TREA

with a single crystalline channel formed on the silicon substrate after insulating device isolation

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Industry

  • CPC
  • H01L29/66651
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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66651with a single crystalline channel formed on the silicon substrate after insulating device isolation
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