with a particular manufacturing method of the source or drain structures

Industry

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H01L21/823418

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/823418with a particular manufacturing method of the source or drain structures

Industries

Patents Grantslast 30 patents

Information Patent Grant
Contact conductive feature formation and structure
- Patent number 12,148,659
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ken-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with transistor local interconnects
- Patent number 12,148,702
- Issue date Nov 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Mahbub Rashed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano-sheet-based devices having inner spacer structures or gate por...
- Patent number 12,148,812
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jui-Chien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with S/D bottom isolation and methods of formi...
- Patent number 12,148,669
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,148,671
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming source/drain contacts
- Patent number 12,142,663
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,142,683
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,142,650
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Sang Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a gate-all-around field effect trans...
- Patent number 12,142,529
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Ming Yu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device having contact trenches extending from opposit...
- Patent number 12,136,670
- Issue date Nov 5, 2024
- Infineon Technologies AG
- Markus Zundel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with self-aligned wavy contact profile and met...
- Patent number 12,136,673
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ta Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage three-dimensional devices having dielectric liners
- Patent number 12,136,628
- Issue date Nov 5, 2024
- Intel Corporation
- Walid M. Hafez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside vias in semiconductor device
- Patent number 12,132,092
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with metal gate stack
- Patent number 12,132,096
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with dielectric stressor
- Patent number 12,132,115
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shi-Ning Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain contact with low-k contact etch stop layer and method...
- Patent number 12,125,889
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ting-Yeh Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructure field-effect transistor device with dielectric layer...
- Patent number 12,125,877
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Guan-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor with wrap-around contact structure
- Patent number 12,119,346
- Issue date Oct 15, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Array of vertical transistors having channel regions connected by a...
- Patent number 12,119,269
- Issue date Oct 15, 2024
- Micron Technology, Inc.
- Deepak Chandra Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based field effect transistor (finFET) device with enhanced on-...
- Patent number 12,113,065
- Issue date Oct 8, 2024
- Avago Technologies Internationa! Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid isolation regions having upper and lower portions with seams
- Patent number 12,112,988
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Ting Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin end spacer plug and method of manufac...
- Patent number 12,112,987
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Chung Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode having a work-function layer including materials wit...
- Patent number 12,113,120
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method
- Patent number 12,112,986
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 12,107,011
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with gate isolation structure and method for f...
- Patent number 12,107,087
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Chien Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming air gap between gate dielectric layer and spacer
- Patent number 12,107,121
- Issue date Oct 1, 2024
- United Microelectronics Corp.
- Zhi-Cheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned air spacers and methods for forming
- Patent number 12,107,146
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NMOS and PMOS transistor gates with hafnium oxide layers and lantha...
- Patent number 12,107,015
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around devices having self-aligned capping between channel...
- Patent number 12,107,131
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD
- Publication number 20240387701
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsai-Jung Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240387028
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching Chu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240387275
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK
- Publication number 20240387691
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20240387625
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240387735
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS THEREOF
- Publication number 20240387737
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN REGIONS OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING...
- Publication number 20240387629
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE HAVING AN ISOLATION LAYER TO ISOLATE...
- Publication number 20240387627
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Lung-Kun CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE FOR SOURCE/DRAIN CONTACT
- Publication number 20240387675
- Publication date Nov 21, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURNING COMPANY, LTD.
- Tsungyu HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE REDUCTION FOR MULTI-GATE DEVICES
- Publication number 20240387703
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH DIELECTRIC STRESSOR
- Publication number 20240387740
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shi-Ning JU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A FINFET STRUCTURE AND METHOD FOR FA...
- Publication number 20240387273
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE TRAP CHARGE DENSITY REDUCTION
- Publication number 20240387274
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Szu-Chi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240387282
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Te-Chih HSIUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DIELECTRIC FINS AND METHOD FOR FORMING T...
- Publication number 20240387550
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuan-Ting Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanostructure Field-Effect Transistor Device and Method of Forming
- Publication number 20240379750
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Guan-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND DEVICES HAVING SELF-ALIGNED CAPPING BETWEEN CHANNEL...
- Publication number 20240379782
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHOD OF FABRICATING MULTIGATE DEVICES HAVING DIFFERENT...
- Publication number 20240379802
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SOURCE/DRAIN CONTACTS
- Publication number 20240379814
- Publication date Nov 14, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC FINS WITH AIR GAP AND BACKSIDE SELF-ALIGNED CONTACT
- Publication number 20240379744
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Ko-Cheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Dopant Source/Drain Regions and Methods of Forming Same
- Publication number 20240379446
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHECKERBOARD DUMMY DESIGN FOR EPITAXIAL OPEN RATIO
- Publication number 20240379664
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chang Jong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Source/Drain Structures for Multigate Devices and Methods...
- Publication number 20240379669
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379683
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE
- Publication number 20240379443
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Yun CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN REGIONS VERT...
- Publication number 20240379780
- Publication date Nov 14, 2024
- Samsung Electronics Co., Ltd.
- Keumseok PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH MERGED EPITAXY BACKSIDE CUT AND METHOD
- Publication number 20240379803
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei Ju LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID SEMICONDUCTOR DEVICE
- Publication number 20240379668
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Chien Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS THEREOF
- Publication number 20240379753
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS

with a particular manufacturing method of the source or drain structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Contact conductive feature formation and structure

Semiconductor device with transistor local interconnects

Nano-sheet-based devices having inner spacer structures or gate por...

Semiconductor device with S/D bottom isolation and methods of formi...

Semiconductor devices and methods of manufacturing thereof

Method for forming source/drain contacts

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor device

Semiconductor device including a gate-all-around field effect trans...

Semiconductor device having contact trenches extending from opposit...

Semiconductor device with self-aligned wavy contact profile and met...

High voltage three-dimensional devices having dielectric liners

Backside vias in semiconductor device

Semiconductor device structure with metal gate stack

Semiconductor device structure with dielectric stressor

Source/drain contact with low-k contact etch stop layer and method...

Nanostructure field-effect transistor device with dielectric layer...

Vertical field-effect transistor with wrap-around contact structure

Array of vertical transistors having channel regions connected by a...

Fin-based field effect transistor (finFET) device with enhanced on-...

Hybrid isolation regions having upper and lower portions with seams

Semiconductor device with fin end spacer plug and method of manufac...

Gate electrode having a work-function layer including materials wit...

FinFET device and method

Method for fabricating a semiconductor device

Semiconductor device with gate isolation structure and method for f...

Method for forming air gap between gate dielectric layer and spacer

Self-aligned air spacers and methods for forming

NMOS and PMOS transistor gates with hafnium oxide layers and lantha...

Gate-all-around devices having self-aligned capping between channel...

Patents Applicationslast 30 patents

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS THEREOF

SOURCE/DRAIN REGIONS OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING...

SEMICONDUCTOR DEVICE STRUCTURE HAVING AN ISOLATION LAYER TO ISOLATE...

EPITAXIAL STRUCTURE FOR SOURCE/DRAIN CONTACT

LEAKAGE REDUCTION FOR MULTI-GATE DEVICES

SEMICONDUCTOR DEVICE STRUCTURE WITH DIELECTRIC STRESSOR

SEMICONDUCTOR DEVICE INCLUDING A FINFET STRUCTURE AND METHOD FOR FA...

INTERFACE TRAP CHARGE DENSITY REDUCTION

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES WITH DIELECTRIC FINS AND METHOD FOR FORMING T...

Nanostructure Field-Effect Transistor Device and Method of Forming

GATE-ALL-AROUND DEVICES HAVING SELF-ALIGNED CAPPING BETWEEN CHANNEL...

DEVICE AND METHOD OF FABRICATING MULTIGATE DEVICES HAVING DIFFERENT...

METHOD FOR FORMING SOURCE/DRAIN CONTACTS

DIELECTRIC FINS WITH AIR GAP AND BACKSIDE SELF-ALIGNED CONTACT

Dual Dopant Source/Drain Regions and Methods of Forming Same

CHECKERBOARD DUMMY DESIGN FOR EPITAXIAL OPEN RATIO

Epitaxial Source/Drain Structures for Multigate Devices and Methods...

SEMICONDUCTOR DEVICES

METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN REGIONS VERT...

FIELD EFFECT TRANSISTOR WITH MERGED EPITAXY BACKSIDE CUT AND METHOD

HYBRID SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS THEREOF