Thin film MESFET's

Industry

CPC
H01L29/8126

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/8126Thin film MESFET's

Industries

Patents Grantslast 30 patents

Information Patent Grant
Surface MESFET
- Patent number 11,296,239
- Issue date Apr 5, 2022
- EMBERION OY
- Sami Kallioinen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-frequency transistor
- Patent number 11,195,904
- Issue date Dec 7, 2021
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Kouki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate field effect transistor having passivated schottky b...
- Patent number 11,043,571
- Issue date Jun 22, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-frequency transistor
- Patent number 10,756,165
- Issue date Aug 25, 2020
- PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.
- Kouki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit die having back-end-of-line transistors
- Patent number 10,644,140
- Issue date May 5, 2020
- Intel Corporation
- Van Hoang Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-off junction field-effect transistors and application to c...
- Patent number 10,615,290
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ga2O3-based semiconductor element
- Patent number 10,249,767
- Issue date Apr 2, 2019
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate field effect transistor having passivated schottky b...
- Patent number 9,583,614
- Issue date Feb 28, 2017
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-off junction field-effect transistors and application to c...
- Patent number 9,543,290
- Issue date Jan 10, 2017
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ga2O3 semiconductor element
- Patent number 9,437,689
- Issue date Sep 6, 2016
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ga2O3 semiconductor element
- Patent number 9,397,170
- Issue date Jul 19, 2016
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures and methods for electrically and mechanically linked mon...
- Patent number 9,159,710
- Issue date Oct 13, 2015
- Cornell University
- Amit Lal
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Insulated gate field effect transistor having passivated schottky b...
- Patent number 8,916,437
- Issue date Dec 23, 2014
- Acorn Technologies, Inc.
- Daniel E. Grupp
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device
- Patent number 8,872,282
- Issue date Oct 28, 2014
- Kabushiki Kaisha Toshiba
- Jeoungchill Shim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontally depleted metal semiconductor field effect transistor
- Patent number 8,441,048
- Issue date May 14, 2013
- Arizona Board of Regents for and on behalf of Arizona State University
- Joseph E. Ervin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor having Schottky barrier
- Patent number 8,410,531
- Issue date Apr 2, 2013
- Chunghwa Picture Tubes, Ltd.
- Ming-Tse Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate field effect transistor having passivated schottky b...
- Patent number 8,377,767
- Issue date Feb 19, 2013
- Acorn Technologies, Inc.
- Daniel E. Grupp
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Hybrid molecular electronic devices containing molecule-functionali...
- Patent number 8,362,559
- Issue date Jan 29, 2013
- William Marsh Rice University
- James M. Tour
- G11 - INFORMATION STORAGE
Information Patent Grant
Thin film semiconductor device comprising nanocrystalline silicon p...
- Patent number 8,026,565
- Issue date Sep 27, 2011
- University of Cape Town
- Margit Harting
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Metal semiconductor field effect transistor (MESFET) silicon-on-ins...
- Patent number 7,939,865
- Issue date May 10, 2011
- Honeywell International Inc.
- Paul Fechner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate field effect transistor having passivated schottky b...
- Patent number 7,883,980
- Issue date Feb 8, 2011
- Acorn Technologies, Inc.
- Daniel E. Grupp
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for fabricating Schottky barrier tunnel transistor
- Patent number 7,863,121
- Issue date Jan 4, 2011
- Electronics and Telecommunications Research Institute
- Moon-Gyu Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with mesa structure and reduced g...
- Patent number 7,608,864
- Issue date Oct 27, 2009
- Oki Semiconductor Co., Ltd.
- Shinichi Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI bottom pre-doping merged e-SiGe for poly height reduction
- Patent number 7,605,042
- Issue date Oct 20, 2009
- Toshiba America Electronic Components, Inc.
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device for reducing a surfac...
- Patent number 7,449,399
- Issue date Nov 11, 2008
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switch
- Patent number 7,332,754
- Issue date Feb 19, 2008
- Matsushita Electric Industrial Co., Ltd.
- Takashi Uno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky power diode with SiCOI substrate and process for making su...
- Patent number 7,166,894
- Issue date Jan 23, 2007
- Commissariat a l'Energie Atomique
- François Templier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device including exposing a...
- Patent number 7,122,451
- Issue date Oct 17, 2006
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate field effect transistor having passivated Schottky b...
- Patent number 7,112,478
- Issue date Sep 26, 2006
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate field effect transistor having passivated schottky b...
- Patent number 6,833,556
- Issue date Dec 21, 2004
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH-FREQUENCY TRANSISTOR
- Publication number 20200350397
- Publication date Nov 5, 2020
- Panasonic Semiconductor Solutions Co., Ltd.
- Kouki YAMAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-FREQUENCY TRANSISTOR
- Publication number 20190378894
- Publication date Dec 12, 2019
- Panasonic Intellectual Property Management Co., Ltd.
- Kouki YAMAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF JUNCTION FIELD-EFFECT TRANSISTORS AND APPLICATION TO C...
- Publication number 20180301567
- Publication date Oct 18, 2018
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD FOR SAME
- Publication number 20170288061
- Publication date Oct 5, 2017
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM HYBRID JUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20150333187
- Publication date Nov 19, 2015
- International Business Machines Corporation
- Bahman Hekmatshoar-Tabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE FIELD EFFECT TRANSISTOR HAVING PASSIVATED SCHOTTKY B...
- Publication number 20140284666
- Publication date Sep 25, 2014
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ga2O3 SEMICONDUCTOR ELEMENT
- Publication number 20140217469
- Publication date Aug 7, 2014
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM HYBRID JUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20130328110
- Publication date Dec 12, 2013
- International Business Machines Corporation
- Bahman Hekmatshoar-Tabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES AND METHODS FOR ELECTRICALLY AND MECHANICALLY LINKED MON...
- Publication number 20130328109
- Publication date Dec 12, 2013
- Cornell University
- Amit Lal
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20130320335
- Publication date Dec 5, 2013
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE FIELD EFFECT TRANSISTOR HAVING PASSIVATED SCHOTTKY B...
- Publication number 20130140629
- Publication date Jun 6, 2013
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130099325
- Publication date Apr 25, 2013
- Kabushiki Kaisha Toshiba
- Jeoungchill SHIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTOR HAVING SCHOTTKY BARRIER
- Publication number 20120146003
- Publication date Jun 14, 2012
- Ming-Tse Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE FIELD EFFECT TRANSISTOR HAVING PASSIVATED SCHOTTKY B...
- Publication number 20110210376
- Publication date Sep 1, 2011
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER TUNNEL TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20110068326
- Publication date Mar 24, 2011
- Moon-Gyu JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTALLY DEPLETED METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR
- Publication number 20100320508
- Publication date Dec 23, 2010
- Arizona Board of Regents for and on behalf of Arizona State University
- Joseph E. Ervin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid Molecular Electronic Devices Containing Molecule-Functionali...
- Publication number 20100252824
- Publication date Oct 7, 2010
- William Marsh Rice University
- James M. Tour
- G01 - MEASURING TESTING
Information Patent Application
METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MESFET) SILICON-ON-INS...
- Publication number 20100181603
- Publication date Jul 22, 2010
- Honeywell International Inc.
- Paul Fechner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky barrier tunnel transistor and method for fabricating the same
- Publication number 20080121868
- Publication date May 29, 2008
- Electronics and Telecommunication Research Institute
- Moon-Gyu Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated gate field effect transistor having passivated schottky b...
- Publication number 20070026591
- Publication date Feb 1, 2007
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20070020896
- Publication date Jan 25, 2007
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI bottom pre-doping merged e-SiGe for poly height reduction
- Publication number 20060234432
- Publication date Oct 19, 2006
- Toshiba America Electronic Components, Inc
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin film semiconductor device and method of manufacturing a thin f...
- Publication number 20060199313
- Publication date Sep 7, 2006
- University of Cape Town
- Margit Harting
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Schottky power diode comprising a sicoi substrate and the method of...
- Publication number 20050161760
- Publication date Jul 28, 2005
- Commissarist A L'Energie Atomique
- Francois Templier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and its manufacturing method
- Publication number 20050161704
- Publication date Jul 28, 2005
- Shinichi Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor switch
- Publication number 20050151208
- Publication date Jul 14, 2005
- Matsushita Elec. Ind. Co. Ltd.
- Takashi Uno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20040175853
- Publication date Sep 9, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated gate field effect transistor having passivated Schottky b...
- Publication number 20040142524
- Publication date Jul 22, 2004
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated gate field effect transistor having passivated schottky b...
- Publication number 20040026736
- Publication date Feb 12, 2004
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030160269
- Publication date Aug 28, 2003
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS

Thin film MESFET's

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Surface MESFET

High-frequency transistor

Insulated gate field effect transistor having passivated schottky b...

High-frequency transistor

Integrated circuit die having back-end-of-line transistors

Normally-off junction field-effect transistors and application to c...

Ga2O3-based semiconductor element

Insulated gate field effect transistor having passivated schottky b...

Normally-off junction field-effect transistors and application to c...

Ga2O3 semiconductor element

Ga2O3 semiconductor element

Structures and methods for electrically and mechanically linked mon...

Insulated gate field effect transistor having passivated schottky b...

Semiconductor device

Horizontally depleted metal semiconductor field effect transistor

Thin film transistor having Schottky barrier

Insulated gate field effect transistor having passivated schottky b...

Hybrid molecular electronic devices containing molecule-functionali...

Thin film semiconductor device comprising nanocrystalline silicon p...

Metal semiconductor field effect transistor (MESFET) silicon-on-ins...

Insulated gate field effect transistor having passivated schottky b...

Method for fabricating Schottky barrier tunnel transistor

High electron mobility transistor with mesa structure and reduced g...

SOI bottom pre-doping merged e-SiGe for poly height reduction

Method for fabricating a semiconductor device for reducing a surfac...

Semiconductor switch

Schottky power diode with SiCOI substrate and process for making su...

Method for fabricating a semiconductor device including exposing a...

Insulated gate field effect transistor having passivated Schottky b...

Insulated gate field effect transistor having passivated schottky b...

Patents Applicationslast 30 patents

HIGH-FREQUENCY TRANSISTOR

HIGH-FREQUENCY TRANSISTOR

NORMALLY-OFF JUNCTION FIELD-EFFECT TRANSISTORS AND APPLICATION TO C...

SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD FOR SAME

THIN FILM HYBRID JUNCTION FIELD EFFECT TRANSISTOR

INSULATED GATE FIELD EFFECT TRANSISTOR HAVING PASSIVATED SCHOTTKY B...

Ga2O3 SEMICONDUCTOR ELEMENT

THIN FILM HYBRID JUNCTION FIELD EFFECT TRANSISTOR

STRUCTURES AND METHODS FOR ELECTRICALLY AND MECHANICALLY LINKED MON...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

INSULATED GATE FIELD EFFECT TRANSISTOR HAVING PASSIVATED SCHOTTKY B...

SEMICONDUCTOR DEVICE

THIN FILM TRANSISTOR HAVING SCHOTTKY BARRIER

INSULATED GATE FIELD EFFECT TRANSISTOR HAVING PASSIVATED SCHOTTKY B...

SCHOTTKY BARRIER TUNNEL TRANSISTOR AND METHOD FOR FABRICATING THE SAME

HORIZONTALLY DEPLETED METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR

Hybrid Molecular Electronic Devices Containing Molecule-Functionali...

METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MESFET) SILICON-ON-INS...

Schottky barrier tunnel transistor and method for fabricating the same

Insulated gate field effect transistor having passivated schottky b...

Semiconductor device and method for fabricating the same

SOI bottom pre-doping merged e-SiGe for poly height reduction

Thin film semiconductor device and method of manufacturing a thin f...

Schottky power diode comprising a sicoi substrate and the method of...

Semiconductor device and its manufacturing method

Semiconductor switch

Semiconductor device and method for fabricating the same

Insulated gate field effect transistor having passivated Schottky b...

Insulated gate field effect transistor having passivated schottky b...

Semiconductor device and method for fabricating the same