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the via being formed by burying a sacrificial pillar in the dielectric and removing the pillar
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the via being formed by burying a sacrificial pillar in the dielectric and removing the pillar
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11,984,359
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May 14, 2024
Taiwan Semiconductor Manufacturing Company Limited
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11,955,376
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Apr 9, 2024
Taiwan Semiconductor Manufacturing Company, Ltd
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11,817,351
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Nov 14, 2023
SK hynix Inc.
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11,646,222
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May 9, 2023
International Business Machines Corporation
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11,437,273
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Micromaterials LLC
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11,437,274
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Sep 6, 2022
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11,387,141
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Jul 12, 2022
International Business Machines Corporation
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11,264,277
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Mar 1, 2022
Taiwan Semiconductor Manufacturing Company Limited
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11,177,434
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Nov 16, 2021
Taiwan Semiconductor Manufacturing Company, Ltd
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Etch damage and ESL free dual damascene metal interconnect
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11,171,041
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Nov 9, 2021
Taiwan Semiconductor Manufacturing Company, Ltd
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11,121,033
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Sep 14, 2021
SK hynix Inc.
Ki-Hong Yang
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11,075,112
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Jul 27, 2021
Taiwan Semiconductor Manufacturing Co., Ltd
Che-Cheng Chang
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10,916,499
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Feb 9, 2021
Intel Corporation
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10,770,655
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Sep 8, 2020
Taiwan Semiconductor Manufacturing Co., Ltd
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Curtain airbag device mounting structure and curtain airbag deploym...
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10,723,306
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Jul 28, 2020
Toyota Jidosha Kabushiki Kaisha
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Methods of producing self-aligned vias
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10,600,688
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Mar 24, 2020
Micromaterials LLC
Ying Zhang
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10,573,555
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Feb 25, 2020
Micromaterials LLC
Ying Zhang
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Multifunction single via patterning
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10,559,493
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Feb 11, 2020
International Business Machines Corporation
Effendi Leobandung
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10,510,602
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Dec 17, 2019
Mirocmaterials LLC
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10,431,738
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Oct 1, 2019
Taiwan Semiconductor Manufacturing Co., Ltd
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Etch damage and ESL free dual damascene metal interconnect
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10,312,136
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Jun 4, 2019
Taiwan Semiconductor Manufacturing Co., Ltd.
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10,304,725
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May 28, 2019
Tokyo Electron Limited
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10,068,796
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Sep 4, 2018
TOSHIBA MEMORY CORPORATION
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Etch damage and ESL free dual damascene metal interconnect
Patent number
9,786,549
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Oct 10, 2017
Taiwan Semiconductor Manufacturing Co., Ltd.
Sunil Kumar Singh
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9,779,984
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Oct 3, 2017
Taiwan Semiconductor Manufacturing Co., Ltd.
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Multi-layer structure for high aspect ratio etch
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9,647,022
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May 9, 2017
Taiwan Semiconductor Manufacturing Co., Ltd.
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9,520,350
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Dec 13, 2016
Intel Corporation
Weng Hong Teh
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Metallization method for semiconductor structures
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9,437,488
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Sep 6, 2016
Imec VZW
Boon Teik Chan
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Self-aligned fine pitch permanent on-chip interconnect structures a...
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9,209,126
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GLOBALFOUNDRIES Inc.
Qinghuang Lin
H01 - BASIC ELECTRIC ELEMENTS
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Publication date
Nov 14, 2024
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Publication date
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H01 - BASIC ELECTRIC ELEMENTS
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Publication date
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20220059404
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Feb 24, 2022
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H01 - BASIC ELECTRIC ELEMENTS
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20210375678
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Dec 2, 2021
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20210351065
Publication date
Nov 11, 2021
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H01 - BASIC ELECTRIC ELEMENTS
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H01 - BASIC ELECTRIC ELEMENTS
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Publication date
Mar 25, 2021
Micromaterials LLC.
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H01 - BASIC ELECTRIC ELEMENTS
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Publication date
Nov 26, 2020
Taiwan Semiconductor Manufacturing Co., Ltd.
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H01 - BASIC ELECTRIC ELEMENTS
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Publication number
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Publication date
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International Business Machines Corporation
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Dec 5, 2019
Taiwan Semiconductor Manufacturing Co., Ltd.
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20190355621
Publication date
Nov 21, 2019
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Taiwan Semiconductor Manufacturing Co., LTD
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Mar 29, 2018
Toshiba Memory Corporation
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Mar 1, 2018
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Taiwan Semiconductor Manufacturing Co., LTD
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Publication date
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Taiwan Semiconductor Manufacturing Co., LTD
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Taiwan Semiconductor Manufacturing Co., LTD
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