with a particular manufacturing method of the gate sidewall spacers

Industry

CPC
H01L21/823468

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/823468with a particular manufacturing method of the gate sidewall spacers

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices including dummy gate dielectric layer and met...
- Patent number 12,230,545
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,224,325
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap formation between gate spacer and epitaxy structure
- Patent number 12,218,138
- Issue date Feb 4, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Bo-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 12,218,227
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and method with solid phase diffusion
- Patent number 12,218,203
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Yi Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with etch stop layer for reducing RC...
- Patent number 12,218,241
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device in narrow slots within trench
- Patent number 12,218,195
- Issue date Feb 4, 2025
- Tokyo Electron Limited
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,218,196
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor devices having gate spacers...
- Patent number 12,218,216
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method for fabricating the same
- Patent number 12,211,845
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Ku Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices having highly integrated NMOS and PMOS t...
- Patent number 12,211,847
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Jaehoon Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 12,211,924
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar buried channel structure integrated with non-planar structures
- Patent number 12,205,947
- Issue date Jan 21, 2025
- Intel Corporation
- Guannan Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method of manufacturing the same
- Patent number 12,199,099
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Jung-Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a multi-gate device having a semiconductor...
- Patent number 12,199,170
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei Ju Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate isolation layer
- Patent number 12,199,096
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Seung Seok Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate spacer with tilted portion and...
- Patent number 12,198,984
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing fin spacers having different heights using...
- Patent number 12,191,206
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with gate isolation features and fabrication m...
- Patent number 12,183,799
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Chien Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing parasitic capacitance for gate-all-around device by formin...
- Patent number 12,183,808
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device by driving hydrogen into a...
- Patent number 12,183,581
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hongfa Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varying temperature anneal for film and structures formed thereby
- Patent number 12,176,206
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu Ling Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire/nanosheet device with support portion, method of manufactu...
- Patent number 12,176,393
- Issue date Dec 24, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Input/output devices
- Patent number 12,176,347
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact features and methods of fabricating the same in Fin field-e...
- Patent number 12,170,245
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device structure having dielectric features between a plural...
- Patent number 12,165,926
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Ting Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for gate-all-around devices
- Patent number 12,166,075
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,166,041
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,159,921
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- I-Chih Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including spacer structure for transistors
- Patent number 12,159,912
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NANOSHEET BASED EXTENDED-GATE DEVICE INTEGRATION
- Publication number 20250072116
- Publication date Feb 27, 2025
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250072082
- Publication date Feb 27, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- I-Chih CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063781
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shiang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250063788
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Sang Min CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPECIALIZED TRANSISTORS
- Publication number 20250063791
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT GATE ISOLATION
- Publication number 20250063792
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE/NANOSHEET DEVICE WITH CRYSTAL SPACER AND METHOD OF MANUFAC...
- Publication number 20250056850
- Publication date Feb 13, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING SPACER STRUCTURE FOR TRANSISTORS
- Publication number 20250056867
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUS, FABRICATION METHOD THEREOF AND MEMORY SYSTEM
- Publication number 20250048705
- Publication date Feb 6, 2025
- Yangtze Memory Technologies Co., Ltd.
- Xuelian YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTOR HAVING SUBSTANTIALLY PARALLELPIPED-SHAPED INSULATING...
- Publication number 20250040165
- Publication date Jan 30, 2025
- STMicroelectronics (Rousset) SAS
- Arnaud REGNIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Formation With Staggered Gate Patterning
- Publication number 20250040184
- Publication date Jan 30, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Spacer Structures And Methods For Forming The Same
- Publication number 20250040218
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS
- Publication number 20250031446
- Publication date Jan 23, 2025
- Intel Corporation
- Walid M. HAFEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THE...
- Publication number 20250029926
- Publication date Jan 23, 2025
- Intel Corporation
- Bernhard SELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250031417
- Publication date Jan 23, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE HARD MASK DESIGN FOR IMPROVED SOURCE/DRAIN FORMATION
- Publication number 20250022938
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yao-Hsuan Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Contact with Low-K Contact Etch Stop Layer and Method...
- Publication number 20250022931
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., LTD
- Ting-Yeh CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH IMPROVED SOURCE/DRAIN PROFILE AND METHODS...
- Publication number 20250022914
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu KAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH DIELECTRIC SPACERS AND METHODS OF FABRICATION THEREOF
- Publication number 20250006818
- Publication date Jan 2, 2025
- NXP USA, Inc.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR SOURCE/DRAIN REGIONS
- Publication number 20240405070
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dielectric Layer on Semiconductor Device and Method of Forming the...
- Publication number 20240395912
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-I Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240395810
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SOURCE/DRAIN CONTACT STRUCT...
- Publication number 20240395900
- Publication date Nov 28, 2024
- Samsung Electronics Co., Ltd.
- Seungchan YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK
- Publication number 20240387691
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INPUT/OUTPUT DEVICES
- Publication number 20240387531
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD
- Publication number 20240387701
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsai-Jung Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY ETCHED SPACERS FOR SEMICONDUCTOR DEVICE
- Publication number 20240387692
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yu KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS THEREOF
- Publication number 20240387737
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING PARASITIC CHANNEL STRUCTURES
- Publication number 20240387633
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Cheng SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379364
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS

with a particular manufacturing method of the gate sidewall spacers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor devices including dummy gate dielectric layer and met...

Semiconductor device and manufacturing method thereof

Air gap formation between gate spacer and epitaxy structure

Semiconductor structure

Integrated circuit structure and method with solid phase diffusion

Semiconductor device structure with etch stop layer for reducing RC...

Vertical semiconductor device in narrow slots within trench

Semiconductor device and method of manufacture

Method for manufacturing semiconductor devices having gate spacers...

Semiconductor device and a method for fabricating the same

Integrated circuit devices having highly integrated NMOS and PMOS t...

Semiconductor device and method of forming the same

Planar buried channel structure integrated with non-planar structures

Semiconductor devices and method of manufacturing the same

Method of manufacturing a multi-gate device having a semiconductor...

Semiconductor device having gate isolation layer

Semiconductor device including gate spacer with tilted portion and...

Method of manufacturing fin spacers having different heights using...

Semiconductor device with gate isolation features and fabrication m...

Reducing parasitic capacitance for gate-all-around device by formin...

Method of forming a semiconductor device by driving hydrogen into a...

Varying temperature anneal for film and structures formed thereby

Nanowire/nanosheet device with support portion, method of manufactu...

Input/output devices

Contact features and methods of fabricating the same in Fin field-e...

FinFET device structure having dielectric features between a plural...

Method and structure for gate-all-around devices

Semiconductor device and method

Semiconductor device and method of manufacturing the same

Integrated circuit including spacer structure for transistors

Patents Applicationslast 30 patents

NANOSHEET BASED EXTENDED-GATE DEVICE INTEGRATION

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SPECIALIZED TRANSISTORS

CONTACT GATE ISOLATION

NANOWIRE/NANOSHEET DEVICE WITH CRYSTAL SPACER AND METHOD OF MANUFAC...

INTEGRATED CIRCUIT INCLUDING SPACER STRUCTURE FOR TRANSISTORS

SEMICONDUCTOR APPARATUS, FABRICATION METHOD THEREOF AND MEMORY SYSTEM

MOS TRANSISTOR HAVING SUBSTANTIALLY PARALLELPIPED-SHAPED INSULATING...

Contact Formation With Staggered Gate Patterning

Gate Spacer Structures And Methods For Forming The Same

HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS

METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THE...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

GATE HARD MASK DESIGN FOR IMPROVED SOURCE/DRAIN FORMATION

Source/Drain Contact with Low-K Contact Etch Stop Layer and Method...

SEMICONDUCTOR DEVICE WITH IMPROVED SOURCE/DRAIN PROFILE AND METHODS...

TRANSISTORS WITH DIELECTRIC SPACERS AND METHODS OF FABRICATION THEREOF

TRANSISTOR SOURCE/DRAIN REGIONS

Dielectric Layer on Semiconductor Device and Method of Forming the...

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SOURCE/DRAIN CONTACT STRUCT...

SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK

INPUT/OUTPUT DEVICES

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD

LATERALLY ETCHED SPACERS FOR SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS THEREOF

SEMICONDUCTOR DEVICES HAVING PARASITIC CHANNEL STRUCTURES

SEMICONDUCTOR DEVICES