using diode elements

Industry

CPC
G11C17/06

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C17/00Read-only memories programmable only once Semi-permanent stores

Current Industry

G11C17/06using diode elements

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Anti-fuse memory cell circuit, array circuit and reading and writin...
- Patent number 11,887,682
- Issue date Jan 30, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Xin Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and electronic apparatus including the same
- Patent number 11,842,780
- Issue date Dec 12, 2023
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Mikio Oka
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit and method of operating same
- Patent number 11,791,005
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Array of integrated pixel and memory cells for deep in-sensor, in-m...
- Patent number 11,468,146
- Issue date Oct 11, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Akhilesh Jaiswal
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
One-time programmable memory device and fabrication method thereof
- Patent number 11,362,097
- Issue date Jun 14, 2022
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE
Information Patent Grant
Formation of stacked lateral semiconductor devices and the resultin...
- Patent number 10,978,297
- Issue date Apr 13, 2021
- TC Lab, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 10,971,237
- Issue date Apr 6, 2021
- Lapis Semiconductor Co., Ltd.
- Takashi Yamada
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
3D semiconductor device and system
- Patent number 10,388,568
- Issue date Aug 20, 2019
- Monolithic 3D Inc.
- Zvi Or-Bach
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Anti-fuse memory and semiconductor storage device
- Patent number 10,263,002
- Issue date Apr 16, 2019
- Floadia Corporation
- Yasuhiro Taniguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device, fabrication method and system
- Patent number 10,217,667
- Issue date Feb 26, 2019
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Offset-printing method for three-dimensional package
- Patent number 9,990,961
- Issue date Jun 5, 2018
- ChengDu HaiCun IP Technology LLC
- Guobiao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Offset-printing method for three-dimensional printed memory with mu...
- Patent number 9,990,960
- Issue date Jun 5, 2018
- HangZhou HaiCun Information Technology Co., Ltd
- Guobiao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Offset-printing method for three-dimensional printed memory
- Patent number 9,959,910
- Issue date May 1, 2018
- HangZhou HaiCun Information Technology Co., Ltd
- Guobiao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable device with integrated heat sink
- Patent number 9,767,915
- Issue date Sep 19, 2017
- Attopsemi Technology Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable memory devices using FinFET technology
- Patent number 9,754,679
- Issue date Sep 5, 2017
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional offset-printed memory with multiple bits-per-cell
- Patent number 9,741,448
- Issue date Aug 22, 2017
- HangZhou HaiChun Information Technology Co., Ltd.
- Guobiao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Antifuse with bypass diode and method thereof
- Patent number 9,552,890
- Issue date Jan 24, 2017
- NXP USA, INC.
- John M. Pigott
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device comprising page buffer and program verifi...
- Patent number 9,520,201
- Issue date Dec 13, 2016
- Samsung Electronics Co., Ltd.
- Dongku Kang
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory array using P-I-N diode select device and methods...
- Patent number 9,490,126
- Issue date Nov 8, 2016
- Cypress Semiconductor Corporation
- Seungmoo Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit and system of using junction diode as program selector for...
- Patent number 9,478,306
- Issue date Oct 25, 2016
- Attopsemi Technology Co., Ltd.
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable memory devices using FinFET technology
- Patent number 9,460,807
- Issue date Oct 4, 2016
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit and system of using junction diode as program selector for...
- Patent number 9,431,127
- Issue date Aug 30, 2016
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory cell without a dielectric antifuse having high-...
- Patent number 9,246,089
- Issue date Jan 26, 2016
- Sandisk 3D LLC
- Scott Brad Herner
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional nonvolatile memory and method of fabrication
- Patent number 9,214,243
- Issue date Dec 15, 2015
- Sandisk 3D LLC
- Mark G. Johnson
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device comprising page buffer and operation meth...
- Patent number 9,165,672
- Issue date Oct 20, 2015
- Samsung Electronics Co., Ltd.
- Dongku Kang
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable non-volatile memory
- Patent number 9,087,588
- Issue date Jul 21, 2015
- Rangduru Inc.
- Euipil Kwon
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit and system of using junction diode as program selector for...
- Patent number 9,070,437
- Issue date Jun 30, 2015
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal memory cell and semiconductor memory device based on d...
- Patent number 9,013,918
- Issue date Apr 21, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Qingqing Liang
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable diode array for high density OTP application
- Patent number 9,007,805
- Issue date Apr 14, 2015
- Broadcom Corporation
- Yong Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Blocking current leakage in a memory array
- Patent number 9,001,550
- Issue date Apr 7, 2015
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ONE-TIME PROGRAMMABLE MEMORY CELL AND METHOD FOR MANAGING THE LOGIC...
- Publication number 20240292610
- Publication date Aug 29, 2024
- STMicroelectronics International N.V.
- Pascal FORNARA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT AND METHOD OF OPERATING SAME
- Publication number 20230402117
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME PROGRAMMABLE MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20220181336
- Publication date Jun 9, 2022
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CIRCUIT AND METHOD OF OPERATING SAME
- Publication number 20210383883
- Publication date Dec 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE
- Publication number 20200365463
- Publication date Nov 19, 2020
- MonolithIC 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE
- Publication number 20200335399
- Publication date Oct 22, 2020
- MonolithIC 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20190228828
- Publication date Jul 25, 2019
- SHARP KABUSHIKI KAISHA
- Kaoru YAMAMOTO
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS TO PRODUCE A 3D SEMICONDUCTOR MEMORY DEVICE AND SYSTEM
- Publication number 20190164834
- Publication date May 30, 2019
- MonolithIC 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PRODUCING A 3D MEMORY DEVICE
- Publication number 20190148234
- Publication date May 16, 2019
- MonolithIC 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
3D SEMICONDUCTOR DEVICE AND SYSTEM
- Publication number 20190139827
- Publication date May 9, 2019
- MonolithIC 3D Inc.
- Zvi Or-Bach
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
3D SEMICONDUCTOR DEVICE AND SYSTEM
- Publication number 20190109049
- Publication date Apr 11, 2019
- MonolithIC 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
3D SEMICONDUCTOR DEVICE AND SYSTEM
- Publication number 20190074222
- Publication date Mar 7, 2019
- MonolithIC 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
3D SEMICONDUCTOR DEVICE AND SYSTEM
- Publication number 20190067109
- Publication date Feb 28, 2019
- MonolithIC 3D Inc.
- Zvi Or-Bach
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
3D SEMICONDUCTOR DEVICE AND SYSTEM
- Publication number 20190057903
- Publication date Feb 21, 2019
- MonolithIC 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
A 3D SEMICONDUCTOR DEVICE AND SYSTEM
- Publication number 20190027409
- Publication date Jan 24, 2019
- MonolithIC 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND SYSTEM
- Publication number 20190006240
- Publication date Jan 3, 2019
- MonolithIC 3D Inc.
- Zvi Or-Bach
- G11 - INFORMATION STORAGE
Information Patent Application
3D SEMICONDUCTOR DEVICE AND SYSTEM
- Publication number 20180350686
- Publication date Dec 6, 2018
- MonolithIC 3D Inc.
- Zvi Or-Bach
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
3D SEMICONDUCTOR DEVICE AND SYSTEM
- Publication number 20180350685
- Publication date Dec 6, 2018
- MonolithIC 3D Inc.
- Zvi Or-Bach
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
3D SEMICONDUCTOR DEVICE AND SYSTEM
- Publication number 20180350689
- Publication date Dec 6, 2018
- MonolithIC 3D Inc.
- Zvi Or-Bach
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
3D SEMICONDUCTOR DEVICE AND SYSTEM
- Publication number 20180350688
- Publication date Dec 6, 2018
- MonolithIC 3D Inc.
- Zvi Or-Bach
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
3D SEMICONDUCTOR DEVICE AND SYSTEM
- Publication number 20180301380
- Publication date Oct 18, 2018
- MonolithIC 3D Inc.
- Zvi Or-Bach
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
3D SEMICONDUCTOR DEVICE, FABRICATION METHOD AND SYSTEM
- Publication number 20180218946
- Publication date Aug 2, 2018
- MonolithIC 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three-Dimensional Offset-Printed Memory with Multiple Bits-Per-Cell
- Publication number 20170084348
- Publication date Mar 23, 2017
- HANGZHOU HAICUN INFORMATION TECHNOLOGY CO., LTD.
- Guobiao ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME PROGRAMMABLE MEMORY DEVICES USING FinFET TECHNOLOGY
- Publication number 20170062071
- Publication date Mar 2, 2017
- Attopsemi Technology Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
One-Time Programmable Device with Integrated Heat Sink
- Publication number 20170047126
- Publication date Feb 16, 2017
- Attopsemi Technology Co., LTD
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
Circuit and System of Using Junction Diode as Program Selector for...
- Publication number 20150294732
- Publication date Oct 15, 2015
- Shine C. Chung
- G11 - INFORMATION STORAGE
Information Patent Application
ANTIFUSE WITH BYPASS DIODE AND METHOD THEREOF
- Publication number 20150243365
- Publication date Aug 27, 2015
- FREESCALE SEMICONDUCTOR, INC.
- John M. PIGOTT
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE DIODE ARRAY FOR HIGH DENSITY OTP APPLICATION
- Publication number 20150078062
- Publication date Mar 19, 2015
- BROADCOM CORPORATION
- Yong LU
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL NONVOLATILE MEMORY AND METHOD OF FABRICATION
- Publication number 20140239248
- Publication date Aug 28, 2014
- SanDisk 3D LLC
- Mark G. Johnson
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE COMPRISING PAGE BUFFER AND OPERATION METH...
- Publication number 20140153329
- Publication date Jun 5, 2014
- Samsung Electronics Co., Ltd.
- Dongku KANG
- G11 - INFORMATION STORAGE

