with a one- or zero-dimensional channel

Industry

CPC
H01L29/66439

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66439with a one- or zero-dimensional channel

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 12,230,713
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making nanostructure transistors with source/drain trenc...
- Patent number 12,230,694
- Issue date Feb 18, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked transistors with different channel widths
- Patent number 12,230,544
- Issue date Feb 18, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hard mask trimming in method for manufacturing semiconductor device
- Patent number 12,217,961
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Chien Kuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having stacked transistors and backside power n...
- Patent number 12,218,058
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate contact structure formed from g...
- Patent number 12,211,837
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Myunghoon Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors comprising a matrix of gate-all-around cha...
- Patent number 12,211,848
- Issue date Jan 28, 2025
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,211,895
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including multi-thickness nanowires
- Patent number 12,206,026
- Issue date Jan 21, 2025
- Samsung Electronics Co., Ltd.
- Seung Hun Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device structure with source/drain structure and meth...
- Patent number 12,205,849
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method of manufacturing the same
- Patent number 12,199,099
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Jung-Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device structure wi...
- Patent number 12,199,169
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-Ching Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,191,205
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Minghwei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contact structures for semiconductor nanowires and nano...
- Patent number 12,176,429
- Issue date Dec 24, 2024
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor device with nanostructure channels
- Patent number 12,170,227
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Te Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structures and methods of forming the same in field-effec...
- Patent number 12,170,334
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shi Ning Ju
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 12,166,110
- Issue date Dec 10, 2024
- Adeia Semiconductor Solutions LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming interconnect structure having a barrier layer
- Patent number 12,165,975
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Cheng Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors comprising a vertical stack of elongated semiconductor...
- Patent number 12,165,869
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processor element for quantum information processor
- Patent number 12,154,978
- Issue date Nov 26, 2024
- QUANTUM MOTION TECHNOLOGIES LIMITED
- Michael Fogarty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for making nanostructure transistors with flush source/drain...
- Patent number 12,142,669
- Issue date Nov 12, 2024
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all-around semiconductor device
- Patent number 12,142,635
- Issue date Nov 12, 2024
- Parabellum Strategic Opportunities Fund LLC
- Ka-Hing Fung
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 12,142,634
- Issue date Nov 12, 2024
- Sony Group Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device
- Patent number 12,142,650
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Sang Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,142,671
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Dong Chan Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method and plasma processing method
- Patent number 12,142,489
- Issue date Nov 12, 2024
- HITACHI HIGH-TECH CORPORATION
- Mamoru Yakushiji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a gate-all-around field effect trans...
- Patent number 12,142,529
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Ming Yu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for making nanostructure transistors with offset source/drai...
- Patent number 12,142,662
- Issue date Nov 12, 2024
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside electrical contacts to buried power rails
- Patent number 12,136,655
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonding and isolation techniques for stacked transistor structures
- Patent number 12,132,079
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Kan Hu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STACKED FET WITH BOTTOM EPI SIZE CONTROL AND WRAPAROUND BACKSIDE CO...
- Publication number 20250062190
- Publication date Feb 20, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Nano-Pillar Transistor Structures for 3-D ICS
- Publication number 20250063780
- Publication date Feb 20, 2025
- MURATA MANUFACTURING CO., LTD.
- Sinan Goktepeli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063808
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- KUAN-TING PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...
- Publication number 20250063825
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- JAEHONG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063790
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063763
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Won Keun CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063781
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shiang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...
- Publication number 20250063811
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Panjae PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS FOR FORMING DEVICES WITH INNER SPACERS
- Publication number 20250063779
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063789
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Hsiang SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063810
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lung TUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH GATE SPACER AND METHOD FOR FORM...
- Publication number 20250062158
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Li CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...
- Publication number 20250062192
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- JAEHONG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH CONTACT STRUCTURE AND METHOD FO...
- Publication number 20250063764
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...
- Publication number 20250063782
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Panjae PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250063788
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Sang Min CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPECIALIZED TRANSISTORS
- Publication number 20250063791
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT GATE ISOLATION
- Publication number 20250063792
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING FET STRUCTURE
- Publication number 20250063806
- Publication date Feb 20, 2025
- Huawei Technologies Co., Ltd
- Yijian CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION METAL PATTERNING AND GATE CUT FOR NANOSHEET DEVICE
- Publication number 20250056849
- Publication date Feb 13, 2025
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20250056782
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tao CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20250056840
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250056841
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jih-Chao CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056861
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- SOOJIN JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH CONDUCT...
- Publication number 20250056848
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chu-Yuan HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN REGIONS IN COMPLEMENTARY FIELD EFFECT TRANSISTORS AND...
- Publication number 20250056852
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE/NANOSHEET DEVICE WITH CRYSTAL SPACER AND METHOD OF MANUFAC...
- Publication number 20250056850
- Publication date Feb 13, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN...
- Publication number 20250056824
- Publication date Feb 13, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAI...
- Publication number 20250056825
- Publication date Feb 13, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE THAT INCLUDES A MULTI-BRIDGE CHANNEL FIELD EFF...
- Publication number 20250056843
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Jong Min SHIN
- H01 - BASIC ELECTRIC ELEMENTS

with a one- or zero-dimensional channel

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device structure and methods of forming the same

Method for making nanostructure transistors with source/drain trenc...

Stacked transistors with different channel widths

Hard mask trimming in method for manufacturing semiconductor device

Integrated circuits having stacked transistors and backside power n...

Semiconductor device including gate contact structure formed from g...

Field effect transistors comprising a matrix of gate-all-around cha...

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor device including multi-thickness nanowires

Semiconductor device structure with source/drain structure and meth...

Semiconductor devices and method of manufacturing the same

Structure and formation method of semiconductor device structure wi...

Semiconductor device and manufacturing method thereof

Wrap-around contact structures for semiconductor nanowires and nano...

Stacked semiconductor device with nanostructure channels

Isolation structures and methods of forming the same in field-effec...

Nanosheet channel-to-source and drain isolation

Method of forming interconnect structure having a barrier layer

Transistors comprising a vertical stack of elongated semiconductor...

Processor element for quantum information processor

Method for making nanostructure transistors with flush source/drain...

Gate all-around semiconductor device

Silicon and silicon germanium nanowire structures

Semiconductor device

Semiconductor device

Semiconductor device manufacturing method and plasma processing method

Semiconductor device including a gate-all-around field effect trans...

Method for making nanostructure transistors with offset source/drai...

Backside electrical contacts to buried power rails

Bonding and isolation techniques for stacked transistor structures

Patents Applicationslast 30 patents

STACKED FET WITH BOTTOM EPI SIZE CONTROL AND WRAPAROUND BACKSIDE CO...

Vertical Nano-Pillar Transistor Structures for 3-D ICS

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...

DEVICES AND METHODS FOR FORMING DEVICES WITH INNER SPACERS

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE STRUCTURE WITH GATE SPACER AND METHOD FOR FORM...

INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...

SEMICONDUCTOR DEVICE STRUCTURE WITH CONTACT STRUCTURE AND METHOD FO...

INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SPECIALIZED TRANSISTORS

CONTACT GATE ISOLATION

METHOD FOR PRODUCING FET STRUCTURE

WORK FUNCTION METAL PATTERNING AND GATE CUT FOR NANOSHEET DEVICE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH CONDUCT...

SOURCE/DRAIN REGIONS IN COMPLEMENTARY FIELD EFFECT TRANSISTORS AND...

NANOWIRE/NANOSHEET DEVICE WITH CRYSTAL SPACER AND METHOD OF MANUFAC...

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN...

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAI...

SEMICONDUCTOR DEVICE THAT INCLUDES A MULTI-BRIDGE CHANNEL FIELD EFF...