with a particular manufacturing method of the gate sidewall spacers

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H01L21/823864

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/823864with a particular manufacturing method of the gate sidewall spacers

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with fin transistors and manufacturing method...
- Patent number 12,170,282
- Issue date Dec 17, 2024
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and manufacturing method thereof
- Patent number 12,166,040
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based field effect transistors
- Patent number 12,154,903
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,154,962
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,148,810
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Hang Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for boosting performance of FinFETs via strained...
- Patent number 12,148,830
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kai-Chieh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming finFET with low-dielectric-constant gate electrod...
- Patent number 12,148,832
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ka-Hing Fung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate structures and methods of forming the same
- Patent number 12,142,659
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate structures and methods of forming the same
- Patent number 12,142,655
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy fin between first and second semiconductor fins
- Patent number 12,142,609
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with doped low-k sidewall spacers for gate stacks
- Patent number 12,136,658
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating FinFETs having different fin numbers and co...
- Patent number 12,136,571
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate spacers extending below a fin top...
- Patent number 12,125,891
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air spacers in transistors and methods forming same
- Patent number 12,125,897
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Lun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air spacer and method of forming same
- Patent number 12,107,149
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Jhe Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,107,172
- Issue date Oct 1, 2024
- Samsung Electronics Co., Ltd.
- Seungmin Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and method
- Patent number 12,100,748
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain epitaxial structures for semiconductor devices
- Patent number 12,100,626
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM speed and margin optimization via spacer tuning
- Patent number 12,101,921
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Hao Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,087,637
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures in transistors and method of forming same
- Patent number 12,087,587
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor structure with fins using a multil...
- Patent number 12,087,641
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive feature formation and structure
- Patent number 12,087,575
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for FinFET device with source/drain modulation
- Patent number 12,080,607
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain structures and method of forming
- Patent number 12,074,071
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of forming the same
- Patent number 12,068,386
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Latch-up prevention
- Patent number 12,062,721
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate spacer structure and method of forming same
- Patent number 12,062,709
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Ting Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with funnel shape spacer and methods of formin...
- Patent number 12,051,628
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device and related methods
- Patent number 12,040,405
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SOURCE/DRAIN PROTECTION USING A BACKSIDE PLACEHOLDER
- Publication number 20240421037
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Lijuan Zou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413252
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Seungmin SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Plugs With Reduced R/C and the Methods of Forming The Same
- Publication number 20240413020
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Min-Hsiu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN JOG STRUCTURE AND METHODS OF MAKING SAME
- Publication number 20240405097
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin-Based Field Effect Transistors
- Publication number 20240395818
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthias PASSLACK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH THRESHOLD VOLTAGE MODULATION LAYER
- Publication number 20240397694
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD OF FORMING SAME
- Publication number 20240387237
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Cyuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multigate Devices with Varying Channel Layers
- Publication number 20240387743
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Kuan-Lun Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE AND METHOD
- Publication number 20240387677
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20240387681
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH ALTERNATE COMPLEMENTARY CHANNELS AND FABRICATION METHOD...
- Publication number 20240387545
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Ya LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE STRUCTURES
- Publication number 20240379809
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE FOR SEMICONDUCTOR DEVICE
- Publication number 20240379810
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Hang Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR SPACER AND METHOD OF FORMING SAME
- Publication number 20240379820
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Jhe Sie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Regions and Methods of Forming Same
- Publication number 20240379454
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hui-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND DEVICE FOR BOOSTING PERFORMANCE OF FINFETS VIA STRAINED...
- Publication number 20240379849
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Chieh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379364
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Fabricating FinFETs Having Different Fin Numbers and Co...
- Publication number 20240379445
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240371636
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SRAM SPEED AND MARGIN OPTIMIZATION VIA SPACER TUNING
- Publication number 20240373614
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Shih-Hao Lin
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE GATE STRUCTURES
- Publication number 20240371963
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATCH-UP PREVENTION
- Publication number 20240363759
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240363424
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAISED SOURCE/DRAIN TRANSISTOR
- Publication number 20240363434
- Publication date Oct 31, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Manoj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES IN TRANSISTORS AND METHOD OF FORMING SAME
- Publication number 20240363351
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20240363436
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Ting KO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Structures and Method of Forming
- Publication number 20240363443
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FUNNEL SHAPE SPACER AND METHODS OF FORMIN...
- Publication number 20240363426
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE FEATURE FORMATION AND STRUCTURE
- Publication number 20240363339
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR FINFET DEVICE WITH SOURCE/DRAIN MODULATION
- Publication number 20240363435
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS

with a particular manufacturing method of the gate sidewall spacers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device with fin transistors and manufacturing method...

Integrated circuit and manufacturing method thereof

Fin-based field effect transistors

Semiconductor device and manufacturing method thereof

Semiconductor device and method

Method and device for boosting performance of FinFETs via strained...

Method of forming finFET with low-dielectric-constant gate electrod...

Transistor gate structures and methods of forming the same

Transistor gate structures and methods of forming the same

Dummy fin between first and second semiconductor fins

Integrated circuit with doped low-k sidewall spacers for gate stacks

Methods for fabricating FinFETs having different fin numbers and co...

Semiconductor device having gate spacers extending below a fin top...

Air spacers in transistors and methods forming same

Air spacer and method of forming same

Semiconductor device

Gate structure and method

Source/drain epitaxial structures for semiconductor devices

SRAM speed and margin optimization via spacer tuning

Semiconductor device and method of manufacture

Gate structures in transistors and method of forming same

Method for forming semiconductor structure with fins using a multil...

Conductive feature formation and structure

Structure and method for FinFET device with source/drain modulation

Source/drain structures and method of forming

Semiconductor devices and methods of forming the same

Latch-up prevention

Gate spacer structure and method of forming same

Semiconductor device with funnel shape spacer and methods of formin...

Multi-gate device and related methods

Patents Applicationslast 30 patents

SOURCE/DRAIN PROTECTION USING A BACKSIDE PLACEHOLDER

SEMICONDUCTOR DEVICE

Contact Plugs With Reduced R/C and the Methods of Forming The Same

FIN JOG STRUCTURE AND METHODS OF MAKING SAME

Fin-Based Field Effect Transistors

SEMICONDUCTOR DEVICES WITH THRESHOLD VOLTAGE MODULATION LAYER

FINFET DEVICE AND METHOD OF FORMING SAME

Multigate Devices with Varying Channel Layers

GATE STRUCTURE AND METHOD

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

DEVICE WITH ALTERNATE COMPLEMENTARY CHANNELS AND FABRICATION METHOD...

TRANSISTOR GATE STRUCTURES

GATE STRUCTURE FOR SEMICONDUCTOR DEVICE

AIR SPACER AND METHOD OF FORMING SAME

Source/Drain Regions and Methods of Forming Same

METHOD AND DEVICE FOR BOOSTING PERFORMANCE OF FINFETS VIA STRAINED...

SEMICONDUCTOR DEVICES

Methods for Fabricating FinFETs Having Different Fin Numbers and Co...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

SRAM SPEED AND MARGIN OPTIMIZATION VIA SPACER TUNING

SEMICONDUCTOR DEVICE GATE STRUCTURES

LATCH-UP PREVENTION

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

RAISED SOURCE/DRAIN TRANSISTOR

GATE STRUCTURES IN TRANSISTORS AND METHOD OF FORMING SAME

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

Source/Drain Structures and Method of Forming

SEMICONDUCTOR DEVICE WITH FUNNEL SHAPE SPACER AND METHODS OF FORMIN...

CONDUCTIVE FEATURE FORMATION AND STRUCTURE

STRUCTURE AND METHOD FOR FINFET DEVICE WITH SOURCE/DRAIN MODULATION