with a recess formed by etching in the source/emitter contact region

Industry

CPC
H01L29/6634

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/6634with a recess formed by etching in the source/emitter contact region

Industries

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device and manufacturing method thereof
- Patent number 11,967,631
- Issue date Apr 23, 2024
- JSAB TECHNOLOGIES (SHENZHEN) LTD.
- Hao Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,961,883
- Issue date Apr 16, 2024
- Rohm Co. Ltd.
- Jun Takaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and devices related to radio frequency devices
- Patent number 11,948,802
- Issue date Apr 2, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Hans Taddiken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with p-contact and doped insulation bloc...
- Patent number 11,949,006
- Issue date Apr 2, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, preparation method therefor and electrical eq...
- Patent number 11,935,845
- Issue date Mar 19, 2024
- Guangdong Midea White Home Appliance Technology Innovation Center Co., Ltd.
- Hao Lan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,929,365
- Issue date Mar 12, 2024
- Rohm Co., Ltd.
- Shinya Umeki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 11,923,444
- Issue date Mar 5, 2024
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with insulated gate bipolar transistor region...
- Patent number 11,908,954
- Issue date Feb 20, 2024
- Mitsubishi Electric Corporation
- Takahiro Nakatani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method
- Patent number 11,901,443
- Issue date Feb 13, 2024
- Fuji Electric Co., Ltd.
- Motoyoshi Kubouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having elevated source regions and reces...
- Patent number 11,888,061
- Issue date Jan 30, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Erich Griebl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 11,881,504
- Issue date Jan 23, 2024
- Mitsubishi Electric Corporation
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device with silicon carbide body
- Patent number 11,881,512
- Issue date Jan 23, 2024
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,876,127
- Issue date Jan 16, 2024
- Renesas Electronics Corporation
- Tomohiro Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including IGBT, boundary, and diode regions
- Patent number 11,875,990
- Issue date Jan 16, 2024
- Mitsubishi Electric Corporation
- Tetsuya Nitta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,869,961
- Issue date Jan 9, 2024
- Fuji Electric Co., Ltd.
- Hiroshi Miyata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and preparation method thereof
- Patent number 11,862,676
- Issue date Jan 2, 2024
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Dong Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT chip having folded composite gate structure
- Patent number 11,848,375
- Issue date Dec 19, 2023
- ZHUZHOU CRRC TIMES ELECTRIC CO., LTD.
- Guoyou Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structure of a power semiconductor device
- Patent number 11,848,354
- Issue date Dec 19, 2023
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having overvoltage protection and method...
- Patent number 11,843,045
- Issue date Dec 12, 2023
- Infineon Technologies Austria AG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,830,872
- Issue date Nov 28, 2023
- Mitsubishi Electric Corporation
- Kazuki Kudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,830,939
- Issue date Nov 28, 2023
- Renesas Electronics Corporation
- Tomohiro Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,823,898
- Issue date Nov 21, 2023
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having a field plate in an elongate active trench
- Patent number 11,824,114
- Issue date Nov 21, 2023
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back side dopant activation in field stop IGBT
- Patent number 11,824,090
- Issue date Nov 21, 2023
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing an electronic device
- Patent number 11,817,484
- Issue date Nov 14, 2023
- STMicroelectronics (Crolles 2) SAS
- Franck Julien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for producing same
- Patent number 11,804,524
- Issue date Oct 31, 2023
- mqSemi AG
- Munaf Rahimo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate semiconductor device and method of manufacturing the...
- Patent number 11,798,993
- Issue date Oct 24, 2023
- Fuji Electric Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and preparation method therefor
- Patent number 11,799,024
- Issue date Oct 24, 2023
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Dong Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a buffer layer including a complex...
- Patent number 11,799,022
- Issue date Oct 24, 2023
- Mitsubishi Electric Corporation
- Kakeru Otsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse recovery charge reduction in semiconductor devices
- Patent number 11,776,997
- Issue date Oct 3, 2023
- Semiconductor Components Industries, LLC
- Shengling Deng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS AND DEVICES RELATED TO RADIO FREQUENCY DEVICES
- Publication number 20240145253
- Publication date May 2, 2024
- Infineon Technologies Dresden GmbH & Co., KG
- Hans Taddiken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20240128349
- Publication date Apr 18, 2024
- Fuji Electric Co., Ltd.
- Atsushi ONOGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20240128361
- Publication date Apr 18, 2024
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240128350
- Publication date Apr 18, 2024
- Fuji Electric Co., Ltd.
- Seiji NOGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20240128359
- Publication date Apr 18, 2024
- Fuji Electric Co., Ltd.
- Motoyoshi KUBOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE TYPE IGBT
- Publication number 20240120390
- Publication date Apr 11, 2024
- WILL SEMICONDUCTOR (SHANGHAI) CO. LTD.
- TETSUYA OKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240120406
- Publication date Apr 11, 2024
- RENESAS ELECTRONICS CORPORATION
- Tadashi YAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240113189
- Publication date Apr 4, 2024
- Mitsubishi Electric Corporation
- Koichi NISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240113208
- Publication date Apr 4, 2024
- Mitsubishi Electric Corporation
- Kohei SAKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240105784
- Publication date Mar 28, 2024
- Infineon Technologies Austria AG
- Thomas Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240105820
- Publication date Mar 28, 2024
- Kabushiki Kaisha Toshiba
- Takako MOTAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240097015
- Publication date Mar 21, 2024
- Fuji Electric Co., Ltd.
- Ryouichi KAWANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240088274
- Publication date Mar 14, 2024
- Mitsubishi Electric Corporation
- Ayanori GATTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240088275
- Publication date Mar 14, 2024
- RENESAS ELECTRONICS CORPORATION
- Masafumi HIROSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR...
- Publication number 20240088276
- Publication date Mar 14, 2024
- Fuji Electric Co., Ltd.
- Kenichi IGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESS GATE TRANSISTOR AND METHOD
- Publication number 20240079474
- Publication date Mar 7, 2024
- Micron Technology, Inc.
- Kyuseok Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240072132
- Publication date Feb 29, 2024
- FUJI ELECTRIC CO., LTD.
- Keisuke KOBAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240072152
- Publication date Feb 29, 2024
- Fuji Electric Co., Ltd.
- Naoki KUNESHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20240072110
- Publication date Feb 29, 2024
- Fuji Electric Co., Ltd.
- Nao SUGANUMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240072043
- Publication date Feb 29, 2024
- Mitsubishi Electric Corporation
- Hidenori FUJII
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...
- Publication number 20240072124
- Publication date Feb 29, 2024
- Mitsubishi Electric Corporation
- Yusuke MIYATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20240063267
- Publication date Feb 22, 2024
- mqSemi AG
- Munaf RAHIMO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20240055506
- Publication date Feb 15, 2024
- Fuji Electric Co., Ltd.
- Takashi YOSHIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20240055498
- Publication date Feb 15, 2024
- mqSemi AG
- Munaf RAHIMO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD STOP IGBT WITH GROWN INJECTION REGION
- Publication number 20240055484
- Publication date Feb 15, 2024
- IPOWER SEMICONDUCTOR
- HAMZA YILMAZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240047200
- Publication date Feb 8, 2024
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE HAVING A FIELD PLATE
- Publication number 20240047573
- Publication date Feb 8, 2024
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240047454
- Publication date Feb 8, 2024
- Mitsubishi Electric Corporation
- Hidenori FUJII
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH AN INSULATED TRENCH GATE ELECTRODE...
- Publication number 20240038879
- Publication date Feb 1, 2024
- Hitachi Energy Switzerland AG
- Luca DE MICHIELIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CELL STRUCTURES OF INSULATED GATE BIPOLAR TRANSISTOR IGBT WITH A CO...
- Publication number 20240038835
- Publication date Feb 1, 2024
- Nexperia Technology (Shanghai) Ltd.
- Xukun Zhang
- H01 - BASIC ELECTRIC ELEMENTS

