with a one- or zero-dimensional channel

Industry

CPC
H01L29/66439

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66439with a one- or zero-dimensional channel

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Stacked semiconductor device with nanostructure channels
- Patent number 12,170,227
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Te Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structures and methods of forming the same in field-effec...
- Patent number 12,170,334
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shi Ning Ju
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of forming interconnect structure having a barrier layer
- Patent number 12,165,975
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Cheng Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors comprising a vertical stack of elongated semiconductor...
- Patent number 12,165,869
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 12,166,110
- Issue date Dec 10, 2024
- Adeia Semiconductor Solutions LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processor element for quantum information processor
- Patent number 12,154,978
- Issue date Nov 26, 2024
- QUANTUM MOTION TECHNOLOGIES LIMITED
- Michael Fogarty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for making nanostructure transistors with flush source/drain...
- Patent number 12,142,669
- Issue date Nov 12, 2024
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all-around semiconductor device
- Patent number 12,142,635
- Issue date Nov 12, 2024
- Parabellum Strategic Opportunities Fund LLC
- Ka-Hing Fung
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 12,142,634
- Issue date Nov 12, 2024
- Sony Group Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device
- Patent number 12,142,650
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Sang Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,142,671
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Dong Chan Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method and plasma processing method
- Patent number 12,142,489
- Issue date Nov 12, 2024
- HITACHI HIGH-TECH CORPORATION
- Mamoru Yakushiji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a gate-all-around field effect trans...
- Patent number 12,142,529
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Ming Yu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for making nanostructure transistors with offset source/drai...
- Patent number 12,142,662
- Issue date Nov 12, 2024
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside electrical contacts to buried power rails
- Patent number 12,136,655
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonding and isolation techniques for stacked transistor structures
- Patent number 12,132,079
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Kan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide (TMD) layer stack for transistor ap...
- Patent number 12,125,895
- Issue date Oct 22, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having fin-type field effect transistor and me...
- Patent number 12,119,351
- Issue date Oct 15, 2024
- Samsung Electronics Co., Ltd.
- Dong-Il Bae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure, HEMT structure and method of forming the same
- Patent number 12,107,156
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yao-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure for stacked multi-gate device
- Patent number 12,107,169
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
User model-based data loss prevention
- Patent number 12,095,820
- Issue date Sep 17, 2024
- Armorblox LLC
- Chetan Anand
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Integrated circuit devices including discharging path and methods o...
- Patent number 12,087,669
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Jaehong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary field effect transistor devices
- Patent number 12,087,770
- Issue date Sep 10, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with nanofog oxide adhered to inert or weak...
- Patent number 12,080,549
- Issue date Sep 3, 2024
- The Regents of the University of California
- Iljo Kwak
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,074,204
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching back and selective deposition of metal gate
- Patent number 12,068,393
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anisotropic sige:b epitaxial film growth for gate all around transi...
- Patent number 12,068,155
- Issue date Aug 20, 2024
- Applied Materials, Inc.
- Chen-Ying Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back end of line nanowire power switch transistors
- Patent number 12,062,714
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing, Co., Ltd.
- Li-Yang Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective silicon etch for gate all around transistors
- Patent number 12,062,708
- Issue date Aug 13, 2024
- Applied Materials, Inc.
- Michael Stolfi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,062,580
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240421205
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A BACKSIDE POWER DISTRIBUTION...
- Publication number 20240421154
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Jongjin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240421186
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...
- Publication number 20240421214
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTED GATE CUT REGION
- Publication number 20240420959
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
- Publication number 20240421216
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Sunggyu Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTED GATE CUT REGION
- Publication number 20240420960
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240421188
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- HYO KYOUNG KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240421189
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Beom Jin Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLACEHOLDER WITH DIELECTRIC LINER PROTECTION TO PREVENT DIRECT BACK...
- Publication number 20240421085
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN PROTECTION USING A BACKSIDE PLACEHOLDER
- Publication number 20240421037
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Lijuan Zou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING MG CONTACTS COUPLED BY MP CONTACT AND METHOD OF MANUF...
- Publication number 20240421187
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240421190
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Seong Heum Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FUNNELED SOURCE/DRAIN INTERFACIAL REGION
- Publication number 20240421191
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES OF SEMICONDUCTOR DEVICES AND FABRICATION METHODS TH...
- Publication number 20240421204
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Ju Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MULTI-GATE DEVICE WITH AN INSULATING LAYER BETWEEN TOP AND...
- Publication number 20240413220
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan Chen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CFETS AND THE METHODS OF FORMING THE SAME
- Publication number 20240413019
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ting-Yun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS (FETS) EMPLOYING THERMAL EXPANSION OF WORK...
- Publication number 20240413219
- Publication date Dec 12, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH REDUCED LEAKAGE CURRENT AND METHOD FOR...
- Publication number 20240413223
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-En TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240413231
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huang-Chao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TIN AS NUCLEAR SPIN QUBIT IN SILICON
- Publication number 20240413226
- Publication date Dec 12, 2024
- National Technology & Engineering Solutions of Sandia, LLC
- Wayne Witzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSTRUCTURE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING
- Publication number 20240413230
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Mu-Chieh Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEAT SINK FOR STACKED MULTI-GATE DEVICE
- Publication number 20240413039
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che Chi Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FETs WITH BACKSIDE ANGLE CUT
- Publication number 20240413084
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE CONTACT WITH PROTRUDING SOURCE/DRAIN
- Publication number 20240413201
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240413202
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Heng TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DOPED SOURCE/DRAIN REGION
- Publication number 20240413206
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Yong Jun Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE FETS
- Publication number 20240413232
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Mehdi Saremi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS WITH METAL VIAS
- Publication number 20240413085
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR PHYSICALLY UNCLONABLE FUNCTION
- Publication number 20240413100
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chen LIN
- H01 - BASIC ELECTRIC ELEMENTS

with a one- or zero-dimensional channel

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Stacked semiconductor device with nanostructure channels

Isolation structures and methods of forming the same in field-effec...

Method of forming interconnect structure having a barrier layer

Transistors comprising a vertical stack of elongated semiconductor...

Nanosheet channel-to-source and drain isolation

Processor element for quantum information processor

Method for making nanostructure transistors with flush source/drain...

Gate all-around semiconductor device

Silicon and silicon germanium nanowire structures

Semiconductor device

Semiconductor device

Semiconductor device manufacturing method and plasma processing method

Semiconductor device including a gate-all-around field effect trans...

Method for making nanostructure transistors with offset source/drai...

Backside electrical contacts to buried power rails

Bonding and isolation techniques for stacked transistor structures

Transition metal dichalcogenide (TMD) layer stack for transistor ap...

Semiconductor device having fin-type field effect transistor and me...

Semiconductor structure, HEMT structure and method of forming the same

Contact structure for stacked multi-gate device

User model-based data loss prevention

Integrated circuit devices including discharging path and methods o...

Complementary field effect transistor devices

Semiconductor structure with nanofog oxide adhered to inert or weak...

Semiconductor structure and method for forming the same

Etching back and selective deposition of metal gate

Anisotropic sige:b epitaxial film growth for gate all around transi...

Back end of line nanowire power switch transistors

Selective silicon etch for gate all around transistors

Method of manufacturing a semiconductor device and a semiconductor...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

INTEGRATED CIRCUIT DEVICES INCLUDING A BACKSIDE POWER DISTRIBUTION...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...

INVERTED GATE CUT REGION

INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE

INVERTED GATE CUT REGION

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

PLACEHOLDER WITH DIELECTRIC LINER PROTECTION TO PREVENT DIRECT BACK...

SOURCE/DRAIN PROTECTION USING A BACKSIDE PLACEHOLDER

DEVICE HAVING MG CONTACTS COUPLED BY MP CONTACT AND METHOD OF MANUF...

SEMICONDUCTOR DEVICES

FUNNELED SOURCE/DRAIN INTERFACIAL REGION

GATE STRUCTURES OF SEMICONDUCTOR DEVICES AND FABRICATION METHODS TH...

STACKED MULTI-GATE DEVICE WITH AN INSULATING LAYER BETWEEN TOP AND...

CFETS AND THE METHODS OF FORMING THE SAME

FIELD-EFFECT TRANSISTORS (FETS) EMPLOYING THERMAL EXPANSION OF WORK...

SEMICONDUCTOR STRUCTURE WITH REDUCED LEAKAGE CURRENT AND METHOD FOR...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

TIN AS NUCLEAR SPIN QUBIT IN SILICON

NANOSTRUCTURE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING

HEAT SINK FOR STACKED MULTI-GATE DEVICE

STACKED FETs WITH BACKSIDE ANGLE CUT

SELF-ALIGNED BACKSIDE CONTACT WITH PROTRUDING SOURCE/DRAIN

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE WITH DOPED SOURCE/DRAIN REGION

HIGH PERFORMANCE FETS

STACKED TRANSISTORS WITH METAL VIAS

STACKED TRANSISTOR PHYSICALLY UNCLONABLE FUNCTION