SIX TECHNOLOGIES LIMITED
- ANDREW MARK EDMONDS
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING A SUBSTRATE FOR THE EPITAXIAL GROWTH OF A LAYE...
- Publication number 20230374701
- Publication date Nov 23, 2023
- SOITEC
- Eric Guiot
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURE OF SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL
- Publication number 20230272551
- Publication date Aug 31, 2023
- ELEMENT SIX TECHNOLOGIES LIMITED
- IAN FRIEL
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER
- Publication number 20230038132
- Publication date Feb 9, 2023
- SHOWA DENKO K.K.
- Kensho TANAKA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS FOR FORMING AN EPITAXIAL WAFER
- Publication number 20220359195
- Publication date Nov 10, 2022
- GLOBALWAFERS CO., LTD.
- Maria Porrini
- C30 - CRYSTAL GROWTH
Information Patent Application
ANISOTROPIC EPITAXIAL GROWTH
- Publication number 20220319844
- Publication date Oct 6, 2022
- Applied Materials, Inc.
- Chia Cheng CHIN
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL COMPOSITE SYNTHETIC DIAMOND MATERIAL
- Publication number 20220154368
- Publication date May 19, 2022
- ELEMENT SIX TECHNOLOGIES LIMITED
- ANDREW MARK EDMONDS
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF MANUFACTURE OF SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL
- Publication number 20210285125
- Publication date Sep 16, 2021
- ELEMENT SIX TECHNOLOGIES LIMITED
- IAN FRIEL
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING A SYNTHETIC DIAMOND
- Publication number 20210285127
- Publication date Sep 16, 2021
- ECOTRICITY GROUP LIMITED
- Dale Vince
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOS...
- Publication number 20210115590
- Publication date Apr 22, 2021
- ELEMENT SIX TECHNOLOGIES LIMITED
- DANIEL JAMES TWITCHEN
- C30 - CRYSTAL GROWTH
Information Patent Application
OPTICAL QUALITY DIAMOND MATERIAL
- Publication number 20210115591
- Publication date Apr 22, 2021
- ELEMENT SIX TECHNOLOGIES LIMITED
- HERMAN PHILIP GODFRIED
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SILICONE CARBIDE CRYSTALS AND MANUFACTURING METHOD THEREOF
- Publication number 20200190693
- Publication date Jun 18, 2020
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SILICON CARBIDE...
- Publication number 20200013907
- Publication date Jan 9, 2020
- Mitsubishi Electric Corporation
- Tomoaki FURUSHO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME
- Publication number 20190376206
- Publication date Dec 12, 2019
- SHOWA DENKO K.K.
- Keisuke FUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
OPTICAL QUALITY DIAMOND MATERIAL
- Publication number 20190055669
- Publication date Feb 21, 2019
- ELEMENT SIX TECHNOLOGIES LIMITED
- HERMAN PHILIP GODFRIED
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING A SYNTHETIC DIAMOND
- Publication number 20180223449
- Publication date Aug 9, 2018
- ECOTRICITY GROUP LIMITED
- Dale Vince
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Plasma-Assisted Atomic Layer Epitaxy of Cubic and Hexagonal InN Fil...
- Publication number 20180040472
- Publication date Feb 8, 2018
- The Government of the United States of America, as represented by the Secreta...
- Neeraj Nepal
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH METHOD OF GRAPHENE
- Publication number 20180002831
- Publication date Jan 4, 2018
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- HAOMIN WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
A MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATE...
- Publication number 20170040145
- Publication date Feb 9, 2017
- ELEMENT SIX TECHNOLOGIES LIMITED
- JOHN ROBERT BRANDON
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium-Nitride-On-Diamond Wafers and Manufacturing Equipment and M...
- Publication number 20130298823
- Publication date Nov 14, 2013
- Daniel Francis
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING MAGNESIUM-ZINC-OXIDE-BASED CRYSTAL
- Publication number 20130269600
- Publication date Oct 17, 2013
- Yuka SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
Composition Comprising Rare-earth Dielectric
- Publication number 20110037048
- Publication date Feb 17, 2011
- Translucent, Inc.
- Petar Atanackovic
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Selectively Forming Atomically Flat Plane on Diamond Surf...
- Publication number 20090127566
- Publication date May 21, 2009
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Norio Tokuda
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of forming a rare-earth dielectric layer
- Publication number 20060060131
- Publication date Mar 23, 2006
- Translucent, Inc.
- Petar Atanackovic
- C30 - CRYSTAL GROWTH
Information Patent Application
Composition comprising rare-earth dielectric
- Publication number 20060060826
- Publication date Mar 23, 2006
- Translucent, Inc.
- Petar Atanackovic
- C30 - CRYSTAL GROWTH

the substrate being of insulating material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacture of single crystal synthetic diamond material

Single crystal synthetic diamond material

Method of producing a synthetic diamond

Single crystal synthetic diamond material

SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer

Method of manufacture of single crystal synthetic diamond material

Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN fil...

Silicon carbide substrate, method for manufacturing silicon carbide...

Single crystal synthetic diamond material via chemical vapour depos...

Semi-insulating silicon carbide crystalline ingot having a resistiv...

Method of producing a synthetic diamond

Diamond components for quantum imaging, sensing and information pro...

Optical quality diamond material

Single-crystal diamond, method for manufacturing single-crystal dia...

Microwave plasma reactor for manufacturing synthetic diamond material

Single-crystal diamond material, and tool, radiation temperature mo...

Growth of epitaxial gallium nitride material using a thermally matc...

Semi-finished product, method for the production thereof and compon...

Optical quality diamond material

Growth method of graphene

Method of producing a synthetic diamond

Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and...

Gallium-nitride-on-diamond wafers and manufacturing equipment and m...

Method of selectively forming atomically flat plane on diamond surf...

Composition comprising rare-earth dielectric

Method of forming a rare-earth dielectric layer

CVD Process for producing monocrystalline silicon-on-cubic zirconia...

Epitaxial composite and method of making

Process for smoothing surfaces of crystalline materials

Method of improving silicon crystal perfection in silicon on sapphi...

Patents Applicationslast 30 patents

GAN SUBSTRATE

GAN EPITAXIAL SUBSTRATE

METHOD FOR DEPOSITING PHOSPHORUS CONTAINING SILICON LAYER

SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL

METHOD FOR PRODUCING A SUBSTRATE FOR THE EPITAXIAL GROWTH OF A LAYE...

METHOD OF MANUFACTURE OF SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL

SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER

METHODS FOR FORMING AN EPITAXIAL WAFER

ANISOTROPIC EPITAXIAL GROWTH

SINGLE CRYSTAL COMPOSITE SYNTHETIC DIAMOND MATERIAL

METHOD OF MANUFACTURE OF SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL

METHOD OF PRODUCING A SYNTHETIC DIAMOND

SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOS...

OPTICAL QUALITY DIAMOND MATERIAL

SILICONE CARBIDE CRYSTALS AND MANUFACTURING METHOD THEREOF

SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SILICON CARBIDE...

SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME

OPTICAL QUALITY DIAMOND MATERIAL

METHOD OF PRODUCING A SYNTHETIC DIAMOND

Plasma-Assisted Atomic Layer Epitaxy of Cubic and Hexagonal InN Fil...

GROWTH METHOD OF GRAPHENE

A MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATE...

Gallium-Nitride-On-Diamond Wafers and Manufacturing Equipment and M...

METHOD FOR GROWING MAGNESIUM-ZINC-OXIDE-BASED CRYSTAL

Composition Comprising Rare-earth Dielectric

Method of Selectively Forming Atomically Flat Plane on Diamond Surf...

Method of forming a rare-earth dielectric layer

Composition comprising rare-earth dielectric