with a PN junction gate

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CPC
H01L29/66893

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66893with a PN junction gate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
High purity SiOC and SiC, methods compositions and applications
- Patent number 12,291,456
- Issue date May 6, 2025
- Pallidus, Inc.
- Douglas M. Dukes
- C30 - CRYSTAL GROWTH
Information Patent Grant
Germanium-based sensor with junction-gate field effect transistor a...
- Patent number 12,148,853
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superconducting materials, devices, and processes
- Patent number 12,113,123
- Issue date Oct 8, 2024
- The Board of Trustees of Western Michigan University
- Robert A. Makin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,967,634
- Issue date Apr 23, 2024
- Denso Corporation
- Kensuke Nagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-based sensor with junction-gate field effect transistor a...
- Patent number 11,855,237
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power silicon carbide based semiconductor devices with improved sho...
- Patent number 11,843,061
- Issue date Dec 12, 2023
- Wolfspeed, Inc.
- Kijeong Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a lateral super junction field effe...
- Patent number 11,837,658
- Issue date Dec 5, 2023
- K.Eklund Innovation
- Klas-Håkan Eklund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing an integrated circuit comprising a junctio...
- Patent number 11,830,776
- Issue date Nov 28, 2023
- STMicroelectronics (Crolles 2) SAS
- Jean Jimenez Martinez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-plate trench FET and associated method for manufacturing
- Patent number 11,688,774
- Issue date Jun 27, 2023
- Monolithic Power Systems, Inc.
- Ignacio Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field effect transistor on silicon-on-insulator substrate
- Patent number 11,557,662
- Issue date Jan 17, 2023
- Texas Instruments Incorporated
- Zachary Ka Fai Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Band gap engineered materials
- Patent number 11,545,563
- Issue date Jan 3, 2023
- The Board of Trustees of Western Michigan University
- Robert A. Makin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-plate trench FET and associated method for manufacturing
- Patent number 11,527,626
- Issue date Dec 13, 2022
- Monolithic Power Systems, Inc.
- Ignacio Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High purity SiOC and SiC, methods compositions and applications
- Patent number 11,365,124
- Issue date Jun 21, 2022
- Pallidus, Inc.
- Mark S. Land
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit comprising a junction field effect transistor
- Patent number 11,342,449
- Issue date May 24, 2022
- STMicroelectronics (Crolles 2) SAS
- Jean Jimenez Martinez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices comprising getter layers and methods of makin...
- Patent number 11,315,845
- Issue date Apr 26, 2022
- Monolith Semiconductor, Inc.
- Kevin Matocha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for unipolar charge balanced semiconductor powe...
- Patent number 11,233,157
- Issue date Jan 25, 2022
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with field plate over tapered trench isolation
- Patent number 11,121,224
- Issue date Sep 14, 2021
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field effect transistor (JFET) structure and methods to fo...
- Patent number 11,094,834
- Issue date Aug 17, 2021
- GLOBALFOUNDRIES U.S. INC.
- Qizhi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded JFETs for high voltage applications
- Patent number 11,069,805
- Issue date Jul 20, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jen-Hao Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device, and power conversion...
- Patent number 10,892,329
- Issue date Jan 12, 2021
- Mitsubishi Electric Corporation
- Shigenori Kido
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate JFET with field plate
- Patent number 10,886,418
- Issue date Jan 5, 2021
- Texas Instruments Incorporated
- Sheldon Douglas Haynie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices comprising getter layers and methods of makin...
- Patent number 10,804,175
- Issue date Oct 13, 2020
- Monolith Semiconductor, Inc.
- Kevin Matocha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano-tube MOSFET technology and devices
- Patent number 10,686,035
- Issue date Jun 16, 2020
- Alpha and Omega Semiconductor Incorporated
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High purity polymer derived 3C SiC, methods compositions and applic...
- Patent number 10,597,794
- Issue date Mar 24, 2020
- Pallidus, Inc.
- Mark S. Land
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 10,559,701
- Issue date Feb 11, 2020
- Hyundai Motor Company
- Dae Hwan Chun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded JFETs for high voltage applications
- Patent number 10,510,882
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jen-Hao Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 10,510,844
- Issue date Dec 17, 2019
- Mitsubishi Electric Corporation
- Munetaka Noguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect semiconductor device having a heterojunction contact
- Patent number 10,461,074
- Issue date Oct 29, 2019
- Infineon Technologies Austria AG
- Wolfgang Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage MOSFET devices and methods of making the devices
- Patent number 10,361,302
- Issue date Jul 23, 2019
- MONOLITH SEMICONDUCTOR INC.
- Sujit Banerjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral gallium nitride JFET with controlled doping profile
- Patent number 10,312,378
- Issue date Jun 4, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LATERALLY SILICON CARBIDE JUNCTION GATE FIELD EFFECT TRANSISTOR DEV...
- Publication number 20250063760
- Publication date Feb 20, 2025
- SUZHOU WATECH ELECTRONICS CO., LTD.
- Changchang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Planar JFET Device with Reduced Gate Resistance
- Publication number 20250040166
- Publication date Jan 30, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Alexander Viktorovich BOLOTNIKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERCONDUCTING MATERIALS, DEVICES, AND PROCESSES
- Publication number 20250006819
- Publication date Jan 2, 2025
- Board of Trustees of Western Michigan University
- Robert A. Makin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED BODY TRANSISTORS
- Publication number 20240421233
- Publication date Dec 19, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ming Tsang TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...
- Publication number 20240387766
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240379844
- Publication date Nov 14, 2024
- HON HAI PRECISION INDUSTRY CO., LTD.
- Chia-Lung HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240379843
- Publication date Nov 14, 2024
- HON HAI PRECISION INDUSTRY CO., LTD.
- Yi-Kai HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20240282823
- Publication date Aug 22, 2024
- HYUNDAI MOBIS CO., LTD.
- Ju Hwan LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR IN A SILICON CARBIDE LAYER AND A TRANSISTOR IN A GALLIUM...
- Publication number 20240222469
- Publication date Jul 4, 2024
- Intel Corporation
- Abhishek Anil SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH INTEGRATED SOURCE-DRAIN DIODE
- Publication number 20240222504
- Publication date Jul 4, 2024
- Qorvo US, Inc.
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING MOSFET REGION AND DIODE REGION AND M...
- Publication number 20240128260
- Publication date Apr 18, 2024
- DB HiTek Co., Ltd.
- Seung Hyun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURES OF SEMICONDUCTOR DEVICES
- Publication number 20240120373
- Publication date Apr 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- HONG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...
- Publication number 20240105877
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CHANNEL METAL OXIDE SEMICONDUCTOR (MOS) DEVICE AND FAB...
- Publication number 20240096963
- Publication date Mar 21, 2024
- Huawei Technologies Co., Ltd
- Tomasz Sledziewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TRENCH STRUCTURES AND METHOD FOR MANUFACT...
- Publication number 20240072160
- Publication date Feb 29, 2024
- Monolithic Power Systems, Inc.
- Haifeng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR (SOI) DEVICE HAVING VARIABLE THICKNESS DEVICE...
- Publication number 20240072159
- Publication date Feb 29, 2024
- Manoj Chandrika Reghunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A LATERAL SUPER JUNCTION FIELD EFFE...
- Publication number 20230411518
- Publication date Dec 21, 2023
- K.EKLUND INNOVATION
- Klas-Håkan EKLUND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE, INVERTER CIRCUIT USING THE SA...
- Publication number 20230378292
- Publication date Nov 23, 2023
- DENSO CORPORATION
- JUNICHI UEHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230352599
- Publication date Nov 2, 2023
- Mitsubishi Electric Corporation
- Hisashi SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIODE AND MANUFACTURING METHOD
- Publication number 20230326974
- Publication date Oct 12, 2023
- INFINEON TECHNOLOGIES AG
- Thomas Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR HAVING SAME GATE AND SOURCE DOPING, CELL ST...
- Publication number 20230178636
- Publication date Jun 8, 2023
- PN Junction Semiconductor (Hangzhou) Co., Ltd.
- Xing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230138658
- Publication date May 4, 2023
- DENSO CORPORATION
- Emika ABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERCONDUCTING MATERIALS, DEVICES, AND PROCESSES
- Publication number 20230121423
- Publication date Apr 20, 2023
- The Board of Trustees of Western Michigan University
- Robert A. Makin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Purity SiOC and SiC, Methods Compositions and Applications
- Publication number 20230090632
- Publication date Mar 23, 2023
- Pallidus, Inc.
- Douglas M. Dukes
- C01 - INORGANIC CHEMISTRY
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20230047842
- Publication date Feb 16, 2023
- Panasonic Holdings Corporation
- Masahiro OGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220384621
- Publication date Dec 1, 2022
- DENSO CORPORATION
- Kensuke NAGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT COMPRISING A JUNCTION FIELD EFFECT TRANSISTOR (J...
- Publication number 20220254905
- Publication date Aug 11, 2022
- STMicroelectronics (Crolles 2) SAS
- Jean JIMENEZ MARTINEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220238703
- Publication date Jul 28, 2022
- DENSO CORPORATION
- Hirofumi KIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-PLATE TRENCH FET AND ASSOCIATED METHOD FOR MANUFACTURING
- Publication number 20220140092
- Publication date May 5, 2022
- Monolithic Power Systems, Inc.
- Ignacio Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-PLATE TRENCH FET AND ASSOCIATED METHOD FOR MANUFACTURING
- Publication number 20220140093
- Publication date May 5, 2022
- Monolithic Power Systems, Inc.
- Ignacio Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS

with a PN junction gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

High purity SiOC and SiC, methods compositions and applications

Germanium-based sensor with junction-gate field effect transistor a...

Superconducting materials, devices, and processes

Semiconductor device and method of manufacturing the same

Germanium-based sensor with junction-gate field effect transistor a...

Power silicon carbide based semiconductor devices with improved sho...

Semiconductor device comprising a lateral super junction field effe...

Method for manufacturing an integrated circuit comprising a junctio...

Field-plate trench FET and associated method for manufacturing

Junction field effect transistor on silicon-on-insulator substrate

Band gap engineered materials

Field-plate trench FET and associated method for manufacturing

High purity SiOC and SiC, methods compositions and applications

Integrated circuit comprising a junction field effect transistor

Semiconductor devices comprising getter layers and methods of makin...

Systems and methods for unipolar charge balanced semiconductor powe...

Transistor with field plate over tapered trench isolation

Junction field effect transistor (JFET) structure and methods to fo...

Embedded JFETs for high voltage applications

Method for manufacturing semiconductor device, and power conversion...

Split-gate JFET with field plate

Semiconductor devices comprising getter layers and methods of makin...

Nano-tube MOSFET technology and devices

High purity polymer derived 3C SiC, methods compositions and applic...

Semiconductor device and method of manufacturing the same

Embedded JFETs for high voltage applications

Semiconductor device and method of manufacturing same

Field-effect semiconductor device having a heterojunction contact

High voltage MOSFET devices and methods of making the devices

Lateral gallium nitride JFET with controlled doping profile

Patents Applicationslast 30 patents

LATERALLY SILICON CARBIDE JUNCTION GATE FIELD EFFECT TRANSISTOR DEV...

Planar JFET Device with Reduced Gate Resistance

SUPERCONDUCTING MATERIALS, DEVICES, AND PROCESSES

GATED BODY TRANSISTORS

Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

POWER SEMICONDUCTOR DEVICE

TRANSISTOR IN A SILICON CARBIDE LAYER AND A TRANSISTOR IN A GALLIUM...

TRANSISTOR WITH INTEGRATED SOURCE-DRAIN DIODE

SEMICONDUCTOR DEVICE INCLUDING MOSFET REGION AND DIODE REGION AND M...

ISOLATION STRUCTURES OF SEMICONDUCTOR DEVICES

Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...

SELF-ALIGNED CHANNEL METAL OXIDE SEMICONDUCTOR (MOS) DEVICE AND FAB...

SEMICONDUCTOR DEVICE WITH TRENCH STRUCTURES AND METHOD FOR MANUFACT...

SILICON-ON-INSULATOR (SOI) DEVICE HAVING VARIABLE THICKNESS DEVICE...

SEMICONDUCTOR DEVICE COMPRISING A LATERAL SUPER JUNCTION FIELD EFFE...

SILICON CARBIDE SEMICONDUCTOR DEVICE, INVERTER CIRCUIT USING THE SA...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DIODE AND MANUFACTURING METHOD

FIELD EFFECT TRANSISTOR HAVING SAME GATE AND SOURCE DOPING, CELL ST...

SEMICONDUCTOR DEVICE

SUPERCONDUCTING MATERIALS, DEVICES, AND PROCESSES

High Purity SiOC and SiC, Methods Compositions and Applications

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

INTEGRATED CIRCUIT COMPRISING A JUNCTION FIELD EFFECT TRANSISTOR (J...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

FIELD-PLATE TRENCH FET AND ASSOCIATED METHOD FOR MANUFACTURING

FIELD-PLATE TRENCH FET AND ASSOCIATED METHOD FOR MANUFACTURING