the thickness being non-uniform

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H01L29/42368

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/42368the thickness being non-uniform

Industries

Patents Grantslast 30 patents

Information Patent Grant
Power MOSFETs structure
- Patent number 11,967,645
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yogendra Yadav
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device with a dual gate dielectri...
- Patent number 11,968,828
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,961,890
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Fu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Imaging element, imaging device, and manufacturing apparatus and me...
- Patent number 11,961,857
- Issue date Apr 16, 2024
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Shinpei Fukuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,948,975
- Issue date Apr 2, 2024
- United Microelectronics Corp.
- Chih-Kai Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with high voltage device
- Patent number 11,942,543
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Chou Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating hydrogen treated surface of semiconductor de...
- Patent number 11,929,410
- Issue date Mar 12, 2024
- SK Hynix Inc.
- Jin Woong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed access devices and methods of forming a recessed access de...
- Patent number 11,929,411
- Issue date Mar 12, 2024
- Micron Technology, Inc.
- Sau Ha Cheung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 11,923,428
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chi Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,923,427
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including transistor stacks having diffe...
- Patent number 11,923,365
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Jeonghyuk Yim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device including a doped gate electrode
- Patent number 11,908,916
- Issue date Feb 20, 2024
- SK HYNIX SYSTEM IC INC.
- Soon Yeol Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral transistors and methods with low-voltage-drop shunt to body...
- Patent number 11,888,047
- Issue date Jan 30, 2024
- MaxPower Semiconductor, Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,888,058
- Issue date Jan 30, 2024
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with improved safe operating area
- Patent number 11,888,060
- Issue date Jan 30, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Prasad Venkatraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor including integrated antifuse
- Patent number 11,882,695
- Issue date Jan 23, 2024
- Samsung Electronics Co., Ltd.
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,869,961
- Issue date Jan 9, 2024
- Fuji Electric Co., Ltd.
- Hiroshi Miyata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage metal-oxide-semiconductor (HVMOS) device integrated wi...
- Patent number 11,862,675
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Karthick Murukesan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having insulator FIN...
- Patent number 11,862,702
- Issue date Jan 2, 2024
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,855,080
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,843,039
- Issue date Dec 12, 2023
- Samsung Electronics Co., Ltd.
- Doosan Back
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,830,945
- Issue date Nov 28, 2023
- Kabushiki Kaisha Toshiba
- Kentaro Ichinoseki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having a field plate in an elongate active trench
- Patent number 11,824,114
- Issue date Nov 21, 2023
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,817,355
- Issue date Nov 14, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Hu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate trench
- Patent number 11,812,606
- Issue date Nov 7, 2023
- Micron Technology, Inc.
- Toshiyasu Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,804,545
- Issue date Oct 31, 2023
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,804,530
- Issue date Oct 31, 2023
- Samsung Electronics Co., Ltd.
- Munhyeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thicker corner of a gate dielectric structure around a recessed gat...
- Patent number 11,799,007
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having multi-channel active regions and metho...
- Patent number 11,798,949
- Issue date Oct 24, 2023
- Samsung Electronics Co., Ltd.
- Munhyeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an air gap and method for fabricating t...
- Patent number 11,791,390
- Issue date Oct 17, 2023
- SK Hynix Inc.
- Se-Han Kwon
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHODS FOR MANUFACTURING THE SAME
- Publication number 20240128313
- Publication date Apr 18, 2024
- Vanguard International Semiconductor Corporation
- Tse-Hsiao LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SHIELDED TRANSISTOR
- Publication number 20240113217
- Publication date Apr 4, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE GATE DIELECTRIC FOR HIGH-VOLTAGE DEVICE
- Publication number 20240113187
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhu-Min Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS DESIGNED WITH REDUCED LEAKAGE
- Publication number 20240105793
- Publication date Mar 28, 2024
- pSemi Corporation
- Simon WILLARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE FABRICATION METHOD OF AN U-METAL-OXIDE-SEMICONDUCTOR FIELD-EFF...
- Publication number 20240105816
- Publication date Mar 28, 2024
- National Yang Ming Chiao Tung University
- Bing-Yue Tsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240105834
- Publication date Mar 28, 2024
- Rohm Co., Ltd.
- Hajime OKUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MV DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240096989
- Publication date Mar 21, 2024
- Shanghai Huali Integrated Circuit Corporation
- Qiwei WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240096987
- Publication date Mar 21, 2024
- Vanguard International Semiconductor Corporation
- Syed-Sarwar Imam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN...
- Publication number 20240088254
- Publication date Mar 14, 2024
- Intel Corporation
- Aaron D. LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240072167
- Publication date Feb 29, 2024
- Kabushiki Kaisha Toshiba
- Kentaro Ichinoseki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET TRANSISTOR
- Publication number 20240063280
- Publication date Feb 22, 2024
- STMicroelectronics (Rousset) SAS
- Franck JULIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240063279
- Publication date Feb 22, 2024
- Samsung Electronics Co., Ltd.
- DOOSAN BACK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC RANDOM-ACCESS MEMORY CELL
- Publication number 20240064997
- Publication date Feb 22, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20240055498
- Publication date Feb 15, 2024
- mqSemi AG
- Munaf RAHIMO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240047534
- Publication date Feb 8, 2024
- Kabushiki Kaisha Toshiba
- Yosuke KAJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240047542
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- JHIH-BIN CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE HAVING A FIELD PLATE
- Publication number 20240047573
- Publication date Feb 8, 2024
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240038849
- Publication date Feb 1, 2024
- Kabushiki Kaisha Toshiba
- Yosuke KAJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240030304
- Publication date Jan 25, 2024
- Samsung Electronics Co., Ltd.
- Munhyeon KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
- Publication number 20240021693
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuei-Lun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240014317
- Publication date Jan 11, 2024
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING DEVICE
- Publication number 20230421073
- Publication date Dec 28, 2023
- Rohm Co., Ltd.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20230411478
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu KAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR
- Publication number 20230411508
- Publication date Dec 21, 2023
- ROHM CO., LTD.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH DUAL SHIELD STRUCTURE IN SILICON CA...
- Publication number 20230411511
- Publication date Dec 21, 2023
- TRinno Technology Co., Ltd.
- Kwang Hoon OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20230411514
- Publication date Dec 21, 2023
- Hitachi Energy Switzerland AG
- Gianpaolo ROMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Constructions and Methods of Programming Fi...
- Publication number 20230402082
- Publication date Dec 14, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230395713
- Publication date Dec 7, 2023
- Rohm Co., Ltd.
- Shuhei MITANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MULTIPLE WELLS
- Publication number 20230378296
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Chang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR
- Publication number 20230378295
- Publication date Nov 23, 2023
- STMicroelectronics (Crolles 2) SAS
- Siddhartha DHAR
- H01 - BASIC ELECTRIC ELEMENTS

