with a step of doping the vertical sidewall

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H01L29/66803

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66803with a step of doping the vertical sidewall

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,166,069
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zheng-Long Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices and semiconductor dev...
- Patent number 12,154,829
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chandrashekhar Prakash Savant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and methods of forming same
- Patent number 12,132,107
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for fabrication of a vertical fin-based field eff...
- Patent number 12,125,914
- Issue date Oct 22, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Punch through stopper in bulk finFET device
- Patent number 12,119,393
- Issue date Oct 15, 2024
- Adeia Semiconductor Solutions LLC
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mechanism for finFET well doping
- Patent number 12,112,975
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform implant regions in a semiconductor ridge of a FinfET
- Patent number 12,113,121
- Issue date Oct 8, 2024
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned replacement metal source/drain FINFET
- Patent number 12,062,703
- Issue date Aug 13, 2024
- TESSERA LLC
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FinFET) device having position-depende...
- Patent number 12,046,638
- Issue date Jul 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhong-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a heterostructure or a stacked semiconducto...
- Patent number 12,027,592
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having fins and method of fabricating the same
- Patent number 12,027,625
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Hao Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming source/drain epitaxial stacks
- Patent number 12,021,142
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type strained channel in a fin field effect transistor (FinFET) d...
- Patent number 12,021,143
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 12,021,082
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with source/drain multi-layer structure and...
- Patent number 11,990,550
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with source/drain structure having modified...
- Patent number 11,973,127
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with gate over well boundary and related metho...
- Patent number 11,942,325
- Issue date Mar 26, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ketankumar Harishbhai Tailor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside contact structures and fabrication for metal on both sides...
- Patent number 11,935,933
- Issue date Mar 19, 2024
- Intel Corporation
- Patrick Morrow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure and method for manufacturing thereof
- Patent number 11,929,398
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static random access memory cell
- Patent number 11,864,368
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jordan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal transfer doping method for fin-like field effect transistor
- Patent number 11,862,713
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical FET with contact to gate above active fin
- Patent number 11,855,191
- Issue date Dec 26, 2023
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for FinFET devices
- Patent number 11,855,089
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yong-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure with doped region
- Patent number 11,855,176
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming barrier layer and method for manufacturing semic...
- Patent number 11,830,738
- Issue date Nov 28, 2023
- ASM IP Holding B.V.
- Ryu Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type strained channel in a fin field effect transistor (FinFET) d...
- Patent number 11,817,499
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,799,018
- Issue date Oct 24, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabricating method thereof
- Patent number 11,764,267
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric and isolation lower fin material for fin-based electronics
- Patent number 11,764,260
- Issue date Sep 19, 2023
- Tahoe Research, LTD.
- Walid M. Hafez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,756,997
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ka-Hing Fung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240322043
- Publication date Sep 26, 2024
- POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
- WOOYEOL MAENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING FINS AND METHOD OF FABRICATING THE SAME
- Publication number 20240313116
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Hao KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS
- Publication number 20240304724
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR FOR REDUCING HOT CARRIER DAMAGE AND METHODS...
- Publication number 20240274716
- Publication date Aug 15, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Hsin Fu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN MULTI-LAYER STRUCTURE AND...
- Publication number 20240266439
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN...
- Publication number 20240234548
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT STRUCTURES AND FABRICATION FOR METAL ON BOTH SIDES...
- Publication number 20240154011
- Publication date May 9, 2024
- Intel Corporation
- Patrick MORROW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...
- Publication number 20240096988
- Publication date Mar 21, 2024
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR
- Publication number 20240097010
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTIFUSES USING A FINFET ARCHITECTURE
- Publication number 20240063114
- Publication date Feb 22, 2024
- Micron Technology, Inc.
- Si-Woo Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED SEMICONDUCTOR DEVICE
- Publication number 20240021733
- Publication date Jan 18, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH GATE EXTENSION
- Publication number 20240014324
- Publication date Jan 11, 2024
- NXP B.V.
- Viet Thanh Dinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20230420516
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ka-Hing Fung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPUTTER TARGETS AND SOURCES FOR SELF-DOPED SOURCE AND DRAIN CONTACTS
- Publication number 20230420246
- Publication date Dec 28, 2023
- Intel Corporation
- Ilya V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FABRICATION OF A VERTICAL FIN-BASED FIELD EFF...
- Publication number 20230411525
- Publication date Dec 21, 2023
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR IMPROVING PROFILE OF INTERCONNECT STRUCTURE
- Publication number 20230411206
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Neng LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURES FOR FIN-LIKE FIELD EFFECT TRANSISTORS
- Publication number 20230387269
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Chia-Ta Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...
- Publication number 20230378359
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230352305
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zheng-Long CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT STRUCTURES AND FABRICATION FOR METAL ON BOTH SIDES...
- Publication number 20230275135
- Publication date Aug 31, 2023
- Intel Corporation
- Patrick MORROW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20230268442
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Ting Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSED TIP EXTENSION TRANSISTOR
- Publication number 20230253499
- Publication date Aug 10, 2023
- Intel Corporation
- Pratik A. PATEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...
- Publication number 20230223406
- Publication date Jul 13, 2023
- Tahoe Research, Ltd.
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UPPER AND LOWER GATE CONFIGURATIONS OF MONOLITHIC STACKED FINFET TR...
- Publication number 20230215949
- Publication date Jul 6, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH GATE OVER WELL BOUNDARY AND RELATED METHO...
- Publication number 20230215731
- Publication date Jul 6, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Ketankumar Harishbhai Tailor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FIN FINFET DEVICE INCLUDING EPITAXIAL GROWTH BARRIER ON OUTSI...
- Publication number 20230197720
- Publication date Jun 22, 2023
- Bell Semiconductor, LLC
- Qing LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...
- Publication number 20230187447
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN MULTI-LAYER STRUCTURE AND...
- Publication number 20230109135
- Publication date Apr 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FET WITH CONTACT TO GATE ABOVE ACTIVE FIN
- Publication number 20230104456
- Publication date Apr 6, 2023
- International Business Machines Corporation
- Brent ANDERSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING FINS AND METHOD OF FABRICATING THE SAME
- Publication number 20230089130
- Publication date Mar 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Hao KUO
- H01 - BASIC ELECTRIC ELEMENTS

