using a self aligned punch through stopper or threshold implant under the gate region

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CPC
H01L29/66537

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66537using a self aligned punch through stopper or threshold implant under the gate region

Industries

Patents Grantslast 30 patents

Information Patent Grant
Multi-gate device and method of fabrication thereof
- Patent number 11,942,548
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel stop and well dopant migration control implant for reduced...
- Patent number 11,869,956
- Issue date Jan 9, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage prevention structure and method
- Patent number 11,855,224
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ching-Wei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFet isolation structure and method for fabricating the same
- Patent number 11,804,484
- Issue date Oct 31, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of integrated circuit having decouple capacitance
- Patent number 11,756,959
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ching-Wei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate spacer structure and method of forming same
- Patent number 11,705,505
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Ting Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antifuse OTP structures with hybrid low-voltage devices
- Patent number 11,690,218
- Issue date Jun 27, 2023
- Zhuhai Chuangfeixin Technology Co., Ltd.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
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- Issue date May 23, 2023
- Renesas Electronics Corporation
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crown bulk for FinFET device
- Patent number 11,587,927
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET and manufacturing method of the same
- Patent number 11,588,021
- Issue date Feb 21, 2023
- Excelliance MOS Corporation
- Chu-Kuang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,575,010
- Issue date Feb 7, 2023
- Semiconductor Manufacturing International (Beijing) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate spacer structure and method of forming same
- Patent number 11,508,831
- Issue date Nov 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Ting Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,495,682
- Issue date Nov 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display system and method for forming an output buffer of a source...
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- Issue date Sep 6, 2022
- Vanguard International Semiconductor Corporation
- Yu-Lung Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device and method of fabrication thereof
- Patent number 11,437,513
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antifuse OTP structures with hybrid low-voltage devices
- Patent number 11,417,668
- Issue date Aug 16, 2022
- Zhuhai Chuangfeixin Technology Co., Ltd.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor manufacturing
- Patent number 11,367,782
- Issue date Jun 21, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,328,957
- Issue date May 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Wei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing laterally diffused metal oxide semiconduct...
- Patent number 11,329,153
- Issue date May 10, 2022
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Budong You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage prevention structure and method
- Patent number 11,264,508
- Issue date Mar 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ching-Wei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device and method for manufacturing same
- Patent number 11,264,497
- Issue date Mar 1, 2022
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,264,502
- Issue date Mar 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 11,264,244
- Issue date Mar 1, 2022
- Renesas Electronics Corporation
- Tatsuyoshi Mihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating medium-voltage transistors and correspondin...
- Patent number 11,183,505
- Issue date Nov 23, 2021
- STMicroelectronics (Rousset) SAS
- Franck Julien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High thermal budget compatible punch through stop integration using...
- Patent number 11,171,204
- Issue date Nov 9, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High thermal budget compatible punch through stop integration using...
- Patent number 11,152,460
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer fin structure
- Patent number 11,133,386
- Issue date Sep 28, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bwo-Ning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and a manufacturing method of a MOSFET with an element of...
- Patent number 11,121,235
- Issue date Sep 14, 2021
- National Tsing Hua University
- Chih-Fang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of integrated circuit having decouple capacitance
- Patent number 11,037,925
- Issue date Jun 15, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ching-Wei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for forming bulk FinFET with uniform channel h...
- Patent number 11,017,999
- Issue date May 25, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CHANNEL STOP AND WELL DOPANT MIGRATION CONTROL IMPLANT FOR REDUCED...
- Publication number 20240088262
- Publication date Mar 14, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MANUFACTURING
- Publication number 20230335615
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Spacer Structure and Method of Forming Same
- Publication number 20230307525
- Publication date Sep 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Ting Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20230253456
- Publication date Aug 10, 2023
- RENESAS ELECTRONICS CORPORATION
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, FABRICATION METHOD FOR SAME, AND ELECTRONIC D...
- Publication number 20230223444
- Publication date Jul 13, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STOP AND WELL DOPANT MIGRATION CONTROL IMPLANT FOR REDUCED...
- Publication number 20230095534
- Publication date Mar 30, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Channel Devices and Method with Anti-Punch Through Process
- Publication number 20230068668
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ko-Cheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Crown Bulk for FinFET Device
- Publication number 20220367459
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH EMBEDDE...
- Publication number 20220359763
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ting-Yeh CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20220352371
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Manufacturing
- Publication number 20220320313
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Antifuse OTP structures with hybrid low-voltage devices
- Publication number 20220278114
- Publication date Sep 1, 2022
- Zhuhai Chuangfeixin Technology Co., Ltd.,
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID FIELD-EFFECT TRANSISTOR
- Publication number 20220262904
- Publication date Aug 18, 2022
- Analog Devices International Unlimited Company
- Dennis A. Dempsey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20220254688
- Publication date Aug 11, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Wei PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20220181490
- Publication date Jun 9, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE PREVENTION STRUCTURE AND METHOD
- Publication number 20220181496
- Publication date Jun 9, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ching-Wei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF TRENCH MOSFET
- Publication number 20210343840
- Publication date Nov 4, 2021
- EXCELLIANCE MOS CORPORATION
- Chu-Kuang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method of Integrated Circuit Having Decouple Capacitance
- Publication number 20210305249
- Publication date Sep 30, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Ching-Wei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Antifuse OTP structures with hybrid low-voltage devices
- Publication number 20210288055
- Publication date Sep 16, 2021
- Zhuhai Chuangfeixin Technology Co., Ltd.,
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20210273096
- Publication date Sep 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20210273098
- Publication date Sep 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICE AND METHOD OF FABRICATION THEREOF
- Publication number 20210273100
- Publication date Sep 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210265217
- Publication date Aug 26, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Wei PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20210257459
- Publication date Aug 19, 2021
- Renesas Electronics Corporation
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20210257217
- Publication date Aug 19, 2021
- RENESAS ELECTRONICS CORPORATION
- Tatsuyoshi MIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE SAME
- Publication number 20210233907
- Publication date Jul 29, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Leakage Prevention Structure And Method
- Publication number 20210234047
- Publication date Jul 29, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Ching-Wei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF DOPANT DEACTIVATION UNDERNEATH GATE
- Publication number 20210234003
- Publication date Jul 29, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dhanyakumar Mahaveer SATHAIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET AND MANUFACTURING METHOD OF THE SAME
- Publication number 20210202701
- Publication date Jul 1, 2021
- EXCELLIANCE MOS CORPORATION
- Chu-Kuang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH-GATE CO-IMPLANT SPECIES TO CONTROL DOPANT PROFILE IN TRANSI...
- Publication number 20210193467
- Publication date Jun 24, 2021
- TEXAS INSTRUMENTS INCORPORATED
- MAHALINGAM NANDAKUMAR
- H01 - BASIC ELECTRIC ELEMENTS

