with a Schottky gate

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CPC
H01L29/66848

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66848with a Schottky gate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
3D semiconductor devices and structures with metal layers
- Patent number 12,027,518
- Issue date Jul 2, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor devices and structures with metal layers
- Patent number 11,984,445
- Issue date May 14, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
3D semiconductor devices and structures with metal layers
- Patent number 11,646,309
- Issue date May 9, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D integrated circuit device and structure with hybrid bonding
- Patent number 11,605,630
- Issue date Mar 14, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method to form a 3D integrated circuit
- Patent number 11,374,118
- Issue date Jun 28, 2022
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for unipolar charge balanced semiconductor powe...
- Patent number 11,233,157
- Issue date Jan 25, 2022
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D device and devices with bonding
- Patent number 11,101,266
- Issue date Aug 24, 2021
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate semiconductor device having trench termination struc...
- Patent number 11,081,554
- Issue date Aug 3, 2021
- Semiconductor Components Industries, LLC
- Zia Hossain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate field effect transistor having passivated schottky b...
- Patent number 11,043,571
- Issue date Jun 22, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D integrated circuit
- Patent number 11,018,133
- Issue date May 25, 2021
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device
- Patent number 10,910,364
- Issue date Feb 2, 2021
- MONOLITAIC 3D INC.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,811,371
- Issue date Oct 20, 2020
- Mitsubishi Electric Corporation
- Naoto Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable breakdown voltage RF FET devices
- Patent number 10,804,364
- Issue date Oct 13, 2020
- International Business Machines Corporation
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable breakdown voltage RF FET devices
- Patent number 10,790,369
- Issue date Sep 29, 2020
- International Business Machines Corporation
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable breakdown voltage RF FET devices
- Patent number 10,770,557
- Issue date Sep 8, 2020
- International Business Machines Corporation
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable breakdown voltage RF FET devices
- Patent number 10,680,074
- Issue date Jun 9, 2020
- International Business Machines Corporation
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable breakdown voltage RF FET devices
- Patent number 10,629,692
- Issue date Apr 21, 2020
- International Business Machines Corporation
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, related manufacturing method, and related ele...
- Patent number 10,431,588
- Issue date Oct 1, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Gong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench vertical JFET with ladder termination
- Patent number 10,367,099
- Issue date Jul 30, 2019
- United Silicon Carbide, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Turnable breakdown voltage RF FET devices
- Patent number 10,109,716
- Issue date Oct 23, 2018
- International Business Machines Corporation
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable breakdown voltage RF FET devices
- Patent number 10,090,391
- Issue date Oct 2, 2018
- International Business Machines Corporation
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench vertical JFET with ladder termination
- Patent number 10,050,154
- Issue date Aug 14, 2018
- United Silicon Carbide, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable breakdown voltage RF FET devices
- Patent number 10,038,063
- Issue date Jul 31, 2018
- International Business Machines Corporation
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, related manufacturing method, and related ele...
- Patent number 9,966,379
- Issue date May 8, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Gong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor contacts
- Patent number 9,761,496
- Issue date Sep 12, 2017
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a rectifying...
- Patent number 9,608,092
- Issue date Mar 28, 2017
- Infineon Technologies AG
- Jens Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate type semiconductor device and method of producing the same
- Patent number 9,559,188
- Issue date Jan 31, 2017
- Fuji Electric Co., Ltd.
- Shun-ichi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation method of a germanium-based schottky junction
- Patent number 9,484,208
- Issue date Nov 1, 2016
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance power cell for RF power amplifier
- Patent number 9,418,992
- Issue date Aug 16, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jun-De Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures having a gate field plate and methods for...
- Patent number 9,419,083
- Issue date Aug 16, 2016
- Raytheon Company
- John P. Bettencourt
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS
- Publication number 20240304617
- Publication date Sep 12, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS
- Publication number 20240222368
- Publication date Jul 4, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240194739
- Publication date Jun 13, 2024
- Kabushiki Kaisha Toshiba
- Shotaro BABA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS
- Publication number 20240120332
- Publication date Apr 11, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Trench Device Configurations for Radiation-Environment App...
- Publication number 20230352304
- Publication date Nov 2, 2023
- SCDevice LLC
- Sudarsan Uppili
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20230047842
- Publication date Feb 16, 2023
- Panasonic Holdings Corporation
- Masahiro OGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TEST STRUCTURE AND METHOD FOR MANUFACTURING SAME
- Publication number 20230020140
- Publication date Jan 19, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Shuhao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Transistor and Method for Manufacturing the Same
- Publication number 20230006053
- Publication date Jan 5, 2023
- Nippon Telegraph and Telephone Corporation
- Takuya Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS
- Publication number 20220328474
- Publication date Oct 13, 2022
- Monolithic 3D Inc.
- Zvi Or-Bach
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
3D DEVICE AND DEVICES WITH BONDING
- Publication number 20210125981
- Publication date Apr 29, 2021
- MonolithIC 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D INTEGRATED CIRCUIT DEVICE AND STRUCTURE WITH BONDING
- Publication number 20210104517
- Publication date Apr 8, 2021
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D INTEGRATED CIRCUIT
- Publication number 20200365583
- Publication date Nov 19, 2020
- MonolithIC 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM A 3D INTEGRATED CIRCUIT
- Publication number 20200350310
- Publication date Nov 5, 2020
- MonolithIC 3D Inc.
- Zvi Or-Bach
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
SYSTEMS AND METHODS FOR UNIPOLAR CHARGE BALANCED SEMICONDUCTOR POWE...
- Publication number 20200105944
- Publication date Apr 2, 2020
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE
- Publication number 20190237461
- Publication date Aug 1, 2019
- MonolithIC 3D Inc.
- Zvi Or-Bach
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20190123000
- Publication date Apr 25, 2019
- Mitsubishi Electric Corporation
- Naoto ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE SEMICONDUCTOR DEVICE HAVING TRENCH TERMINATION STRUC...
- Publication number 20190115436
- Publication date Apr 18, 2019
- Semiconductor Components Industries, LLC
- Zia HOSSAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Vertical JFET With Ladder Termination
- Publication number 20180342626
- Publication date Nov 29, 2018
- UNITED SILICON CARBIDE, INC.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES
- Publication number 20180337241
- Publication date Nov 22, 2018
- International Business Machines Corporation
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES
- Publication number 20180323268
- Publication date Nov 8, 2018
- International Business Machines Corporation
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES
- Publication number 20180269292
- Publication date Sep 20, 2018
- International Business Machines Corporation
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELE...
- Publication number 20180226413
- Publication date Aug 9, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- GONG ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES
- Publication number 20180226477
- Publication date Aug 9, 2018
- International Business Machines Corporation
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES
- Publication number 20180069088
- Publication date Mar 8, 2018
- International Business Machines Corporation
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE AREA AND SCHOTTKY BARRIER HEIGHT ENGINEERING FOR CONTACT TR...
- Publication number 20180006141
- Publication date Jan 4, 2018
- International Business Machines Corporation
- Jody Fronheiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE AREA AND SCHOTTKY BARRIER HEIGHT ENGINEERING FOR CONTACT TR...
- Publication number 20180006140
- Publication date Jan 4, 2018
- International Business Machines Corporation
- Jody Fronheiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20170207183
- Publication date Jul 20, 2017
- Mitsubishi Electric Corporation
- Naoto ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE FIELD EFFECT TRANSISTOR HAVING PASSIVATED SCHOTTKY B...
- Publication number 20170133476
- Publication date May 11, 2017
- Acorn Technologies, Inc.
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Vertical JFET With Ladder Termination
- Publication number 20170133518
- Publication date May 11, 2017
- UNITED SILICON CARBIDE, INC.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE POWER CELL FOR RF POWER AMPLIFIER
- Publication number 20160190127
- Publication date Jun 30, 2016
- Taiwan Semiconductor Manfacturing Co., Ltd.
- Jun-De Jin
- H01 - BASIC ELECTRIC ELEMENTS

with a Schottky gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

3D semiconductor devices and structures with metal layers

3D semiconductor devices and structures with metal layers

3D semiconductor devices and structures with metal layers

3D integrated circuit device and structure with hybrid bonding

Method to form a 3D integrated circuit

Systems and methods for unipolar charge balanced semiconductor powe...

3D device and devices with bonding

Insulated gate semiconductor device having trench termination struc...

Insulated gate field effect transistor having passivated schottky b...

3D integrated circuit

3D semiconductor device

Semiconductor device and manufacturing method thereof

Tunable breakdown voltage RF FET devices

Tunable breakdown voltage RF FET devices

Tunable breakdown voltage RF FET devices

Tunable breakdown voltage RF FET devices

Tunable breakdown voltage RF FET devices

Semiconductor device, related manufacturing method, and related ele...

Trench vertical JFET with ladder termination

Turnable breakdown voltage RF FET devices

Tunable breakdown voltage RF FET devices

Trench vertical JFET with ladder termination

Tunable breakdown voltage RF FET devices

Semiconductor device, related manufacturing method, and related ele...

Field effect transistor contacts

Method of manufacturing a semiconductor device having a rectifying...

Trench gate type semiconductor device and method of producing the same

Preparation method of a germanium-based schottky junction

High performance power cell for RF power amplifier

Semiconductor structures having a gate field plate and methods for...

Patents Applicationslast 30 patents

3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS

3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS

Vertical Trench Device Configurations for Radiation-Environment App...

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR TEST STRUCTURE AND METHOD FOR MANUFACTURING SAME

Field-Effect Transistor and Method for Manufacturing the Same

3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS

3D DEVICE AND DEVICES WITH BONDING

3D INTEGRATED CIRCUIT DEVICE AND STRUCTURE WITH BONDING

3D INTEGRATED CIRCUIT

METHOD TO FORM A 3D INTEGRATED CIRCUIT

SYSTEMS AND METHODS FOR UNIPOLAR CHARGE BALANCED SEMICONDUCTOR POWE...

3D SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

INSULATED GATE SEMICONDUCTOR DEVICE HAVING TRENCH TERMINATION STRUC...

Trench Vertical JFET With Ladder Termination

TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES

TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES

TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES

SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELE...

TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES

TUNABLE BREAKDOWN VOLTAGE RF FET DEVICES

SURFACE AREA AND SCHOTTKY BARRIER HEIGHT ENGINEERING FOR CONTACT TR...

SURFACE AREA AND SCHOTTKY BARRIER HEIGHT ENGINEERING FOR CONTACT TR...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

INSULATED GATE FIELD EFFECT TRANSISTOR HAVING PASSIVATED SCHOTTKY B...

Trench Vertical JFET With Ladder Termination

HIGH PERFORMANCE POWER CELL FOR RF POWER AMPLIFIER