Transistor-type devices

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H01L29/72

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/72Transistor-type devices

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Stretchable form of single crystal silicon for high performance ele...
- Patent number 11,456,258
- Issue date Sep 27, 2022
- The Board of Trustees of the University of Illinois
- John A. Rogers
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Transistor structure
- Patent number 11,380,766
- Issue date Jul 5, 2022
- STMicroelectronics S.A.
- Sotirios Athanasiou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching circuit and high frequency module
- Patent number 11,336,278
- Issue date May 17, 2022
- Murata Manufacturing Co., Ltd.
- Masashi Hayakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avalanche diode along with vertical PN junction and method for manu...
- Patent number 11,329,185
- Issue date May 10, 2022
- STMicroelectronics (Research & Development) Limited
- Laurence Stark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pressure sensing unit and pressure sensor, pressure sensing device
- Patent number 11,287,333
- Issue date Mar 29, 2022
- Hefei Xinsheng Optoelectronics Technology Co., Ltd.
- Qinghe Wang
- G01 - MEASURING TESTING
Information Patent Grant
Sensor
- Patent number 11,275,045
- Issue date Mar 15, 2022
- MINEBEA MITSUMI INC.
- Taketomo Nakane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal device and lighting device using the same
- Patent number 11,107,933
- Issue date Aug 31, 2021
- Teresa Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avalanche diode along with vertical PN junction and method for manu...
- Patent number 10,872,995
- Issue date Dec 22, 2020
- STMicroelectronics (Research & Development) Limited
- Laurence Stark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with fluorinated graphene spacer
- Patent number 10,665,678
- Issue date May 26, 2020
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator structure having bipolar stress, and manufactu...
- Patent number 10,497,718
- Issue date Dec 3, 2019
- Yanfei Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 10,453,917
- Issue date Oct 22, 2019
- Fuji Electric Co., Ltd.
- Isamu Sugai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled buckling structures in semiconductor interconnects and n...
- Patent number 10,355,113
- Issue date Jul 16, 2019
- The Board of Trustees of the University of Illinois
- John A. Rogers
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Avalanche diode including vertical PN junction
- Patent number 10,283,664
- Issue date May 7, 2019
- STMicroelectronics (Research & Development) Limited
- Laurence Stark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with fluorinated graphene spacer
- Patent number 10,263,080
- Issue date Apr 16, 2019
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 10,249,748
- Issue date Apr 2, 2019
- Panasonic Corporation
- Ryo Kajitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ternary barristor with schottky junction graphene semiconductor
- Patent number 10,243,076
- Issue date Mar 26, 2019
- Gwangju Institute of Science and Technology
- Byoung Hun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having an air-gap gate sidewall spacer and...
- Patent number 10,128,334
- Issue date Nov 13, 2018
- GLOBALFOUNDRIES Inc.
- Emilie Bourjot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sensor device including diode elements connected in series in oppos...
- Patent number 10,096,590
- Issue date Oct 9, 2018
- Hitachi Automotive Systems, Ltd.
- Masahiro Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting element and lighting system
- Patent number 9,935,238
- Issue date Apr 3, 2018
- LG Innotek Co., Ltd
- Ki Young Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-substrate double-base high-voltage bipolar transistors
- Patent number 9,786,773
- Issue date Oct 10, 2017
- IDEAL POWER, INC.
- William C. Alexander
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Structures and methods with reduced sensitivity to surface charge
- Patent number 9,614,028
- Issue date Apr 4, 2017
- IDEAL POWER, INC.
- Richard A. Blanchard
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
System for self-aligned contacts
- Patent number 9,202,704
- Issue date Dec 1, 2015
- Teledyne Scientific & Imaging, LLC
- Miguel Urteaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide barrier diode
- Patent number 9,035,323
- Issue date May 19, 2015
- Youngstown State University
- Tom Nelson Oder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide barrier diode
- Patent number 8,816,356
- Issue date Aug 26, 2014
- Youngstown State University
- Tom Nelson Oder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System for self-aligned contacts
- Patent number 8,679,969
- Issue date Mar 25, 2014
- Teledyne Scientific & Imaging, LLC
- Miguel Urteaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,373,247
- Issue date Feb 12, 2013
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor that can be fabricated in CMOS
- Patent number 6,300,660
- Issue date Oct 9, 2001
- Robert Patti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistors and methods of making
- Patent number 6,043,507
- Issue date Mar 28, 2000
- Micron Technology, Inc.
- Charles H. Dennison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interband single-electron tunnel transistor and integrated circuit
- Patent number 5,422,496
- Issue date Jun 6, 1995
- Hitachi, Ltd.
- Shiroo Kamohara
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Interband single-electron tunnel transistor and integrated circuit
- Patent number 5,258,625
- Issue date Nov 2, 1993
- Hitachi, Ltd.
- Shiroo Kamohara
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
AVALANCHE DIODE ALONG WITH VERTICAL PN JUNCTION AND METHOD FOR MANU...
- Publication number 20210111296
- Publication date Apr 15, 2021
- STMicroelectronics (Research and Development) Limited
- Laurence Stark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL DEVICE AND LIGHTING DEVICE USING THE SAME
- Publication number 20200395490
- Publication date Dec 17, 2020
- Teresa OH
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Stretchable Form of Single Crystal Silicon for High Performance Ele...
- Publication number 20200013720
- Publication date Jan 9, 2020
- THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
- John A. ROGERS
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
SILICON-ON-INSULATOR STRUCTURE HAVING BIPOLAR STRESS, AND MANUFACTU...
- Publication number 20190304998
- Publication date Oct 3, 2019
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Yanfei MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH FLUORINATED GRAPHENE SPACER
- Publication number 20190221645
- Publication date Jul 18, 2019
- QUALCOMM Incorporated
- Ye LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Avalanche Diode and Method for Manufacturing the Same Field
- Publication number 20190221704
- Publication date Jul 18, 2019
- STMicroelectronics (Research and Development) Limited
- Laurence Stark
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20190165092
- Publication date May 30, 2019
- Fuji Electric Co., Ltd.
- Isamu SUGAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH FLUORINATED GRAPHENE SPACER
- Publication number 20180342585
- Publication date Nov 29, 2018
- QUALCOMM Incorporated
- Ye LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVALANCHE DIODE AND METHOD FOR MANUFACTURING THE SAME FIELD
- Publication number 20180108799
- Publication date Apr 19, 2018
- STMicroelectronics (Research and Development) Limited
- Laurence Stark
- G01 - MEASURING TESTING
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING...
- Publication number 20170309566
- Publication date Oct 26, 2017
- RENESAS ELECTRONICS CORPORATION
- Naotake WATANABE
- G01 - MEASURING TESTING
Information Patent Application
SWITCHING CIRCUIT AND HIGH FREQUENCY MODULE
- Publication number 20170310319
- Publication date Oct 26, 2017
- Murata Manufacturing Co., Ltd.
- Masashi HAYAKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SENSOR DEVICE
- Publication number 20170278838
- Publication date Sep 28, 2017
- Hitachi Automotive Systems, Ltd.
- Masahiro MATSUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE BARRIER DIODE
- Publication number 20140327017
- Publication date Nov 6, 2014
- YOUNGSTOWN STATE UNIVERSITY
- Tom Nelson Oder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE CHARGE MITIGATION LAYER FOR MEMS SENSORS
- Publication number 20140239421
- Publication date Aug 28, 2014
- ROBERT BOSCH GmbH
- Andrew Graham
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
System for Self-Aligned Contacts
- Publication number 20140213052
- Publication date Jul 31, 2014
- Miguel Urteaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System for Self-Aligned Contacts
- Publication number 20130032927
- Publication date Feb 7, 2013
- Miguel Urteaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE BARRIER DIODE
- Publication number 20110241021
- Publication date Oct 6, 2011
- Tom Nelson Oder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20110215418
- Publication date Sep 8, 2011
- Kabushiki Kaisha Toshiba
- Wataru SAITO
- H01 - BASIC ELECTRIC ELEMENTS

Transistor-type devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Stretchable form of single crystal silicon for high performance ele...

Transistor structure

Switching circuit and high frequency module

Avalanche diode along with vertical PN junction and method for manu...

Pressure sensing unit and pressure sensor, pressure sensing device

Sensor

Two-terminal device and lighting device using the same

Avalanche diode along with vertical PN junction and method for manu...

Transistor with fluorinated graphene spacer

Silicon-on-insulator structure having bipolar stress, and manufactu...

Method of manufacturing semiconductor device

Controlled buckling structures in semiconductor interconnects and n...

Avalanche diode including vertical PN junction

Transistor with fluorinated graphene spacer

Nitride semiconductor device

Ternary barristor with schottky junction graphene semiconductor

Field effect transistor having an air-gap gate sidewall spacer and...

Sensor device including diode elements connected in series in oppos...

Light-emitting element and lighting system

Thin-substrate double-base high-voltage bipolar transistors

Structures and methods with reduced sensitivity to surface charge

System for self-aligned contacts

Silicon carbide barrier diode

Silicon carbide barrier diode

System for self-aligned contacts

Semiconductor device

Bipolar transistor that can be fabricated in CMOS

Thin film transistors and methods of making

Interband single-electron tunnel transistor and integrated circuit

Interband single-electron tunnel transistor and integrated circuit

Patents Applicationslast 30 patents

AVALANCHE DIODE ALONG WITH VERTICAL PN JUNCTION AND METHOD FOR MANU...

TWO-TERMINAL DEVICE AND LIGHTING DEVICE USING THE SAME

Stretchable Form of Single Crystal Silicon for High Performance Ele...

SILICON-ON-INSULATOR STRUCTURE HAVING BIPOLAR STRESS, AND MANUFACTU...

TRANSISTOR WITH FLUORINATED GRAPHENE SPACER

Avalanche Diode and Method for Manufacturing the Same Field

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

TRANSISTOR WITH FLUORINATED GRAPHENE SPACER

AVALANCHE DIODE AND METHOD FOR MANUFACTURING THE SAME FIELD

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING...

SWITCHING CIRCUIT AND HIGH FREQUENCY MODULE

SENSOR DEVICE

SILICON CARBIDE BARRIER DIODE

SURFACE CHARGE MITIGATION LAYER FOR MEMS SENSORS

System for Self-Aligned Contacts

System for Self-Aligned Contacts

SILICON CARBIDE BARRIER DIODE

SEMICONDUCTOR DEVICE