with a drain or source connected to a bulk conducting substrate

Industry

CPC
H01L29/78639

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/78639with a drain or source connected to a bulk conducting substrate

Industries

Patents Grantslast 30 patents

Information Patent Grant
Complementary transistor and semiconductor device
- Patent number 11,887,984
- Issue date Jan 30, 2024
- Sony Group Corporation
- Hidetoshi Oishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor devices and structures with metal layers
- Patent number 11,646,309
- Issue date May 9, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D integrated circuit device and structure with hybrid bonding
- Patent number 11,605,630
- Issue date Mar 14, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Protruding gate transistor and method of producing same
- Patent number 11,349,034
- Issue date May 31, 2022
- XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- Kyeongill Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic circuit with a transistor device, a level shifter and a...
- Patent number 11,342,467
- Issue date May 24, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Richard Hensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Connection arrangements for integrated lateral diffusion field effe...
- Patent number 11,335,627
- Issue date May 17, 2022
- Silanna Asia Pte Ltd
- Shanghui Larry Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic circuit with a transistor device and a level shifter
- Patent number 11,183,598
- Issue date Nov 23, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Richard Hensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switch resistor networks
- Patent number 11,159,158
- Issue date Oct 26, 2021
- Skyworks Solutions, Inc.
- Peter Harris Robert Popplewell
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
3D device and devices with bonding
- Patent number 11,101,266
- Issue date Aug 24, 2021
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D integrated circuit
- Patent number 11,018,133
- Issue date May 25, 2021
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary transistor and semiconductor device
- Patent number 11,004,851
- Issue date May 11, 2021
- Sony Corporation
- Hidetoshi Oishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device
- Patent number 10,910,364
- Issue date Feb 2, 2021
- MONOLITAIC 3D INC.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method of fab...
- Patent number 10,886,375
- Issue date Jan 5, 2021
- Samsung Electronics Co., Ltd.
- Dongjin Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Complementary transistor and semiconductor device
- Patent number 10,720,432
- Issue date Jul 21, 2020
- Sony Corporation
- Hidetoshi Oishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Approach for an area-efficient and scalable CMOS performance based...
- Patent number 10,714,623
- Issue date Jul 14, 2020
- Ahmad Houssam Tarakji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and structure
- Patent number 10,354,995
- Issue date Jul 16, 2019
- Monolithic 3D Inc.
- Zvi Or-Bach
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Device having a contact between semiconductor regions through a bur...
- Patent number 9,490,264
- Issue date Nov 8, 2016
- Soitec
- Carlos Mazure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices formed using a sacrificial layer and methods...
- Patent number 9,147,745
- Issue date Sep 29, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flat panel display
- Patent number 8,711,074
- Issue date Apr 29, 2014
- Samsung Display Co., Ltd.
- Jae-Bon Koo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating thin film transistor
- Patent number 8,652,885
- Issue date Feb 18, 2014
- Samsung Display Co., Ltd.
- Byoung-Deog Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device including thin film transistor
- Patent number 8,624,298
- Issue date Jan 7, 2014
- Samsung Display Co., Ltd.
- Byoung-Deog Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure
- Patent number 8,587,070
- Issue date Nov 19, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Terry Sparks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained fully depleted silicon on insulator semiconductor device
- Patent number 8,502,283
- Issue date Aug 6, 2013
- GLOBALFOUNDRIES Inc.
- Qi Xiang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of forming a semiconductor structure
- Patent number 8,105,890
- Issue date Jan 31, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Terry Sparks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor and display device using the same
- Patent number 8,013,337
- Issue date Sep 6, 2011
- Samsung Mobile Display Co., Ltd.
- Byoung-Deog Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 7,989,296
- Issue date Aug 2, 2011
- Samsung Electronics Co., Ltd.
- Sung-young Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with increased channel area and fabrication me...
- Patent number 7,977,196
- Issue date Jul 12, 2011
- Hynix Semiconductor Inc.
- Jun-Hee Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with increased channel area
- Patent number 7,977,749
- Issue date Jul 12, 2011
- Hynix Semiconductor Inc.
- Jun-Hee Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having fins FET and manufacturing method thereof
- Patent number 7,820,551
- Issue date Oct 26, 2010
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI device with charging protection and methods of making same
- Patent number 7,727,835
- Issue date Jun 1, 2010
- Advanced Micro Devices, Inc.
- David D. Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS
- Publication number 20240120332
- Publication date Apr 11, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE
- Publication number 20240113120
- Publication date Apr 4, 2024
- SONY GROUP CORPORATION
- Hidetoshi OISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS
- Publication number 20220328474
- Publication date Oct 13, 2022
- Monolithic 3D Inc.
- Zvi Or-Bach
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
CONNECTION ARRANGEMENTS FOR INTEGRATED LATERAL DIFFUSION FIELD EFFE...
- Publication number 20220278027
- Publication date Sep 1, 2022
- Silanna Asia Pte Ltd
- Shanghui Larry Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC CIRCUIT
- Publication number 20220254934
- Publication date Aug 11, 2022
- Richard Hensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC CIRCUIT WITH A TRANSISTOR DEVICE, A LEVEL SHIFTER AND A...
- Publication number 20220037536
- Publication date Feb 3, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Richard Hensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE
- Publication number 20210225841
- Publication date Jul 22, 2021
- SONY GROUP CORPORATION
- Hidetoshi OISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTRUDING GATE TRANSISTOR AND METHOD OF PRODUCING SAME
- Publication number 20210143283
- Publication date May 13, 2021
- XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- KYEONGILL YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D DEVICE AND DEVICES WITH BONDING
- Publication number 20210125981
- Publication date Apr 29, 2021
- MonolithIC 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D INTEGRATED CIRCUIT DEVICE AND STRUCTURE WITH BONDING
- Publication number 20210104517
- Publication date Apr 8, 2021
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D INTEGRATED CIRCUIT
- Publication number 20200365583
- Publication date Nov 19, 2020
- MonolithIC 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM A 3D INTEGRATED CIRCUIT
- Publication number 20200350310
- Publication date Nov 5, 2020
- MonolithIC 3D Inc.
- Zvi Or-Bach
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE
- Publication number 20200303376
- Publication date Sep 24, 2020
- SONY CORPORATION
- Hidetoshi OISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCH RESISTOR NETWORKS
- Publication number 20200153428
- Publication date May 14, 2020
- SKYWORKS SOLUTIONS, INC.
- Peter Harris Robert POPPLEWELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONNECTION ARRANGEMENTS FOR INTEGRATED LATERAL DIFFUSION FIELD EFFE...
- Publication number 20200144163
- Publication date May 7, 2020
- Silanna Asia Pte Ltd
- Shanghui Larry Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic Circuit with a Transistor Device and a Level Shifter
- Publication number 20200044096
- Publication date Feb 6, 2020
- Richard Hensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE
- Publication number 20190237461
- Publication date Aug 1, 2019
- MonolithIC 3D Inc.
- Zvi Or-Bach
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD OF FAB...
- Publication number 20190198626
- Publication date Jun 27, 2019
- Samsung Electronics Co., Ltd.
- Dongjin LEE
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND STRUCTURE
- Publication number 20180204835
- Publication date Jul 19, 2018
- MonolithIC 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME
- Publication number 20140110756
- Publication date Apr 24, 2014
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE
- Publication number 20120126289
- Publication date May 24, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Terry Sparks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING A CONTACT BETWEEN SEMICONDUCTOR REGIONS THROUGH A BUR...
- Publication number 20110169090
- Publication date Jul 14, 2011
- Carlos Mazure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanometric MOS Transistor With Maximized Ration Between On-State Cu...
- Publication number 20110079769
- Publication date Apr 7, 2011
- Nicolas Cavassilas
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor device having fins FET and manufacturing method thereof
- Publication number 20110012201
- Publication date Jan 20, 2011
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INCREASED CHANNEL AREA AND FABRICATION ME...
- Publication number 20100105183
- Publication date Apr 29, 2010
- Hynix Semiconductor Inc.
- Jun-Hee Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INCREASED CHANNEL AREA
- Publication number 20100096690
- Publication date Apr 22, 2010
- Hynix Semiconductor Inc.
- Jun-Hee Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20100059820
- Publication date Mar 11, 2010
- NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY
- Tadahiro Ohmi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Implementing Reduced Hot-Spot Thermal Effects for SOI Circuits
- Publication number 20100019385
- Publication date Jan 28, 2010
- International Business Machines Corporation
- Gerald Keith Bartley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor array and method for manufacturing a semiconductor array
- Publication number 20090258472
- Publication date Oct 15, 2009
- ATMEL Germany GmbH
- Tobias Florian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor array and method for manufacturing a semiconductor array
- Publication number 20090160009
- Publication date Jun 25, 2009
- ATMEL Germany GmbH
- Franz Dietz
- H01 - BASIC ELECTRIC ELEMENTS

with a drain or source connected to a bulk conducting substrate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Complementary transistor and semiconductor device

3D semiconductor devices and structures with metal layers

3D integrated circuit device and structure with hybrid bonding

Protruding gate transistor and method of producing same

Electronic circuit with a transistor device, a level shifter and a...

Connection arrangements for integrated lateral diffusion field effe...

Electronic circuit with a transistor device and a level shifter

Switch resistor networks

3D device and devices with bonding

3D integrated circuit

Complementary transistor and semiconductor device

3D semiconductor device

Semiconductor device having buried gate structure and method of fab...

Complementary transistor and semiconductor device

Approach for an area-efficient and scalable CMOS performance based...

Semiconductor memory device and structure

Device having a contact between semiconductor regions through a bur...

Semiconductor devices formed using a sacrificial layer and methods...

Flat panel display

Method of fabricating thin film transistor

Display device including thin film transistor

Method of forming a semiconductor structure

Strained fully depleted silicon on insulator semiconductor device

Method of forming a semiconductor structure

Thin film transistor and display device using the same

Semiconductor device and method of manufacturing same

Semiconductor device with increased channel area and fabrication me...

Semiconductor device with increased channel area

Semiconductor device having fins FET and manufacturing method thereof

SOI device with charging protection and methods of making same

Patents Applicationslast 30 patents

3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS

COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE

3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS

CONNECTION ARRANGEMENTS FOR INTEGRATED LATERAL DIFFUSION FIELD EFFE...

ELECTRONIC CIRCUIT

ELECTRONIC CIRCUIT WITH A TRANSISTOR DEVICE, A LEVEL SHIFTER AND A...

COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE

PROTRUDING GATE TRANSISTOR AND METHOD OF PRODUCING SAME

3D DEVICE AND DEVICES WITH BONDING

3D INTEGRATED CIRCUIT DEVICE AND STRUCTURE WITH BONDING

3D INTEGRATED CIRCUIT

METHOD TO FORM A 3D INTEGRATED CIRCUIT

COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE

SWITCH RESISTOR NETWORKS

CONNECTION ARRANGEMENTS FOR INTEGRATED LATERAL DIFFUSION FIELD EFFE...

Electronic Circuit with a Transistor Device and a Level Shifter

3D SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD OF FAB...

SEMICONDUCTOR MEMORY DEVICE AND STRUCTURE

SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE

DEVICE HAVING A CONTACT BETWEEN SEMICONDUCTOR REGIONS THROUGH A BUR...

Nanometric MOS Transistor With Maximized Ration Between On-State Cu...

Semiconductor device having fins FET and manufacturing method thereof

SEMICONDUCTOR DEVICE WITH INCREASED CHANNEL AREA AND FABRICATION ME...

SEMICONDUCTOR DEVICE WITH INCREASED CHANNEL AREA

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Implementing Reduced Hot-Spot Thermal Effects for SOI Circuits

Semiconductor array and method for manufacturing a semiconductor array

Semiconductor array and method for manufacturing a semiconductor array