the substrate being other than a semiconductor body

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/84the substrate being other than a semiconductor body

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices including protruding insulation portions betw...
- Patent number 11,955,517
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Shigenobu Maeda
- B82 - NANO-TECHNOLOGY
Information Patent Grant
3D semiconductor devices and structures with transistors
- Patent number 11,956,976
- Issue date Apr 9, 2024
- Monolithic 3D Inc.
- Deepak C. Sekar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,955,551
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device and method of manufacturing the same
- Patent number 11,943,968
- Issue date Mar 26, 2024
- Samsung Display Co., Ltd.
- Minsoo Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,942,480
- Issue date Mar 26, 2024
- Samsung Electronics Co., Ltd.
- Il Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having asymmetric threshold voltage and buck converter
- Patent number 11,936,299
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chu Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 11,935,895
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin structure and method of forming same through two-step etching p...
- Patent number 11,935,889
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing semiconductor devices
- Patent number 11,935,835
- Issue date Mar 19, 2024
- Samsung Electronics Co., Ltd.
- Hyo-Jin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having work-function metal and method of formi...
- Patent number 11,929,289
- Issue date Mar 12, 2024
- Samsung Electronics Co., Ltd.
- Juyoun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forksheet transistors with dielectric or conductive spine
- Patent number 11,923,370
- Issue date Mar 5, 2024
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,923,372
- Issue date Mar 5, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- G11 - INFORMATION STORAGE
Information Patent Grant
3D semiconductor device and structure with metal layers
- Patent number 11,923,374
- Issue date Mar 5, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures for radiofrequency applications and related methods
- Patent number 11,923,239
- Issue date Mar 5, 2024
- Soitec
- Eric Desbonnets
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with bonding
- Patent number 11,923,230
- Issue date Mar 5, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices
- Patent number 11,916,078
- Issue date Feb 27, 2024
- Samsung Electronics Co., Ltd.
- Sohyeon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 11,916,079
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Te-An Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having epitaxy source/drain regions
- Patent number 11,916,071
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a FinFET device including a step of recessing a su...
- Patent number 11,908,939
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia Tai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having merged epitaxial features with arc-like...
- Patent number 11,908,742
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with memory
- Patent number 11,901,210
- Issue date Feb 13, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods related to radio-frequency switching devices having improve...
- Patent number 11,901,243
- Issue date Feb 13, 2024
- Skyworks Solutions, Inc.
- Guillaume Alexandre Blin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF switch device with a sidewall spacer having a low dielectric con...
- Patent number 11,901,435
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion barrier layer for source and drain structures to increase...
- Patent number 11,901,413
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuei-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a sacrificial liner for dual channel devices
- Patent number 11,894,462
- Issue date Feb 6, 2024
- Adeia Semiconductor Solutions LLC
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-integrated logic, electrostatic discharge, and well contact devi...
- Patent number 11,894,361
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and methods of fabricating such devices
- Patent number 11,894,376
- Issue date Feb 6, 2024
- Samsung Electronics Co., Ltd.
- Dae-Won Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staking nanosheet transistors
- Patent number 11,894,383
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Pochun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Set of integrated standard cells
- Patent number 11,894,382
- Issue date Feb 6, 2024
- STMicroelectronics France
- Olivier Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device having oxide region between vertical fin structures
- Patent number 11,894,275
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY
- Publication number 20240128116
- Publication date Apr 18, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE WITH LATERALLY GRADED CHANNEL REGION
- Publication number 20240128322
- Publication date Apr 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- George R. MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS
- Publication number 20240120332
- Publication date Apr 11, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE
- Publication number 20240113104
- Publication date Apr 4, 2024
- Intel Corporation
- Sukru Yemenicioglu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE
- Publication number 20240113120
- Publication date Apr 4, 2024
- SONY GROUP CORPORATION
- Hidetoshi OISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY N...
- Publication number 20240113125
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH SINGLE-CRYSTAL LAYERS
- Publication number 20240112942
- Publication date Apr 4, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS
- Publication number 20240113128
- Publication date Apr 4, 2024
- Intel Corporation
- Walid M. HAFEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SET OF INTEGRATED STANDARD CELLS
- Publication number 20240105730
- Publication date Mar 28, 2024
- STMicroelectronics France
- Olivier WEBER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structures And Methods Of Forming The Same
- Publication number 20240105707
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Chiang Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240105720
- Publication date Mar 28, 2024
- UNITED MICROELECTRONICS CORP.
- Chun-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET CONTACT FORMATION
- Publication number 20240105590
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Koichi Motoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY
- Publication number 20240105490
- Publication date Mar 28, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
Fin Field-Effect Transistor Device and Method of Forming the Same
- Publication number 20240105818
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT, SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING...
- Publication number 20240096712
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Wei Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTOR ON SOI STRUCTURE
- Publication number 20240097030
- Publication date Mar 21, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Sebastien CREMER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATING THE SAME
- Publication number 20240096885
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTOR ON SOI STRUCTURE
- Publication number 20240096898
- Publication date Mar 21, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Tadeu MOTA FRUTUOSO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
S-Contact for SOI
- Publication number 20240088151
- Publication date Mar 14, 2024
- pSemi Corporation
- Befruz Tasbas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES ISOLATED BY POROUS SEMICONDUCTOR MA...
- Publication number 20240088157
- Publication date Mar 14, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Michel Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION...
- Publication number 20240079330
- Publication date Mar 7, 2024
- Samsung Electronics Co., Ltd.
- Wonhyuk Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS
- Publication number 20240072060
- Publication date Feb 29, 2024
- Samsung Electronics Co., Ltd.
- BYOUNGHAK HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED SOI STRUCTURE FOR LOW LEAKAGE MOS CAPACITOR
- Publication number 20240071812
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Lei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FDSOI DEVICE INCLUDING SELF-ALIGNED DIFFUSION BREAK
- Publication number 20240072059
- Publication date Feb 29, 2024
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate All-Around (GAA) Field Effect Transistors (FETS) Formed on Bot...
- Publication number 20240072070
- Publication date Feb 29, 2024
- Marvell Asia Pte Ltd.
- Runzi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming SiGe Channel
- Publication number 20240072168
- Publication date Feb 29, 2024
- Shanghai Huali Integrated Circuit Corporation
- Xinhua Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATES OF SEMICONDUCTOR DEVICES HAVING VARYING THICKNESSES OF S...
- Publication number 20240063225
- Publication date Feb 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- DAVID PRITCHARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED LONG CHANNEL TRANSISTOR
- Publication number 20240063189
- Publication date Feb 22, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE INCLUDING TRANSISTOR USING BURIED INSULATOR LAYER AS GATE...
- Publication number 20240055434
- Publication date Feb 15, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Tom Herrmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH BONDING
- Publication number 20240055291
- Publication date Feb 15, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE

the substrate being other than a semiconductor body

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor devices including protruding insulation portions betw...

3D semiconductor devices and structures with transistors

Semiconductor device and manufacturing method thereof

Display device and method of manufacturing the same

Semiconductor device

Transistor having asymmetric threshold voltage and buck converter

Semiconductor device structure and methods of forming the same

Fin structure and method of forming same through two-step etching p...

Methods of manufacturing semiconductor devices

Semiconductor device having work-function metal and method of formi...

Forksheet transistors with dielectric or conductive spine

Semiconductor device

3D semiconductor device and structure with metal layers

Structures for radiofrequency applications and related methods

3D semiconductor device and structure with bonding

Semiconductor devices

Semiconductor structure

Semiconductor device having epitaxy source/drain regions

Method of making a FinFET device including a step of recessing a su...

Semiconductor device having merged epitaxial features with arc-like...

3D semiconductor device and structure with memory

Methods related to radio-frequency switching devices having improve...

RF switch device with a sidewall spacer having a low dielectric con...

Diffusion barrier layer for source and drain structures to increase...

Forming a sacrificial liner for dual channel devices

Co-integrated logic, electrostatic discharge, and well contact devi...

Integrated circuit devices and methods of fabricating such devices

Staking nanosheet transistors

Set of integrated standard cells

FinFET device having oxide region between vertical fin structures

Patents Applicationslast 30 patents

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY

DEVICE WITH LATERALLY GRADED CHANNEL REGION

3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS

FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE

COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE

POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY N...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH SINGLE-CRYSTAL LAYERS

HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS

SET OF INTEGRATED STANDARD CELLS

Semiconductor Structures And Methods Of Forming The Same

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

STACKED FET CONTACT FORMATION

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH MEMORY

Fin Field-Effect Transistor Device and Method of Forming the Same

INTEGRATED CIRCUIT, SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING...

MOS TRANSISTOR ON SOI STRUCTURE

SEMICONDUCTOR DEVICE AND FABRICATING THE SAME

MOS TRANSISTOR ON SOI STRUCTURE

S-Contact for SOI

SEMICONDUCTOR DEVICE STRUCTURES ISOLATED BY POROUS SEMICONDUCTOR MA...

INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION...

DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS

EMBEDDED SOI STRUCTURE FOR LOW LEAKAGE MOS CAPACITOR

FDSOI DEVICE INCLUDING SELF-ALIGNED DIFFUSION BREAK

Gate All-Around (GAA) Field Effect Transistors (FETS) Formed on Bot...

Method for Forming SiGe Channel

SUBSTRATES OF SEMICONDUCTOR DEVICES HAVING VARYING THICKNESSES OF S...

STACKED LONG CHANNEL TRANSISTOR

STRUCTURE INCLUDING TRANSISTOR USING BURIED INSULATOR LAYER AS GATE...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH BONDING