with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate

Industry

CPC
H01L29/66287

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66287with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate

Industries

Patents Grantslast 30 patents

Information Patent Grant
Bipolar transistor
- Patent number 11,916,135
- Issue date Feb 27, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Viorel Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Separate epitaxy layers for nanowire stack GAA device
- Patent number 11,742,405
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor epitaxy bordering isolation structure
- Patent number 11,658,032
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Chin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar-transistor device and corresponding fabrication process
- Patent number 11,621,324
- Issue date Apr 4, 2023
- STMicroelectronics (Crolles 2) SAS
- Alexis Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back ballasted vertical NPN transistor
- Patent number 11,521,961
- Issue date Dec 6, 2022
- Texas Instruments Incorporated
- Akram Ali Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and method for bipolar transistor stac...
- Patent number 11,488,950
- Issue date Nov 1, 2022
- GLOBALFOUNDRIES U.S. INC.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Virtual bulk in semiconductor on insulator technology
- Patent number 11,374,092
- Issue date Jun 28, 2022
- GLOBALFOUNDRIES U.S. Inc.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with vertically integrated resistor
- Patent number 11,189,701
- Issue date Nov 30, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Separate epitaxy layers for nanowire stack GAA device
- Patent number 11,038,036
- Issue date Jun 15, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar-transistor device and corresponding fabrication process
- Patent number 11,038,017
- Issue date Jun 15, 2021
- STMicroelectronics (Crolles 2) SAS
- Alexis Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor epitaxy bordering isolation structure
- Patent number 10,957,540
- Issue date Mar 23, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Chin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back ballasted vertical NPN transistor
- Patent number 10,700,055
- Issue date Jun 30, 2020
- Texas Instruments Incorporated
- Akram Ali Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor
- Patent number 10,573,730
- Issue date Feb 25, 2020
- Infineon Technologies AG
- Armin Tilke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor epitaxy bordering isolation structure
- Patent number 10,522,353
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Chin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with strain reduction
- Patent number 10,332,805
- Issue date Jun 25, 2019
- Avago Technologies International Sales Pte. Limited
- Thomas Edward Dungan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical p-type, n-type, p-type (PNP) junction integrated circuit (...
- Patent number 10,211,324
- Issue date Feb 19, 2019
- International Business Machines Corporation
- Joseph R. Greco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with an airgap for reduced base-emitter capacitance and...
- Patent number 10,211,090
- Issue date Feb 19, 2019
- GLOBALFOUNDRIES Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cyclic epitaxy process to form air gap isolation for a bipolar tran...
- Patent number 10,186,605
- Issue date Jan 22, 2019
- STMicroelectronics (Crolles 2) SAS
- Alexis Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor compatible with vertical FET fabrication
- Patent number 10,170,463
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor epitaxy bordering isolation structure
- Patent number 10,147,609
- Issue date Dec 4, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Chin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of integrated circuit structures for bipolar transistors
- Patent number 10,121,884
- Issue date Nov 6, 2018
- GLOBALFOUNDRIES Inc.
- Vibhor Jain
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 10,062,750
- Issue date Aug 28, 2018
- Fuji Electric Co., Ltd.
- Yusuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor
- Patent number 10,032,893
- Issue date Jul 24, 2018
- Infineon Technologies AG
- Armin Tilke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor compatible with vertical FET fabrication
- Patent number 9,929,145
- Issue date Mar 27, 2018
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical P-type, N-type, P-type (PNP) junction integrated circuit (...
- Patent number 9,837,514
- Issue date Dec 5, 2017
- International Business Machines Corporation
- Joseph R. Greco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to build vertical PNP in a BiCMOS technology with improved s...
- Patent number 9,735,259
- Issue date Aug 15, 2017
- International Business Machines Corporation
- Joseph R. Greco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure and a method of manufacturing a bipola...
- Patent number 9,673,294
- Issue date Jun 6, 2017
- Infineon Technologies Dresden GmbH
- Dmitri Alex Tschumakow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically base-connected bipolar transistor
- Patent number 9,553,177
- Issue date Jan 24, 2017
- Micron Technology, Inc.
- Badih El-Kareh
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Heterojunction bipolar transistor with improved performance and bre...
- Patent number 9,368,608
- Issue date Jun 14, 2016
- GLOBALFOUNDRIES Inc.
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a bipolar transistor with maskless self-aligned e...
- Patent number 9,356,097
- Issue date May 31, 2016
- GLOBALFOUNDRIES Inc.
- David L. Harame
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240258410
- Publication date Aug 1, 2024
- Samsung Electronics Co., Ltd.
- Dongwoo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Separate Epitaxy Layers for Nanowire Stack GAA Device
- Publication number 20230352551
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR
- Publication number 20230246093
- Publication date Aug 3, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Viorel ONTALUS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Separate Epitaxy Layers for Nanowire Stack GAA Device
- Publication number 20210305390
- Publication date Sep 30, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR-TRANSISTOR DEVICE AND CORRESPONDING FABRICATION PROCESS
- Publication number 20210273052
- Publication date Sep 2, 2021
- STMicroelectronics (Crolles 2) SAS
- Alexis GAUTHIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Epitaxy Bordering Isolation Structure
- Publication number 20210210350
- Publication date Jul 8, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Chin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIRTUAL BULK IN SEMICONDUCTOR ON INSULATOR TECHNOLOGY
- Publication number 20210091180
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES INC.
- John J. PEKARIK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK BALLASTED VERTICAL NPN TRANSISTOR
- Publication number 20200328204
- Publication date Oct 15, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Akram Ali Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Epitaxy Bordering Isolation Structure
- Publication number 20200126793
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Chin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEPARATE EPITAXY LAYERS FOR NANOWIRE STACK GAA DEVICE
- Publication number 20200098879
- Publication date Mar 26, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK BALLASTED VERTICAL NPN TRANSISTOR
- Publication number 20190181134
- Publication date Jun 13, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Akram Ali Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH STRAIN REDUCTION
- Publication number 20190131175
- Publication date May 2, 2019
- Avago Technologies General IP (Singapore) PTE. LTD.
- Thomas Edward Dungan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Epitaxy Bordering Isolation Structure
- Publication number 20180350601
- Publication date Dec 6, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Chin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR
- Publication number 20180308961
- Publication date Oct 25, 2018
- INFINEON TECHNOLOGIES AG
- Armin Tilke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO BUILD VERTICAL PNP IN A BICMOS TECHNOLOGY WITH IMPROVED S...
- Publication number 20180069105
- Publication date Mar 8, 2018
- International Business Machines Corporation
- Joseph R. Greco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL P-TYPE, N-TYPE, P-TYPE (PNP) JUNCTION INTEGRATED CIRCUIT (...
- Publication number 20160049492
- Publication date Feb 18, 2016
- International Business Machines Corporation
- Joseph R. Greco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR STRUCTURE AND A METHOD OF MANUFACTURING A BIPOLA...
- Publication number 20150357446
- Publication date Dec 10, 2015
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Dmitri Alex Tschumakow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH EXTRINSIC BASE REGION AND METHODS OF FABRIC...
- Publication number 20150357447
- Publication date Dec 10, 2015
- International Business Machines Corporation
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH MASKLESS SELF-ALIGNED EMITTER
- Publication number 20140374802
- Publication date Dec 25, 2014
- International Business Machines Corporation
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BIPOLAR JUNCTION TRANSISTOR HAVING SELF-PLANARIZING IS...
- Publication number 20140332927
- Publication date Nov 13, 2014
- International Business Machines Corporation
- NATALIE B. FEILCHENFELD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION STRUCTURES AND METHODS FOR BIPOLAR JUNCTION TRANSI...
- Publication number 20140327111
- Publication date Nov 6, 2014
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE NOISE REDUCTION IN TRANSISTOR DEVICES
- Publication number 20140291681
- Publication date Oct 2, 2014
- Stephen Joseph KOVACIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH REDUCED EPITAXIAL BASE FACETS EFF...
- Publication number 20140264341
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction Bipolar Transistor having a Germanium Raised Extrins...
- Publication number 20140264457
- Publication date Sep 18, 2014
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Edward Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR DEVICE HAVING A MONOCRYSTALLINE SEMICONDUCTOR INTRINSIC BAS...
- Publication number 20140246676
- Publication date Sep 4, 2014
- International Business Machines Corporation
- Renata A. Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH REDUCED BASE-COLLECTOR JUNCTION C...
- Publication number 20140151852
- Publication date Jun 5, 2014
- International Business Machines Corporation
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor and Method of Manufacturing a Transistor
- Publication number 20140027776
- Publication date Jan 30, 2014
- INFINEON TECHNOLOGIES AG
- Klaus Diefenbeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL WIRING FOR A BIPOLAR JUNCTION TRANSISTOR INCLUDING A SELF-ALI...
- Publication number 20140021587
- Publication date Jan 23, 2014
- International Business Machines Corporation
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR IN BIPOLAR-CMOS TECHNOLOGY
- Publication number 20130328130
- Publication date Dec 12, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Hiroshi YASUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH REDUCED BASE-COLLECTOR JUNCTION C...
- Publication number 20130277804
- Publication date Oct 24, 2013
- International Business Machines Corporation
- Peng Cheng
- H01 - BASIC ELECTRIC ELEMENTS

with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Bipolar transistor

Separate epitaxy layers for nanowire stack GAA device

Semiconductor epitaxy bordering isolation structure

Bipolar-transistor device and corresponding fabrication process

Back ballasted vertical NPN transistor

Integrated circuit structure and method for bipolar transistor stac...

Virtual bulk in semiconductor on insulator technology

Bipolar junction transistor with vertically integrated resistor

Separate epitaxy layers for nanowire stack GAA device

Bipolar-transistor device and corresponding fabrication process

Semiconductor epitaxy bordering isolation structure

Back ballasted vertical NPN transistor

Bipolar transistor

Semiconductor epitaxy bordering isolation structure

Semiconductor structure with strain reduction

Vertical p-type, n-type, p-type (PNP) junction integrated circuit (...

Transistor with an airgap for reduced base-emitter capacitance and...

Cyclic epitaxy process to form air gap isolation for a bipolar tran...

Bipolar transistor compatible with vertical FET fabrication

Semiconductor epitaxy bordering isolation structure

Fabrication of integrated circuit structures for bipolar transistors

Semiconductor device and method of manufacturing semiconductor device

Bipolar transistor

Bipolar transistor compatible with vertical FET fabrication

Vertical P-type, N-type, P-type (PNP) junction integrated circuit (...

Method to build vertical PNP in a BiCMOS technology with improved s...

Bipolar transistor structure and a method of manufacturing a bipola...

Vertically base-connected bipolar transistor

Heterojunction bipolar transistor with improved performance and bre...

Method of forming a bipolar transistor with maskless self-aligned e...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES

Separate Epitaxy Layers for Nanowire Stack GAA Device

BIPOLAR TRANSISTOR

Separate Epitaxy Layers for Nanowire Stack GAA Device

BIPOLAR-TRANSISTOR DEVICE AND CORRESPONDING FABRICATION PROCESS

Semiconductor Epitaxy Bordering Isolation Structure

VIRTUAL BULK IN SEMICONDUCTOR ON INSULATOR TECHNOLOGY

BACK BALLASTED VERTICAL NPN TRANSISTOR

Semiconductor Epitaxy Bordering Isolation Structure

SEPARATE EPITAXY LAYERS FOR NANOWIRE STACK GAA DEVICE

BACK BALLASTED VERTICAL NPN TRANSISTOR

SEMICONDUCTOR STRUCTURE WITH STRAIN REDUCTION

Semiconductor Epitaxy Bordering Isolation Structure

BIPOLAR TRANSISTOR

METHOD TO BUILD VERTICAL PNP IN A BICMOS TECHNOLOGY WITH IMPROVED S...

VERTICAL P-TYPE, N-TYPE, P-TYPE (PNP) JUNCTION INTEGRATED CIRCUIT (...

BIPOLAR TRANSISTOR STRUCTURE AND A METHOD OF MANUFACTURING A BIPOLA...

BIPOLAR TRANSISTOR WITH EXTRINSIC BASE REGION AND METHODS OF FABRIC...

BIPOLAR TRANSISTOR WITH MASKLESS SELF-ALIGNED EMITTER

SELF-ALIGNED BIPOLAR JUNCTION TRANSISTOR HAVING SELF-PLANARIZING IS...

TRENCH ISOLATION STRUCTURES AND METHODS FOR BIPOLAR JUNCTION TRANSI...

PHASE NOISE REDUCTION IN TRANSISTOR DEVICES

BIPOLAR JUNCTION TRANSISTORS WITH REDUCED EPITAXIAL BASE FACETS EFF...

Heterojunction Bipolar Transistor having a Germanium Raised Extrins...

BIPOLAR DEVICE HAVING A MONOCRYSTALLINE SEMICONDUCTOR INTRINSIC BAS...

BIPOLAR JUNCTION TRANSISTORS WITH REDUCED BASE-COLLECTOR JUNCTION C...

Transistor and Method of Manufacturing a Transistor

LOCAL WIRING FOR A BIPOLAR JUNCTION TRANSISTOR INCLUDING A SELF-ALI...

BIPOLAR TRANSISTOR IN BIPOLAR-CMOS TECHNOLOGY

BIPOLAR JUNCTION TRANSISTORS WITH REDUCED BASE-COLLECTOR JUNCTION C...