with a recess formed by etching in the source/emitter contact region

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CPC
H01L29/6634

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/6634with a recess formed by etching in the source/emitter contact region

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Metal layer protection during wet etching
- Patent number 12,300,740
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a transistor with trenches and mesas
- Patent number 12,283,621
- Issue date Apr 22, 2025
- Infineon Technologies Austria AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse recovery charge reduction in semiconductor devices
- Patent number 12,278,266
- Issue date Apr 15, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Shengling Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 12,249,510
- Issue date Mar 11, 2025
- Fuji Electric Co., Ltd.
- Kazuki Kamimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mesa contact for MOS controlled power semiconductor device and meth...
- Patent number 12,237,381
- Issue date Feb 25, 2025
- Infineon Technologies AG
- Alim Karmous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 12,230,501
- Issue date Feb 18, 2025
- Fuji Electric Co., Ltd.
- Naoko Kodama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including insulated gate bipolar transistor
- Patent number 12,224,316
- Issue date Feb 11, 2025
- Infineon Technologies Austria AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method
- Patent number 12,218,228
- Issue date Feb 4, 2025
- Fuji Electric Co., Ltd.
- Koh Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, and method of manufacturing semiconductor device
- Patent number 12,205,993
- Issue date Jan 21, 2025
- Fuji Electric Co., Ltd.
- Hiroki Wakimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 12,206,016
- Issue date Jan 21, 2025
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,206,015
- Issue date Jan 21, 2025
- Fuji Electric Co., Ltd.
- Tohru Shirakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability and low gate...
- Patent number 12,199,146
- Issue date Jan 14, 2025
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and manufacturiing method
- Patent number 12,199,144
- Issue date Jan 14, 2025
- HITACHI ENERGY LTD
- Wolfgang Amadeus Vitale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus
- Patent number 12,199,092
- Issue date Jan 14, 2025
- Mitsubishi Electric Corporation
- Tetsuo Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method of semiconductor device...
- Patent number 12,199,162
- Issue date Jan 14, 2025
- Fuji Electric Co., Ltd.
- Yuichi Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,191,148
- Issue date Jan 7, 2025
- Fuji Electric Co., Ltd.
- Yasunori Agata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Notch shape of trench gate bottom corner for better breakdown volta...
- Patent number 12,183,795
- Issue date Dec 31, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Conghui Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,166,069
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zheng-Long Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conducting IGBT with controlled anode injection
- Patent number 12,166,111
- Issue date Dec 10, 2024
- DYNEX SEMICONDUCTOR LIMITED
- Luther-King Ekonde Ngwendson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power device and method of making the same
- Patent number 12,154,943
- Issue date Nov 26, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method
- Patent number 12,148,817
- Issue date Nov 19, 2024
- Fuji Electric Co., Ltd.
- Motoyoshi Kubouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Automatic reverse blocking bidirectional switch
- Patent number 12,142,661
- Issue date Nov 12, 2024
- Infineon Technologies Austria AG
- Jonas Emanuel Huber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having a field plate
- Patent number 12,094,969
- Issue date Sep 17, 2024
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of controlling same
- Patent number 12,080,784
- Issue date Sep 3, 2024
- Kabushiki Kaisha Toshiba
- Tomoko Matsudai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate semiconductor device and method of manufacturing the...
- Patent number 12,074,200
- Issue date Aug 27, 2024
- Fuji Electric Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,068,310
- Issue date Aug 20, 2024
- Mitsubishi Electric Corporation
- Munenori Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 12,062,654
- Issue date Aug 13, 2024
- Mitsubishi Electric Corporation
- Takuya Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 12,062,655
- Issue date Aug 13, 2024
- Rohm Co., Ltd.
- Jun Takaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including emitter regions and method of manufa...
- Patent number 12,034,065
- Issue date Jul 9, 2024
- Rohm Co., Ltd.
- Akihiro Hikasa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having a barrier region
- Patent number 12,034,066
- Issue date Jul 9, 2024
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MONOLITHICALLY INTEGRATED BIDIRECTIONAL SWITCH
- Publication number 20250072022
- Publication date Feb 27, 2025
- Infineon Technologies Austria AG
- Jonas Emanuel Huber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES HAVING GATE TRENCHES WITH ASYMMETRICALL...
- Publication number 20250072044
- Publication date Feb 27, 2025
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wide Bandgap Trench Gate Semiconductor Device with Buried Gate
- Publication number 20250063800
- Publication date Feb 20, 2025
- Wolfspeed, Inc.
- Thomas Edgar Harrington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250048684
- Publication date Feb 6, 2025
- Fuji Electric Co., Ltd.
- Shuntaro YAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250040162
- Publication date Jan 30, 2025
- RENESAS ELECTRONICS CORPORATION
- Hitoshi MATSUURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250022710
- Publication date Jan 16, 2025
- Fuji Electric Co., Ltd.
- Soichi YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20240405109
- Publication date Dec 5, 2024
- ROHM CO., LTD.
- Suguru HONDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240405108
- Publication date Dec 5, 2024
- Mitsubishi Electric Corporation
- Kenji HARADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240405110
- Publication date Dec 5, 2024
- ROHM CO., LTD.
- Takayuki OSAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE POWER DEVICE WITH EPITAXIALLY GROWN SUBSTRATE LAYERS
- Publication number 20240405107
- Publication date Dec 5, 2024
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240395806
- Publication date Nov 28, 2024
- Mitsubishi Electric Corporation
- Kakeru OTSUKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240395914
- Publication date Nov 28, 2024
- Fuji Electric Co., Ltd.
- Koh Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF,...
- Publication number 20240395916
- Publication date Nov 28, 2024
- EDGELESS SEMICONDUCTOR CO., LTD. OF ZHUHAI
- Chunyan LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF,...
- Publication number 20240395917
- Publication date Nov 28, 2024
- EDGELESS SEMICONDUCTOR CO., LTD. OF ZHUHAI
- Chunyan LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING SAME
- Publication number 20240387715
- Publication date Nov 21, 2024
- Kabushiki Kaisha Toshiba
- Tomoko Matsudai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND MANUFACTURIING METHOD
- Publication number 20240379756
- Publication date Nov 14, 2024
- Hitachi Energy Ltd
- Wolfgang Amadeus VITALE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE USING SAME, AND MANUF...
- Publication number 20240379830
- Publication date Nov 14, 2024
- HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
- Tomoyuki MIYOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240379831
- Publication date Nov 14, 2024
- Mitsubishi Electric Corporation
- Kosuke SAKAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240355814
- Publication date Oct 24, 2024
- Mitsubishi Electric Corporation
- Munenori IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240339330
- Publication date Oct 10, 2024
- Fuji Electric Co., Ltd.
- Motoyoshi KUBOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240339500
- Publication date Oct 10, 2024
- Mitsubishi Electric Corporation
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240332288
- Publication date Oct 3, 2024
- Mitsubishi Electric Corporation
- Takuya YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED ELECTRONIC DEVICE WITH AN IMPROVED CONDUCTIVE CONTACT ST...
- Publication number 20240332376
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Davide FAGIANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240322022
- Publication date Sep 26, 2024
- Mitsubishi Electric Corporation
- Yuji EBIIKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE CONTROL METHOD, AND SEMI...
- Publication number 20240313094
- Publication date Sep 19, 2024
- Mitsubishi Electric Corporation
- Ayanori GATTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING SAME
- Publication number 20240304708
- Publication date Sep 12, 2024
- DB HiTek Co., Ltd.
- Ji Sun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240290782
- Publication date Aug 29, 2024
- Mitsubishi Electric Corporation
- Takuya YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR WITH SUPER JUNCTION STRUCTURE, AN...
- Publication number 20240290827
- Publication date Aug 29, 2024
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Pengcheng ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240290663
- Publication date Aug 29, 2024
- Fuji Electric Co., Ltd.
- Tatsuya HASHIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20240282818
- Publication date Aug 22, 2024
- Fuji Electric Co., Ltd.
- Naoki MITAMURA
- H01 - BASIC ELECTRIC ELEMENTS

