with a particular manufacturing method of the channel structures

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H01L21/823807

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/823807with a particular manufacturing method of the channel structures

Industries

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional semiconductor device and method of fabricating th...
- Patent number 12,218,133
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures for semiconductor devices
- Patent number 12,218,013
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with backside interconnections and method of mak...
- Patent number 12,218,057
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Wei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for gate-all-around metal-oxide-semiconductor...
- Patent number 12,218,137
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having stacked transistors and backside power n...
- Patent number 12,218,058
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fish bone structure and methods of formin...
- Patent number 12,211,944
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,211,753
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices having highly integrated NMOS and PMOS t...
- Patent number 12,211,847
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Jaehoon Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a doped fin well
- Patent number 12,211,901
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bau-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors comprising a matrix of gate-all-around cha...
- Patent number 12,211,848
- Issue date Jan 28, 2025
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with threshold voltage modulation layer
- Patent number 12,213,297
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with channel pattern formed of stacked semicon...
- Patent number 12,211,941
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Donghyuk Yeom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fins for metal oxide semiconductor device structures
- Patent number 12,205,955
- Issue date Jan 21, 2025
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including multi-thickness nanowires
- Patent number 12,206,026
- Issue date Jan 21, 2025
- Samsung Electronics Co., Ltd.
- Seung Hun Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor structures and methods thereof
- Patent number 12,206,005
- Issue date Jan 21, 2025
- TAIWAN SEMICONDICTOR MANUFACTURING COMPANY, LTD.
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with source/drain structure and meth...
- Patent number 12,205,849
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and semiconductor device
- Patent number 12,199,187
- Issue date Jan 14, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seam free isolation structures and method for making the same
- Patent number 12,199,097
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Ruei Jhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method of manufacturing the same
- Patent number 12,199,099
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Jung-Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device integration with separated fin-like field effect...
- Patent number 12,199,100
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate line plug structures for advanced integrated circuit structure...
- Patent number 12,199,167
- Issue date Jan 14, 2025
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon channel tempering
- Patent number 12,199,190
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mao-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate electrode for applying tensile...
- Patent number 12,198,987
- Issue date Jan 14, 2025
- Renesas Electronics Corporation
- Hirokazu Sayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flip-flop with transistors having different threshold voltages, sem...
- Patent number 12,199,612
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Xing Chao Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plugs for interconnect lines for advanced integrated circuit struct...
- Patent number 12,199,168
- Issue date Jan 14, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual channel gate all around transistor device and fabrication meth...
- Patent number 12,198,986
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Sheng Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual strained semiconductor substrate and patterning
- Patent number 12,191,208
- Issue date Jan 7, 2025
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-implant channel semiconductor device and method for manufactur...
- Patent number 12,191,811
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,191,380
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ssu-Yu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low Ge isolated epitaxial layer growth over nano-sheet architecture...
- Patent number 12,191,393
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yan-Ting Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
WORK FUNCTION METAL PATTERNING AND GATE CUT FOR NANOSHEET DEVICE
- Publication number 20250056849
- Publication date Feb 13, 2025
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250056841
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jih-Chao CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH CONDUCT...
- Publication number 20250056848
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chu-Yuan HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN REGIONS IN COMPLEMENTARY FIELD EFFECT TRANSISTORS AND...
- Publication number 20250056852
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056861
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- SOOJIN JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-COUPLED GATE DESIGN FOR STACKED DEVICE WITH SEPARATED TOP-DOW...
- Publication number 20250056873
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Seunghyun SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING BOTTOM DIELECTRIC ISOLATION LAYERS
- Publication number 20250056871
- Publication date Feb 13, 2025
- Applied Materials, Inc.
- San-Kuei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Efficient FET Body and Substrate Contacts
- Publication number 20250056875
- Publication date Feb 13, 2025
- MURATA MANUFACTURING CO., LTD.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR MANUFACTURING THE...
- Publication number 20250048704
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hong-Chih CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME
- Publication number 20250048689
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20250048703
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yu Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
One-Time Programming Memory Device with Backside Isolation Structure
- Publication number 20250048686
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ping-Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20250048706
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Jui WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250048725
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-I Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...
- Publication number 20250040242
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Keumseok Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING EXTENDED SOURCE/DRAIN CONTACT AND METHOD
- Publication number 20250040183
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTOR HYBRID GATE CUT
- Publication number 20250040240
- Publication date Jan 30, 2025
- International Business Machines Corporation
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250040200
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Sheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250040214
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250040241
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Sung Il PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR THERMAL DISSIPATION
- Publication number 20250031413
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che Chi SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE MANUFACTURED USING CHANNEL SPACER
- Publication number 20250031444
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SEMICON...
- Publication number 20250031436
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Chih HOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20250031441
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng-Ming CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME
- Publication number 20250031435
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD-EFFECT TRANSISTO...
- Publication number 20250022773
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- JINTAE KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Volume-Less Dipole Incorporation into CFET Having Common Gate
- Publication number 20250022879
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Jui Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE REDUCTION OR REMOVAL BETWEEN DUAL MIDDLE DIELECTRIC ISOLATION
- Publication number 20250022880
- Publication date Jan 16, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH IMPROVED GATE CONTROL
- Publication number 20250022940
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Chun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS

with a particular manufacturing method of the channel structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Three-dimensional semiconductor device and method of fabricating th...

Gate structures for semiconductor devices

Integrated circuit with backside interconnections and method of mak...

Structure and method for gate-all-around metal-oxide-semiconductor...

Integrated circuits having stacked transistors and backside power n...

Semiconductor device with fish bone structure and methods of formin...

Semiconductor device

Integrated circuit devices having highly integrated NMOS and PMOS t...

Semiconductor device having a doped fin well

Field effect transistors comprising a matrix of gate-all-around cha...

Semiconductor devices with threshold voltage modulation layer

Semiconductor device with channel pattern formed of stacked semicon...

Fins for metal oxide semiconductor device structures

Semiconductor device including multi-thickness nanowires

Semiconductor structures and methods thereof

Semiconductor device structure with source/drain structure and meth...

Transistor and semiconductor device

Seam free isolation structures and method for making the same

Semiconductor devices and method of manufacturing the same

Multi-gate device integration with separated fin-like field effect...

Gate line plug structures for advanced integrated circuit structure...

Silicon channel tempering

Semiconductor device including gate electrode for applying tensile...

Flip-flop with transistors having different threshold voltages, sem...

Plugs for interconnect lines for advanced integrated circuit struct...

Dual channel gate all around transistor device and fabrication meth...

Dual strained semiconductor substrate and patterning

High-implant channel semiconductor device and method for manufactur...

Semiconductor device and method

Low Ge isolated epitaxial layer growth over nano-sheet architecture...

Patents Applicationslast 30 patents

WORK FUNCTION METAL PATTERNING AND GATE CUT FOR NANOSHEET DEVICE

INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH CONDUCT...

SOURCE/DRAIN REGIONS IN COMPLEMENTARY FIELD EFFECT TRANSISTORS AND...

SEMICONDUCTOR DEVICE

CROSS-COUPLED GATE DESIGN FOR STACKED DEVICE WITH SEPARATED TOP-DOW...

METHODS OF FORMING BOTTOM DIELECTRIC ISOLATION LAYERS

Efficient FET Body and Substrate Contacts

SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR MANUFACTURING THE...

STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

One-Time Programming Memory Device with Backside Isolation Structure

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...

DEVICE HAVING EXTENDED SOURCE/DRAIN CONTACT AND METHOD

STACKED FIELD EFFECT TRANSISTOR HYBRID GATE CUT

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR THERMAL DISSIPATION

3D-STACKED SEMICONDUCTOR DEVICE MANUFACTURED USING CHANNEL SPACER

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SEMICON...

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME

INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD-EFFECT TRANSISTO...

Volume-Less Dipole Incorporation into CFET Having Common Gate

GATE REDUCTION OR REMOVAL BETWEEN DUAL MIDDLE DIELECTRIC ISOLATION

SEMICONDUCTOR DEVICES WITH IMPROVED GATE CONTROL

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...