with a one- or zero-dimensional channel

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H01L29/66439

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66439with a one- or zero-dimensional channel

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including backside contact structure having po...
- Patent number 12,255,248
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Wonhyuk Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor including gate insulating layer formed of t...
- Patent number 12,255,244
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multigate device structure with engineered cladding and method maki...
- Patent number 12,249,539
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Wen Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including epitaxial region
- Patent number 12,249,505
- Issue date Mar 11, 2025
- Samsung Electronics Co., Ltd.
- Gyeom Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 12,249,606
- Issue date Mar 11, 2025
- Samsung Electronics Co., Ltd.
- Minhee Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing the same and electron...
- Patent number 12,249,544
- Issue date Mar 11, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device with dielectric liners on gate refill metal
- Patent number 12,243,918
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Hsiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Architecture with stacked N and P transistors with a channel struct...
- Patent number 12,237,330
- Issue date Feb 25, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Sylvain Barraud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 12,230,713
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making nanostructure transistors with source/drain trenc...
- Patent number 12,230,694
- Issue date Feb 18, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked transistors with different channel widths
- Patent number 12,230,544
- Issue date Feb 18, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hard mask trimming in method for manufacturing semiconductor device
- Patent number 12,217,961
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Chien Kuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having stacked transistors and backside power n...
- Patent number 12,218,058
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate contact structure formed from g...
- Patent number 12,211,837
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Myunghoon Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors comprising a matrix of gate-all-around cha...
- Patent number 12,211,848
- Issue date Jan 28, 2025
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,211,895
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including multi-thickness nanowires
- Patent number 12,206,026
- Issue date Jan 21, 2025
- Samsung Electronics Co., Ltd.
- Seung Hun Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device structure with source/drain structure and meth...
- Patent number 12,205,849
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method of manufacturing the same
- Patent number 12,199,099
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Jung-Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device structure wi...
- Patent number 12,199,169
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-Ching Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,191,205
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Minghwei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contact structures for semiconductor nanowires and nano...
- Patent number 12,176,429
- Issue date Dec 24, 2024
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor device with nanostructure channels
- Patent number 12,170,227
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Te Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structures and methods of forming the same in field-effec...
- Patent number 12,170,334
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shi Ning Ju
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 12,166,110
- Issue date Dec 10, 2024
- Adeia Semiconductor Solutions LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming interconnect structure having a barrier layer
- Patent number 12,165,975
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Cheng Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors comprising a vertical stack of elongated semiconductor...
- Patent number 12,165,869
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processor element for quantum information processor
- Patent number 12,154,978
- Issue date Nov 26, 2024
- QUANTUM MOTION TECHNOLOGIES LIMITED
- Michael Fogarty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Gate all-around semiconductor device
- Patent number 12,142,635
- Issue date Nov 12, 2024
- Parabellum Strategic Opportunities Fund LLC
- Ka-Hing Fung
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for making nanostructure transistors with flush source/drain...
- Patent number 12,142,669
- Issue date Nov 12, 2024
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Etch Selectivity Modulation by Fluorocarbon Treatment
- Publication number 20250069896
- Publication date Feb 27, 2025
- TOKYO ELECTRON LIMITED
- Ivo Otto IV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE ISOLATION OF CONTACT AND SOURCE/DRAIN STRUCTURES
- Publication number 20250072049
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Szu-Chien WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Stack for Multigate Device
- Publication number 20250072051
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH ISOLATED SOURCE/DRAINS AND METHOD
- Publication number 20250072065
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Hung CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING SEMICONDUCTOR DEVICES
- Publication number 20250072096
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Gi Woong SHIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250072100
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Te TU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET GATE METAL SCHEME COMPATIBLE WITH AGGRESSIVE GATE WIDTH S...
- Publication number 20250072050
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Wei HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...
- Publication number 20250072106
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Jisoo PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SEAL RING STRUCTURE AND METHOD FOR FORMIN...
- Publication number 20250070052
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ke-Gang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250072067
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- SHIH-CHENG CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Nano-Pillar Transistor Structures for 3-D ICS
- Publication number 20250063780
- Publication date Feb 20, 2025
- MURATA MANUFACTURING CO., LTD.
- Sinan Goktepeli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET WITH BOTTOM EPI SIZE CONTROL AND WRAPAROUND BACKSIDE CO...
- Publication number 20250062190
- Publication date Feb 20, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063808
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- KUAN-TING PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...
- Publication number 20250063825
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- JAEHONG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063790
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063763
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Won Keun CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063781
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shiang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...
- Publication number 20250063811
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Panjae PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS FOR FORMING DEVICES WITH INNER SPACERS
- Publication number 20250063779
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063789
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Hsiang SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063810
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lung TUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH GATE SPACER AND METHOD FOR FORM...
- Publication number 20250062158
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Li CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...
- Publication number 20250062192
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- JAEHONG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH CONTACT STRUCTURE AND METHOD FO...
- Publication number 20250063764
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...
- Publication number 20250063782
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Panjae PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250063788
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Sang Min CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPECIALIZED TRANSISTORS
- Publication number 20250063791
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT GATE ISOLATION
- Publication number 20250063792
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING FET STRUCTURE
- Publication number 20250063806
- Publication date Feb 20, 2025
- Huawei Technologies Co., Ltd
- Yijian CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20250056782
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tao CHOU
- H01 - BASIC ELECTRIC ELEMENTS

with a one- or zero-dimensional channel

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device including backside contact structure having po...

Field effect transistor including gate insulating layer formed of t...

Multigate device structure with engineered cladding and method maki...

Semiconductor device including epitaxial region

Integrated circuit device

Semiconductor device, method of manufacturing the same and electron...

Semiconductor device with dielectric liners on gate refill metal

Architecture with stacked N and P transistors with a channel struct...

Semiconductor device structure and methods of forming the same

Method for making nanostructure transistors with source/drain trenc...

Stacked transistors with different channel widths

Hard mask trimming in method for manufacturing semiconductor device

Integrated circuits having stacked transistors and backside power n...

Semiconductor device including gate contact structure formed from g...

Field effect transistors comprising a matrix of gate-all-around cha...

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor device including multi-thickness nanowires

Semiconductor device structure with source/drain structure and meth...

Semiconductor devices and method of manufacturing the same

Structure and formation method of semiconductor device structure wi...

Semiconductor device and manufacturing method thereof

Wrap-around contact structures for semiconductor nanowires and nano...

Stacked semiconductor device with nanostructure channels

Isolation structures and methods of forming the same in field-effec...

Nanosheet channel-to-source and drain isolation

Method of forming interconnect structure having a barrier layer

Transistors comprising a vertical stack of elongated semiconductor...

Processor element for quantum information processor

Gate all-around semiconductor device

Method for making nanostructure transistors with flush source/drain...

Patents Applicationslast 30 patents

Etch Selectivity Modulation by Fluorocarbon Treatment

SEMICONDUCTOR DEVICE ISOLATION OF CONTACT AND SOURCE/DRAIN STRUCTURES

Gate Stack for Multigate Device

FIELD EFFECT TRANSISTOR WITH ISOLATED SOURCE/DRAINS AND METHOD

METHODS OF FABRICATING SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE

NANOSHEET GATE METAL SCHEME COMPATIBLE WITH AGGRESSIVE GATE WIDTH S...

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...

SEMICONDUCTOR DEVICE WITH SEAL RING STRUCTURE AND METHOD FOR FORMIN...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Vertical Nano-Pillar Transistor Structures for 3-D ICS

STACKED FET WITH BOTTOM EPI SIZE CONTROL AND WRAPAROUND BACKSIDE CO...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...

DEVICES AND METHODS FOR FORMING DEVICES WITH INNER SPACERS

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE STRUCTURE WITH GATE SPACER AND METHOD FOR FORM...

INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...

SEMICONDUCTOR DEVICE STRUCTURE WITH CONTACT STRUCTURE AND METHOD FO...

INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SPECIALIZED TRANSISTORS

CONTACT GATE ISOLATION

METHOD FOR PRODUCING FET STRUCTURE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF