Unipolar field-effect transistors

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H01L29/66409

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66409Unipolar field-effect transistors

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with control electrodes provided in trenches o...
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- Issue date Aug 8, 2023
- Kabushiki Kaisha Toshiba
- Masataka Ino
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Heavily doped buried layer to reduce MOSFET off capacitance
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- Issue date Oct 12, 2021
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High-electron-mobility transistor and manufacturing method thereof
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- Issue date May 18, 2021
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- Ming-Wei Tsai
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Circuit structure
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- Issue date Feb 2, 2021
- Powerchip Semiconductor Manufacturing Corporation
- Chun-Sheng Chen
- G11 - INFORMATION STORAGE
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- Issue date Oct 20, 2020
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- Ming-Wei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
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MIM capacitor containing negative capacitance material
- Patent number 10,566,413
- Issue date Feb 18, 2020
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistor and manufacturing method thereof
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- Issue date Jun 19, 2018
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Graphene FET devices, systems, and methods of using the same for se...
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MIM capacitor formation in RMG module
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- Issue date Dec 26, 2017
- International Business Machines Corporation
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Nonplanar III-N transistors with compositionally graded semiconduct...
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- Issue date Oct 31, 2017
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- H04 - ELECTRIC COMMUNICATION TECHNIQUE
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MIM capacitor formation in RMG module
- Patent number 9,490,252
- Issue date Nov 8, 2016
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differential pair sensing circuit structures
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- Issue date Aug 23, 2016
- FREESCALE SEMICONDUCTOR, INC.
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Information Patent Grant
Nonplanar III-N transistors with compositionally graded semiconduct...
- Patent number 9,373,693
- Issue date Jun 21, 2016
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antifuse of semiconductor device and method of fabricating the same
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- Issue date Mar 15, 2016
- SK Hynix Inc.
- Yeong Eui Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET device
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- Issue date Apr 28, 2015
- Industrial Technology Research Institute
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antifuse of semiconductor device and method of fabricating the same
- Patent number 8,975,701
- Issue date Mar 10, 2015
- SK Hynix Inc.
- Yeong Eui Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced charge transistor
- Patent number 8,946,787
- Issue date Feb 3, 2015
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonplanar III-N transistors with compositionally graded semiconduct...
- Patent number 8,896,101
- Issue date Nov 25, 2014
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with germanium-rich active layers and doped t...
- Patent number 8,748,940
- Issue date Jun 10, 2014
- Intel Corporation
- Willy Rachmady
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
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Semiconductor device and method of manufacturing the same
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- Issue date Nov 19, 2013
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Nanodevice, transistor comprising the nanodevice, method for manufa...
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- B82 - NANO-TECHNOLOGY
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Method for fabricating Schottky barrier tunnel transistor
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- Issue date Jan 4, 2011
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Vertical carbon nanotube field effect transistors and arrays
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- Issue date Nov 9, 2010
- International Business Machines Corporation
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- B82 - NANO-TECHNOLOGY
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Methods of fabricating vertical carbon nanotube field effect transi...
- Patent number 7,820,502
- Issue date Oct 26, 2010
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device having local interconnection layer and etch st...
- Patent number 7,704,892
- Issue date Apr 27, 2010
- Samsung Electronics Co., Ltd.
- Dong-kyun Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing solid-state imaging device
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- Issue date Oct 23, 2007
- Matsushita Electric Industrial Co., Ltd.
- Mototaka Ochi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having local interconnection layer and etch st...
- Patent number 7,122,850
- Issue date Oct 17, 2006
- Samsung Electronics Co., Ltd.
- Dong-kyun Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2997634
- Patent number 2,997,634
- Issue date Aug 22, 1961
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE CAPABLE OF RELEASING PROCESS CHARGE, AND METHO...
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- Publication date Dec 5, 2024
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- H01 - BASIC ELECTRIC ELEMENTS
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- Publication number 20240332322
