Vertical isolation by selective deposition of single crystal silicon

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H01L21/76278

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/76278Vertical isolation by selective deposition of single crystal silicon

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices
- Patent number 11,600,577
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated semiconductor layer over buried isolation layer
- Patent number 10,886,164
- Issue date Jan 5, 2021
- Texas Instruments Incorporated
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices
- Patent number 10,811,255
- Issue date Oct 20, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate structure and semiconductor device and meth...
- Patent number 10,658,228
- Issue date May 19, 2020
- Vanguard International Semiconductor Corporation
- Chih-Hung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor device
- Patent number 10,580,864
- Issue date Mar 3, 2020
- United Microelectronics Corp.
- Yu-Cheng Tung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated semiconductor layer in bulk wafer by localized silicon epi...
- Patent number 10,516,019
- Issue date Dec 24, 2019
- Texas Instruments Incorporated
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated semiconductor layer in bulk wafer by localized silicon epi...
- Patent number 10,032,863
- Issue date Jul 24, 2018
- Texas Instruments Incorporated
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated semiconductor layer over buried isolation layer
- Patent number 9,865,498
- Issue date Jan 9, 2018
- Texas Instruments Incorporated
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated semiconductor layer over buried isolation layer
- Patent number 9,472,571
- Issue date Oct 18, 2016
- Texas Instruments Incorporated
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated semiconductor layer in bulk wafer by localized silicon epi...
- Patent number 9,330,959
- Issue date May 3, 2016
- Texas Instruments Incorporated
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assist features for epitaxial growth
- Patent number 8,741,743
- Issue date Jun 3, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Omar Zia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage consistency and effective width in same-substrate...
- Patent number 7,892,939
- Issue date Feb 22, 2011
- Infineon Technologies AG
- Roland Hampp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using partial SOI substrate and manufacturing...
- Patent number 7,439,112
- Issue date Oct 21, 2008
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with active regions having different...
- Patent number 7,354,806
- Issue date Apr 8, 2008
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using partial SOI substrate and manufacturing...
- Patent number 7,112,822
- Issue date Sep 26, 2006
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin silicon-on-insulator and strained-silicon-direct-on-insu...
- Patent number 7,098,508
- Issue date Aug 29, 2006
- International Business Machines Corporation
- Meikei Ieong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow self isolated doped implanted silicon process
- Patent number 7,087,503
- Issue date Aug 8, 2006
- National Semiconductor Corporation
- Kamesh Gadepally
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of partial SOI wafer, semiconductor device usi...
- Patent number 7,071,039
- Issue date Jul 4, 2006
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow self isolated doped implanted silicon process
- Patent number 6,908,833
- Issue date Jun 21, 2005
- National Semiconductor Corporation
- Kamesh Gadepally
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using partial SOI substrate and manufacturing...
- Patent number 6,855,976
- Issue date Feb 15, 2005
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual silicon-on-insulator device wafer die
- Patent number 6,849,928
- Issue date Feb 1, 2005
- Chartered Semiconductor Manufacturing, Ltd.
- Randall Cher Liang Cha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin silicon-on-insulator and strained-silicon-direct-on-insu...
- Patent number 6,815,278
- Issue date Nov 9, 2004
- International Business Machines Corporation
- Meikei Ieong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate and its production method, semiconductor de...
- Patent number 6,768,175
- Issue date Jul 27, 2004
- Asahi Kasei Kabushiki Kaisha
- Takashi Morishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device substrates with selective epitaxial growt...
- Patent number 6,727,567
- Issue date Apr 27, 2004
- Agere Systems Inc.
- John Joseph Bastek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing an isolated-gate transistor with an archi...
- Patent number 6,656,782
- Issue date Dec 2, 2003
- STMicroelectronics S.A.
- Thomas Skotnicki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI hybrid structure with selective epitaxial growth of silicon
- Patent number 6,635,543
- Issue date Oct 21, 2003
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,635,952
- Issue date Oct 21, 2003
- Kabushiki Kaisha Toshiba
- Kazumi Inoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having an isolation structure located under a sou...
- Patent number 6,630,699
