with a one- or zero-dimensional channel

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CPC
H01L29/66439

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66439with a one- or zero-dimensional channel

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method for making nanostructure transistors with flush source/drain...
- Patent number 12,142,669
- Issue date Nov 12, 2024
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all-around semiconductor device
- Patent number 12,142,635
- Issue date Nov 12, 2024
- Parabellum Strategic Opportunities Fund LLC
- Ka-Hing Fung
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device
- Patent number 12,142,671
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Dong Chan Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 12,142,634
- Issue date Nov 12, 2024
- Sony Group Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device
- Patent number 12,142,650
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Sang Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method and plasma processing method
- Patent number 12,142,489
- Issue date Nov 12, 2024
- HITACHI HIGH-TECH CORPORATION
- Mamoru Yakushiji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a gate-all-around field effect trans...
- Patent number 12,142,529
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Ming Yu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for making nanostructure transistors with offset source/drai...
- Patent number 12,142,662
- Issue date Nov 12, 2024
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside electrical contacts to buried power rails
- Patent number 12,136,655
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonding and isolation techniques for stacked transistor structures
- Patent number 12,132,079
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Kan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide (TMD) layer stack for transistor ap...
- Patent number 12,125,895
- Issue date Oct 22, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having fin-type field effect transistor and me...
- Patent number 12,119,351
- Issue date Oct 15, 2024
- Samsung Electronics Co., Ltd.
- Dong-Il Bae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure, HEMT structure and method of forming the same
- Patent number 12,107,156
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yao-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure for stacked multi-gate device
- Patent number 12,107,169
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
User model-based data loss prevention
- Patent number 12,095,820
- Issue date Sep 17, 2024
- Armorblox LLC
- Chetan Anand
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Integrated circuit devices including discharging path and methods o...
- Patent number 12,087,669
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Jaehong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary field effect transistor devices
- Patent number 12,087,770
- Issue date Sep 10, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with nanofog oxide adhered to inert or weak...
- Patent number 12,080,549
- Issue date Sep 3, 2024
- The Regents of the University of California
- Iljo Kwak
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,074,204
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching back and selective deposition of metal gate
- Patent number 12,068,393
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anisotropic sige:b epitaxial film growth for gate all around transi...
- Patent number 12,068,155
- Issue date Aug 20, 2024
- Applied Materials, Inc.
- Chen-Ying Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back end of line nanowire power switch transistors
- Patent number 12,062,714
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing, Co., Ltd.
- Li-Yang Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective silicon etch for gate all around transistors
- Patent number 12,062,708
- Issue date Aug 13, 2024
- Applied Materials, Inc.
- Michael Stolfi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,062,580
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked transistors
- Patent number 12,057,494
- Issue date Aug 6, 2024
- Intel Corporation
- Patrick Morrow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire transistor fabrication with hardmask layers
- Patent number 12,046,637
- Issue date Jul 23, 2024
- Sony Group Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporating nitrogen in dipole engineering for multi-threshold vo...
- Patent number 12,040,365
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with nanostructure
- Patent number 12,034,045
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain features
- Patent number 12,034,048
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ruei-Ping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming source/drain regions with expanded widths
- Patent number 12,034,077
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240387327
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Yang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PACKAGE STRUCTURE WITH OPTICAL ELEMENTS AND METHOD FOR MANUFACTURIN...
- Publication number 20240387329
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsin LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING AN ACTIVE PATTERN
- Publication number 20240387717
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- HYOHOON BYEON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TRANSISTORS OF DIFFERENT CONFIGURATIONS
- Publication number 20240387746
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTOR FABRICATION WITH HARDMASK LAYERS
- Publication number 20240387634
- Publication date Nov 21, 2024
- SONY GROUP CORPORATION
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240387669
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Syuan SIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALED 2T DRAM
- Publication number 20240386943
- Publication date Nov 21, 2024
- International Business Machines Corporation
- Min Gyu Sung
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH DIELECTRIC WALL STRUCTURE AND METHOD F...
- Publication number 20240387632
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lung TUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY FIELD EFFECT TRANSISTOR WITH OBLIQUE CONDUCTIVE THROU...
- Publication number 20240387651
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Chih WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240387747
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chunchieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240387624
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Duckseoung KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN SIDE RECESS FOR BACK-SIDE POWER RAIL DEVICE
- Publication number 20240379783
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240379875
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Hung CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL (3D) DUAL COMPLEMENTARY CIRCUIT STRUCTURES AND RE...
- Publication number 20240379679
- Publication date Nov 14, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MATERIAL PROCESSING MODELING
- Publication number 20240378327
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Danping PENG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
AMBIPOLAR SEMICONDUCTOR-BASED TRANSISTOR AND METHOD
- Publication number 20240379833
- Publication date Nov 14, 2024
- King Abdullah University of Science and Technology
- Xiaohang LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING
- Publication number 20240379754
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Ging Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH COUNTER-DOPED NANOSTRUCTURES
- Publication number 20240379755
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiao-Chun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN REGIONS VERT...
- Publication number 20240379780
- Publication date Nov 14, 2024
- Samsung Electronics Co., Ltd.
- Keumseok PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE REDUCTION BY HALO-IMP TECHNOLOGY IN MESA REGION OF NANO SHE...
- Publication number 20240379663
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240379764
- Publication date Nov 14, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Yongliang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLACEHOLDER PROFILE FORMATION FOR BACKSIDE CONTACT
- Publication number 20240379769
- Publication date Nov 14, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379550
- Publication date Nov 14, 2024
- Samsung Electronics Co., Ltd.
- Heeseop Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240379760
- Publication date Nov 14, 2024
- Samsung Electronics Co., Ltd.
- Soon Yeol PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240379793
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shen-Yang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3DS FET AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240379794
- Publication date Nov 14, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION MODULE FORMATION FOR BACKSIDE POWER DELIVERY APPLICATION
- Publication number 20240379438
- Publication date Nov 14, 2024
- Applied Materials, Inc.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bonding and Isolation Techniques for Stacked Transistor Structures
- Publication number 20240379748
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Kan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE FOR STACKED MULTI-GATE DEVICE
- Publication number 20240379855
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED-SHAPED EXTENSION REGION(S) FOR GATE-ALL-AROUND (GAA) FIELD...
- Publication number 20240371924
- Publication date Nov 7, 2024
- QUALCOMM Incorporated
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS

with a one- or zero-dimensional channel

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for making nanostructure transistors with flush source/drain...

Gate all-around semiconductor device

Semiconductor device

Silicon and silicon germanium nanowire structures

Semiconductor device

Semiconductor device manufacturing method and plasma processing method

Semiconductor device including a gate-all-around field effect trans...

Method for making nanostructure transistors with offset source/drai...

Backside electrical contacts to buried power rails

Bonding and isolation techniques for stacked transistor structures

Transition metal dichalcogenide (TMD) layer stack for transistor ap...

Semiconductor device having fin-type field effect transistor and me...

Semiconductor structure, HEMT structure and method of forming the same

Contact structure for stacked multi-gate device

User model-based data loss prevention

Integrated circuit devices including discharging path and methods o...

Complementary field effect transistor devices

Semiconductor structure with nanofog oxide adhered to inert or weak...

Semiconductor structure and method for forming the same

Etching back and selective deposition of metal gate

Anisotropic sige:b epitaxial film growth for gate all around transi...

Back end of line nanowire power switch transistors

Selective silicon etch for gate all around transistors

Method of manufacturing a semiconductor device and a semiconductor...

Stacked transistors

Nanowire transistor fabrication with hardmask layers

Incorporating nitrogen in dipole engineering for multi-threshold vo...

Semiconductor device structure with nanostructure

Source/drain features

Method of forming source/drain regions with expanded widths

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

PACKAGE STRUCTURE WITH OPTICAL ELEMENTS AND METHOD FOR MANUFACTURIN...

SEMICONDUCTOR DEVICE INCLUDING AN ACTIVE PATTERN

METHOD OF FORMING TRANSISTORS OF DIFFERENT CONFIGURATIONS

NANOWIRE TRANSISTOR FABRICATION WITH HARDMASK LAYERS

INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF

SCALED 2T DRAM

SEMICONDUCTOR STRUCTURE WITH DIELECTRIC WALL STRUCTURE AND METHOD F...

COMPLEMENTARY FIELD EFFECT TRANSISTOR WITH OBLIQUE CONDUCTIVE THROU...

SEMICONDUCTOR DEVICE AND METHOD

INTEGRATED CIRCUIT DEVICE

DRAIN SIDE RECESS FOR BACK-SIDE POWER RAIL DEVICE

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

THREE-DIMENSIONAL (3D) DUAL COMPLEMENTARY CIRCUIT STRUCTURES AND RE...

MATERIAL PROCESSING MODELING

AMBIPOLAR SEMICONDUCTOR-BASED TRANSISTOR AND METHOD

SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING

SEMICONDUCTOR DEVICES WITH COUNTER-DOPED NANOSTRUCTURES

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN REGIONS VERT...

LEAKAGE REDUCTION BY HALO-IMP TECHNOLOGY IN MESA REGION OF NANO SHE...

GATE-ALL-AROUND TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

PLACEHOLDER PROFILE FORMATION FOR BACKSIDE CONTACT

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

3DS FET AND METHOD OF MANUFACTURING THE SAME

ISOLATION MODULE FORMATION FOR BACKSIDE POWER DELIVERY APPLICATION

Bonding and Isolation Techniques for Stacked Transistor Structures

CONTACT STRUCTURE FOR STACKED MULTI-GATE DEVICE

ENHANCED-SHAPED EXTENSION REGION(S) FOR GATE-ALL-AROUND (GAA) FIELD...