Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering

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H01L21/3225

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/3225Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering

Industries

Patents Grantslast 30 patents

Information Patent Grant
Silicon wafer and manufacturing method of the same
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- Issue date Jul 4, 2023
- Sumco Corporation
- Kazuhisa Torigoe
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Information Patent Grant
Methods for growing a nitrogen doped single crystal silicon ingot u...
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- Issue date May 2, 2023
- Siltronic AG
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- C30 - CRYSTAL GROWTH
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- Samsung Electronics Co., Ltd.
- Jung-A Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer made of single-crystal silicon and process for...
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- Issue date Mar 22, 2022
- Siltronic AG
- Timo Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
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- Patent number 11,121,003
- Issue date Sep 14, 2021
- Sumco Corporation
- Kazuhisa Torigoe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for growing a nitrogen doped single crystal silicon ingot u...
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- Issue date Sep 7, 2021
- GlobalWafers Co., Ltd.
- Carissima Marie Hudson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
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- Issue date Aug 24, 2021
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- Katsumi Nakamura
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Information Patent Grant
Silicon wafer
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- Issue date Aug 17, 2021
- Sumco Corporation
- Toshiaki Ono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
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- Issue date Aug 17, 2021
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer composed of single-crystal silicon with high ga...
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- Issue date Mar 30, 2021
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Semiconductor devices with superjunction structures
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Information Patent Grant
Photoelectric conversion device and manufacturing method and appara...
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- Kabushiki Kaisha Toshiba
- Shigehiko Mori
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Information Patent Grant
External gettering method and device
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- Micron Technology, Inc.
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Information Patent Grant
Epitaxial silicon wafer
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- Issue date Dec 8, 2020
- Sumco Corporation
- Kazuhisa Torigoe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of evaluating impurity gettering capability of epitaxial sil...
- Patent number 10,861,709
- Issue date Dec 8, 2020
- Sumco Corporation
- Satoshi Shigematsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 10,840,361
- Issue date Nov 17, 2020
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of treating silicon wafers to have intrinsic gettering and g...
- Patent number 10,707,093
- Issue date Jul 7, 2020
- Sunedison Semiconductor Limited (UEN201334164H)
- Young Jung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor devices with superjunction s...
- Patent number 10,658,497
- Issue date May 19, 2020
- Infineon Technologies Austria AG
- Daniel Hölzl
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer
- Patent number 10,648,101
- Issue date May 12, 2020
- Globalwafers Japan Co., Ltd
- Susumu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer and method for manufacturing same
- Patent number 10,526,728
- Issue date Jan 7, 2020
- Sumco Corporation
- Satoshi Kudo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gettering layer formation and substrate
- Patent number 10,522,367
- Issue date Dec 31, 2019
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
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Semiconductor device and semiconductor device manufacturing method
- Patent number 10,490,646
- Issue date Nov 26, 2019
- Fuji Electric Co., Ltd.
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxially coated semiconductor wafer, and method for producing an...
- Patent number 10,483,128
- Issue date Nov 19, 2019
- Siltronic AG
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Information Patent Grant
Method of treating silicon wafers to have intrinsic gettering and g...
- Patent number 10,453,703
- Issue date Oct 22, 2019
- Sunedison Semiconductor Limited (UEN201334164H)
- Young Jung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
External gettering method and device
- Patent number 10,453,761
- Issue date Oct 22, 2019
- Micron Technology, Inc.
- Michael Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a superlattice as a gettering layer
- Patent number 10,410,880
- Issue date Sep 10, 2019
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device including a superlattice a...
- Patent number 10,381,242
- Issue date Aug 13, 2019
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon epitaxial wafer and method of producing silicon epitaxial w...
- Patent number 10,355,092
- Issue date Jul 16, 2019
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon wafer
- Patent number 10,297,463
- Issue date May 21, 2019
- Shin-Etsu Handotai Co., Ltd.
- Katsuyoshi Suzuki
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

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- Semiconductor Components Industries, LLC
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- C30 - CRYSTAL GROWTH
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SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE
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- Publication date Oct 19, 2023
- Mitsubishi Electric Corporation
- Akira KIYOI
- H01 - BASIC ELECTRIC ELEMENTS
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SILICON WAFER AND MANUFACTURING METHOD OF THE SAME
- Publication number 20230307505
- Publication date Sep 28, 2023
- SUMCO CORPORATION
- Kazuhisa TORIGOE
- C30 - CRYSTAL GROWTH
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SILICON WAFER AND METHOD FOR PRODUCING SILICON WAFER
- Publication number 20230243062
- Publication date Aug 3, 2023
- GLOBALWAFERS JAPAN CO., LTD.
- Haruo SUDO
- C30 - CRYSTAL GROWTH
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SEMICONDUCTOR WAFER MADE OF SINGLE-CRYSTAL SILICON AND PROCESS FOR...
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- Publication date Jul 27, 2023
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- Andreas SATTLER
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20230187221
- Publication date Jun 15, 2023
- Fuji Electric Co., Ltd.
- Takane YAMADA
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20230043434
- Publication date Feb 9, 2023
- Fuji Electric Co., Ltd.
- Masayuki MOMOSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING EPITAXIAL WAFER AND EPITAXIAL WAFER
- Publication number 20230028127
- Publication date Jan 26, 2023
- Shin-Etsu Handotai Co., Ltd.
- Katsuyoshi SUZUKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALL...
- Publication number 20220349089
- Publication date Nov 3, 2022
- Siltronic AG
- Timo Mueller
- C30 - CRYSTAL GROWTH
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METHOD FOR MAKING A SEMICONDUCTOR DEVICE USING SUPERLATTICES WITH D...
- Publication number 20220005706
- Publication date Jan 6, 2022
- ATOMERA INCORPORATED
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- H01 - BASIC ELECTRIC ELEMENTS
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METHODS FOR GROWING A NITROGEN DOPED SINGLE CRYSTAL SILICON INGOT U...
- Publication number 20210363658
- Publication date Nov 25, 2021
- GLOBALWAFERS CO., LTD.
- Carissima Marie Hudson
- H01 - BASIC ELECTRIC ELEMENTS
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METHODS FOR GROWING A NITROGEN DOPED SINGLE CRYSTAL SILICON INGOT U...
- Publication number 20210079554
- Publication date Mar 18, 2021
- GLOBALWAFERS CO., LTD.
- Carissima Marie Hudson
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20200373418
- Publication date Nov 26, 2020
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON
- Publication number 20200248333
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- Siltronic AG
- Timo Mueller
- H01 - BASIC ELECTRIC ELEMENTS
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Semiconductor Devices with Superjunction Structures
- Publication number 20200251580
- Publication date Aug 6, 2020
- Infineon Technologies Austria AG
- Daniel Hölzl
- H01 - BASIC ELECTRIC ELEMENTS
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- Publication date Jul 30, 2020
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- Jung-A LEE
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EPITAXIAL SILICON WAFER
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SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AS A GETTERING LAYER
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- ATOMERA INCORPORATED
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- H01 - BASIC ELECTRIC ELEMENTS

Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silicon wafer and manufacturing method of the same

Methods for growing a nitrogen doped single crystal silicon ingot u...

Method for producing a semiconductor wafer composed of monocrystall...

Epitaxial wafer including boron and germanium and method of fabrica...

Semiconductor wafer made of single-crystal silicon and process for...

Method of predicting thermal donor formation behavior in silicon wa...

Methods for growing a nitrogen doped single crystal silicon ingot u...

Semiconductor device and manufacturing method thereof

Silicon wafer

Semiconductor device and manufacturing method of semiconductor device

Semiconductor wafer composed of single-crystal silicon with high ga...

Semiconductor devices with superjunction structures

Photoelectric conversion device and manufacturing method and appara...

External gettering method and device

Epitaxial silicon wafer

Method of evaluating impurity gettering capability of epitaxial sil...

Semiconductor device and manufacturing method of semiconductor device

Method of treating silicon wafers to have intrinsic gettering and g...

Method for manufacturing semiconductor devices with superjunction s...

Silicon wafer

Silicon wafer and method for manufacturing same

Gettering layer formation and substrate

Semiconductor device and semiconductor device manufacturing method

Epitaxially coated semiconductor wafer, and method for producing an...

Method of treating silicon wafers to have intrinsic gettering and g...

External gettering method and device

Semiconductor device including a superlattice as a gettering layer

Method for making a semiconductor device including a superlattice a...

Silicon epitaxial wafer and method of producing silicon epitaxial w...

Method for manufacturing silicon wafer

Patents Applicationslast 30 patents

SUPPORT SUBSTRATE MADE OF SILICON SUITABLE FOR RADIOFREQUENCY APPLI...

METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE

SILICON WAFER AND MANUFACTURING METHOD OF THE SAME

SILICON WAFER AND METHOD FOR PRODUCING SILICON WAFER

SEMICONDUCTOR WAFER MADE OF SINGLE-CRYSTAL SILICON AND PROCESS FOR...

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

METHOD FOR MANUFACTURING EPITAXIAL WAFER AND EPITAXIAL WAFER

METHOD FOR PRODUCING A SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALL...

METHOD FOR MAKING A SEMICONDUCTOR DEVICE USING SUPERLATTICES WITH D...

METHODS FOR GROWING A NITROGEN DOPED SINGLE CRYSTAL SILICON INGOT U...

METHODS FOR GROWING A NITROGEN DOPED SINGLE CRYSTAL SILICON INGOT U...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON

Semiconductor Devices with Superjunction Structures

SEMICONDUCTOR WAFER COMPOSED OF SINGLE-CRYSTAL SILICON AND PROCESS...

EPITAXIAL WAFER AND METHOD OF FABRICATING THE SAME

METHOD OF EVALUATING IMPURITY GETTERING CAPABILITY OF EPITAXIAL SIL...

SEMICONDUCTOR WAFER MADE OF SINGLE-CRYSTAL SILICON AND PROCESS FOR...

METHOD OF PREDICTING THERMAL DONOR FORMATION BEHAVIOR IN SILICON WA...

SILICON WAFER

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

EPITAXIAL SILICON WAFER

EXTERNAL GETTERING METHOD AND DEVICE

METHOD OF TREATING SILICON WAFERS TO HAVE INTRINSIC GETTERING AND G...

SILICON WAFER

FZ SILICON AND METHOD TO PREPARE FZ SILICON

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AS A GETTERING LAYER