with a recess formed by etching in the source/emitter contact region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Metal layer protection during wet etching

Semiconductor device having a transistor with trenches and mesas

Reverse recovery charge reduction in semiconductor devices

Semiconductor device and method of manufacturing semiconductor device

Mesa contact for MOS controlled power semiconductor device and meth...

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device including insulated gate bipolar transistor

Semiconductor device and manufacturing method

Semiconductor device, and method of manufacturing semiconductor device

Semiconductor device and manufacturing method of semiconductor device

Semiconductor device

Power semiconductor device with dV/dt controllability and low gate...

Power semiconductor device and manufacturiing method

Semiconductor apparatus

Semiconductor device and fabrication method of semiconductor device...

Semiconductor device and manufacturing method thereof

Notch shape of trench gate bottom corner for better breakdown volta...

Semiconductor device and manufacturing method thereof

Reverse conducting IGBT with controlled anode injection

Super junction power device and method of making the same

Semiconductor device and manufacturing method

Automatic reverse blocking bidirectional switch

Transistor device having a field plate

Semiconductor device and method of controlling same

Insulated-gate semiconductor device and method of manufacturing the...

Semiconductor device

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device and method for manufacturing same

Semiconductor device including emitter regions and method of manufa...

Power semiconductor device having a barrier region

Patents Applicationslast 30 patents

MONOLITHICALLY INTEGRATED BIDIRECTIONAL SWITCH

POWER SEMICONDUCTOR DEVICES HAVING GATE TRENCHES WITH ASYMMETRICALL...

Wide Bandgap Trench Gate Semiconductor Device with Buried Gate

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

INSULATED GATE POWER DEVICE WITH EPITAXIALLY GROWN SUBSTRATE LAYERS

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF,...

INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF,...

SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING SAME

POWER SEMICONDUCTOR DEVICE AND MANUFACTURIING METHOD

SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE USING SAME, AND MANUF...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

INTEGRATED ELECTRONIC DEVICE WITH AN IMPROVED CONDUCTIVE CONTACT ST...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE CONTROL METHOD, AND SEMI...

INSULATED GATE BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

INSULATED GATE BIPOLAR TRANSISTOR WITH SUPER JUNCTION STRUCTURE, AN...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE