Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering

Industry

CPC
H01L21/3225

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/3225Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering

Industries

Patents Grantslast 30 patents

Information Patent Grant
Silicon wafer and manufacturing method of the same
- Patent number 12,142,645
- Issue date Nov 12, 2024
- Sumco Corporation
- Kazuhisa Torigoe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and manufacturing method of the same
- Patent number 11,695,048
- Issue date Jul 4, 2023
- Sumco Corporation
- Kazuhisa Torigoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for growing a nitrogen doped single crystal silicon ingot u...
- Patent number 11,680,336
- Issue date Jun 20, 2023
- GlobalWafers Co., Ltd.
- Carissima Marie Hudson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor wafer composed of monocrystall...
- Patent number 11,639,558
- Issue date May 2, 2023
- Siltronic AG
- Timo Mueller
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial wafer including boron and germanium and method of fabrica...
- Patent number 11,289,334
- Issue date Mar 29, 2022
- Samsung Electronics Co., Ltd.
- Jung-A Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer made of single-crystal silicon and process for...
- Patent number 11,280,026
- Issue date Mar 22, 2022
- Siltronic AG
- Timo Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of predicting thermal donor formation behavior in silicon wa...
- Patent number 11,121,003
- Issue date Sep 14, 2021
- Sumco Corporation
- Kazuhisa Torigoe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for growing a nitrogen doped single crystal silicon ingot u...
- Patent number 11,111,597
- Issue date Sep 7, 2021
- GlobalWafers Co., Ltd.
- Carissima Marie Hudson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,101,133
- Issue date Aug 24, 2021
- Mitsubishi Electric Corporation
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer
- Patent number 11,094,557
- Issue date Aug 17, 2021
- Sumco Corporation
- Toshiaki Ono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 11,094,810
- Issue date Aug 17, 2021
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer composed of single-crystal silicon with high ga...
- Patent number 10,961,640
- Issue date Mar 30, 2021
- Siltronic AG
- Timo Mueller
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor devices with superjunction structures
- Patent number 10,957,788
- Issue date Mar 23, 2021
- Infineon Technologies Austria AG
- Daniel Hölzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photoelectric conversion device and manufacturing method and appara...
- Patent number 10,950,391
- Issue date Mar 16, 2021
- Kabushiki Kaisha Toshiba
- Shigehiko Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
External gettering method and device
- Patent number 10,892,202
- Issue date Jan 12, 2021
- Micron Technology, Inc.
- Michael Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial silicon wafer
- Patent number 10,861,990
- Issue date Dec 8, 2020
- Sumco Corporation
- Kazuhisa Torigoe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of evaluating impurity gettering capability of epitaxial sil...
- Patent number 10,861,709
- Issue date Dec 8, 2020
- Sumco Corporation
- Satoshi Shigematsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 10,840,361
- Issue date Nov 17, 2020
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of treating silicon wafers to have intrinsic gettering and g...
- Patent number 10,707,093
- Issue date Jul 7, 2020
- Sunedison Semiconductor Limited (UEN201334164H)
- Young Jung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor devices with superjunction s...
- Patent number 10,658,497
- Issue date May 19, 2020
- Infineon Technologies Austria AG
- Daniel Hölzl
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer
- Patent number 10,648,101
- Issue date May 12, 2020
- Globalwafers Japan Co., Ltd
- Susumu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer and method for manufacturing same
- Patent number 10,526,728
- Issue date Jan 7, 2020
- Sumco Corporation
- Satoshi Kudo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gettering layer formation and substrate
- Patent number 10,522,367
- Issue date Dec 31, 2019
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor device manufacturing method
- Patent number 10,490,646
- Issue date Nov 26, 2019
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxially coated semiconductor wafer, and method for producing an...
- Patent number 10,483,128
- Issue date Nov 19, 2019
- Siltronic AG
- Timo Mueller
- B08 - CLEANING
Information Patent Grant
Method of treating silicon wafers to have intrinsic gettering and g...
- Patent number 10,453,703
- Issue date Oct 22, 2019
- Sunedison Semiconductor Limited (UEN201334164H)
- Young Jung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
External gettering method and device
- Patent number 10,453,761
- Issue date Oct 22, 2019
- Micron Technology, Inc.
- Michael Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a superlattice as a gettering layer
- Patent number 10,410,880
- Issue date Sep 10, 2019
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device including a superlattice a...
- Patent number 10,381,242
- Issue date Aug 13, 2019
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon epitaxial wafer and method of producing silicon epitaxial w...
- Patent number 10,355,092
- Issue date Jul 16, 2019
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240222125
- Publication date Jul 4, 2024
- Resonac Corporation
- Yoshikazu Umeta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPORT SUBSTRATE MADE OF SILICON SUITABLE FOR RADIOFREQUENCY APPLI...
- Publication number 20240071755
- Publication date Feb 29, 2024
- SOITEC
- Oleg Kononchuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES SEMICONDUCTOR DEVICES
- Publication number 20240071775
- Publication date Feb 29, 2024
- Semiconductor Components Industries, LLC
- David LYSACEK
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE
- Publication number 20230335410
- Publication date Oct 19, 2023
- Mitsubishi Electric Corporation
- Akira KIYOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON WAFER AND MANUFACTURING METHOD OF THE SAME
- Publication number 20230307505
- Publication date Sep 28, 2023
- SUMCO CORPORATION
- Kazuhisa TORIGOE
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER AND METHOD FOR PRODUCING SILICON WAFER
- Publication number 20230243062
- Publication date Aug 3, 2023
- GLOBALWAFERS JAPAN CO., LTD.
- Haruo SUDO
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR WAFER MADE OF SINGLE-CRYSTAL SILICON AND PROCESS FOR...
- Publication number 20230235479
- Publication date Jul 27, 2023
- Siltronic AG
- Andreas SATTLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20230187221
- Publication date Jun 15, 2023
- Fuji Electric Co., Ltd.
- Takane YAMADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20230043434
- Publication date Feb 9, 2023
- Fuji Electric Co., Ltd.
- Masayuki MOMOSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING EPITAXIAL WAFER AND EPITAXIAL WAFER
- Publication number 20230028127
- Publication date Jan 26, 2023
- Shin-Etsu Handotai Co., Ltd.
- Katsuyoshi SUZUKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALL...
- Publication number 20220349089
- Publication date Nov 3, 2022
- Siltronic AG
- Timo Mueller
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MAKING A SEMICONDUCTOR DEVICE USING SUPERLATTICES WITH D...
- Publication number 20220005706
- Publication date Jan 6, 2022
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR GROWING A NITROGEN DOPED SINGLE CRYSTAL SILICON INGOT U...
- Publication number 20210363658
- Publication date Nov 25, 2021
- GLOBALWAFERS CO., LTD.
- Carissima Marie Hudson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR GROWING A NITROGEN DOPED SINGLE CRYSTAL SILICON INGOT U...
- Publication number 20210079554
- Publication date Mar 18, 2021
- GLOBALWAFERS CO., LTD.
- Carissima Marie Hudson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20200373418
- Publication date Nov 26, 2020
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices with Superjunction Structures
- Publication number 20200251580
- Publication date Aug 6, 2020
- Infineon Technologies Austria AG
- Daniel Hölzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON
- Publication number 20200248333
- Publication date Aug 6, 2020
- Siltronic AG
- Timo Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER COMPOSED OF SINGLE-CRYSTAL SILICON AND PROCESS...
- Publication number 20200240039
- Publication date Jul 30, 2020
- Siltronic AG
- Timo MUELLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER AND METHOD OF FABRICATING THE SAME
- Publication number 20200243338
- Publication date Jul 30, 2020
- Samsung Electronics Co., Ltd.
- Jung-A LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF EVALUATING IMPURITY GETTERING CAPABILITY OF EPITAXIAL SIL...
- Publication number 20200203178
- Publication date Jun 25, 2020
- SUMCO CORPORATION
- Satoshi SHIGEMATSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER MADE OF SINGLE-CRYSTAL SILICON AND PROCESS FOR...
- Publication number 20200165745
- Publication date May 28, 2020
- Siltronic AG
- Timo MUELLER
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PREDICTING THERMAL DONOR FORMATION BEHAVIOR IN SILICON WA...
- Publication number 20200105542
- Publication date Apr 2, 2020
- SUMCO CORPORATION
- Kazuhisa Torigoe
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER
- Publication number 20200083060
- Publication date Mar 12, 2020
- SUMCO CORPORATION
- Toshiaki ONO
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200058506
- Publication date Feb 20, 2020
- Mitsubishi Electric Corporation
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SILICON WAFER
- Publication number 20200020817
- Publication date Jan 16, 2020
- SUMCO CORPORATION
- Kazuhisa TORIGOE
- C30 - CRYSTAL GROWTH
Information Patent Application
EXTERNAL GETTERING METHOD AND DEVICE
- Publication number 20190341321
- Publication date Nov 7, 2019
- Micron Technology, Inc.
- Michael Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF TREATING SILICON WAFERS TO HAVE INTRINSIC GETTERING AND G...
- Publication number 20190267251
- Publication date Aug 29, 2019
- SunEdison Semiconductor Limited (UEN201334164H)
- Young Jung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON WAFER
- Publication number 20190119828
- Publication date Apr 25, 2019
- GLOBALWAFERS JAPAN CO., LTD.
- Susumu MAEDA
- C30 - CRYSTAL GROWTH
Information Patent Application
FZ SILICON AND METHOD TO PREPARE FZ SILICON
- Publication number 20190006190
- Publication date Jan 3, 2019
- Siltronic AG
- Alois HUBER
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20180350962
- Publication date Dec 6, 2018
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS

Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silicon wafer and manufacturing method of the same

Silicon wafer and manufacturing method of the same

Methods for growing a nitrogen doped single crystal silicon ingot u...

Method for producing a semiconductor wafer composed of monocrystall...

Epitaxial wafer including boron and germanium and method of fabrica...

Semiconductor wafer made of single-crystal silicon and process for...

Method of predicting thermal donor formation behavior in silicon wa...

Methods for growing a nitrogen doped single crystal silicon ingot u...

Semiconductor device and manufacturing method thereof

Silicon wafer

Semiconductor device and manufacturing method of semiconductor device

Semiconductor wafer composed of single-crystal silicon with high ga...

Semiconductor devices with superjunction structures

Photoelectric conversion device and manufacturing method and appara...

External gettering method and device

Epitaxial silicon wafer

Method of evaluating impurity gettering capability of epitaxial sil...

Semiconductor device and manufacturing method of semiconductor device

Method of treating silicon wafers to have intrinsic gettering and g...

Method for manufacturing semiconductor devices with superjunction s...

Silicon wafer

Silicon wafer and method for manufacturing same

Gettering layer formation and substrate

Semiconductor device and semiconductor device manufacturing method

Epitaxially coated semiconductor wafer, and method for producing an...

Method of treating silicon wafers to have intrinsic gettering and g...

External gettering method and device

Semiconductor device including a superlattice as a gettering layer

Method for making a semiconductor device including a superlattice a...

Silicon epitaxial wafer and method of producing silicon epitaxial w...

Patents Applicationslast 30 patents

SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING THE SAME

SUPPORT SUBSTRATE MADE OF SILICON SUITABLE FOR RADIOFREQUENCY APPLI...

METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE

SILICON WAFER AND MANUFACTURING METHOD OF THE SAME

SILICON WAFER AND METHOD FOR PRODUCING SILICON WAFER

SEMICONDUCTOR WAFER MADE OF SINGLE-CRYSTAL SILICON AND PROCESS FOR...

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

METHOD FOR MANUFACTURING EPITAXIAL WAFER AND EPITAXIAL WAFER

METHOD FOR PRODUCING A SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALL...

METHOD FOR MAKING A SEMICONDUCTOR DEVICE USING SUPERLATTICES WITH D...

METHODS FOR GROWING A NITROGEN DOPED SINGLE CRYSTAL SILICON INGOT U...

METHODS FOR GROWING A NITROGEN DOPED SINGLE CRYSTAL SILICON INGOT U...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Semiconductor Devices with Superjunction Structures

SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON

SEMICONDUCTOR WAFER COMPOSED OF SINGLE-CRYSTAL SILICON AND PROCESS...

EPITAXIAL WAFER AND METHOD OF FABRICATING THE SAME

METHOD OF EVALUATING IMPURITY GETTERING CAPABILITY OF EPITAXIAL SIL...

SEMICONDUCTOR WAFER MADE OF SINGLE-CRYSTAL SILICON AND PROCESS FOR...

METHOD OF PREDICTING THERMAL DONOR FORMATION BEHAVIOR IN SILICON WA...

SILICON WAFER

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

EPITAXIAL SILICON WAFER

EXTERNAL GETTERING METHOD AND DEVICE

METHOD OF TREATING SILICON WAFERS TO HAVE INTRINSIC GETTERING AND G...

SILICON WAFER

FZ SILICON AND METHOD TO PREPARE FZ SILICON

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE