Thermal insulation means

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CPC
H01L45/1293

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

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H01L45/1293Thermal insulation means

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method to effectively suppress heat dissipation in PCRAM devices
- Patent number 11,588,106
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory with embedded metal oxide fin for gradual switching
- Patent number 11,557,724
- Issue date Jan 17, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory with optimized resistive layers
- Patent number 11,380,732
- Issue date Jul 5, 2022
- Micron Technology, Inc.
- Lei Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell comprising a phase-change material
- Patent number 11,329,225
- Issue date May 10, 2022
- STMicroelectronics (Crolles 2) SAS
- Olivier Hinsinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching element, variable resistance memory device, and method of...
- Patent number 11,245,073
- Issue date Feb 8, 2022
- Samsung Electronics Co., Ltd.
- Seung-Geun Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,201,192
- Issue date Dec 14, 2021
- Samsung Electronics Co., Ltd.
- Ji-hyun Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device having a plurality of memory cells each...
- Patent number 11,201,191
- Issue date Dec 14, 2021
- TOSHIBA MEMORY CORPORATION
- Atsushi Kawasumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,183,538
- Issue date Nov 23, 2021
- Samsung Electronics Co., Ltd.
- Ji-hyun Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory with embedded metal oxide fin for gradual switching
- Patent number 11,177,436
- Issue date Nov 16, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selection device and storage apparatus
- Patent number 11,152,428
- Issue date Oct 19, 2021
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Minoru Ikarashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance crosspoint architecture
- Patent number 11,121,317
- Issue date Sep 14, 2021
- Micron Technology, Inc.
- Rajasekhar Venigalla
- G11 - INFORMATION STORAGE
Information Patent Grant
Confined phase change memory with double air gap
- Patent number 11,063,216
- Issue date Jul 13, 2021
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change material (PCM) radio frequency (RF) switch using a che...
- Patent number 10,944,052
- Issue date Mar 9, 2021
- Newport Fab, LLC
- Gregory P. Slovin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory
- Patent number 10,903,423
- Issue date Jan 26, 2021
- STMicroelectronics (Crolles 2) SAS
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of confined phase change memory with threshold switchin...
- Patent number 10,892,413
- Issue date Jan 12, 2021
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory structure to reduce power consumption
- Patent number 10,879,463
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi Jen Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Providing thermal shield to RRAM cells
- Patent number 10,873,024
- Issue date Dec 22, 2020
- Minxian Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to effectively suppress heat dissipation in PCRAM devices
- Patent number 10,862,031
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal insulation for three-dimensional memory arrays
- Patent number 10,847,580
- Issue date Nov 24, 2020
- Micron Technology, Inc.
- Paolo Fantini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Airgap isolation for backend embedded memory stack pillar arrays
- Patent number 10,832,941
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing phase-change material (PCM) radio frequency...
- Patent number 10,833,259
- Issue date Nov 10, 2020
- Newport Fab, LLC
- Gregory P. Slovin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Storage device
- Patent number 10,833,265
- Issue date Nov 10, 2020
- TOSHIBA MEMORY CORPORATION
- Daisuke Ikeno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D phase change memory
- Patent number 10,833,269
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell comprising a phase-change material
- Patent number 10,797,234
- Issue date Oct 6, 2020
- STMicroelectronics (Crolles 2) SAS
- Olivier Hinsinger
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory with doped silicon germanium alloy-containing e...
- Patent number 10,714,684
- Issue date Jul 14, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM cell structure with laterally offset BEVA/TEVA
- Patent number 10,700,275
- Issue date Jun 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar single-crystal phase change material device
- Patent number 10,700,274
- Issue date Jun 30, 2020
- International Business Machines Corporation
- Guy Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor device including RF isolation regions unde...
- Patent number 10,680,174
- Issue date Jun 9, 2020
- Newport Fab, LLC
- David J. Howard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 10,680,037
- Issue date Jun 9, 2020
- Micron Technology, Inc.
- Paolo Fantini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal insulation for three-dimensional memory arrays
- Patent number 10,672,835
- Issue date Jun 2, 2020
- Micron Technology, Inc.
- Paolo Fantini
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL PHASE CHANGE SWITCH DEVICES AND METHODS
- Publication number 20230422644
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOME-SHAPED PHASE CHANGE MEMORY MUSHROOM CELL
- Publication number 20230413694
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL WITH DOUBLE ACTIVE VOLUME
- Publication number 20230284541
- Publication date Sep 7, 2023
- International Business Machines Corporation
- Timothy Mathew Philip
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY STRUCTURE AND MANUFACTURING METHOD FOR THE SAME
- Publication number 20230284463
- Publication date Sep 7, 2023
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE STRUCTURE FOR REDUCING THERMAL CROSSTALK
- Publication number 20230270024
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ching Ju Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY PROGRAMMING CURRENT LEAKAGE REDUCTION
- Publication number 20230180639
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER TO MITIGATE DIRECT-SHORTAGE LEAKAGE IN CONDUCTIVE...
- Publication number 20230134560
- Publication date May 4, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Wen Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY HAVING GRADUAL RESET
- Publication number 20230123642
- Publication date Apr 20, 2023
- International Business Machines Corporation
- Ning Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL HAVING PILLAR BOTTOM ELECTRODE WITH IMPROV...
- Publication number 20230122498
- Publication date Apr 20, 2023
- International Business Machines Corporation
- JUNTAO LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE BASED ON NANO CURRENT CHANNEL
- Publication number 20230099931
- Publication date Mar 30, 2023
- HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Xiaomin CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL WITH SUPERLATTICE BASED THERMAL BARRIER
- Publication number 20230077912
- Publication date Mar 16, 2023
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY WITH LAMINATED CELL
- Publication number 20220407000
- Publication date Dec 22, 2022
- Macronix International Co., Ltd.
- Chih-Hsiang YANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MEMORY WITH OPTIMIZED RESISTIVE LAYERS
- Publication number 20220406847
- Publication date Dec 22, 2022
- Micron Technology, Inc.
- Lei Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHODS OF M...
- Publication number 20220344582
- Publication date Oct 27, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE TERMINAL NEUROMORPHIC SYNAPTIC DEVICE AND METHOD FOR MANUFACT...
- Publication number 20220285615
- Publication date Sep 8, 2022
- Kyungpook National University Industry-Academic Cooperation Foundation
- Jiyong Woo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PHASE CHANGE MEMORY AND METHOD FOR MAKING THE SAME
- Publication number 20220231224
- Publication date Jul 21, 2022
- SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY...
- ZHITANG SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE CROSSPOINT ARCHITECTURE
- Publication number 20220069216
- Publication date Mar 3, 2022
- Micron Technology, Inc.
- Rajasekhar Venigalla
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH OPTIMIZED RESISTIVE LAYERS
- Publication number 20220037403
- Publication date Feb 3, 2022
- Micron Technology, Inc.
- Lei Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY WITH EMBEDDED METAL OXIDE FIN FOR GRADUAL SWITCHING
- Publication number 20220006009
- Publication date Jan 6, 2022
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATION OF PHASE-CHANGE MEMORY CELLS
- Publication number 20210408374
- Publication date Dec 30, 2021
- STMicroelectronics (Rousset) SAS
- Philippe BOIVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Switch Device and Method for Manufacturing a Switch Device
- Publication number 20210376234
- Publication date Dec 2, 2021
- Dominik Heiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase Change Memory Having Gradual Reset
- Publication number 20210288250
- Publication date Sep 16, 2021
- International Business Machines Corporation
- Ning Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE CROSSPOINT ARCHITECTURE
- Publication number 20210151675
- Publication date May 20, 2021
- Micron Technology, Inc.
- Rajasekhar Venigalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL METHOD TO EFFECTIVELY SUPPRESS HEAT DISSIPATION IN PCRAM DEVICES
- Publication number 20210066590
- Publication date Mar 4, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Yu Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210013263
- Publication date Jan 14, 2021
- Samsung Electronics Co., Ltd.
- Ji-hyun JEONG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL COMPRISING A PHASE-CHANGE MATERIAL
- Publication number 20200403154
- Publication date Dec 24, 2020
- STMicroelectronics (Crolles 2) SAS
- Olivier HINSINGER
- G11 - INFORMATION STORAGE
Information Patent Application
SWITCHING ELEMENT, VARIABLE RESISTANCE MEMORY DEVICE, AND METHOD OF...
- Publication number 20200365801
- Publication date Nov 19, 2020
- Samsung Electronics Co., Ltd.
- SEUNG-GEUN YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D PHASE CHANGE MEMORY
- Publication number 20200357994
- Publication date Nov 12, 2020
- International Business Machines Corporation
- Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROVIDING THERMAL SHIELD TO RRAM CELLS
- Publication number 20200343447
- Publication date Oct 29, 2020
- Tetramem Inc.
- Minxian Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY WITH EMBEDDED METAL OXIDE FIN FOR GRADUAL SWITCHING
- Publication number 20200343448
- Publication date Oct 29, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS

Thermal insulation means

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method to effectively suppress heat dissipation in PCRAM devices

Resistive memory with embedded metal oxide fin for gradual switching

Memory with optimized resistive layers

Memory cell comprising a phase-change material

Switching element, variable resistance memory device, and method of...

Memory device and method of manufacturing the same

Semiconductor memory device having a plurality of memory cells each...

Memory device and method of manufacturing the same

Resistive memory with embedded metal oxide fin for gradual switching

Selection device and storage apparatus

Low resistance crosspoint architecture

Confined phase change memory with double air gap

Phase-change material (PCM) radio frequency (RF) switch using a che...

Phase change memory

Integration of confined phase change memory with threshold switchin...

Phase change memory structure to reduce power consumption

Providing thermal shield to RRAM cells

Method to effectively suppress heat dissipation in PCRAM devices

Thermal insulation for three-dimensional memory arrays

Airgap isolation for backend embedded memory stack pillar arrays

Method of manufacturing phase-change material (PCM) radio frequency...

Storage device

3D phase change memory

Memory cell comprising a phase-change material

Phase change memory with doped silicon germanium alloy-containing e...

RRAM cell structure with laterally offset BEVA/TEVA

Planar single-crystal phase change material device

Integrated semiconductor device including RF isolation regions unde...

Cross-point memory and methods for fabrication of same

Thermal insulation for three-dimensional memory arrays

Patents Applicationslast 30 patents

VERTICAL PHASE CHANGE SWITCH DEVICES AND METHODS

DOME-SHAPED PHASE CHANGE MEMORY MUSHROOM CELL

PHASE CHANGE MEMORY CELL WITH DOUBLE ACTIVE VOLUME

MEMORY STRUCTURE AND MANUFACTURING METHOD FOR THE SAME

MEMORY DEVICE STRUCTURE FOR REDUCING THERMAL CROSSTALK

PHASE CHANGE MEMORY PROGRAMMING CURRENT LEAKAGE REDUCTION

DIFFUSION BARRIER TO MITIGATE DIRECT-SHORTAGE LEAKAGE IN CONDUCTIVE...

PHASE CHANGE MEMORY HAVING GRADUAL RESET

PHASE CHANGE MEMORY CELL HAVING PILLAR BOTTOM ELECTRODE WITH IMPROV...

PHASE CHANGE MEMORY DEVICE BASED ON NANO CURRENT CHANNEL

PHASE CHANGE MEMORY CELL WITH SUPERLATTICE BASED THERMAL BARRIER

MEMORY WITH LAMINATED CELL

MEMORY WITH OPTIMIZED RESISTIVE LAYERS

MEMORY CELL, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHODS OF M...

THREE TERMINAL NEUROMORPHIC SYNAPTIC DEVICE AND METHOD FOR MANUFACT...

PHASE CHANGE MEMORY AND METHOD FOR MAKING THE SAME

LOW RESISTANCE CROSSPOINT ARCHITECTURE

MEMORY WITH OPTIMIZED RESISTIVE LAYERS

RESISTIVE MEMORY WITH EMBEDDED METAL OXIDE FIN FOR GRADUAL SWITCHING

INSULATION OF PHASE-CHANGE MEMORY CELLS

Switch Device and Method for Manufacturing a Switch Device

Phase Change Memory Having Gradual Reset

LOW RESISTANCE CROSSPOINT ARCHITECTURE

NOVEL METHOD TO EFFECTIVELY SUPPRESS HEAT DISSIPATION IN PCRAM DEVICES

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

MEMORY CELL COMPRISING A PHASE-CHANGE MATERIAL

SWITCHING ELEMENT, VARIABLE RESISTANCE MEMORY DEVICE, AND METHOD OF...

3D PHASE CHANGE MEMORY

PROVIDING THERMAL SHIELD TO RRAM CELLS

RESISTIVE MEMORY WITH EMBEDDED METAL OXIDE FIN FOR GRADUAL SWITCHING