using silicon implanted buried insulating layers, e.g. oxide layers

Industry

CPC
H01L21/76243

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/76243using silicon implanted buried insulating layers, e.g. oxide layers

Industries

Patents Grantslast 30 patents

Information Patent Grant
Backside electrical contacts to buried power rails
- Patent number 12,136,655
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency silicon on insulator structure with superior perfor...
- Patent number 11,942,360
- Issue date Mar 26, 2024
- GlobalWafers Co., Ltd.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency silicon on insulator wafer platform with superior p...
- Patent number 11,887,885
- Issue date Jan 30, 2024
- GlobalWafers Co., Ltd.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FDSOI device structure and preparation method thereof
- Patent number 11,855,212
- Issue date Dec 26, 2023
- Shanghai Huali Integrated Circuit Corporation
- Zhonghua Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with an air gap
- Patent number 11,848,253
- Issue date Dec 19, 2023
- United Microelectronics Corp.
- Ching-Pin Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolator
- Patent number 11,817,346
- Issue date Nov 14, 2023
- Kabushiki Kaisha Toshiba
- Akira Ishiguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing body-source-tied SOI transistor
- Patent number 11,756,823
- Issue date Sep 12, 2023
- Newport Fab, LLC
- Allan K Calvo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 11,721,576
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Te-Hsin Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of radiofrequency device including mold compou...
- Patent number 11,715,709
- Issue date Aug 1, 2023
- United Microelectronics Corp.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having buried gate ele...
- Patent number 11,670,537
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Byung-jae Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation method to enable continuous channel layer
- Patent number 11,664,419
- Issue date May 30, 2023
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing FDSOI
- Patent number 11,640,923
- Issue date May 2, 2023
- Shanghai Huali Integrated Circuit Corporation
- Tianpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET isolation structure
- Patent number 11,637,204
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency silicon on insulator structure with superior perfor...
- Patent number 11,626,318
- Issue date Apr 11, 2023
- GlobalWafers Co., Ltd.
- Michael R. Seacrist
- C30 - CRYSTAL GROWTH
Information Patent Grant
Isolator
- Patent number 11,615,981
- Issue date Mar 28, 2023
- Kabushiki Kaisha Toshiba
- Tatsuhiro Oda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer stack of semiconductor-on-insulator type, associated pro...
- Patent number 11,610,806
- Issue date Mar 21, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor structure
- Patent number 11,587,824
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Hsiang Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Body-source-tied semiconductor-on-insulator (SOI) transistor
- Patent number 11,581,215
- Issue date Feb 14, 2023
- Newport Fab, LLC
- Allan K Calvo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FDSOI device structure and preparation method thereof
- Patent number 11,569,385
- Issue date Jan 31, 2023
- Shanghai Huali Integrated Circuit Corporation
- Zhonghua Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet (NS) and fin field-effect transistor (FinFET) hybrid inte...
- Patent number 11,545,483
- Issue date Jan 3, 2023
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency silicon on insulator wafer platform with superior p...
- Patent number 11,532,501
- Issue date Dec 20, 2022
- GlobalWafers Co., Ltd.
- Michael R. Seacrist
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor on insulator structure comprising a buried high resis...
- Patent number 11,508,612
- Issue date Nov 22, 2022
- GlobalWafers Co., Ltd.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removable structure and removal method using the structure
- Patent number 11,424,156
- Issue date Aug 23, 2022
- Soitec
- Didier Landru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer-scale fabrication of optical apparatus
- Patent number 11,391,888
- Issue date Jul 19, 2022
- Cisco Technology, Inc.
- Sandeep Razdan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiofrequency device and manufacturing method thereof
- Patent number 11,362,048
- Issue date Jun 14, 2022
- United Microelectronics Corp.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
D-type flip-flop circuit
- Patent number 11,277,122
- Issue date Mar 15, 2022
- National University Corporation Kyoto Institute of Technology
- Kazutoshi Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 11,264,244
- Issue date Mar 1, 2022
- Renesas Electronics Corporation
- Tatsuyoshi Mihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing SOI wafer
- Patent number 11,244,851
- Issue date Feb 8, 2022
- Shin-Etsu Handotai Co., Ltd.
- Hiroji Aga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral double-diffused metal oxide semiconductor component and man...
- Patent number 11,227,948
- Issue date Jan 18, 2022
- CSMC Technologies FAB2 Co., Ltd.
- Nailong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with an air gap
- Patent number 11,205,609
- Issue date Dec 21, 2021
- United Microelectronics Corp.
- Ching-Pin Hsu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE OF HIGH-RESISTIVITY SILICON-ON-INSULATOR EMBEDDED WITH CH...
- Publication number 20240387171
- Publication date Nov 21, 2024
- ZING SEMICONDUCTOR CORPORATION
- Xing WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE ISOLATION STRUCTURE AND MANUFACTURING METHOD THEREOF, AND SE...
- Publication number 20240379651
- Publication date Nov 14, 2024
- Huawei Digital Power Technologies Co., Ltd.
- Peng GOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
- Publication number 20240355669
- Publication date Oct 24, 2024
- TOKYO ELECTRON LIMITED
- Yasutaka MIZOMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR BASED ON COMPACT DRAIN AND HETERO-MATERIAL STRUCTURE
- Publication number 20240322031
- Publication date Sep 26, 2024
- IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Jea Gun PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEAT SINK FOR SOI
- Publication number 20240297091
- Publication date Sep 5, 2024
- Qorvo US, Inc.
- Baker Scott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR BONDING SEMICONDUCTOR DEVICES
- Publication number 20240243006
- Publication date Jul 18, 2024
- TOKYO ELECTRON LIMITED
- Scott Lefevre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATOR
- Publication number 20240105592
- Publication date Mar 28, 2024
- Kabushiki Kaisha Toshiba
- Masaki YAMADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SOI WAFER
- Publication number 20240038581
- Publication date Feb 1, 2024
- Korea Advanced Institute of Science and Technology
- Jungchul LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI Structures with Carbon in Body Regions for Improved RF-SOI Swit...
- Publication number 20230360962
- Publication date Nov 9, 2023
- Newport Fab, LLC dba Tower Semiconductor Newport Beach
- Kurt Moen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20230352339
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Te-Hsin Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Structure of MOS Transistors Having Different Working Vo...
- Publication number 20230335641
- Publication date Oct 19, 2023
- Shanghai Huali Intergrated Circuit Corporation
- Qi Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET ISOLATION STRUCTURE
- Publication number 20230261111
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Cheng CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR SIMULTANEOUS GENERATION OF A TRAP-RICH LAYER AND A BOX...
- Publication number 20230245922
- Publication date Aug 3, 2023
- pSemi Corporation
- Sebastien KOUASSI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20230223276
- Publication date Jul 13, 2023
- MEDIATEK INC.
- Po-Chao TSAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFOR...
- Publication number 20230215759
- Publication date Jul 6, 2023
- GLOBALWAFERS CO., LTD.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SOI WAFER
- Publication number 20230154761
- Publication date May 18, 2023
- Shin-Etsu Handotai Co., Ltd.
- Hiroji AGA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS OF SURFACE TREATMENT OF SOI WAFER
- Publication number 20230133916
- Publication date May 4, 2023
- ZING SEMICONDUCTOR CORPORATION
- Xing WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Body-Source-Tied Transistor
- Publication number 20230128785
- Publication date Apr 27, 2023
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Allan K. Calvo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FDSOI DEVICE STRUCTURE AND PREPARATION METHOD THEREOF
- Publication number 20230126031
- Publication date Apr 27, 2023
- Shanghai Huali Integrated Circuit Corporation
- Zhonghua LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE ELECTRICAL CONTACTS TO BURIED POWER RAILS
- Publication number 20230093101
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Ruilong XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ON INSULATOR STRUCTURE COMPRISING A BURIED HIGH RESIS...
- Publication number 20230072964
- Publication date Mar 9, 2023
- GLOBALWAFERS CO., LTD.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY SILICON ON INSULATOR WAFER PLATFORM WITH SUPERIOR P...
- Publication number 20230062816
- Publication date Mar 2, 2023
- GLOBALWAFERS CO., LTD.
- Michael R. Seacrist
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial Growth Method for FDSOI Hybrid Region
- Publication number 20220415707
- Publication date Dec 29, 2022
- Shanghai Huali Integrated Circuit Corporation
- Yongyue Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Manufacturing Body-Source-Tied SOI Transistor
- Publication number 20220352007
- Publication date Nov 3, 2022
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Allan K. Calvo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR HYDROPHILICALLY BONDING SUBSTRATES
- Publication number 20220319910
- Publication date Oct 6, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Vincent Larrey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING FDSOI
- Publication number 20220310443
- Publication date Sep 29, 2022
- Shanghai Huali Integrated Circuit Corporation
- Tianpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20220238371
- Publication date Jul 28, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Te-Hsin Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF RADIOFREQUENCY DEVICE
- Publication number 20220230975
- Publication date Jul 21, 2022
- UNITED MICROELECTRONICS CORP.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolation Method To Enable Continuous Channel Layer
- Publication number 20220109045
- Publication date Apr 7, 2022
- Applied Materials, Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FDSOI DEVICE STRUCTURE AND PREPARATION METHOD THEREOF
- Publication number 20220093799
- Publication date Mar 24, 2022
- Shanghai Huali Integrated Circuit Corporation
- Zhonghua LI
- H01 - BASIC ELECTRIC ELEMENTS

using silicon implanted buried insulating layers, e.g. oxide layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Backside electrical contacts to buried power rails

Radio frequency silicon on insulator structure with superior perfor...

Radio frequency silicon on insulator wafer platform with superior p...

FDSOI device structure and preparation method thereof

Semiconductor structure with an air gap

Isolator

Method for manufacturing body-source-tied SOI transistor

Semiconductor devices and methods of manufacturing thereof

Manufacturing method of radiofrequency device including mold compou...

Method of manufacturing semiconductor device having buried gate ele...

Isolation method to enable continuous channel layer

Method for manufacturing FDSOI

FinFET isolation structure

Radio frequency silicon on insulator structure with superior perfor...

Isolator

Multilayer stack of semiconductor-on-insulator type, associated pro...

Method for manufacturing semiconductor structure

Body-source-tied semiconductor-on-insulator (SOI) transistor

FDSOI device structure and preparation method thereof

Nanosheet (NS) and fin field-effect transistor (FinFET) hybrid inte...

Radio frequency silicon on insulator wafer platform with superior p...

Semiconductor on insulator structure comprising a buried high resis...

Removable structure and removal method using the structure

Wafer-scale fabrication of optical apparatus

Radiofrequency device and manufacturing method thereof

D-type flip-flop circuit

Method of manufacturing semiconductor device

Method for manufacturing SOI wafer

Lateral double-diffused metal oxide semiconductor component and man...

Semiconductor structure with an air gap

Patents Applicationslast 30 patents

STRUCTURE OF HIGH-RESISTIVITY SILICON-ON-INSULATOR EMBEDDED WITH CH...

DEVICE ISOLATION STRUCTURE AND MANUFACTURING METHOD THEREOF, AND SE...

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

TRANSISTOR BASED ON COMPACT DRAIN AND HETERO-MATERIAL STRUCTURE

HEAT SINK FOR SOI

SYSTEMS AND METHODS FOR BONDING SEMICONDUCTOR DEVICES

ISOLATOR

METHOD OF MANUFACTURING SOI WAFER

SOI Structures with Carbon in Body Regions for Improved RF-SOI Swit...

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Integrated Structure of MOS Transistors Having Different Working Vo...

FINFET ISOLATION STRUCTURE

METHODS FOR SIMULTANEOUS GENERATION OF A TRAP-RICH LAYER AND A BOX...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

RADIO FREQUENCY SILICON ON INSULATOR STRUCTURE WITH SUPERIOR PERFOR...

METHOD FOR MANUFACTURING SOI WAFER

PROCESS OF SURFACE TREATMENT OF SOI WAFER

Body-Source-Tied Transistor

FDSOI DEVICE STRUCTURE AND PREPARATION METHOD THEREOF

BACKSIDE ELECTRICAL CONTACTS TO BURIED POWER RAILS

SEMICONDUCTOR ON INSULATOR STRUCTURE COMPRISING A BURIED HIGH RESIS...

RADIO FREQUENCY SILICON ON INSULATOR WAFER PLATFORM WITH SUPERIOR P...

Epitaxial Growth Method for FDSOI Hybrid Region

Method For Manufacturing Body-Source-Tied SOI Transistor

PROCESS FOR HYDROPHILICALLY BONDING SUBSTRATES

METHOD FOR MANUFACTURING FDSOI

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

MANUFACTURING METHOD OF RADIOFREQUENCY DEVICE

Isolation Method To Enable Continuous Channel Layer

FDSOI DEVICE STRUCTURE AND PREPARATION METHOD THEREOF