Vertical transistors

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H01L29/8083

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/8083Vertical transistors

Industries

Patents Grantslast 30 patents

Information Patent Grant
SiC devices with shielding structure
- Patent number 12,119,377
- Issue date Oct 15, 2024
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power devices having tunable saturation current clamps therein that...
- Patent number 12,094,932
- Issue date Sep 17, 2024
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 12,087,856
- Issue date Sep 10, 2024
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 12,080,757
- Issue date Sep 3, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-density neuromorphic computing element
- Patent number 11,983,622
- Issue date May 14, 2024
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Complementary switch element
- Patent number 11,972,985
- Issue date Apr 30, 2024
- National University Corporation Hokkaido University
- Katsuhiro Tomioka
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device
- Patent number 11,955,513
- Issue date Apr 9, 2024
- NISSHINBO MICRO DEVICES INC.
- Makoto Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method for JFET with implant isolation
- Patent number 11,929,440
- Issue date Mar 12, 2024
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,923,461
- Issue date Mar 5, 2024
- Denso Corporation
- Kenji Kono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Regrowth uniformity in GaN vertical devices
- Patent number 11,916,134
- Issue date Feb 27, 2024
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power devices fabricated using implanted methods
- Patent number 11,894,455
- Issue date Feb 6, 2024
- Wolfspeed, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single sided channel mesa power junction field effect transistor
- Patent number 11,869,982
- Issue date Jan 9, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a passivation layer and method for produc...
- Patent number 11,854,926
- Issue date Dec 26, 2023
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having overvoltage protection and method...
- Patent number 11,843,045
- Issue date Dec 12, 2023
- Infineon Technologies Austria AG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 11,824,086
- Issue date Nov 21, 2023
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate trench power semiconductor devices having improved deep shield...
- Patent number 11,764,295
- Issue date Sep 19, 2023
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional vertically structured electronic devices
- Patent number 11,742,424
- Issue date Aug 29, 2023
- Lawrence Livermore National Security, LLC
- Adam Conway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-plate trench FET and associated method for manufacturing
- Patent number 11,688,774
- Issue date Jun 27, 2023
- Monolithic Power Systems, Inc.
- Ignacio Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor structure with buried channel and resurf region...
- Patent number 11,682,722
- Issue date Jun 20, 2023
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline semiconductor film, plate-like body and semiconductor d...
- Patent number 11,682,702
- Issue date Jun 20, 2023
- FLOSFIA INC.
- Toshimi Hitora
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
JFET with implant isolation
- Patent number 11,637,209
- Issue date Apr 25, 2023
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-leakage regrown GaN p-n junctions for GaN power devices
- Patent number 11,626,483
- Issue date Apr 11, 2023
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performance SiC diodes
- Patent number 11,626,487
- Issue date Apr 11, 2023
- GENESIC SEMICONDUCTOR INC.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 11,616,138
- Issue date Mar 28, 2023
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component having a SiC semiconductor body
- Patent number 11,600,701
- Issue date Mar 7, 2023
- Infineon Technologies AG
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-density neuromorphic computing element
- Patent number 11,586,901
- Issue date Feb 21, 2023
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Super-junction based vertical gallium nitride JFET power devices
- Patent number 11,575,000
- Issue date Feb 7, 2023
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RC snubber
- Patent number 11,563,322
- Issue date Jan 24, 2023
- Infineon Technologies AG
- Dethard Peters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single sided channel mesa power junction field effect transistor
- Patent number 11,545,585
- Issue date Jan 3, 2023
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-plate trench FET and associated method for manufacturing
- Patent number 11,527,626
- Issue date Dec 13, 2022
- Monolithic Power Systems, Inc.
- Ignacio Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Structure and Manufacturing Method Thereof
- Publication number 20240355812
- Publication date Oct 24, 2024
- DIODES INCORPORATED
- Chiao-Shun Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD FOR JFET WITH IMPLANT ISOLATION
- Publication number 20240274725
- Publication date Aug 15, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REGROWTH UNIFORMITY IN GAN VERTICAL DEVICES
- Publication number 20240258408
- Publication date Aug 1, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT
- Publication number 20240256848
- Publication date Aug 1, 2024
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SELF-ALIGNED JFET DEVICE
- Publication number 20240204111
- Publication date Jun 20, 2024
- Semiconductor Components Industries, LLC
- Alexander Viktorovich BOLOTNIKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER DEVICES FABRICATED USING IMPLANTED METHODS
- Publication number 20240178314
- Publication date May 30, 2024
- Wolfspeed, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF
- Publication number 20240120410
- Publication date Apr 11, 2024
- Hon Young Semiconductor Corporation
- Yu-Tsu LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF
- Publication number 20240120411
- Publication date Apr 11, 2024
- Hon Young Semiconductor Corporation
- Yu-Tsu LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240105767
- Publication date Mar 28, 2024
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL JUNCTION FIELD EFFECT TRANSISTOR INCLUDING A PLURALITY OF...
- Publication number 20240079503
- Publication date Mar 7, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D STACKED FIELD-EFFECT TRANSISTOR DEVICE WITH PN JUNCTION STRUCTURE
- Publication number 20240047539
- Publication date Feb 8, 2024
- Samsung Electronics Co., Ltd.
- Ming HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING UNIFORMLY DOPED DEEP IMPLANTED REGIONS IN SILICO...
- Publication number 20230420575
- Publication date Dec 28, 2023
- Wolfspeed, Inc.
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING ON-CHIP GATE RESISTORS
- Publication number 20230420451
- Publication date Dec 28, 2023
- Wolfspeed, Inc.
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING IMPROVED DEEP SHIELD...
- Publication number 20230369486
- Publication date Nov 16, 2023
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH SHALLOW CONDUCTION REGION
- Publication number 20230327026
- Publication date Oct 12, 2023
- Wolfspeed, Inc.
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230282694
- Publication date Sep 7, 2023
- Nisshinbo Micro Devices Inc.
- Makoto HASHIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH JUNCTION FIELD EFFECT TRANSISTOR HAVING A MESA REGION
- Publication number 20230261117
- Publication date Aug 17, 2023
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD FOR JFET WITH IMPLANT ISOLATION
- Publication number 20230215958
- Publication date Jul 6, 2023
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT
- Publication number 20230206053
- Publication date Jun 29, 2023
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20230197844
- Publication date Jun 22, 2023
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component Having A SiC Semiconductor Body
- Publication number 20230148156
- Publication date May 11, 2023
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20230127978
- Publication date Apr 27, 2023
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS WITH REGROWN...
- Publication number 20230106300
- Publication date Apr 6, 2023
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE SIDED CHANNEL MESA POWER JUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20230098516
- Publication date Mar 30, 2023
- Monolithic Power Systems, Inc.
- Vipindas PALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER DEVICES FABRICATED USING IMPLANTED METHODS
- Publication number 20230087937
- Publication date Mar 23, 2023
- Wolfspeed, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC MOSFET WITH BUILT-IN SCHOTTKY DIODE
- Publication number 20230055024
- Publication date Feb 23, 2023
- Semiconductor Components Industries, LLC
- Andrei KONSTANTINOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE AND METHOD FOR PRODUCING THEREOF
- Publication number 20230049364
- Publication date Feb 16, 2023
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE SIDED CHANNEL MESA POWER JUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20230047121
- Publication date Feb 16, 2023
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230042174
- Publication date Feb 9, 2023
- DENSO CORPORATION
- Kenji KOUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230038806
- Publication date Feb 9, 2023
- DENSO CORPORATION
- Kenji KOUNO
- H01 - BASIC ELECTRIC ELEMENTS

Vertical transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

SiC devices with shielding structure

Power devices having tunable saturation current clamps therein that...

Field effect transistor

Method of fabricating super-junction based vertical gallium nitride...

High-density neuromorphic computing element

Complementary switch element

Semiconductor device

Fabrication method for JFET with implant isolation

Semiconductor device

Regrowth uniformity in GaN vertical devices

Vertical power devices fabricated using implanted methods

Single sided channel mesa power junction field effect transistor

Semiconductor device with a passivation layer and method for produc...

Power semiconductor device having overvoltage protection and method...

Method of fabricating super-junction based vertical gallium nitride...

Gate trench power semiconductor devices having improved deep shield...

Three dimensional vertically structured electronic devices

Field-plate trench FET and associated method for manufacturing

Vertical transistor structure with buried channel and resurf region...

Crystalline semiconductor film, plate-like body and semiconductor d...

JFET with implant isolation

Low-leakage regrown GaN p-n junctions for GaN power devices

Performance SiC diodes

Field effect transistor

Semiconductor component having a SiC semiconductor body

High-density neuromorphic computing element

Super-junction based vertical gallium nitride JFET power devices

RC snubber

Single sided channel mesa power junction field effect transistor

Field-plate trench FET and associated method for manufacturing

Patents Applicationslast 30 patents

Semiconductor Structure and Manufacturing Method Thereof

FABRICATION METHOD FOR JFET WITH IMPLANT ISOLATION

REGROWTH UNIFORMITY IN GAN VERTICAL DEVICES

HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT

SELF-ALIGNED JFET DEVICE

VERTICAL POWER DEVICES FABRICATED USING IMPLANTED METHODS

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

VERTICAL JUNCTION FIELD EFFECT TRANSISTOR INCLUDING A PLURALITY OF...

3D STACKED FIELD-EFFECT TRANSISTOR DEVICE WITH PN JUNCTION STRUCTURE

METHODS OF FORMING UNIFORMLY DOPED DEEP IMPLANTED REGIONS IN SILICO...

SEMICONDUCTOR DEVICES HAVING ON-CHIP GATE RESISTORS

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING IMPROVED DEEP SHIELD...

POWER SEMICONDUCTOR DEVICE WITH SHALLOW CONDUCTION REGION

SEMICONDUCTOR DEVICE

TRENCH JUNCTION FIELD EFFECT TRANSISTOR HAVING A MESA REGION

FABRICATION METHOD FOR JFET WITH IMPLANT ISOLATION

HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT

FIELD EFFECT TRANSISTOR

Semiconductor Component Having A SiC Semiconductor Body

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

GaN VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS WITH REGROWN...

SINGLE SIDED CHANNEL MESA POWER JUNCTION FIELD EFFECT TRANSISTOR

VERTICAL POWER DEVICES FABRICATED USING IMPLANTED METHODS

SIC MOSFET WITH BUILT-IN SCHOTTKY DIODE

TRANSISTOR DEVICE AND METHOD FOR PRODUCING THEREOF

SINGLE SIDED CHANNEL MESA POWER JUNCTION FIELD EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE