with a single crystalline channel formed on the silicon substrate after insulating device isolation

Industry

CPC
H01L29/66651

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66651with a single crystalline channel formed on the silicon substrate after insulating device isolation

Industries

Patents Grantslast 30 patents

Information Patent Grant
Silicon on insulator device with partially recessed gate
- Patent number 11,948,977
- Issue date Apr 2, 2024
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 11,869,800
- Issue date Jan 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,791,410
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Fang-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 11,728,429
- Issue date Aug 15, 2023
- Samsung Electronics Co., Ltd.
- Yul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 11,695,012
- Issue date Jul 4, 2023
- Renesas Electronics Corporation
- Takaaki Tsunomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,600,577
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulator device with partially recessed gate
- Patent number 11,398,554
- Issue date Jul 26, 2022
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing FET transistors
- Patent number 11,264,479
- Issue date Mar 1, 2022
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Laurent Grenouillet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,222,978
- Issue date Jan 11, 2022
- Samsung Electronics Co., Ltd.
- Yul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,063,149
- Issue date Jul 13, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Fang-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having conducting member for electrically coup...
- Patent number 11,004,972
- Issue date May 11, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Bo Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with selective dopant deactivation underneath gate
- Patent number 10,985,246
- Issue date Apr 20, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Dhanyakumar Mahaveer Sathaiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 10,978,556
- Issue date Apr 13, 2021
- United Microelectronics Corp.
- Wanxun He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce etch variation using ion implantation
- Patent number 10,854,729
- Issue date Dec 1, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices
- Patent number 10,811,255
- Issue date Oct 20, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 10,756,115
- Issue date Aug 25, 2020
- Renesas Electronics Corporation
- Takaaki Tsunomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain compensation in transistors
- Patent number 10,748,993
- Issue date Aug 18, 2020
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resistance readout FET for cognitive device
- Patent number 10,741,560
- Issue date Aug 11, 2020
- International Business Machines Corporation
- Effendi Leobandung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 10,692,750
- Issue date Jun 23, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with airgap
- Patent number 10,692,753
- Issue date Jun 23, 2020
- International Business Machines Corporation
- Mark D. Jaffe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with selectively strained device regions and me...
- Patent number 10,529,738
- Issue date Jan 7, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Raj Verma Purakh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 10,510,775
- Issue date Dec 17, 2019
- Renesas Electronics Corporation
- Takaaki Tsunomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,510,888
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Fang-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce etch variation using ion implantation
- Patent number 10,490,648
- Issue date Nov 26, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including resonant tunneling diode structure h...
- Patent number 10,453,945
- Issue date Oct 22, 2019
- ATOMERA INCORPORATED
- Robert J. Mears
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with self-aligned capacitor device
- Patent number 10,418,364
- Issue date Sep 17, 2019
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain compensation in transistors
- Patent number 10,388,733
- Issue date Aug 20, 2019
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 10,256,297
- Issue date Apr 9, 2019
- United Microelectronics Corp.
- Wanxun He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device including a resonant tunne...
- Patent number 10,249,745
- Issue date Apr 2, 2019
- ATOMERA INCORPORATED
- Robert J. Mears
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain compensation in transistors
- Patent number 10,224,399
- Issue date Mar 5, 2019
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20230377942
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230369487
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang-Liang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230282647
- Publication date Sep 7, 2023
- RENESAS ELECTRONICS CORPORATION
- Takaaki TSUNOMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE DIELECTRIC FOR THIN FILM OXIDE TRANSISTORS
- Publication number 20230080212
- Publication date Mar 16, 2023
- Intel Corporation
- Christopher Connor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON ON INSULATOR DEVICE WITH PARTIALLY RECESSED GATE
- Publication number 20220328632
- Publication date Oct 13, 2022
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20220102555
- Publication date Mar 31, 2022
- Samsung Electronics Co., Ltd.
- Yul LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210343866
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF DOPANT DEACTIVATION UNDERNEATH GATE
- Publication number 20210234003
- Publication date Jul 29, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dhanyakumar Mahaveer SATHAIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20210043454
- Publication date Feb 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pei-Wei Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20200343268
- Publication date Oct 29, 2020
- Renesas Electronics Corporation
- Takaaki Tsunomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a Semiconductor Device
- Publication number 20200321238
- Publication date Oct 8, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200098917
- Publication date Mar 26, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fang-Liang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20200066757
- Publication date Feb 27, 2020
- Renesas Electronics Corporation
- Takaaki Tsunomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO REDUCE ETCH VARIATION USING ION IMPLANTATION
- Publication number 20200020784
- Publication date Jan 16, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20190393248
- Publication date Dec 26, 2019
- RENESAS ELECTRONICS CORPORATION
- Nobuo TSUBOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN COMPENSATION IN TRANSISTORS
- Publication number 20190348499
- Publication date Nov 14, 2019
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20190280123
- Publication date Sep 12, 2019
- Samsung Electronics Co., Ltd.
- Yul LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20190189738
- Publication date Jun 20, 2019
- UNITED MICROELECTRONICS CORP.
- WANXUN HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH SELECTIVE DOPANT DEACTIVATION UNDERNEATH GATE
- Publication number 20190165104
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dhanyakumar Mahaveer SATHAIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN COMPENSATION IN TRANSISTORS
- Publication number 20190148491
- Publication date May 16, 2019
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH AIRGAP
- Publication number 20190139819
- Publication date May 9, 2019
- International Business Machines Corporation
- Mark D. JAFFE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a Semiconductor Device
- Publication number 20180269099
- Publication date Sep 20, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structures Employing Strained Material Layers with De...
- Publication number 20180197954
- Publication date Jul 12, 2018
- Taiwan Semiconductor Manufacturing company Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON ON INSULATOR DEVICE WITH PARTIALLY RECESSED GATE
- Publication number 20180145135
- Publication date May 24, 2018
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20180122897
- Publication date May 3, 2018
- UNITED MICROELECTRONICS CORP.
- WANXUN HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH SELF-ALIGNED CAPACITOR DEVICE
- Publication number 20180061839
- Publication date Mar 1, 2018
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20180053829
- Publication date Feb 22, 2018
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A SEMICONDUCTOR DEVICE INCLUDING A RESONANT TUNNE...
- Publication number 20180040725
- Publication date Feb 8, 2018
- ATOMERA INCORPORATED
- ROBERT J. MEARS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING RESONANT TUNNELING DIODE STRUCTURE H...
- Publication number 20180040724
- Publication date Feb 8, 2018
- ATOMERA INCORPORATED
- ROBERT J. MEARS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20180019260
- Publication date Jan 18, 2018
- Renesas Electronics Corporation
- Takaaki Tsunomura
- H01 - BASIC ELECTRIC ELEMENTS

with a single crystalline channel formed on the silicon substrate after insulating device isolation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silicon on insulator device with partially recessed gate

Method for fabricating a semiconductor device

Semiconductor device and manufacturing method thereof

Method of fabricating semiconductor device

Semiconductor device and manufacturing method of the same

Semiconductor devices

Silicon on insulator device with partially recessed gate

Process for producing FET transistors

Semiconductor device and method of fabricating the same

Semiconductor device and manufacturing method thereof

Semiconductor device having conducting member for electrically coup...

MOSFET with selective dopant deactivation underneath gate

Semiconductor device and method for fabricating the same

Method to reduce etch variation using ion implantation

Methods of forming semiconductor devices

Semiconductor device and manufacturing method of the same

Strain compensation in transistors

High resistance readout FET for cognitive device

Method for fabricating a semiconductor device

Semiconductor structure with airgap

Integrated circuits with selectively strained device regions and me...

Semiconductor device and manufacturing method of the same

Semiconductor device and manufacturing method thereof

Method to reduce etch variation using ion implantation

Semiconductor device including resonant tunneling diode structure h...

Semiconductor device structure with self-aligned capacitor device

Strain compensation in transistors

Semiconductor device and method for fabricating the same

Method for making a semiconductor device including a resonant tunne...

Strain compensation in transistors

Patents Applicationslast 30 patents

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

GATE DIELECTRIC FOR THIN FILM OXIDE TRANSISTORS

SILICON ON INSULATOR DEVICE WITH PARTIALLY RECESSED GATE

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD OF DOPANT DEACTIVATION UNDERNEATH GATE

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Method for Fabricating a Semiconductor Device

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

METHOD TO REDUCE ETCH VARIATION USING ION IMPLANTATION

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

STRAIN COMPENSATION IN TRANSISTORS

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

MOSFET WITH SELECTIVE DOPANT DEACTIVATION UNDERNEATH GATE

STRAIN COMPENSATION IN TRANSISTORS

SEMICONDUCTOR STRUCTURE WITH AIRGAP

Method for Fabricating a Semiconductor Device

Semiconductor Structures Employing Strained Material Layers with De...

SILICON ON INSULATOR DEVICE WITH PARTIALLY RECESSED GATE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE STRUCTURE WITH SELF-ALIGNED CAPACITOR DEVICE

METHOD OF FORMING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

METHOD FOR MAKING A SEMICONDUCTOR DEVICE INCLUDING A RESONANT TUNNE...

SEMICONDUCTOR DEVICE INCLUDING RESONANT TUNNELING DIODE STRUCTURE H...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME