using diffusion into or out of a solid from or into a liquid phase

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H01L21/388

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/388using diffusion into or out of a solid from or into a liquid phase

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Patents Grantslast 30 patents

Information Patent Grant
Surface doping of nanostructures
- Patent number 10,249,808
- Issue date Apr 2, 2019
- The Regents of the University of California
- Ayaskanta Sahu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of producing a partly or completely semi-insulating or p-typ...
- Patent number 8,216,926
- Issue date Jul 10, 2012
- Commissariat a l'Energie Atomique
- Maurice Couchaud
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of selective post-growth tuning of an optical bandgap of a s...
- Patent number 7,151,061
- Issue date Dec 19, 2006
- Agency for Science, Technology and Research
- Gang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Intrinsic p-type HgCdTe using CdTe capping layer
- Patent number 6,114,738
- Issue date Sep 5, 2000
- DRS FPA, L.P.
- John Harold Tregilgas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing intrinsic p-type HgCdTe using CdTe capping layer
- Patent number 6,030,853
- Issue date Feb 29, 2000
- DRS FPA, L.P.
- John Harold Tregilgas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simultaneous formation of via hole and tube structures for GaAs mon...
- Patent number 4,927,784
- Issue date May 22, 1990
- Raytheon Company
- Thomas E. Kazior
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simultaneous formation of via hole and tub structures for GaAs mono...
- Patent number 4,807,022
- Issue date Feb 21, 1989
- Raytheon Company
- Thomas E. Kazior
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Core annihilation method of Hg.sub.1-x Cd.sub.x Te
- Patent number 4,684,415
- Issue date Aug 4, 1987
- Texas Instruments Incorporated
- John H. Tregilgas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making semiconductor integrated circuit device
- Patent number 4,219,369
- Issue date Aug 26, 1980
- Hitachi, Ltd.
- Katsumi Ogiue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion of donors into (Hg Cd) Te through use of Ga-Al alloy
- Patent number 4,089,713
- Issue date May 16, 1978
- Honeywell Inc.
- Eric Shanks Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lithium doped mercury cadmium telluride
- Patent number 4,087,294
- Issue date May 2, 1978
- Honeywell Inc.
- Eric S. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3858306
- Patent number 3,858,306
- Issue date Jan 7, 1975
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3745073
- Patent number 3,745,073
- Issue date Jul 10, 1973
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3670220
- Patent number 3,670,220
- Issue date Jun 13, 1972
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3520781
- Patent number 3,520,781
- Issue date Jul 14, 1970
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3386893
- Patent number 3,386,893
- Issue date Jun 4, 1968
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR

Patents Applicationslast 30 patents

Information Patent Application
CHEMICAL SENSOR ARRAYS FOR ODOR DETECTION
- Publication number 20150364340
- Publication date Dec 17, 2015
- EMPIRE TECHNOLOGY DEVELOPMENT LLC
- Masahiro UEDA
- G01 - MEASURING TESTING
Information Patent Application
METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR SENSITIVE FILM BASE...
- Publication number 20150325437
- Publication date Nov 12, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Dongmei LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Producing a Partly or Completely Semi-Insulating or P-Typ...
- Publication number 20100200850
- Publication date Aug 12, 2010
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Maurice Couchaud
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF SELECTIVE POST-GROWTH TUNING OF AN OPTICAL BANDGAP OF A S...
- Publication number 20070091954
- Publication date Apr 26, 2007
- Agency for Science, Technology and Research
- Gang LI
- H01 - BASIC ELECTRIC ELEMENTS

using diffusion into or out of a solid from or into a liquid phase

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Surface doping of nanostructures

Method of producing a partly or completely semi-insulating or p-typ...

Method of selective post-growth tuning of an optical bandgap of a s...

Intrinsic p-type HgCdTe using CdTe capping layer

Method of producing intrinsic p-type HgCdTe using CdTe capping layer

Simultaneous formation of via hole and tube structures for GaAs mon...

Simultaneous formation of via hole and tub structures for GaAs mono...

Core annihilation method of Hg.sub.1-x Cd.sub.x Te

Method of making semiconductor integrated circuit device

Diffusion of donors into (Hg Cd) Te through use of Ga-Al alloy

Lithium doped mercury cadmium telluride

3858306

3745073

3670220

3520781

3386893

Patents Applicationslast 30 patents

CHEMICAL SENSOR ARRAYS FOR ODOR DETECTION

METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR SENSITIVE FILM BASE...

Method of Producing a Partly or Completely Semi-Insulating or P-Typ...

METHOD OF SELECTIVE POST-GROWTH TUNING OF AN OPTICAL BANDGAP OF A S...