Vertical transistors

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H01L29/7788

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7788Vertical transistors

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Three dimensional vertically structured electronic devices
- Patent number 12,170,330
- Issue date Dec 17, 2024
- Lawrence Livermore National Security, LLC
- Adam Conway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,154,980
- Issue date Nov 26, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor
- Patent number 12,136,667
- Issue date Nov 5, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Blend Mohamad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for fabrication of a vertical fin-based field eff...
- Patent number 12,125,914
- Issue date Oct 22, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure of an electronic circuit having a semiconductor device
- Patent number 12,094,964
- Issue date Sep 17, 2024
- NaMLab gGmbH
- Stefan Schmult
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,087,762
- Issue date Sep 10, 2024
- Panasonic Holdings Corporation
- Daisuke Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of semiconductor arrangement comprising semiconductor column
- Patent number 12,074,220
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-shaped semiconductor device, fabrication method, and applicatio...
- Patent number 12,040,356
- Issue date Jul 16, 2024
- GUANGDONG ZHINENG TECHNOLOGY CO., LTD.
- Zilan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Core-shell nanofin vertical switch and high-voltage switching
- Patent number 12,009,418
- Issue date Jun 11, 2024
- GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY O...
- Kristine Ann Bertness
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate transistor device and method of operating
- Patent number 12,003,231
- Issue date Jun 4, 2024
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Half-bridge circuit including integrated level shifter transistor
- Patent number 12,002,804
- Issue date Jun 4, 2024
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical type transistor, inverter including the same, and vertical...
- Patent number 12,002,882
- Issue date Jun 4, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 11,990,542
- Issue date May 21, 2024
- Panasonic Holdings Corporation
- Daisuke Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multichannel transistor
- Patent number 11,978,792
- Issue date May 7, 2024
- Visic Technologies Ltd.
- Gregory Bunin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode structure for vertical group III-V device
- Patent number 11,908,905
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yao-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polarization controlled transistor
- Patent number 11,848,371
- Issue date Dec 19, 2023
- Xerox Corporation
- Thomas Wunderer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,777,023
- Issue date Oct 3, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Weixing Du
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional vertically structured electronic devices
- Patent number 11,742,424
- Issue date Aug 29, 2023
- Lawrence Livermore National Security, LLC
- Adam Conway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for fabrication of a vertical fin-based field eff...
- Patent number 11,735,671
- Issue date Aug 22, 2023
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride substrate, method of making, and method of use
- Patent number 11,705,322
- Issue date Jul 18, 2023
- SLT TECHNOLOGIES, INC.
- Wenkan Jiang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Heterostructure of an electronic circuit having a semiconductor device
- Patent number 11,699,749
- Issue date Jul 11, 2023
- NaMLab gGmbH
- Stefan Schmult
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical diode in stacked transistor architecture
- Patent number 11,616,056
- Issue date Mar 28, 2023
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,563,115
- Issue date Jan 24, 2023
- Kabushiki Kaisha Toshiba
- Matthew David Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical type transistor, inverter including the same, and vertical...
- Patent number 11,563,116
- Issue date Jan 24, 2023
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor, method for manufacturing same, and nitride...
- Patent number 11,549,172
- Issue date Jan 10, 2023
- Japan Science and Technology Agency
- Hiroshi Fujioka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High electron mobility transistor (HEMT) devices and methods
- Patent number 11,552,189
- Issue date Jan 10, 2023
- STMicroelectronics S.r.l.
- Davide Giuseppe Patti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation to control formation of MOSFET trench-bottom oxide
- Patent number 11,527,637
- Issue date Dec 13, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 11,515,412
- Issue date Nov 29, 2022
- Panasonic Holdings Corporation
- Shinji Ujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and fabrication method thereof
- Patent number 11,502,177
- Issue date Nov 15, 2022
- United Microelectronics Corp.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and fabrication method thereof
- Patent number 11,489,048