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- Intel Corporation
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- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF
- Publication number 20240213319
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- HON HAI PRECISION INDUSTRY CO., LTD.
- Yun-Hung SHEN
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20230055520
- Publication date Feb 23, 2023
- Kabushiki Kaisha Toshiba
- Masataka INO
- H01 - BASIC ELECTRIC ELEMENTS
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STACKED SEMICONDUCTOR CHIP STRUCTURE AND ITS PROCESS
- Publication number 20220085188
- Publication date Mar 17, 2022
- Bo TU
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CIRCUIT STRUCTURE
- Publication number 20210020629
- Publication date Jan 21, 2021
- Powerchip Semiconductor Manufacturing Corporation
- Chun-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
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HEAVILY DOPED BURIED LAYER TO REDUCE MOSFET OFF CAPACITANCE
- Publication number 20200286997
- Publication date Sep 10, 2020
- Analog Devices, Inc.
- Pengfei Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIM CAPACITOR CONTAINING NEGATIVE CAPACITANCE MATERIAL
- Publication number 20190103459
- Publication date Apr 4, 2019
- QUALCOMM Incorporated
- Ye LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20190006498
- Publication date Jan 3, 2019
- Taiwan Semiconductor Manufacturing company Ltd.
- MING-WEI TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20180294347
- Publication date Oct 11, 2018
- Taiwan Semiconductor Manufacturing company Ltd.
- MING-WEI TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20170213903
- Publication date Jul 27, 2017
- Taiwan Semiconductor Manufacturing company Ltd.
- MING-WEI TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE FET DEVICES, SYSTEMS, AND METHODS OF USING THE SAME FOR SE...
- Publication number 20170018626
- Publication date Jan 19, 2017
- Edico Genome, Corp.
- Paul Hoffman
- C12 - BIOCHEMISTRY BEER SPIRITS WINE VINEGAR MICROBIOLOGY ENZYMOLOGY MUTATION...
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SECURE CHIP WITH PHYSICALLY UNCLONABLE FUNCTION
- Publication number 20160284647
- Publication date Sep 29, 2016
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Differential Pair Sensing Circuit Structures
- Publication number 20150316503
- Publication date Nov 5, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Md M. Hoque
- G01 - MEASURING TESTING
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METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND THE SEMICONDUCTO...
- Publication number 20150084104
- Publication date Mar 26, 2015
- RENESAS ELECTRONICS CORPORATION
- Yuji ANDO
- H01 - BASIC ELECTRIC ELEMENTS
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NONPLANAR III-N TRANSISTORS WITH COMPOSITIONALLY GRADED SEMICONDUCT...
- Publication number 20150064859
- Publication date Mar 5, 2015
- lntel Corporation
- Han Wui THEN
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STRUCTURE FOR IMPROVED CONTACT RESISTANCE AND EXTENSION DIFFUSION C...
- Publication number 20150061010
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- International Business Machines Corporation
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NONPLANAR III-N TRANSISTORS WITH COMPOSITIONALLY GRADED SEMICONDUCT...
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- Publication date Jun 26, 2014
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
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ANTIFUSE OF SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20140124864
- Publication date May 8, 2014
- SK HYNIX INC.
- Yeong Eui HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET DEVICE
- Publication number 20140124774
- Publication date May 8, 2014
- Chee-Wee Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED CHARGE TRANSISTOR
- Publication number 20140097478
- Publication date Apr 10, 2014
- Infineon Technologies Austria AG
- Ralf SIEMIENIEC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING NANOGAP PATTERN, BIOSENSOR HAVING THE NANOGAP PAT...
- Publication number 20130200437
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- MICOBIOMED CO., LTD.
- Kwan Goo Rha
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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120018742
- Publication date Jan 26, 2012
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Masahiro Nishi
- H01 - BASIC ELECTRIC ELEMENTS
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SCHOTTKY BARRIER TUNNEL TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20110068326
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- Moon-Gyu JANG
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Nanodevice, Transistor Comprising the Nanodevice, Method for Manufa...
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- POSTECH ACADEMY-INDUSTRY FOUNDATION
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ENCAPSULATING AND TRANSFERRING LOW DIMENSIONAL STRUCTURES
- Publication number 20100012180
- Publication date Jan 21, 2010
- Sharp Kabushiki Kaisha
- Stephen Day
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Schottky barrier tunnel transistor and method for fabricating the same
- Publication number 20080121868
- Publication date May 29, 2008
- Electronics and Telecommunication Research Institute
- Moon-Gyu Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING VERTICAL CARBON NANOTUBE FIELD EFFECT TRANSI...
- Publication number 20080044954
- Publication date Feb 21, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- G11 - INFORMATION STORAGE
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SEMICONDUCTOR DEVICE
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- Publication date Nov 1, 2007
- Hidekatsu Onose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dispersed growth of nanotubes on a substrate
- Publication number 20070140946
- Publication date Jun 21, 2007
- Nanomix, Inc.
- Jean-Christophe P. Gabriel
- D01 - NATURAL OR ARTIFICIAL THREADS OR FIBRES SPINNING

Unipolar field-effect transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device with control electrodes provided in trenches o...

Heavily doped buried layer to reduce MOSFET off capacitance

High-electron-mobility transistor and manufacturing method thereof

Circuit structure

Manufacturing method for high-electron-mobility transistor

MIM capacitor containing negative capacitance material

High-electron-mobility transistor and manufacturing method thereof

Graphene FET devices, systems, and methods of using the same for se...

MIM capacitor formation in RMG module

Nonplanar III-N transistors with compositionally graded semiconduct...

Secure chip with physically unclonable function

MIM capacitor formation in RMG module

Differential pair sensing circuit structures

Nonplanar III-N transistors with compositionally graded semiconduct...

Antifuse of semiconductor device and method of fabricating the same

MOSFET device

Antifuse of semiconductor device and method of fabricating the same

Reduced charge transistor

Nonplanar III-N transistors with compositionally graded semiconduct...

Semiconductor devices with germanium-rich active layers and doped t...

Semiconductor device and method of manufacturing the same

Nanodevice, transistor comprising the nanodevice, method for manufa...

Method for fabricating Schottky barrier tunnel transistor

Vertical carbon nanotube field effect transistors and arrays

Methods of fabricating vertical carbon nanotube field effect transi...

Semiconductor device having local interconnection layer and etch st...

Method for producing solid-state imaging device

Semiconductor device having local interconnection layer and etch st...

2997634

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE CAPABLE OF RELEASING PROCESS CHARGE, AND METHO...

INDUCTORLESS CIRCUITS FOR CURRENT-VOLTAGE CONTROL AND REGULATION IN...

SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

STACKED SEMICONDUCTOR CHIP STRUCTURE AND ITS PROCESS

CIRCUIT STRUCTURE

HEAVILY DOPED BURIED LAYER TO REDUCE MOSFET OFF CAPACITANCE

MIM CAPACITOR CONTAINING NEGATIVE CAPACITANCE MATERIAL

HIGH-ELECTRON-MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF

HIGH-ELECTRON-MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF

HIGH-ELECTRON-MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF

GRAPHENE FET DEVICES, SYSTEMS, AND METHODS OF USING THE SAME FOR SE...

SECURE CHIP WITH PHYSICALLY UNCLONABLE FUNCTION

Differential Pair Sensing Circuit Structures

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND THE SEMICONDUCTO...

NONPLANAR III-N TRANSISTORS WITH COMPOSITIONALLY GRADED SEMICONDUCT...

STRUCTURE FOR IMPROVED CONTACT RESISTANCE AND EXTENSION DIFFUSION C...

NONPLANAR III-N TRANSISTORS WITH COMPOSITIONALLY GRADED SEMICONDUCT...

ANTIFUSE OF SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

MOSFET DEVICE

REDUCED CHARGE TRANSISTOR

METHOD OF FORMING NANOGAP PATTERN, BIOSENSOR HAVING THE NANOGAP PAT...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SCHOTTKY BARRIER TUNNEL TRANSISTOR AND METHOD FOR FABRICATING THE SAME

Nanodevice, Transistor Comprising the Nanodevice, Method for Manufa...

ENCAPSULATING AND TRANSFERRING LOW DIMENSIONAL STRUCTURES

Schottky barrier tunnel transistor and method for fabricating the same

METHODS OF FABRICATING VERTICAL CARBON NANOTUBE FIELD EFFECT TRANSI...

SEMICONDUCTOR DEVICE

Dispersed growth of nanotubes on a substrate