- Issue date Oct 7, 2003
- Lucent Technologies, Inc.
- Ian Wylie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a silicon-on-insulator system with thin semic...
- Patent number 6,593,204
- Issue date Jul 15, 2003
- STMicroelectronics S.A.
- Hervé Jaouen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual silicon-on-insulator device wafer die
- Patent number 6,558,994
- Issue date May 6, 2003
- Chartered Semiconductors Maufacturing Ltd.
- Randall Cher Liang Cha
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING LOCALIZED SEMICONDUCTOR-ON-INSULATO...
- Publication number 20240371943
- Publication date Nov 7, 2024
- ATOMERA INCORPORATED
- DONGHUN KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20210043454
- Publication date Feb 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE STRUCTURE AND SEMICONDUCTOR DEVICE AND METH...
- Publication number 20200020573
- Publication date Jan 16, 2020
- Vanguard International Semiconductor Corporation
- Chih-Hung LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR DEVICE
- Publication number 20180308933
- Publication date Oct 25, 2018
- UNITED MICROELECTRONICS CORP.
- Yu-Cheng Tung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolated Semiconductor Layer Over Buried Isolation Layer
- Publication number 20180096882
- Publication date Apr 5, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20170278928
- Publication date Sep 28, 2017
- UNITED MICROELECTRONICS CORP.
- Yu-Cheng Tung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolated Semiconductor Layer Over Buried Isolation Layer
- Publication number 20160379866
- Publication date Dec 29, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATED SEMICONDUCTOR LAYER IN BULK WAFER BY LOCALIZED SILICON EPI...
- Publication number 20150294902
- Publication date Oct 15, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATED SEMICONDUCTOR LAYER OVER BURIED ISOLATION LAYER
- Publication number 20150294983
- Publication date Oct 15, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Daniel Nelson Carothers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A SEMICONDUCTOR LAYER HAVING AT LEAST TWO DIFFEREN...
- Publication number 20140370666
- Publication date Dec 18, 2014
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
- Maud VINET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Threshold Voltage Consistency and Effective Width in Same-Substrate...
- Publication number 20090227086
- Publication date Sep 10, 2009
- Roland Hampp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated assist features for epitaxial growth
- Publication number 20080166859
- Publication date Jul 10, 2008
- Freescale Semiconductor, Inc.
- Omar Zia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH ACTIVE REGIONS HAVING DIFFERENT...
- Publication number 20080142852
- Publication date Jun 19, 2008
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device using partial SOI substrate and manufacturing...
- Publication number 20060273330
- Publication date Dec 7, 2006
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH ACTIVE REGIONS HAVING DIFFERENT...
- Publication number 20060060925
- Publication date Mar 23, 2006
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device using partial SOI substrate and manufacturing...
- Publication number 20050093066
- Publication date May 5, 2005
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra-thin silicon-on-insulator and strained-silicon-direct-on-insu...
- Publication number 20050045995
- Publication date Mar 3, 2005
- International Business Machines Corporation
- Meikei Ieong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method of partial SOI wafer, semiconductor device usi...
- Publication number 20030146488
- Publication date Aug 7, 2003
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device using partial SOI substrate and manufacturing...
- Publication number 20030122124
- Publication date Jul 3, 2003
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual silicon-on-insulator device wafer die
- Publication number 20030107083
- Publication date Jun 12, 2003
- Randall Cher Liang Cha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI hybrid structure with selective epitaxial growth of silicon
- Publication number 20030104658
- Publication date Jun 5, 2003
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20020140115
- Publication date Oct 3, 2002
- Kabushiki Kaisha Toshiba
- Kazumi Inoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for manufacturing an isolated-gate transistor with an archi...
- Publication number 20020135020
- Publication date Sep 26, 2002
- STMicroelectronics S.A.
- Thomas Skotnicki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual silicon-on-insulator device wafer die
- Publication number 20020127816
- Publication date Sep 12, 2002
- Randall Cher Liang Cha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacture of dielectrically isolated integrated circuits
- Publication number 20020092462
- Publication date Jul 18, 2002
- John Joseph Bastek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a silicon-on-insulator system with thin semic...
- Publication number 20020019083
- Publication date Feb 14, 2002
- STMicroelectronics S.A.
- Herve Jaouen
- H01 - BASIC ELECTRIC ELEMENTS

Vertical isolation by selective deposition of single crystal silicon

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor devices

Isolated semiconductor layer over buried isolation layer

Methods of forming semiconductor devices

Semiconductor substrate structure and semiconductor device and meth...

Method of forming semiconductor device

Isolated semiconductor layer in bulk wafer by localized silicon epi...

Isolated semiconductor layer in bulk wafer by localized silicon epi...

Isolated semiconductor layer over buried isolation layer

Isolated semiconductor layer over buried isolation layer

Isolated semiconductor layer in bulk wafer by localized silicon epi...

Integrated assist features for epitaxial growth

Threshold voltage consistency and effective width in same-substrate...

Semiconductor device using partial SOI substrate and manufacturing...

Semiconductor device structure with active regions having different...

Semiconductor device using partial SOI substrate and manufacturing...

Ultra-thin silicon-on-insulator and strained-silicon-direct-on-insu...

Shallow self isolated doped implanted silicon process

Manufacturing method of partial SOI wafer, semiconductor device usi...

Shallow self isolated doped implanted silicon process

Semiconductor device using partial SOI substrate and manufacturing...

Dual silicon-on-insulator device wafer die

Ultra-thin silicon-on-insulator and strained-silicon-direct-on-insu...

Semiconductor substrate and its production method, semiconductor de...

Integrated circuit device substrates with selective epitaxial growt...

Process for manufacturing an isolated-gate transistor with an archi...

SOI hybrid structure with selective epitaxial growth of silicon

Semiconductor device

Transistor device having an isolation structure located under a sou...

Method of fabricating a silicon-on-insulator system with thin semic...

Dual silicon-on-insulator device wafer die

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES INCLUDING LOCALIZED SEMICONDUCTOR-ON-INSULATO...

SEMICONDUCTOR DEVICES

SEMICONDUCTOR SUBSTRATE STRUCTURE AND SEMICONDUCTOR DEVICE AND METH...

METHOD OF FORMING SEMICONDUCTOR DEVICE

Isolated Semiconductor Layer Over Buried Isolation Layer

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

Isolated Semiconductor Layer Over Buried Isolation Layer

ISOLATED SEMICONDUCTOR LAYER IN BULK WAFER BY LOCALIZED SILICON EPI...

ISOLATED SEMICONDUCTOR LAYER OVER BURIED ISOLATION LAYER

METHOD OF MAKING A SEMICONDUCTOR LAYER HAVING AT LEAST TWO DIFFEREN...

Threshold Voltage Consistency and Effective Width in Same-Substrate...

Integrated assist features for epitaxial growth

SEMICONDUCTOR DEVICE STRUCTURE WITH ACTIVE REGIONS HAVING DIFFERENT...

Semiconductor device using partial SOI substrate and manufacturing...

SEMICONDUCTOR DEVICE STRUCTURE WITH ACTIVE REGIONS HAVING DIFFERENT...

Semiconductor device using partial SOI substrate and manufacturing...

Ultra-thin silicon-on-insulator and strained-silicon-direct-on-insu...

Manufacturing method of partial SOI wafer, semiconductor device usi...

Semiconductor device using partial SOI substrate and manufacturing...

Dual silicon-on-insulator device wafer die

SOI hybrid structure with selective epitaxial growth of silicon

Semiconductor device

Process for manufacturing an isolated-gate transistor with an archi...

Dual silicon-on-insulator device wafer die

Manufacture of dielectrically isolated integrated circuits

Method of fabricating a silicon-on-insulator system with thin semic...