with a particular manufacturing method of the gate sidewall spacers

Industry

CPC
H01L21/823468

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/823468with a particular manufacturing method of the gate sidewall spacers

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a semiconductor device by driving hydrogen into a...
- Patent number 12,183,581
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hongfa Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with gate isolation features and fabrication m...
- Patent number 12,183,799
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Chien Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing parasitic capacitance for gate-all-around device by formin...
- Patent number 12,183,808
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varying temperature anneal for film and structures formed thereby
- Patent number 12,176,206
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu Ling Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire/nanosheet device with support portion, method of manufactu...
- Patent number 12,176,393
- Issue date Dec 24, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Input/output devices
- Patent number 12,176,347
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact features and methods of fabricating the same in Fin field-e...
- Patent number 12,170,245
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device structure having dielectric features between a plural...
- Patent number 12,165,926
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Ting Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for gate-all-around devices
- Patent number 12,166,075
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,166,041
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,159,921
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- I-Chih Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including spacer structure for transistors
- Patent number 12,159,912
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method
- Patent number 12,154,973
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsai-Jung Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor structures
- Patent number 12,148,752
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming finFET with low-dielectric-constant gate electrod...
- Patent number 12,148,832
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ka-Hing Fung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming stacked trench contacts and structures formed the...
- Patent number 12,142,566
- Issue date Nov 12, 2024
- Intel Corporation
- Bernhard Sell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gate structure with different lengths...
- Patent number 12,142,666
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Yu Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,142,650
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Sang Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with doped low-k sidewall spacers for gate stacks
- Patent number 12,136,658
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage three-dimensional devices having dielectric liners
- Patent number 12,136,628
- Issue date Nov 5, 2024
- Intel Corporation
- Walid M. Hafez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating FinFETs having different fin numbers and co...
- Patent number 12,136,571
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with metal gate stack
- Patent number 12,132,096
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain contact with low-k contact etch stop layer and method...
- Patent number 12,125,889
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ting-Yeh Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor having substantially parallelepiped-shaped insulatin...
- Patent number 12,125,899
- Issue date Oct 22, 2024
- STMicroelectronics (Rousset) SAS
- Arnaud Regnier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,125,750
- Issue date Oct 22, 2024
- Samsung Electronics Co., Ltd.
- Sang Hyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for FinFET isolation
- Patent number 12,125,751
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate spacers extending below a fin top...
- Patent number 12,125,891
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air spacers in transistors and methods forming same
- Patent number 12,125,897
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Lun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor with wrap-around contact structure
- Patent number 12,119,346
- Issue date Oct 15, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate spacer structures and methods for forming the same
- Patent number 12,119,390
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTORS WITH DIELECTRIC SPACERS AND METHODS OF FABRICATION THEREOF
- Publication number 20250006818
- Publication date Jan 2, 2025
- NXP USA, Inc.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR SOURCE/DRAIN REGIONS
- Publication number 20240405070
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dielectric Layer on Semiconductor Device and Method of Forming the...
- Publication number 20240395912
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-I Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240395810
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SOURCE/DRAIN CONTACT STRUCT...
- Publication number 20240395900
- Publication date Nov 28, 2024
- Samsung Electronics Co., Ltd.
- Seungchan YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INPUT/OUTPUT DEVICES
- Publication number 20240387531
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK
- Publication number 20240387691
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD
- Publication number 20240387701
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsai-Jung Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY ETCHED SPACERS FOR SEMICONDUCTOR DEVICE
- Publication number 20240387692
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yu KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS THEREOF
- Publication number 20240387737
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING PARASITIC CHANNEL STRUCTURES
- Publication number 20240387633
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Cheng SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379682
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379683
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379364
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TRANSISTOR STRUCTURES
- Publication number 20240379671
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20240379751
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Fabricating FinFETs Having Different Fin Numbers and Co...
- Publication number 20240379445
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240371644
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED-SHAPED EXTENSION REGION(S) FOR GATE-ALL-AROUND (GAA) FIELD...
- Publication number 20240371924
- Publication date Nov 7, 2024
- QUALCOMM Incorporated
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR SOURCE/DRAIN REGIONS
- Publication number 20240371930
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yan-Ting Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240371866
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240371978
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSTRUCTURES AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240371960
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor With Void and Method of Forming The Same
- Publication number 20240371980
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsu Ming Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure and manufacturing method thereof
- Publication number 20240371699
- Publication date Nov 7, 2024
- UNITED MICROELECTRONICS CORP.
- Ching-Ling Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240363424
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Contact Hard Mask Structure of Semiconductor Device an...
- Publication number 20240363713
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsai-Jung Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20240363431
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chang Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFETS WITH EPITAXY REGIONS HAVING MIXED WAVY AND NON-WAVY PORTIONS
- Publication number 20240363420
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET PITCH SCALING
- Publication number 20240363629
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Kuan-Ting PAN
- H01 - BASIC ELECTRIC ELEMENTS

with a particular manufacturing method of the gate sidewall spacers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of forming a semiconductor device by driving hydrogen into a...

Semiconductor device with gate isolation features and fabrication m...

Reducing parasitic capacitance for gate-all-around device by formin...

Varying temperature anneal for film and structures formed thereby

Nanowire/nanosheet device with support portion, method of manufactu...

Input/output devices

Contact features and methods of fabricating the same in Fin field-e...

FinFET device structure having dielectric features between a plural...

Method and structure for gate-all-around devices

Semiconductor device and method

Semiconductor device and method of manufacturing the same

Integrated circuit including spacer structure for transistors

Fin field-effect transistor device and method

High voltage transistor structures

Method of forming finFET with low-dielectric-constant gate electrod...

Method of forming stacked trench contacts and structures formed the...

Semiconductor device having a gate structure with different lengths...

Semiconductor device

Integrated circuit with doped low-k sidewall spacers for gate stacks

High voltage three-dimensional devices having dielectric liners

Methods for fabricating FinFETs having different fin numbers and co...

Semiconductor device structure with metal gate stack

Source/drain contact with low-k contact etch stop layer and method...

MOS transistor having substantially parallelepiped-shaped insulatin...

Semiconductor device and method for fabricating the same

Method and structure for FinFET isolation

Semiconductor device having gate spacers extending below a fin top...

Air spacers in transistors and methods forming same

Vertical field-effect transistor with wrap-around contact structure

Gate spacer structures and methods for forming the same

Patents Applicationslast 30 patents

TRANSISTORS WITH DIELECTRIC SPACERS AND METHODS OF FABRICATION THEREOF

TRANSISTOR SOURCE/DRAIN REGIONS

Dielectric Layer on Semiconductor Device and Method of Forming the...

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SOURCE/DRAIN CONTACT STRUCT...

INPUT/OUTPUT DEVICES

SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD

LATERALLY ETCHED SPACERS FOR SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS THEREOF

SEMICONDUCTOR DEVICES HAVING PARASITIC CHANNEL STRUCTURES

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICES

HIGH VOLTAGE TRANSISTOR STRUCTURES

Semiconductor Device and Method of Manufacture

Methods for Fabricating FinFETs Having Different Fin Numbers and Co...

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME

ENHANCED-SHAPED EXTENSION REGION(S) FOR GATE-ALL-AROUND (GAA) FIELD...

TRANSISTOR SOURCE/DRAIN REGIONS

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

NANOSTRUCTURES AND METHOD FOR MANUFACTURING THE SAME

Fin Field-Effect Transistor With Void and Method of Forming The Same

Semiconductor structure and manufacturing method thereof

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

Self-Aligned Contact Hard Mask Structure of Semiconductor Device an...

FIN FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMING THE SAME

FINFETS WITH EPITAXY REGIONS HAVING MIXED WAVY AND NON-WAVY PORTIONS

FINFET PITCH SCALING