with a step of doping the vertical sidewall

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and manufacturing method thereof

Method of manufacturing semiconductor devices and semiconductor dev...

Semiconductor structure and methods of forming same

Method and system for fabrication of a vertical fin-based field eff...

Punch through stopper in bulk finFET device

Mechanism for finFET well doping

Uniform implant regions in a semiconductor ridge of a FinfET

Self aligned replacement metal source/drain FINFET

Fin field effect transistor (FinFET) device having position-depende...

Method of manufacturing a heterostructure or a stacked semiconducto...

Semiconductor device having fins and method of fabricating the same

Method of forming source/drain epitaxial stacks

P-type strained channel in a fin field effect transistor (FinFET) d...

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Semiconductor structure with source/drain multi-layer structure and...

Semiconductor structure with source/drain structure having modified...

Transistor structure with gate over well boundary and related metho...

Backside contact structures and fabrication for metal on both sides...

FinFET structure and method for manufacturing thereof

Static random access memory cell

Conformal transfer doping method for fin-like field effect transistor

Vertical FET with contact to gate above active fin

Method and structure for FinFET devices

FinFET structure with doped region

Method for forming barrier layer and method for manufacturing semic...

P-type strained channel in a fin field effect transistor (FinFET) d...

Semiconductor structure and method for forming the same

Semiconductor device and fabricating method thereof

Dielectric and isolation lower fin material for fin-based electronics

Semiconductor structure and method for forming the same

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT DEVICE

SEMICONDUCTOR DEVICE HAVING FINS AND METHOD OF FABRICATING THE SAME

METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS

FIELD EFFECT TRANSISTOR FOR REDUCING HOT CARRIER DAMAGE AND METHODS...

SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN MULTI-LAYER STRUCTURE AND...

METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN...

BACKSIDE CONTACT STRUCTURES AND FABRICATION FOR METAL ON BOTH SIDES...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...

CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR

ANTIFUSES USING A FINFET ARCHITECTURE

STACKED SEMICONDUCTOR DEVICE

FINFET WITH GATE EXTENSION

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SPUTTER TARGETS AND SOURCES FOR SELF-DOPED SOURCE AND DRAIN CONTACTS

METHOD AND SYSTEM FOR FABRICATION OF A VERTICAL FIN-BASED FIELD EFF...

METHOD FOR IMPROVING PROFILE OF INTERCONNECT STRUCTURE

EPITAXIAL STRUCTURES FOR FIN-LIKE FIELD EFFECT TRANSISTORS

P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

BACKSIDE CONTACT STRUCTURES AND FABRICATION FOR METAL ON BOTH SIDES...

Semiconductor Device and Method of Manufacture

DIFFUSED TIP EXTENSION TRANSISTOR

NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...

UPPER AND LOWER GATE CONFIGURATIONS OF MONOLITHIC STACKED FINFET TR...

TRANSISTOR STRUCTURE WITH GATE OVER WELL BOUNDARY AND RELATED METHO...

MULTI-FIN FINFET DEVICE INCLUDING EPITAXIAL GROWTH BARRIER ON OUTSI...

ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...

SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN MULTI-LAYER STRUCTURE AND...

VERTICAL FET WITH CONTACT TO GATE ABOVE ACTIVE FIN

SEMICONDUCTOR DEVICE HAVING FINS AND METHOD OF FABRICATING THE SAME