using diode elements

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Anti-fuse memory cell circuit, array circuit and reading and writin...

Semiconductor device and electronic apparatus including the same

Memory circuit and method of operating same

Array of integrated pixel and memory cells for deep in-sensor, in-m...

One-time programmable memory device and fabrication method thereof

Formation of stacked lateral semiconductor devices and the resultin...

Semiconductor device

3D semiconductor device and system

Anti-fuse memory and semiconductor storage device

3D semiconductor device, fabrication method and system

Offset-printing method for three-dimensional package

Offset-printing method for three-dimensional printed memory with mu...

Offset-printing method for three-dimensional printed memory

One-time programmable device with integrated heat sink

One-time programmable memory devices using FinFET technology

Three-dimensional offset-printed memory with multiple bits-per-cell

Antifuse with bypass diode and method thereof

Nonvolatile memory device comprising page buffer and program verifi...

Resistive memory array using P-I-N diode select device and methods...

Circuit and system of using junction diode as program selector for...

One-time programmable memory devices using FinFET technology

Circuit and system of using junction diode as program selector for...

Nonvolatile memory cell without a dielectric antifuse having high-...

Three-dimensional nonvolatile memory and method of fabrication

Nonvolatile memory device comprising page buffer and operation meth...

Programmable non-volatile memory

Circuit and system of using junction diode as program selector for...

Two-terminal memory cell and semiconductor memory device based on d...

Programmable diode array for high density OTP application

Blocking current leakage in a memory array

Patents Applicationslast 30 patents

ONE-TIME PROGRAMMABLE MEMORY CELL AND METHOD FOR MANAGING THE LOGIC...

MEMORY CIRCUIT AND METHOD OF OPERATING SAME

ONE-TIME PROGRAMMABLE MEMORY DEVICE AND FABRICATION METHOD THEREOF

MEMORY CIRCUIT AND METHOD OF OPERATING SAME

3D SEMICONDUCTOR DEVICE AND STRUCTURE

3D SEMICONDUCTOR DEVICE AND STRUCTURE

SEMICONDUCTOR DEVICE

METHODS TO PRODUCE A 3D SEMICONDUCTOR MEMORY DEVICE AND SYSTEM

METHOD FOR PRODUCING A 3D MEMORY DEVICE

3D SEMICONDUCTOR DEVICE AND SYSTEM

3D SEMICONDUCTOR DEVICE AND SYSTEM

3D SEMICONDUCTOR DEVICE AND SYSTEM

3D SEMICONDUCTOR DEVICE AND SYSTEM

3D SEMICONDUCTOR DEVICE AND SYSTEM

A 3D SEMICONDUCTOR DEVICE AND SYSTEM

3D SEMICONDUCTOR DEVICE AND SYSTEM

3D SEMICONDUCTOR DEVICE AND SYSTEM

3D SEMICONDUCTOR DEVICE AND SYSTEM

3D SEMICONDUCTOR DEVICE AND SYSTEM

3D SEMICONDUCTOR DEVICE AND SYSTEM

3D SEMICONDUCTOR DEVICE AND SYSTEM

3D SEMICONDUCTOR DEVICE, FABRICATION METHOD AND SYSTEM

Three-Dimensional Offset-Printed Memory with Multiple Bits-Per-Cell

ONE-TIME PROGRAMMABLE MEMORY DEVICES USING FinFET TECHNOLOGY

One-Time Programmable Device with Integrated Heat Sink

Circuit and System of Using Junction Diode as Program Selector for...

ANTIFUSE WITH BYPASS DIODE AND METHOD THEREOF

PROGRAMMABLE DIODE ARRAY FOR HIGH DENSITY OTP APPLICATION

THREE-DIMENSIONAL NONVOLATILE MEMORY AND METHOD OF FABRICATION

NONVOLATILE MEMORY DEVICE COMPRISING PAGE BUFFER AND OPERATION METH...