with a particular manufacturing method of the channel structures

Industry

CPC
H01L21/823807

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/823807with a particular manufacturing method of the channel structures

Industries

Patents Grantslast 30 patents

Information Patent Grant
Fabrication of nano-sheet transistors with different threshold volt...
- Patent number RE49954
- Issue date Apr 30, 2024
- TESSERA LLC
- Karthik Balakrishnan
Information Patent Grant
Nanosheet transistor with ferroelectric region
- Patent number 11,973,141
- Issue date Apr 30, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 11,967,594
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field-effect transistors in integrated circuits
- Patent number 11,968,819
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having nanosheet transistor and methods of fab...
- Patent number 11,961,840
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mao-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned metal gate for multigate device and method of forming...
- Patent number 11,961,763
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jia-Chuan You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,961,806
- Issue date Apr 16, 2024
- Samsung Electronics Co., Ltd.
- Noh Yeong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal silicide structures for advanced integrated circuit stru...
- Patent number 11,961,767
- Issue date Apr 16, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an epitaxy region
- Patent number 11,955,547
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Jen Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor device with nanostructure channels and manufa...
- Patent number 11,955,384
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Te Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,956,938
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tetsu Ohtou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulator device with partially recessed gate
- Patent number 11,948,977
- Issue date Apr 2, 2024
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device and related methods
- Patent number 11,949,016
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, integrated circuit and methods of manufacturi...
- Patent number 11,948,941
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Tse Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet field effect transistor with a source drain epitaxy repla...
- Patent number 11,942,374
- Issue date Mar 26, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Decoupling capacitors with back side power rails
- Patent number 11,942,413
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kam-Tou Sio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,942,552
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device with fin str...
- Patent number 11,942,375
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsing-Hui Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,935,924
- Issue date Mar 19, 2024
- Samsung Electronics Co., Ltd.
- Noh Yeong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with improved margin and performance and methods of f...
- Patent number 11,937,416
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-silicon N-type and P-type stacked transistors for integrated ci...
- Patent number 11,935,891
- Issue date Mar 19, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire stack GAA device with inner spacer
- Patent number 11,929,425
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tzu-Chung Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around device with different channel semiconductor materia...
- Patent number 11,929,288
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhe-Ching Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin loss prevention
- Patent number 11,923,250
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Ju Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,923,252
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and methods for generating a circuit with high density ro...
- Patent number 11,923,297
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-An Lai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Structures and methods of fabricating electronic devices using sepa...
- Patent number 11,915,983
- Issue date Feb 27, 2024
- APPLIED NOVEL DEVICES, INC.
- Leo Mathew
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE WITH DIELECTRIC PILLARS
- Publication number 20240145472
- Publication date May 2, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240145581
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ya-Wen CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH LOW RESISTANCE CONTACT
- Publication number 20240145555
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Heng Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240145569
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia YEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTOR STRUCTURE WITH INDEPENDENT GATE CON...
- Publication number 20240145473
- Publication date May 2, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240145474
- Publication date May 2, 2024
- Samsung Electronics Co., Ltd.
- Kyung ho KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20240145475
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- SHIH-WEI PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240145576
- Publication date May 2, 2024
- TOKYO ELECTRON LIMITED
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET WITH DUAL ISOLATION REGIONS SEPARATED BY BURIED INNER SPACER
- Publication number 20240145578
- Publication date May 2, 2024
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20240136355
- Publication date Apr 25, 2024
- Hyundai Motor Company
- Jong Seok Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ion Implantation For Nano-FET
- Publication number 20240136228
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240128267
- Publication date Apr 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Sheng Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING STANDARD CELL WITH A METAL LAYER HAVIN...
- Publication number 20240128159
- Publication date Apr 18, 2024
- Samsung Electronics Co., Ltd.
- Minjae JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND...
- Publication number 20240120337
- Publication date Apr 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240120398
- Publication date Apr 11, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE 3D CHANNELS WITH UPSILON NANOSHEETS
- Publication number 20240120375
- Publication date Apr 11, 2024
- TOKYO ELECTRON LIMITED
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACT...
- Publication number 20240120381
- Publication date Apr 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ding-Kang SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES
- Publication number 20240120239
- Publication date Apr 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN
- Publication number 20240112985
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE...
- Publication number 20240113162
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SUR...
- Publication number 20240113116
- Publication date Apr 4, 2024
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE
- Publication number 20240113120
- Publication date Apr 4, 2024
- SONY GROUP CORPORATION
- Hidetoshi OISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET)
- Publication number 20240113117
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE MOSFETS HAVING VARYING CHANNEL STRUCTURES
- Publication number 20240113119
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tetsu Ohtou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Gate Device And Related Methods
- Publication number 20240112959
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuan-Ting PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHO...
- Publication number 20240105854
- Publication date Mar 28, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SET OF INTEGRATED STANDARD CELLS
- Publication number 20240105730
- Publication date Mar 28, 2024
- STMicroelectronics France
- Olivier WEBER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...
- Publication number 20240105520
- Publication date Mar 28, 2024
- Intel Corporation
- Anthony ST. AMOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240105722
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...
- Publication number 20240105724
- Publication date Mar 28, 2024
- Samsung Electronics Co., Ltd.
- DONGHOON HWANG
- H01 - BASIC ELECTRIC ELEMENTS

with a particular manufacturing method of the channel structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Fabrication of nano-sheet transistors with different threshold volt...

Nanosheet transistor with ferroelectric region

Semiconductor device structure and methods of forming the same

Gate-all-around field-effect transistors in integrated circuits

Semiconductor device having nanosheet transistor and methods of fab...

Self-aligned metal gate for multigate device and method of forming...

Semiconductor device

Dual metal silicide structures for advanced integrated circuit stru...

Dual metal gate structure having portions of metal gate layers in c...

Semiconductor device including an epitaxy region

Stacked semiconductor device with nanostructure channels and manufa...

Heterogeneous metal line compositions for advanced integrated circu...

Semiconductor device and manufacturing method thereof

Silicon on insulator device with partially recessed gate

Multi-gate device and related methods

Trench contact structures for advanced integrated circuit structure...

Semiconductor device, integrated circuit and methods of manufacturi...

Nanosheet field effect transistor with a source drain epitaxy repla...

Decoupling capacitors with back side power rails

Method of manufacturing a semiconductor device and a semiconductor...

Structure and formation method of semiconductor device with fin str...

Semiconductor device and method of fabricating the same

Memory device with improved margin and performance and methods of f...

Non-silicon N-type and P-type stacked transistors for integrated ci...

Nanowire stack GAA device with inner spacer

Gate-all-around device with different channel semiconductor materia...

Fin loss prevention

Semiconductor device and method for manufacturing the same

Apparatus and methods for generating a circuit with high density ro...

Structures and methods of fabricating electronic devices using sepa...

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE WITH DIELECTRIC PILLARS

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

TRANSISTOR STRUCTURE WITH LOW RESISTANCE CONTACT

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

STACKED FIELD EFFECT TRANSISTOR STRUCTURE WITH INDEPENDENT GATE CON...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

NANOSHEET WITH DUAL ISOLATION REGIONS SEPARATED BY BURIED INNER SPACER

POWER SEMICONDUCTOR DEVICE

Ion Implantation For Nano-FET

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

INTEGRATED CIRCUIT INCLUDING STANDARD CELL WITH A METAL LAYER HAVIN...

SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

HIGH PERFORMANCE 3D CHANNELS WITH UPSILON NANOSHEETS

SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACT...

MULTI-GATE DEVICE FABRICATION METHODS AND RELATED STRUCTURES

FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN

MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE...

EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SUR...

COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE

VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET)

HIGH PERFORMANCE MOSFETS HAVING VARYING CHANNEL STRUCTURES

Multi-Gate Device And Related Methods

TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHO...

SET OF INTEGRATED STANDARD CELLS

TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...

SEMICONDUCTOR DEVICE

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...