the variation being parallel to the channel plane

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/512the variation being parallel to the channel plane

Industries

Patents Grantslast 30 patents

Information Patent Grant
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- Taiwan Semiconductor Manufacturing Company Ltd.
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
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- NANYA TECHNOLOGY CORPORATION
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
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- Micron Technology, Inc.
- Chris M Carlson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
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- Kabushiki Kaisha Toshiba
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- H01 - BASIC ELECTRIC ELEMENTS
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Information Patent Grant
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Information Patent Grant
FinFET device with partial interface dipole formation for reduction...
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Information Patent Grant
Non-volatile memory device
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Information Patent Grant
Methods of integrating multiple gate dielectric transistors on a tr...
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- Curtis Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contacts
- Patent number 11,600,524
- Issue date Mar 7, 2023
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
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- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yun-Chi Wu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Field-effect transistors with asymmetric gate stacks
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- Intel Corporation
- Said Rami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
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- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
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- Nuo Xu
- G11 - INFORMATION STORAGE
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- Xiaoliang Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with sidewall oxidized dielectric and method f...
- Patent number 11,302,827
- Issue date Apr 12, 2022
- NANYA TECHNOLOGY CORP.
- Te-Yin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,282,929
- Issue date Mar 22, 2022
- Kabushiki Kaisha Toshiba
- Yuhki Fujino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate process for FinFET device improvement
- Patent number 11,271,087
- Issue date Mar 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED CONTACTS
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- Mark T. BOHR
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MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR S...
- Publication number 20230361187
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- CHANGXIN MEMORY TECHNOLOGIES, INC
- Zhaohong LV
- H01 - BASIC ELECTRIC ELEMENTS
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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...
- Publication number 20230361182
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- Taiwan Semiconductor Manufacturing company Ltd.
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- G11 - INFORMATION STORAGE
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FINFET DEVICE WITH PARTIAL INTERFACE DIPOLE FORMATION FOR REDUCTION...
- Publication number 20230352590
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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
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- Dongsuk SHIN
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INTEGRATED PLANAR TRANSISTORS AND MEMORY CELL ARRAY ARCHITECTURES
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SELF-ALIGNED CONTACTS
- Publication number 20230154793
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- H01 - BASIC ELECTRIC ELEMENTS
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Recessed Access Devices And Methods Of Forming A Recessed Access De...
- Publication number 20230063549
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- Publication number 20230062092
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STRAINED GATE SEMICONDUCTOR DEVICE WITH DOPED INTERLAYER DIELECTRIC...
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SEMICONDUCTOR DEVICE
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- Kabushiki Kaisha Toshiba
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- H01 - BASIC ELECTRIC ELEMENTS

the variation being parallel to the channel plane

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Power MOSFETs structure

Method for fabricating semiconductor device with sidewall oxidized...

Void formation for charge trap structures

Method of manufacturing semiconductor device

Recessed access devices and methods of forming a recessed access de...

Self-aligned contacts

Vertical field effect transistor including integrated antifuse

Semiconductor structure and method for manufacturing same

Semiconductor device with profiled work-function metal gate electro...

Method of manufacturing semiconductor device and associated memory...

Semiconductor device with field plate electrode

Multilayer high-k gate dielectric for a high performance logic tran...

FinFET device with partial interface dipole formation for reduction...

Memory transistor with multiple charge storing layers and a high wo...

Semiconductor device

Non-volatile memory device

Methods of integrating multiple gate dielectric transistors on a tr...

Self-aligned contacts

Method of manufacturing a semiconductor device and a semiconductor...

Field-effect transistors with asymmetric gate stacks

Memory transistor with multiple charge storing layers and a high wo...

Electronic device including a high electron mobility transistor inc...

Method of manufacturing high electron mobility transistor and high...

Programmable charge-storage transistor, an array of elevationally-e...

Ferroelectric memory device

Method of manufacturing semiconductor device and associated memory...

Nonvolatile memory device having a memory-transistor gate-electrode...

Semiconductor device with sidewall oxidized dielectric and method f...

Semiconductor device

Metal gate process for FinFET device improvement

Patents Applicationslast 30 patents

SELF-ALIGNED CONTACTS

SEMICONDUCTOR DEVICE WITH PROFILED WORK-FUNCTION METAL GATE ELECTRO...

MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR S...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...

FINFET DEVICE WITH PARTIAL INTERFACE DIPOLE FORMATION FOR REDUCTION...

NON-VOLATILE MEMORY DEVICE

SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

INTEGRATED PLANAR TRANSISTORS AND MEMORY CELL ARRAY ARCHITECTURES

SELF-ALIGNED CONTACTS

Recessed Access Devices And Methods Of Forming A Recessed Access De...

Recessed Access Devices And Methods Of Forming A Recessed Access De...

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...

STRAINED GATE SEMICONDUCTOR DEVICE WITH DOPED INTERLAYER DIELECTRIC...

SEMICONDUCTOR DEVICE

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH SIDEWALL OXIDIZED...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

NON-VOLATILE MEMORY DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...

SEMICONDUCTOR DEVICE

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

VERTICAL FIELD EFFECT TRANSISTOR INCLUDING INTEGRATED ANTIFUSE

POWER MOSFETS STRUCTURE

SEMICONDUCTOR DEVICE WITH PROFILED WORK-FUNCTION METAL GATE ELECTRO...

SEMICONDUCTOR DEVICE

METAL-OXIDE SEMICONDUCTOR FOR FIELD-EFFECT TRANSISTOR HAVING ENHANC...

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

SEMICONDUCTOR DEVICE