the thickness being non-uniform

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Power MOSFETs structure

Method of forming a semiconductor device with a dual gate dielectri...

Semiconductor device and method for manufacturing the same

Imaging element, imaging device, and manufacturing apparatus and me...

Semiconductor device and method for fabricating the same

Semiconductor device structure with high voltage device

Method for fabricating hydrogen treated surface of semiconductor de...

Recessed access devices and methods of forming a recessed access de...

Fin field-effect transistor and method of forming the same

Semiconductor device

Integrated circuit devices including transistor stacks having diffe...

High voltage semiconductor device including a doped gate electrode

Lateral transistors and methods with low-voltage-drop shunt to body...

Semiconductor device

Power MOSFET with improved safe operating area

Vertical field effect transistor including integrated antifuse

Semiconductor device and method of manufacturing semiconductor device

High voltage metal-oxide-semiconductor (HVMOS) device integrated wi...

Gate-all-around integrated circuit structures having insulator FIN...

Semiconductor device and method of fabricating the same

Semiconductor device

Semiconductor device

Transistor device having a field plate in an elongate active trench

Semiconductor device

Semiconductor device having gate trench

Semiconductor device

Semiconductor device and method of fabricating the same

Thicker corner of a gate dielectric structure around a recessed gat...

Semiconductor devices having multi-channel active regions and metho...

Semiconductor device having an air gap and method for fabricating t...

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE AND METHODS FOR MANUFACTURING THE SAME

TRENCH SHIELDED TRANSISTOR

COMPOSITE GATE DIELECTRIC FOR HIGH-VOLTAGE DEVICE

TRANSISTORS DESIGNED WITH REDUCED LEAKAGE

GATE FABRICATION METHOD OF AN U-METAL-OXIDE-SEMICONDUCTOR FIELD-EFF...

SEMICONDUCTOR DEVICE

MV DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN...

SEMICONDUCTOR DEVICE

MOSFET TRANSISTOR

SEMICONDUCTOR DEVICE

FERROELECTRIC RANDOM-ACCESS MEMORY CELL

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

TRANSISTOR DEVICE HAVING A FIELD PLATE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

GATE STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME

SEMICONDUCTOR DEVICE

SWITCHING DEVICE

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR

POWER SEMICONDUCTOR DEVICE WITH DUAL SHIELD STRUCTURE IN SILICON CA...

POWER SEMICONDUCTOR DEVICE

Field Effect Transistor Constructions and Methods of Programming Fi...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING MULTIPLE WELLS

TRANSISTOR