with a heterojunction interface channel or gate

Industry

CPC
H01L29/66462

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66462with a heterojunction interface channel or gate

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor layer structure
- Patent number 12,148,821
- Issue date Nov 19, 2024
- Epinovatech AB
- Martin Andreas Olsson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-channel HEMT device and manufacturing method thereof
- Patent number 12,148,823
- Issue date Nov 19, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure of group III nitride semiconductor, ma...
- Patent number 12,148,822
- Issue date Nov 19, 2024
- GUANGDONG ZHINENG TECHNOLOGY CO., LTD.
- Zilan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GAN) three-dimensional integrated circuit technology
- Patent number 12,148,747
- Issue date Nov 19, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,148,801
- Issue date Nov 19, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Chuan He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with source-connected field plates
- Patent number 12,148,820
- Issue date Nov 19, 2024
- NXP B.V.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,142,675
- Issue date Nov 12, 2024
- Mitsubishi Electric Corporation
- Takuma Nanjo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for forming the same
- Patent number 12,142,676
- Issue date Nov 12, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High hole mobility transistor (HHMT) and method of manufacturing th...
- Patent number 12,136,669
- Issue date Nov 5, 2024
- GUANGDONG ZHINENG TECHNOLOGIES, CO. LTD.
- Zilan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor
- Patent number 12,136,667
- Issue date Nov 5, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Blend Mohamad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-mode device and preparation method therefor
- Patent number 12,136,675
- Issue date Nov 5, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure including alternating sets of channel and barrier l...
- Patent number 12,136,668
- Issue date Nov 5, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices for integrated front-end circuits
- Patent number 12,132,052
- Issue date Oct 29, 2024
- MONDE Wireless, Inc.
- Matthew Guidry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor and resistor-transistor-logic circuit with GaN structure a...
- Patent number 12,132,043
- Issue date Oct 29, 2024
- United Microelectronics Corp.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and fabrication method thereof
- Patent number 12,132,103
- Issue date Oct 29, 2024
- Vanguard International Semiconductor Corporation
- Yung-Fong Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic electrode for two-dimensional carrier gas (2DCG) semiconducto...
- Patent number 12,132,088
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Chien Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device
- Patent number 12,125,845
- Issue date Oct 22, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride (III-N) devices with reduced contact resistance a...
- Patent number 12,125,888
- Issue date Oct 22, 2024
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for fabricating the same
- Patent number 12,125,903
- Issue date Oct 22, 2024
- United Microelectronics Corp.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and epitaxial oxide device with impact ionization
- Patent number 12,125,946
- Issue date Oct 22, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,125,844
- Issue date Oct 22, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with multi-level self-aligned gate and source/drain term...
- Patent number 12,119,383
- Issue date Oct 15, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor and resistor-transistor-logic circuit with GaN structure a...
- Patent number 12,119,342
- Issue date Oct 15, 2024
- United Microelectronics Corp.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based high electron mobility transistors and fabrication method...
- Patent number 12,113,127
- Issue date Oct 8, 2024
- NANJING GREENCHIP SEMICONDUCTOR CO., LTD.
- Kuang-Po Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation method of GaN field effect transistor based on diamond...
- Patent number 12,112,944
- Issue date Oct 8, 2024
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Yuangang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fringe capacitor, integrated circuit and manufacturing process for...
- Patent number 12,113,062
- Issue date Oct 8, 2024
- Texas Instruments Incorporated
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for fabricating the same
- Patent number 12,107,157
- Issue date Oct 1, 2024
- United Microelectronics Corp.
- Kai-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure, HEMT structure and method of forming the same
- Patent number 12,107,156
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yao-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric field management in semiconductor devices
- Patent number 12,106,960
- Issue date Oct 1, 2024
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap structure coupled to source to reduce saturation current in HEM...
- Patent number 12,100,757
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20240387415
- Publication date Nov 21, 2024
- ROHM CO., LTD.
- Keita SHIKATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF GROUP III-V SEMICONDUCTOR PACKAGE
- Publication number 20240387300
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-An Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240387720
- Publication date Nov 21, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIER STRUCTURE CONFIGURED TO INCREASE PERFORMANCE OF III-V DEVICES
- Publication number 20240387719
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun-Hsiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
- Publication number 20240379767
- Publication date Nov 14, 2024
- Sumitomo Electric Industries, Ltd.
- Sadanori ARAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240379784
- Publication date Nov 14, 2024
- Sumitomo Electric Industries, Ltd.
- Akihiro HAYASAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ohmic Contact for Semiconductor Structures
- Publication number 20240379360
- Publication date Nov 14, 2024
- Shiva RAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride-Based Device with Step-Wise Field Plate and Method...
- Publication number 20240379836
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE
- Publication number 20240379835
- Publication date Nov 14, 2024
- ROHM CO., LTD.
- Isao TAKOBE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OHMIC ELECTRODE FOR TWO-DIMENSIONAL CARRIER GAS (2DCG) SEMICONDUCTO...
- Publication number 20240371951
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Chien Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20240372035
- Publication date Nov 7, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF TESTING THE SAME
- Publication number 20240371709
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- RUEI-JYUN HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20240371968
- Publication date Nov 7, 2024
- UNITED MICROELECTRONICS CORP.
- An-Chi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20240371969
- Publication date Nov 7, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Anbang ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH RECESSED OHMIC CONTACTS AND MET...
- Publication number 20240363746
- Publication date Oct 31, 2024
- SWEGAN AB
- Jr-Tai CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED HEMT DEVICE, DEVICE EPITAXIAL STRUCTURE, AND PREPARATION...
- Publication number 20240355916
- Publication date Oct 24, 2024
- Genettice (Qingdao) Semiconductor Materials Co., Ltd.
- Wang MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROEPITAXIAL SEMICONDUCTOR DEVICES WITH ENHANCED THERMAL DISSIPA...
- Publication number 20240355918
- Publication date Oct 24, 2024
- Woflspeed, Inc.
- Christer Hallin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FORMING THE SAME
- Publication number 20240355920
- Publication date Oct 24, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FOLDED CHANNEL GALLIUM NITRIDE BASED FIELD-EFFECT TRANSISTOR AND ME...
- Publication number 20240355921
- Publication date Oct 24, 2024
- INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Sen HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARRIER STRUCTURE FOR ETCH-BACK SILICON-ON-INSULATOR PROCESS
- Publication number 20240355902
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Chang CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE AND METHOD OF FABRICATI...
- Publication number 20240347621
- Publication date Oct 17, 2024
- UNITED MICROELECTRONICS CORP.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR SUBSTRATE, AND...
- Publication number 20240347343
- Publication date Oct 17, 2024
- NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH...
- Manato DEKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DIFFUSION BARRIER LAYER AND METHOD OF FAB...
- Publication number 20240347628
- Publication date Oct 17, 2024
- NXP USA, Inc.
- Jie Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240347603
- Publication date Oct 17, 2024
- ROHM CO., LTD.
- Norikazu ITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTENNA MODULE AND MANUFACTURING METHOD THEREOF
- Publication number 20240339747
- Publication date Oct 10, 2024
- TOHOKU UNIVERSITY
- Hirokazu FUKIDOME
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CERAMIC SUBSTRATE STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20240339320
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240339532
- Publication date Oct 10, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT DEVICE HAVING AN IMPROVED GATE STRUCTURE AND MANUFACTURING PRO...
- Publication number 20240332413
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20240332380
- Publication date Oct 3, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Ming-Hong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH CURRENT AND FIELD-MANAGED TRANSISTOR
- Publication number 20240332397
- Publication date Oct 3, 2024
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS

with a heterojunction interface channel or gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor layer structure

Double-channel HEMT device and manufacturing method thereof

Integrated circuit structure of group III nitride semiconductor, ma...

Gallium nitride (GAN) three-dimensional integrated circuit technology

Nitride-based semiconductor device and method for manufacturing the...

Transistors with source-connected field plates

Semiconductor device and method of manufacturing the same

High electron mobility transistor and method for forming the same

High hole mobility transistor (HHMT) and method of manufacturing th...

Transistor

Enhancement-mode device and preparation method therefor

Heterostructure including alternating sets of channel and barrier l...

Devices for integrated front-end circuits

Resistor and resistor-transistor-logic circuit with GaN structure a...

High electron mobility transistor and fabrication method thereof

Ohmic electrode for two-dimensional carrier gas (2DCG) semiconducto...

Electronic device

Group III-nitride (III-N) devices with reduced contact resistance a...

High electron mobility transistor and method for fabricating the same

Method and epitaxial oxide device with impact ionization

Nitride-based semiconductor bidirectional switching device and meth...

Transistor with multi-level self-aligned gate and source/drain term...

Resistor and resistor-transistor-logic circuit with GaN structure a...

GaN-based high electron mobility transistors and fabrication method...

Preparation method of GaN field effect transistor based on diamond...

Fringe capacitor, integrated circuit and manufacturing process for...

High electron mobility transistor and method for fabricating the same

Semiconductor structure, HEMT structure and method of forming the same

Electric field management in semiconductor devices

Cap structure coupled to source to reduce saturation current in HEM...

Patents Applicationslast 30 patents

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

MANUFACTURING METHOD OF GROUP III-V SEMICONDUCTOR PACKAGE

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

BARRIER STRUCTURE CONFIGURED TO INCREASE PERFORMANCE OF III-V DEVICES

SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Ohmic Contact for Semiconductor Structures

Gallium Nitride-Based Device with Step-Wise Field Plate and Method...

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE

OHMIC ELECTRODE FOR TWO-DIMENSIONAL CARRIER GAS (2DCG) SEMICONDUCTO...

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

SEMICONDUCTOR DEVICE AND METHOD OF TESTING THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR

SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE STRUCTURE WITH RECESSED OHMIC CONTACTS AND MET...

GAN-BASED HEMT DEVICE, DEVICE EPITAXIAL STRUCTURE, AND PREPARATION...

HETEROEPITAXIAL SEMICONDUCTOR DEVICES WITH ENHANCED THERMAL DISSIPA...

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FORMING THE SAME

FOLDED CHANNEL GALLIUM NITRIDE BASED FIELD-EFFECT TRANSISTOR AND ME...

CARRIER STRUCTURE FOR ETCH-BACK SILICON-ON-INSULATOR PROCESS

HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE AND METHOD OF FABRICATI...

NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR SUBSTRATE, AND...

SEMICONDUCTOR DEVICE WITH DIFFUSION BARRIER LAYER AND METHOD OF FAB...

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

ANTENNA MODULE AND MANUFACTURING METHOD THEREOF

CERAMIC SUBSTRATE STRUCTURES AND METHODS OF FORMING THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

HEMT DEVICE HAVING AN IMPROVED GATE STRUCTURE AND MANUFACTURING PRO...

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

HIGH CURRENT AND FIELD-MANAGED TRANSISTOR