- Issue date Nov 1, 2022
- United Microelectronics Corp.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
A VERTICAL HEMT, AN ELECTRICAL CIRCUIT, AND A METHOD FOR PRODUCING...
- Publication number 20250040175
- Publication date Jan 30, 2025
- Epinovatech AB
- Martin Andreas Olsson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF
- Publication number 20240372006
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR BASED ON COMPACT DRAIN AND HETERO-MATERIAL STRUCTURE
- Publication number 20240322031
- Publication date Sep 26, 2024
- IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Jea Gun PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE GATE TRANSISTOR DEVICE AND METHOD OF OPERATING
- Publication number 20240275379
- Publication date Aug 15, 2024
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240266431
- Publication date Aug 8, 2024
- Panasonic Holdings Corporation
- Daisuke SHIBATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20240222490
- Publication date Jul 4, 2024
- GUANGDONG ZHINENG TECHNOLOGIES, CO. LTD.
- Zilan LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20240136424
- Publication date Apr 25, 2024
- STMicroelectronics (Rousset) SAS
- Loic BOURGUINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF Power Transistor Having Off-Axis Layout
- Publication number 20240128368
- Publication date Apr 18, 2024
- Microwave Technology Inc.
- Howard J. Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE W...
- Publication number 20240128133
- Publication date Apr 18, 2024
- ROBERT BOSCH GmbH
- Jens Baringhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREOF
- Publication number 20240120374
- Publication date Apr 11, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20240105812
- Publication date Mar 28, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Chao YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20240055509
- Publication date Feb 15, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Chao YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-HETEROJUNCTION SCHOTTKY DIODE
- Publication number 20240030356
- Publication date Jan 25, 2024
- The Penn State Research Foundation
- Sang-Woo Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH 2-DIMENSIONAL ELECTRON GAS CHANNELS
- Publication number 20240006502
- Publication date Jan 4, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FABRICATION OF A VERTICAL FIN-BASED FIELD EFF...
- Publication number 20230411525
- Publication date Dec 21, 2023
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20230387288
- Publication date Nov 30, 2023
- Panasonic Holdings Corporation
- Hiroyuki HANDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A LATERAL SURFACE GATE VERTICAL FIELD EFFECT TRANSISTOR WITH ADJUST...
- Publication number 20230369432
- Publication date Nov 16, 2023
- Power Integrations, Inc.
- Kuo-Chang Robert YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIN-BASED FIELD EFFECT TRANSISTOR (FINFET) WITH CONNECTED...
- Publication number 20230361126
- Publication date Nov 9, 2023
- NEXGEN POWER SYSTEMS, INC.
- Andrew P. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A VERTICAL HEMT AND A METHOD TO PRODUCE A VERTICAL HEMT
- Publication number 20230352575
- Publication date Nov 2, 2023
- Epinovatech AB
- Martin Andreas Olsson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20230335631
- Publication date Oct 19, 2023
- GUANGDONG ZHINENG TECHNOLOGIES, CO. LTD.
- Zilan LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterostructure of an Electronic Circuit Having a Semiconductor Device
- Publication number 20230327012
- Publication date Oct 12, 2023
- NaMLab gGmbH
- Stefan SCHMULT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD OF USE
- Publication number 20230317444
- Publication date Oct 5, 2023
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin-Shaped Semiconductor Device, Fabrication Method, and Applicatio...
- Publication number 20230268381
- Publication date Aug 24, 2023
- Zilan LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20230261103
- Publication date Aug 17, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Device, and Method for Improving Short-Chan...
- Publication number 20230223466
- Publication date Jul 13, 2023
- Soochow University
- Mingxiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20230187490
- Publication date Jun 15, 2023
- DENSO CORPORATION
- SHINICHI HOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL...
- Publication number 20230155017
- Publication date May 18, 2023
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUS AND METHOD FOR FABRICATING SAME
- Publication number 20230139758
- Publication date May 4, 2023
- GUANGDONG ZHINENG TECHNOLOGIES, CO. LTD.
- Zilan LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CORE-SHELL NANOFIN VERTICAL SWITCH AND HIGH-VOLTAGE SWITCHING
- Publication number 20230060711
- Publication date Mar 2, 2023
- Government of the United States of America, as Represented by the Secretary o...
- Kristine Ann Bertness
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD-EFFECT TRANSISTOR, METHOD FOR PRODUCING A VERTICAL F...
- Publication number 20230065808
- Publication date Mar 2, 2023
- ROBERT BOSCH GmbH
- Christian Huber
- H01 - BASIC ELECTRIC ELEMENTS

Vertical transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Three dimensional vertically structured electronic devices

Nitride-based semiconductor device and method for manufacturing the...

Transistor

Method and system for fabrication of a vertical fin-based field eff...

Heterostructure of an electronic circuit having a semiconductor device

Nitride semiconductor device

Formation of semiconductor arrangement comprising semiconductor column

Fin-shaped semiconductor device, fabrication method, and applicatio...

Core-shell nanofin vertical switch and high-voltage switching

Double gate transistor device and method of operating

Half-bridge circuit including integrated level shifter transistor

Vertical type transistor, inverter including the same, and vertical...

Nitride semiconductor device

Multichannel transistor

Electrode structure for vertical group III-V device

Polarization controlled transistor

Semiconductor device and method for manufacturing the same

Three dimensional vertically structured electronic devices

Method and system for fabrication of a vertical fin-based field eff...

Group III nitride substrate, method of making, and method of use

Heterostructure of an electronic circuit having a semiconductor device

Vertical diode in stacked transistor architecture

Semiconductor device

Vertical type transistor, inverter including the same, and vertical...

Compound semiconductor, method for manufacturing same, and nitride...

High electron mobility transistor (HEMT) devices and methods

Ion implantation to control formation of MOSFET trench-bottom oxide

Nitride semiconductor device

High electron mobility transistor and fabrication method thereof

High electron mobility transistor and fabrication method thereof

Patents Applicationslast 30 patents

A VERTICAL HEMT, AN ELECTRICAL CIRCUIT, AND A METHOD FOR PRODUCING...

SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF

TRANSISTOR BASED ON COMPACT DRAIN AND HETERO-MATERIAL STRUCTURE

DOUBLE GATE TRANSISTOR DEVICE AND METHOD OF OPERATING

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

ELECTRONIC DEVICE

RF Power Transistor Having Off-Axis Layout

VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE W...

SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREOF

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

SUPER-HETEROJUNCTION SCHOTTKY DIODE

FIELD EFFECT TRANSISTORS WITH 2-DIMENSIONAL ELECTRON GAS CHANNELS

METHOD AND SYSTEM FOR FABRICATION OF A VERTICAL FIN-BASED FIELD EFF...

NITRIDE SEMICONDUCTOR DEVICE

A LATERAL SURFACE GATE VERTICAL FIELD EFFECT TRANSISTOR WITH ADJUST...

VERTICAL FIN-BASED FIELD EFFECT TRANSISTOR (FINFET) WITH CONNECTED...

A VERTICAL HEMT AND A METHOD TO PRODUCE A VERTICAL HEMT

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

Heterostructure of an Electronic Circuit Having a Semiconductor Device

GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD OF USE

Fin-Shaped Semiconductor Device, Fabrication Method, and Applicatio...

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

Field Effect Transistor Device, and Method for Improving Short-Chan...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL...

SEMICONDUCTOR APPARATUS AND METHOD FOR FABRICATING SAME

CORE-SHELL NANOFIN VERTICAL SWITCH AND HIGH-VOLTAGE SWITCHING

VERTICAL FIELD-EFFECT TRANSISTOR, METHOD FOR PRODUCING A VERTICAL F...