TREA

with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate

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Industry

  • CPC
  • H01L29/66287
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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66287with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate
Industries