using a self aligned punch through stopper or threshold implant under the gate region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Multi-gate device and method of fabrication thereof

Channel stop and well dopant migration control implant for reduced...

Leakage prevention structure and method

FinFet isolation structure and method for fabricating the same

Structure and method of integrated circuit having decouple capacitance

Gate spacer structure and method of forming same

Antifuse OTP structures with hybrid low-voltage devices

Semiconductor device and manufacturing method of the same

Crown bulk for FinFET device

Trench MOSFET and manufacturing method of the same

Semiconductor device and manufacturing method thereof

Gate spacer structure and method of forming same

Semiconductor device and method

Display system and method for forming an output buffer of a source...

Multi-gate device and method of fabrication thereof

Antifuse OTP structures with hybrid low-voltage devices

Semiconductor manufacturing

Semiconductor device and manufacturing method thereof

Method for manufacturing laterally diffused metal oxide semiconduct...

Leakage prevention structure and method

LDMOS device and method for manufacturing same

Semiconductor device and method

Method of manufacturing semiconductor device

Process for fabricating medium-voltage transistors and correspondin...

High thermal budget compatible punch through stop integration using...

High thermal budget compatible punch through stop integration using...

Multi-layer fin structure

Structure and a manufacturing method of a MOSFET with an element of...

Structure and method of integrated circuit having decouple capacitance

Method and structure for forming bulk FinFET with uniform channel h...

Patents Applicationslast 30 patents

CHANNEL STOP AND WELL DOPANT MIGRATION CONTROL IMPLANT FOR REDUCED...

SEMICONDUCTOR MANUFACTURING

Gate Spacer Structure and Method of Forming Same

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE, FABRICATION METHOD FOR SAME, AND ELECTRONIC D...

CHANNEL STOP AND WELL DOPANT MIGRATION CONTROL IMPLANT FOR REDUCED...

Multi-Channel Devices and Method with Anti-Punch Through Process

Crown Bulk for FinFET Device

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH EMBEDDE...

Semiconductor Device and Method

Semiconductor Manufacturing

Antifuse OTP structures with hybrid low-voltage devices

HYBRID FIELD-EFFECT TRANSISTOR

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Semiconductor Device and Method

LEAKAGE PREVENTION STRUCTURE AND METHOD

MANUFACTURING METHOD OF TRENCH MOSFET

Structure and Method of Integrated Circuit Having Decouple Capacitance

Antifuse OTP structures with hybrid low-voltage devices

Semiconductor Device and Method

Semiconductor Device and Method

MULTI-GATE DEVICE AND METHOD OF FABRICATION THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

FINFET ISOLATION STRUCTURE AND METHOD FOR FABRICATING THE SAME

Leakage Prevention Structure And Method

METHOD OF DOPANT DEACTIVATION UNDERNEATH GATE

TRENCH MOSFET AND MANUFACTURING METHOD OF THE SAME

THROUGH-GATE CO-IMPLANT SPECIES TO CONTROL DOPANT PROFILE IN TRANSI...