with a particular manufacturing method of the source or drain structures

Industry

CPC
H01L21/823418

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/823418with a particular manufacturing method of the source or drain structures

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Cut EPI process and structures
- Patent number 12,211,749
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of fin-type field effect transistor structure
- Patent number 12,211,843
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 12,211,924
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET gate structure and related methods
- Patent number 12,205,848
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Ting Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a multi-gate device having a semiconductor...
- Patent number 12,199,170
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei Ju Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate electrode for applying tensile...
- Patent number 12,198,987
- Issue date Jan 14, 2025
- Renesas Electronics Corporation
- Hirokazu Sayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-finger transistor structure and method of manufacturing the same
- Patent number 12,191,367
- Issue date Jan 7, 2025
- United Microelectronics Corp.
- Su Xing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around transistor with reduced source/drain contact resist...
- Patent number 12,191,151
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jui-Ping Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain engineering process for multigate devices
- Patent number 12,191,369
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of high density 3D circuits with enhanced 3D conductivity
- Patent number 12,191,210
- Issue date Jan 7, 2025
- Tokyo Electron Limited
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device by driving hydrogen into a...
- Patent number 12,183,581
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hongfa Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of performing gap filling including filling trenches between...
- Patent number 12,183,590
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with gate isolation features and fabrication m...
- Patent number 12,183,799
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Chien Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the semicondu...
- Patent number 12,176,390
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,176,409
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure having an isolation layer to isolate...
- Patent number 12,176,391
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Lung-Kun Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire/nanosheet device with support portion, method of manufactu...
- Patent number 12,176,393
- Issue date Dec 24, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid semiconductor device
- Patent number 12,170,279
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Chien Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact features and methods of fabricating the same in Fin field-e...
- Patent number 12,170,245
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded metal lines
- Patent number 12,170,268
- Issue date Dec 17, 2024
- ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
- Stephen Morein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure
- Patent number 12,166,121
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,166,125
- Issue date Dec 10, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 12,165,923
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chuan-Hui Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with buried power rail, integrated circuit...
- Patent number 12,165,927
- Issue date Dec 10, 2024
- Mediatek Inc.
- Po-Chao Tsao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric fins with air gap and backside self-aligned contact
- Patent number 12,166,071
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ko-Cheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for gate-all-around devices
- Patent number 12,166,075
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and methods of formation
- Patent number 12,165,875
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsu Ming Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure in semiconductor device and method of forming the same
- Patent number 12,166,074
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming same
- Patent number 12,159,868
- Issue date Dec 3, 2024
- SEMICONDUCTOR MANUFACTURING NORTH CHINA (BEIJING) CORPORATION
- Cai Qiaoming
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device with junction FET tr...
- Patent number 12,159,806
- Issue date Dec 3, 2024
- SK keyfoundry Inc.
- Ji Man Kim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH TRANSISTOR LOCAL INTERCONNECTS
- Publication number 20250038111
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Mahbub Rashed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED METAL LINES
- Publication number 20250038152
- Publication date Jan 30, 2025
- ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
- Stephen Morein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Formation With Staggered Gate Patterning
- Publication number 20250040184
- Publication date Jan 30, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHARED SOURCE/DRAIN CONTACT FOR STACKED TRANSISTORS
- Publication number 20250040199
- Publication date Jan 30, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250040215
- Publication date Jan 30, 2025
- SAMSUNG ELECTRONICS CO,. LTD.
- Dong Hoon HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTOR WITH INDEPENDENTLY BIASABLE SUPPLE...
- Publication number 20250031439
- Publication date Jan 23, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS
- Publication number 20250031446
- Publication date Jan 23, 2025
- Intel Corporation
- Walid M. HAFEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BACKSIDE GATE CONTACT
- Publication number 20250029925
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250031417
- Publication date Jan 23, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked Multi-Gate Device With Reduced Contact Resistance And Metho...
- Publication number 20250031419
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Kan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE HARD MASK DESIGN FOR IMPROVED SOURCE/DRAIN FORMATION
- Publication number 20250022938
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yao-Hsuan Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION FOR BACKSIDE CONTACT FORMATION
- Publication number 20250022913
- Publication date Jan 16, 2025
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Contact with Low-K Contact Etch Stop Layer and Method...
- Publication number 20250022931
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., LTD
- Ting-Yeh CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH IMPROVED SOURCE/DRAIN PROFILE AND METHODS...
- Publication number 20250022914
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu KAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multigate Device Having Reduced Contact Resistivity
- Publication number 20250015154
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Co., LTD
- Georgios VELLIANITIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE STRUCTURE AND METHOD
- Publication number 20250016983
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Yu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Backside Via and Dual Side Power Rail For Epitaxial Source/Drain St...
- Publication number 20250006557
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20250006558
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lung Tung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TRANSISTOR STRUCTURE AND METHODS OF FORMATION
- Publication number 20250006731
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kau-Chu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR AND METHOD OF MANUFACTURING TRANSISTOR
- Publication number 20250006813
- Publication date Jan 2, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Yongliang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE ISOLATION OF CONTACT AND SOURCE/DRAIN STRUCTURES
- Publication number 20240429292
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USER MODEL-BASED DATA LOSS PREVENTION
- Publication number 20240430308
- Publication date Dec 26, 2024
- ARMORBLOX LLC
- Chetan Anand
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
BACKSIDE CONTACT MITIGATING CONTACT TO GATE SHORT
- Publication number 20240429103
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A BACKSIDE POWER DISTRIBUTION...
- Publication number 20240421154
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Jongjin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONVERGENT FIN AND NANOSTRUCTURE TRANSISTOR STRUCTURE AND METHOD
- Publication number 20240421185
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuan-Ting PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING MG CONTACTS COUPLED BY MP CONTACT AND METHOD OF MANUF...
- Publication number 20240421187
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING AIR GAP BETWEEN GATE DIELECTRIC LAYER AND SPACER
- Publication number 20240413199
- Publication date Dec 12, 2024
- UNITED MICROELECTRONICS CORP.
- Zhi-Cheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240413200
- Publication date Dec 12, 2024
- UNITED MICROELECTRONICS CORP.
- Zhi-Cheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240413202
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Heng TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOBLE FORMATION METHOD OF CMOS FOR 3D STACKED FET WITH BSPDN
- Publication number 20240413213
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Keumseok PARK
- H01 - BASIC ELECTRIC ELEMENTS

with a particular manufacturing method of the source or drain structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Cut EPI process and structures

Manufacturing method of fin-type field effect transistor structure

Semiconductor device and method of forming the same

FinFET gate structure and related methods

Method of manufacturing a multi-gate device having a semiconductor...

Semiconductor device including gate electrode for applying tensile...

Multi-finger transistor structure and method of manufacturing the same

Gate-all-around transistor with reduced source/drain contact resist...

Source and drain engineering process for multigate devices

Formation of high density 3D circuits with enhanced 3D conductivity

Method of forming a semiconductor device by driving hydrogen into a...

Method of performing gap filling including filling trenches between...

Semiconductor device with gate isolation features and fabrication m...

Semiconductor device structure and method for forming the semicondu...

Semiconductor devices and methods of manufacturing thereof

Semiconductor device structure having an isolation layer to isolate...

Nanowire/nanosheet device with support portion, method of manufactu...

Hybrid semiconductor device

Contact features and methods of fabricating the same in Fin field-e...

Embedded metal lines

Integrated circuit structure

Semiconductor structure and method for forming the same

Method of manufacturing a semiconductor device

Semiconductor structure with buried power rail, integrated circuit...

Dielectric fins with air gap and backside self-aligned contact

Method and structure for gate-all-around devices

Semiconductor device and methods of formation

Gate structure in semiconductor device and method of forming the same

Semiconductor structure and method for forming same

Method of manufacturing a semiconductor device with junction FET tr...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH TRANSISTOR LOCAL INTERCONNECTS

EMBEDDED METAL LINES

Contact Formation With Staggered Gate Patterning

SHARED SOURCE/DRAIN CONTACT FOR STACKED TRANSISTORS

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

FIN-TYPE FIELD EFFECT TRANSISTOR WITH INDEPENDENTLY BIASABLE SUPPLE...

HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS

SEMICONDUCTOR DEVICE HAVING BACKSIDE GATE CONTACT

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Stacked Multi-Gate Device With Reduced Contact Resistance And Metho...

GATE HARD MASK DESIGN FOR IMPROVED SOURCE/DRAIN FORMATION

TRENCH ISOLATION FOR BACKSIDE CONTACT FORMATION

Source/Drain Contact with Low-K Contact Etch Stop Layer and Method...

SEMICONDUCTOR DEVICE WITH IMPROVED SOURCE/DRAIN PROFILE AND METHODS...

Multigate Device Having Reduced Contact Resistivity

MEMORY DEVICE STRUCTURE AND METHOD

Backside Via and Dual Side Power Rail For Epitaxial Source/Drain St...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

HIGH VOLTAGE TRANSISTOR STRUCTURE AND METHODS OF FORMATION

TRANSISTOR AND METHOD OF MANUFACTURING TRANSISTOR

SEMICONDUCTOR DEVICE ISOLATION OF CONTACT AND SOURCE/DRAIN STRUCTURES

USER MODEL-BASED DATA LOSS PREVENTION

BACKSIDE CONTACT MITIGATING CONTACT TO GATE SHORT

INTEGRATED CIRCUIT DEVICES INCLUDING A BACKSIDE POWER DISTRIBUTION...

CONVERGENT FIN AND NANOSTRUCTURE TRANSISTOR STRUCTURE AND METHOD

DEVICE HAVING MG CONTACTS COUPLED BY MP CONTACT AND METHOD OF MANUF...

METHOD FOR FORMING AIR GAP BETWEEN GATE DIELECTRIC LAYER AND SPACER

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

NOBLE FORMATION METHOD OF CMOS FOR 3D STACKED FET WITH BSPDN