Thin film JFET's

Industry

CPC
H01L29/8086

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/8086Thin film JFET's

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including poly-silicon junction field-effect t...
- Patent number 12,034,084
- Issue date Jul 9, 2024
- SK keyfoundry Inc.
- Young Bae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low voltage/power junction FET with all-around junction gate
- Patent number 11,869,983
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current reference
- Patent number 11,616,141
- Issue date Mar 28, 2023
- Texas Instruments Incorporated
- Sundeep Lakshmana Javvaji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film negative differential resistance and neuronal circuit
- Patent number 10,720,453
- Issue date Jul 21, 2020
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multiple state electrostatically formed nanowire transistors
- Patent number 10,707,355
- Issue date Jul 7, 2020
- Ramot at Tel Aviv University Ltd.
- Gideon Segev
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Thin-film negative differential resistance and neuronal circuit
- Patent number 10,672,804
- Issue date Jun 2, 2020
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Field effect transistor circuits
- Patent number 10,651,810
- Issue date May 12, 2020
- Ronald Quan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-off junction field-effect transistors and application to c...
- Patent number 10,615,290
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple subthreshold swing circuit and application to displays and...
- Patent number 10,593,744
- Issue date Mar 17, 2020
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple subthreshold swing circuit and application to displays and...
- Patent number 10,559,641
- Issue date Feb 11, 2020
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated JFET structure with implanted backgate
- Patent number 10,522,663
- Issue date Dec 31, 2019
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple subthreshold swing circuit and application to displays and...
- Patent number 10,475,871
- Issue date Nov 12, 2019
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film negative differential resistance and neuronal circuit
- Patent number 10,396,103
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Continuous crystalline gallium nitride (GaN) PN structure with no i...
- Patent number 10,177,247
- Issue date Jan 8, 2019
- Qorvo US, Inc.
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and method of manufacturing the same
- Patent number 10,177,328
- Issue date Jan 8, 2019
- Fujitsu Limited
- Shintaro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated JFET structure with implanted backgate
- Patent number 10,079,294
- Issue date Sep 18, 2018
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-off junction field-effect transistors and application to c...
- Patent number 10,038,104
- Issue date Jul 31, 2018
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field effect transistor (JFET) with first and second top l...
- Patent number 9,929,283
- Issue date Mar 27, 2018
- Vanguard International Semiconductor Corporation
- Manoj Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 9,837,496
- Issue date Dec 5, 2017
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Yusuke Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
JFET device structures and methods for fabricating the same
- Patent number 9,831,246
- Issue date Nov 28, 2017
- Micron Technology, Inc.
- Chandra Mouli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned heterojunction field effect transistor
- Patent number 9,741,871
- Issue date Aug 22, 2017
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-off junction field-effect transistors and application to c...
- Patent number 9,543,290
- Issue date Jan 10, 2017
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field-effect transistor with raised source and drain regio...
- Patent number 9,236,499
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES Inc.
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Structures and methods for electrically and mechanically linked mon...
- Patent number 9,159,710
- Issue date Oct 13, 2015
- Cornell University
- Amit Lal
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method and system for a gallium nitride vertical JFET with self-ali...
- Patent number 9,117,850
- Issue date Aug 25, 2015
- Avogy, Inc.
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-JFET
- Patent number 9,076,662
- Issue date Jul 7, 2015
- Micron Technology, Inc.
- Badih El-Kareh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional gate-wrap-around field-effect transistor
- Patent number 9,048,330
- Issue date Jun 2, 2015
- Board of Regents, The University of Texas System
- Jack C. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon device on SI:C-OI and SGOI and method of manufacture
- Patent number 9,040,373
- Issue date May 26, 2015
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field effect transistor structure with P-type silicon germ...
- Patent number 8,921,172
- Issue date Dec 30, 2014
- International Business Machines Corporation
- Xuefeng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a GaN vertical JFET with self-aligned source...
- Patent number 8,829,574
- Issue date Sep 9, 2014
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATED BODY TRANSISTORS
- Publication number 20240421233
- Publication date Dec 19, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ming Tsang TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING POLY-SILICON JUNCTION FIELD-EFFECT T...
- Publication number 20220376118
- Publication date Nov 24, 2022
- KEY FOUNDRY CO., LTD.
- Young Bae KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURRENT REFERENCE
- Publication number 20210408281
- Publication date Dec 30, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Sundeep Lakshmana JAVVAJI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW VOLTAGE/POWER JUNCTION FET WITH ALL-AROUND JUNCTION GATE
- Publication number 20210288187
- Publication date Sep 16, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple-state electrostatically-formed nanowire transistors
- Publication number 20200243690
- Publication date Jul 30, 2020
- Ramot at Tel Aviv University Ltd.
- Gideon Segev
- B82 - NANO-TECHNOLOGY
Information Patent Application
THIN-FILM NEGATIVE DIFFERENTIAL RESISTANCE AND NEURONAL CIRCUIT
- Publication number 20190312066
- Publication date Oct 10, 2019
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MULTIPLE SUBTHRESHOLD SWING CIRCUIT AND APPLICATION TO DISPLAYS AND...
- Publication number 20190305067
- Publication date Oct 3, 2019
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE SUBTHRESHOLD SWING CIRCUIT AND APPLICATION TO DISPLAYS AND...
- Publication number 20190288050
- Publication date Sep 19, 2019
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN-FILM NEGATIVE DIFFERENTIAL RESISTANCE AND NEURONAL CIRCUIT
- Publication number 20190252419
- Publication date Aug 15, 2019
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTEGRATED JFET STRUCTURE WITH IMPLANTED BACKGATE
- Publication number 20190019884
- Publication date Jan 17, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF JUNCTION FIELD-EFFECT TRANSISTORS AND APPLICATION TO C...
- Publication number 20180301567
- Publication date Oct 18, 2018
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED JFET STRUCTURE WITH IMPLANTED BACKGATE
- Publication number 20170373171
- Publication date Dec 28, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE STATE ELECTROSTATICALLY FORMED NANOWIRE TRANSISTORS
- Publication number 20170243983
- Publication date Aug 24, 2017
- Ramot at Tel Aviv University Ltd.
- Gideon Segev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED HETEROJUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20170125607
- Publication date May 4, 2017
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20170098662
- Publication date Apr 6, 2017
- Renesas Electronics Corproation
- Hiroshi SUNAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF JUNCTION FIELD-EFFECT TRANSISTORS AND APPLICATION TO C...
- Publication number 20170092782
- Publication date Mar 30, 2017
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH VERTICAL JFET WITH IMPROVED THRESHOLD VOLTAGE CONTROL
- Publication number 20160336432
- Publication date Nov 17, 2016
- UNITED SILICON CARBIDE, INC.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20160056245
- Publication date Feb 25, 2016
- Panasonic Intellectual Property Management Co., Ltd.
- YUSUKE KINOSHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM HYBRID JUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20150333187
- Publication date Nov 19, 2015
- International Business Machines Corporation
- Bahman Hekmatshoar-Tabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF JUNCTION FIELD-EFFECT TRANSISTORS AND APPLICATION TO C...
- Publication number 20150206947
- Publication date Jul 23, 2015
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL GATE-WRAP-AROUND FIELD-EFFECT TRANSISTOR
- Publication number 20150060957
- Publication date Mar 5, 2015
- Board of Regents, The University of Texas System
- Jack C. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...
- Publication number 20140370669
- Publication date Dec 18, 2014
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTOR STRUCTURE WITH P-TYPE SILICON GERM...
- Publication number 20140235021
- Publication date Aug 21, 2014
- International Business Machines Corporation
- Xuefeng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON DEVICE ON SI:C-OI AND SGOI AND METHOD OF MANUFACTURE
- Publication number 20140103366
- Publication date Apr 17, 2014
- International Business Machines Corporation
- Dureseti CHIDAMBARRAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM HYBRID JUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20130328110
- Publication date Dec 12, 2013
- International Business Machines Corporation
- Bahman Hekmatshoar-Tabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES AND METHODS FOR ELECTRICALLY AND MECHANICALLY LINKED MON...
- Publication number 20130328109
- Publication date Dec 12, 2013
- Cornell University
- Amit Lal
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
FIN-JFET
- Publication number 20130313618
- Publication date Nov 28, 2013
- Micron Technology, Inc.
- Badih El-Kareh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JFET DEVICE STRUCTURES AND METHODS FOR FABRICATING THE SAME
- Publication number 20130285124
- Publication date Oct 31, 2013
- Chandra Mouli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GAN VERTICAL JFET WITH SELF-ALIGNED SOURCE...
- Publication number 20130161705
- Publication date Jun 27, 2013
- EPOWERSOFT, INC.
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD-EFFECT TRANSISTOR WITH RAISED SOURCE AND DRAIN REGIO...
- Publication number 20130119442
- Publication date May 16, 2013
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING

Thin film JFET's

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device including poly-silicon junction field-effect t...