with a recess formed by etching in the source/emitter contact region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Power semiconductor device and manufacturing method thereof

Semiconductor device

Methods and devices related to radio frequency devices

Power semiconductor device with p-contact and doped insulation bloc...

Semiconductor device, preparation method therefor and electrical eq...

Semiconductor device

Semiconductor device and manufacturing method of semiconductor device

Semiconductor device with insulated gate bipolar transistor region...

Semiconductor device and manufacturing method

Power semiconductor device having elevated source regions and reces...

Semiconductor device and manufacturing method therefor

Method of manufacturing semiconductor device with silicon carbide body

Semiconductor device and method of manufacturing the same

Semiconductor device including IGBT, boundary, and diode regions

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device and preparation method thereof

IGBT chip having folded composite gate structure

Diode structure of a power semiconductor device

Power semiconductor device having overvoltage protection and method...

Semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device and method for manufacturing the same

Transistor device having a field plate in an elongate active trench

Back side dopant activation in field stop IGBT

Method for manufacturing an electronic device

Semiconductor device and method for producing same

Insulated-gate semiconductor device and method of manufacturing the...

Semiconductor device and preparation method therefor

Semiconductor device comprising a buffer layer including a complex...

Reverse recovery charge reduction in semiconductor devices

Patents Applicationslast 30 patents

METHODS AND DEVICES RELATED TO RADIO FREQUENCY DEVICES

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

TRENCH GATE TYPE IGBT

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR...

RECESS GATE TRANSISTOR AND METHOD

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

FIELD STOP IGBT WITH GROWN INJECTION REGION

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

TRANSISTOR DEVICE HAVING A FIELD PLATE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE WITH AN INSULATED TRENCH GATE ELECTRODE...

CELL STRUCTURES OF INSULATED GATE BIPOLAR TRANSISTOR IGBT WITH A CO...