with a particular manufacturing method of the gate sidewall spacers

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H01L21/823468

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/823468with a particular manufacturing method of the gate sidewall spacers

Industries

Patents Grantslast 30 patents

Information Patent Grant
Gate spacers and methods of forming the same in semiconductor devices
- Patent number 11,967,532
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally-diffused metal-oxide semiconductor transistor and method...
- Patent number 11,961,907
- Issue date Apr 16, 2024
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a gate structure
- Patent number 11,955,523
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Namgyu Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming air spacers in semiconductor devices
- Patent number 11,955,535
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,956,938
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tetsu Ohtou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming nitrogen-containing low-K gate spacer
- Patent number 11,948,841
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor structure
- Patent number 11,942,475
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 11,942,478
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jui-Chien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 11,935,792
- Issue date Mar 19, 2024
- SK Hynix Inc.
- Dong-Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing thereof
- Patent number 11,935,941
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Hsuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Geometry for threshold voltage tuning on semiconductor device
- Patent number 11,935,957
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 11,935,954
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bwo-Ning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric liner for field effect transistors
- Patent number 11,929,287
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zhi-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate isolation layer
- Patent number 11,929,367
- Issue date Mar 12, 2024
- Samsung Electronics Co., Ltd.
- Seung Seok Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming fin field effect transistor (FinFET) device stru...
- Patent number 11,923,359
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit (IC) device
- Patent number 11,923,362
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Myung-gil Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,923,358
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Pin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,923,432
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yoh-Rong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having epitaxy source/drain regions
- Patent number 11,916,071
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact formation method and related structure
- Patent number 11,915,971
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate methods that include treating spacers to widen gate
- Patent number 11,908,695
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having late-formed isolation structures
- Patent number 11,908,857
- Issue date Feb 20, 2024
- GLOBALFOUNDRIES U.S. INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 11,908,746
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 11,901,441
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET devices with a backside power rail and a backside self-align...
- Patent number 11,901,456
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shi Ning Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric isolation layer between a nanowire transistor and a subs...
- Patent number 11,901,458
- Issue date Feb 13, 2024
- Intel Corporation
- Bruce E. Beattie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,901,439
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method of manufacturing the same
- Patent number 11,894,379
- Issue date Feb 6, 2024
- Samsung Electronics Co., Ltd.
- Jung-Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact resistance reduction in nanosheet device structure
- Patent number 11,894,423
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage three-dimensional devices having dielectric liners
- Patent number 11,881,486
- Issue date Jan 23, 2024
- Intel Corporation
- Walid M. Hafez
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INNER SPACERS FOR GATE-ALL-AROUND SEMICONDUCTOR DEVICES
- Publication number 20240136438
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Yun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20240136428
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-TRANSISTOR STRUCTURE WITH PRECISE GEOMETRIES
- Publication number 20240128357
- Publication date Apr 18, 2024
- Invention And Collaboration Laboratory Pte. Ltd.
- Chao-Chun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE
- Publication number 20240128126
- Publication date Apr 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER FORMATION METHOD FOR MULTI-GATE DEVICE AND STRUCTURES THEREOF
- Publication number 20240113203
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS
- Publication number 20240113128
- Publication date Apr 4, 2024
- Intel Corporation
- Walid M. HAFEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER STRUCTURE AND METHODS OF FORMING SUCH
- Publication number 20240105814
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC SOURCE/DRAIN EPITAXY
- Publication number 20240105516
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240105775
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Yu CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH FINFET GATE STRUCTURES
- Publication number 20240105719
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240105817
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-He Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240096705
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240096892
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- JHON JHY LIAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE
- Publication number 20240088155
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Yu LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEIGHBORING GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DI...
- Publication number 20240088142
- Publication date Mar 14, 2024
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Gate Devices With Reduced Contact Resistance And Methods Of F...
- Publication number 20240079465
- Publication date Mar 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
- Publication number 20240072157
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHANSYUN DAVID YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240063284
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Te TU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240063275
- Publication date Feb 22, 2024
- Samsung Electronics Co., Ltd.
- Sang Hoon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240055479
- Publication date Feb 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Ting PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES WITH METAL OXIDE-CAPED CONTACTS...
- Publication number 20240047543
- Publication date Feb 8, 2024
- Intel Corporation
- Rami HOURANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING FIELD EFFECT TRANSISTOR WITH SCAL...
- Publication number 20240047555
- Publication date Feb 8, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anton V. Tokranov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20240049444
- Publication date Feb 8, 2024
- Changxin Memory Technologies, Inc.
- Kang YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE PROFILE TUNING FOR MULTIGATE DEVICE
- Publication number 20240038872
- Publication date Feb 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-I Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A SELF-ALIGNED CONTACT LAYER WITH EN...
- Publication number 20240030311
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- I-Ming CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240030317
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Heng-Wen TING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING EPITAXIAL FEATURES
- Publication number 20240030220
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Yang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING FERROELECTRIC OR NEGATIVE CAPACITANCE MATERIAL AND ME...
- Publication number 20240030313
- Publication date Jan 25, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH POWER RAIL
- Publication number 20240021708
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Ting LAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240021618
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Yun Chin
- H01 - BASIC ELECTRIC ELEMENTS

with a particular manufacturing method of the gate sidewall spacers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Gate spacers and methods of forming the same in semiconductor devices

Laterally-diffused metal-oxide semiconductor transistor and method...

Semiconductor device including a gate structure

Methods for forming air spacers in semiconductor devices

Semiconductor device and manufacturing method thereof

Forming nitrogen-containing low-K gate spacer

High voltage transistor structure

Semiconductor device structure and methods of forming the same

Semiconductor device having buried gate structure and method for fa...

Semiconductor structure and method for manufacturing thereof

Geometry for threshold voltage tuning on semiconductor device

Semiconductor device structure and method for forming the same

Dielectric liner for field effect transistors

Semiconductor device having gate isolation layer

Method for forming fin field effect transistor (FinFET) device stru...

Integrated circuit (IC) device

Semiconductor device and manufacturing method thereof

Semiconductor device and method

Semiconductor device having epitaxy source/drain regions

Contact formation method and related structure

Replacement gate methods that include treating spacers to widen gate

Semiconductor devices having late-formed isolation structures

Semiconductor devices and methods of manufacturing thereof

Fin field-effect transistor and method of forming the same

FinFET devices with a backside power rail and a backside self-align...

Dielectric isolation layer between a nanowire transistor and a subs...

Semiconductor device and method

Semiconductor devices and method of manufacturing the same

Contact resistance reduction in nanosheet device structure

High voltage three-dimensional devices having dielectric liners

Patents Applicationslast 30 patents

INNER SPACERS FOR GATE-ALL-AROUND SEMICONDUCTOR DEVICES

Semiconductor Device and Method

3D-TRANSISTOR STRUCTURE WITH PRECISE GEOMETRIES

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE

SPACER FORMATION METHOD FOR MULTI-GATE DEVICE AND STRUCTURES THEREOF

HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS

INNER SPACER STRUCTURE AND METHODS OF FORMING SUCH

ASYMMETRIC SOURCE/DRAIN EPITAXY

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

INTEGRATED CIRCUITS WITH FINFET GATE STRUCTURES

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

AIR GAP FORMATION BETWEEN GATE SPACER AND EPITAXY STRUCTURE

NEIGHBORING GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DI...

Multi-Gate Devices With Reduced Contact Resistance And Methods Of F...

SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE

SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME

CONTACT OVER ACTIVE GATE STRUCTURES WITH METAL OXIDE-CAPED CONTACTS...

SEMICONDUCTOR STRUCTURE INCLUDING FIELD EFFECT TRANSISTOR WITH SCAL...

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

GATE PROFILE TUNING FOR MULTIGATE DEVICE

SEMICONDUCTOR DEVICE INCLUDING A SELF-ALIGNED CONTACT LAYER WITH EN...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD OF FORMING EPITAXIAL FEATURES

DEVICE HAVING FERROELECTRIC OR NEGATIVE CAPACITANCE MATERIAL AND ME...

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH POWER RAIL

SEMICONDUCTOR DEVICE AND METHOD