Low voltage/power junction FET with all-around junction gate

Current reference

Thin-film negative differential resistance and neuronal circuit

Multiple state electrostatically formed nanowire transistors

Thin-film negative differential resistance and neuronal circuit

Field effect transistor circuits

Normally-off junction field-effect transistors and application to c...

Multiple subthreshold swing circuit and application to displays and...

Multiple subthreshold swing circuit and application to displays and...

Integrated JFET structure with implanted backgate

Multiple subthreshold swing circuit and application to displays and...

Thin-film negative differential resistance and neuronal circuit

Continuous crystalline gallium nitride (GaN) PN structure with no i...

Electronic device and method of manufacturing the same

Integrated JFET structure with implanted backgate

Normally-off junction field-effect transistors and application to c...

Junction field effect transistor (JFET) with first and second top l...

Semiconductor device and method for manufacturing same

JFET device structures and methods for fabricating the same

Self-aligned heterojunction field effect transistor

Normally-off junction field-effect transistors and application to c...

Junction field-effect transistor with raised source and drain regio...

Structures and methods for electrically and mechanically linked mon...

Method and system for a gallium nitride vertical JFET with self-ali...

Fin-JFET

Three-dimensional gate-wrap-around field-effect transistor

Silicon device on SI:C-OI and SGOI and method of manufacture

Junction field effect transistor structure with P-type silicon germ...

Method and system for a GaN vertical JFET with self-aligned source...

Patents Applicationslast 30 patents

GATED BODY TRANSISTORS

SEMICONDUCTOR DEVICE INCLUDING POLY-SILICON JUNCTION FIELD-EFFECT T...

CURRENT REFERENCE

LOW VOLTAGE/POWER JUNCTION FET WITH ALL-AROUND JUNCTION GATE

Multiple-state electrostatically-formed nanowire transistors

THIN-FILM NEGATIVE DIFFERENTIAL RESISTANCE AND NEURONAL CIRCUIT

MULTIPLE SUBTHRESHOLD SWING CIRCUIT AND APPLICATION TO DISPLAYS AND...

MULTIPLE SUBTHRESHOLD SWING CIRCUIT AND APPLICATION TO DISPLAYS AND...

THIN-FILM NEGATIVE DIFFERENTIAL RESISTANCE AND NEURONAL CIRCUIT

INTEGRATED JFET STRUCTURE WITH IMPLANTED BACKGATE

NORMALLY-OFF JUNCTION FIELD-EFFECT TRANSISTORS AND APPLICATION TO C...

INTEGRATED JFET STRUCTURE WITH IMPLANTED BACKGATE

MULTIPLE STATE ELECTROSTATICALLY FORMED NANOWIRE TRANSISTORS

SELF-ALIGNED HETEROJUNCTION FIELD EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

NORMALLY-OFF JUNCTION FIELD-EFFECT TRANSISTORS AND APPLICATION TO C...

TRENCH VERTICAL JFET WITH IMPROVED THRESHOLD VOLTAGE CONTROL

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

THIN FILM HYBRID JUNCTION FIELD EFFECT TRANSISTOR

NORMALLY-OFF JUNCTION FIELD-EFFECT TRANSISTORS AND APPLICATION TO C...

THREE-DIMENSIONAL GATE-WRAP-AROUND FIELD-EFFECT TRANSISTOR

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...

JUNCTION FIELD EFFECT TRANSISTOR STRUCTURE WITH P-TYPE SILICON GERM...

SILICON DEVICE ON SI:C-OI AND SGOI AND METHOD OF MANUFACTURE

THIN FILM HYBRID JUNCTION FIELD EFFECT TRANSISTOR

STRUCTURES AND METHODS FOR ELECTRICALLY AND MECHANICALLY LINKED MON...

FIN-JFET

JFET DEVICE STRUCTURES AND METHODS FOR FABRICATING THE SAME

METHOD AND SYSTEM FOR A GAN VERTICAL JFET WITH SELF-ALIGNED SOURCE...

JUNCTION FIELD-EFFECT TRANSISTOR WITH RAISED SOURCE AND DRAIN REGIO...