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with a step of doping the vertical sidewall
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Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
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H01L29/66803
with a step of doping the vertical sidewall
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last 30 patents
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Semiconductor structure with source/drain structure having modified...
Patent number
11,973,127
Issue date
Apr 30, 2024
Taiwan Semiconductor Manufacturing Company, Ltd
Shahaji B. More
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Transistor structure with gate over well boundary and related metho...
Patent number
11,942,325
Issue date
Mar 26, 2024
GLOBALFOUNDRIES U.S. Inc.
Ketankumar Harishbhai Tailor
H01 - BASIC ELECTRIC ELEMENTS
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Backside contact structures and fabrication for metal on both sides...
Patent number
11,935,933
Issue date
Mar 19, 2024
Intel Corporation
Patrick Morrow
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
FinFET structure and method for manufacturing thereof
Patent number
11,929,398
Issue date
Mar 12, 2024
Taiwan Semiconductor Manufacturing Company Ltd.
Chun Hsiung Tsai
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Static random access memory cell
Patent number
11,864,368
Issue date
Jan 2, 2024
Taiwan Semiconductor Manufacturing Co., Ltd
Jordan Hsu
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Conformal transfer doping method for fin-like field effect transistor
Patent number
11,862,713
Issue date
Jan 2, 2024
Taiwan Semiconductor Manufacturing Co., Ltd
Sai-Hooi Yeong
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Method and structure for FinFET devices
Patent number
11,855,089
Issue date
Dec 26, 2023
Taiwan Semiconductor Manufacturing Company, Ltd
Yong-Yan Lu
H01 - BASIC ELECTRIC ELEMENTS
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Vertical FET with contact to gate above active fin
Patent number
11,855,191
Issue date
Dec 26, 2023
International Business Machines Corporation
Brent Anderson
H01 - BASIC ELECTRIC ELEMENTS
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FinFET structure with doped region
Patent number
11,855,176
Issue date
Dec 26, 2023
Taiwan Semiconductor Manufacturing Co., Ltd
Shahaji B. More
H01 - BASIC ELECTRIC ELEMENTS
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Method for forming barrier layer and method for manufacturing semic...
Patent number
11,830,738
Issue date
Nov 28, 2023
ASM IP Holding B.V.
Ryu Nakano
H01 - BASIC ELECTRIC ELEMENTS
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P-type strained channel in a fin field effect transistor (FinFET) d...
Patent number
11,817,499
Issue date
Nov 14, 2023
Taiwan Semiconductor Manufacturing Co., Ltd
Shahaji B. More
H01 - BASIC ELECTRIC ELEMENTS
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Semiconductor structure and method for forming the same
Patent number
11,799,018
Issue date
Oct 24, 2023
Semiconductor Manufacturing International (Shanghai) Corporation
Fei Zhou
H01 - BASIC ELECTRIC ELEMENTS
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Semiconductor device and fabricating method thereof
Patent number
11,764,267
Issue date
Sep 19, 2023
Taiwan Semiconductor Manufacturing Co., Ltd
Chun-Chieh Lu
H01 - BASIC ELECTRIC ELEMENTS
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Dielectric and isolation lower fin material for fin-based electronics
Patent number
11,764,260
Issue date
Sep 19, 2023
Tahoe Research, LTD.
Walid M. Hafez
H01 - BASIC ELECTRIC ELEMENTS
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Semiconductor structure and method for forming the same
Patent number
11,756,997
Issue date
Sep 12, 2023
Taiwan Semiconductor Manufacturing Company, Ltd
Ka-Hing Fung
H01 - BASIC ELECTRIC ELEMENTS
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Semiconductor device and manufacturing method thereof
Patent number
11,742,207
Issue date
Aug 29, 2023
Taiwan Semiconductor Manufacturing Co., Ltd
Zheng-Long Chen
H01 - BASIC ELECTRIC ELEMENTS
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Mechanism for FinFET well doping
Patent number
11,742,237
Issue date
Aug 29, 2023
Taiwan Semiconductor Manufacturing Company
Chun Hsiung Tsai
H01 - BASIC ELECTRIC ELEMENTS
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Epitaxial structures for fin-like field effect transistors
Patent number
11,735,648
Issue date
Aug 22, 2023
Taiwan Semiconductor Manufacturing Co., Ltd
Chia-Ta Yu
H01 - BASIC ELECTRIC ELEMENTS
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Method and system for fabrication of a vertical fin-based field eff...
Patent number
11,735,671
Issue date
Aug 22, 2023
NEXGEN POWER SYSTEMS, INC.
Clifford Drowley
H01 - BASIC ELECTRIC ELEMENTS
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Interfacial layer between fin and source/drain region
Patent number
11,735,668
Issue date
Aug 22, 2023
Taiwan Semiconductor Manufacturing Company, Ltd
Chih-Yun Chin
H01 - BASIC ELECTRIC ELEMENTS
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Structure and method for FinFET device with buried sige oxide
Patent number
11,735,650
Issue date
Aug 22, 2023
Taiwan Semiconductor Manufacturing Company, Ltd
Kuo-Cheng Ching
H01 - BASIC ELECTRIC ELEMENTS
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Method of manufacturing semiconductor devices
Patent number
11,677,012
Issue date
Jun 13, 2023
Taiwan Semiconductor Manufacturing Company, Ltd
Tsan-Chun Wang
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
PMOS FinFET
Patent number
11,677,028
Issue date
Jun 13, 2023
Taiwan Semiconductor Manufacturing Co., Ltd
Wei-Yang Lee
H01 - BASIC ELECTRIC ELEMENTS
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Diffused tip extension transistor
Patent number
11,664,452
Issue date
May 30, 2023
Intel Corporation
Pratik A. Patel
H01 - BASIC ELECTRIC ELEMENTS
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Backside contact structures and fabrication for metal on both sides...
Patent number
11,658,221
Issue date
May 23, 2023
Intel Corporation
Patrick Morrow
H01 - BASIC ELECTRIC ELEMENTS
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Semiconductor device and method of manufacture
Patent number
11,646,377
Issue date
May 9, 2023
Taiwan Semiconductor Manufacturing Co., Ltd
Wei-Ting Chien
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Manufacturing method of static random access memory cell
Patent number
11,641,729
Issue date
May 2, 2023
Taiwan Semiconductor Manufacturing Co., Ltd
Jordan Hsu
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Non-planar semiconductor device having doped sub-fin region and met...
Patent number
11,631,673
Issue date
Apr 18, 2023
Tahoe Research, LTD.
Tahir Ghani
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Method of making fin field effect transistor (FinFET) device
Patent number
11,616,124
Issue date
Mar 28, 2023
Taiwan Semiconductor Manufacturing Company, Ltd
Jhong-Sheng Wang
H01 - BASIC ELECTRIC ELEMENTS
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Multi-fin FINFET device including epitaxial growth barrier on outsi...
Patent number
11,610,886
Issue date
Mar 21, 2023
Bell Semiconductor, LLC
Qing Liu
H01 - BASIC ELECTRIC ELEMENTS
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last 30 patents
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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...
Publication number
20240096988
Publication date
Mar 21, 2024
INFINEON TECHNOLOGIES AG
Michael Hell
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR
Publication number
20240097010
Publication date
Mar 21, 2024
Taiwan Semiconductor Manufacturing Co., Ltd.
Sai-Hooi Yeong
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
ANTIFUSES USING A FINFET ARCHITECTURE
Publication number
20240063114
Publication date
Feb 22, 2024
Micron Technology, Inc.
Si-Woo Lee
H01 - BASIC ELECTRIC ELEMENTS
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STACKED SEMICONDUCTOR DEVICE
Publication number
20240021733
Publication date
Jan 18, 2024
International Business Machines Corporation
Kangguo Cheng
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
FINFET WITH GATE EXTENSION
Publication number
20240014324
Publication date
Jan 11, 2024
NXP B.V.
Viet Thanh Dinh
H01 - BASIC ELECTRIC ELEMENTS
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SPUTTER TARGETS AND SOURCES FOR SELF-DOPED SOURCE AND DRAIN CONTACTS
Publication number
20230420246
Publication date
Dec 28, 2023
Intel Corporation
Ilya V. Karpov
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Publication number
20230420516
Publication date
Dec 28, 2023
Taiwan Semiconductor Manufacturing Company, Ltd.
Ka-Hing Fung
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
METHOD AND SYSTEM FOR FABRICATION OF A VERTICAL FIN-BASED FIELD EFF...
Publication number
20230411525
Publication date
Dec 21, 2023
NEXGEN POWER SYSTEMS, INC.
Clifford Drowley
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
METHOD FOR IMPROVING PROFILE OF INTERCONNECT STRUCTURE
Publication number
20230411206
Publication date
Dec 21, 2023
Taiwan Semiconductor Manufacturing Company, Ltd.
Chun-Neng LIN
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
EPITAXIAL STRUCTURES FOR FIN-LIKE FIELD EFFECT TRANSISTORS
Publication number
20230387269
Publication date
Nov 30, 2023
Taiwan Semiconductor Manufacturing Co., LTD
Chia-Ta Yu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...
Publication number
20230378359
Publication date
Nov 23, 2023
Taiwan Semiconductor Manufacturing Co., Ltd.
Shahaji B. MORE
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Publication number
20230352305
Publication date
Nov 2, 2023
Taiwan Semiconductor Manufacturing Co., Ltd.
Zheng-Long CHEN
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
BACKSIDE CONTACT STRUCTURES AND FABRICATION FOR METAL ON BOTH SIDES...
Publication number
20230275135
Publication date
Aug 31, 2023
Intel Corporation
Patrick MORROW
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
Semiconductor Device and Method of Manufacture
Publication number
20230268442
Publication date
Aug 24, 2023
Taiwan Semiconductor Manufacturing Co., Ltd.
Wei-Ting Chien
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
DIFFUSED TIP EXTENSION TRANSISTOR
Publication number
20230253499
Publication date
Aug 10, 2023
Intel Corporation
Pratik A. PATEL
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
NON-PLANAR SEMICONDUCTOR DEVICE HAVING DOPED SUB-FIN REGION AND MET...
Publication number
20230223406
Publication date
Jul 13, 2023
Tahoe Research, Ltd.
Tahir GHANI
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
UPPER AND LOWER GATE CONFIGURATIONS OF MONOLITHIC STACKED FINFET TR...
Publication number
20230215949
Publication date
Jul 6, 2023
International Business Machines Corporation
Chen Zhang
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
TRANSISTOR STRUCTURE WITH GATE OVER WELL BOUNDARY AND RELATED METHO...
Publication number
20230215731
Publication date
Jul 6, 2023
GLOBALFOUNDRIES U.S. Inc.
Ketankumar Harishbhai Tailor
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
MULTI-FIN FINFET DEVICE INCLUDING EPITAXIAL GROWTH BARRIER ON OUTSI...
Publication number
20230197720
Publication date
Jun 22, 2023
Bell Semiconductor, LLC
Qing LIU
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...
Publication number
20230187447
Publication date
Jun 15, 2023
Taiwan Semiconductor Manufacturing Company, Ltd.
Yu-Chang LIN
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN MULTI-LAYER STRUCTURE AND...
Publication number
20230109135
Publication date
Apr 6, 2023
Taiwan Semiconductor Manufacturing Company, Ltd.
Chun-Chieh WANG
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
VERTICAL FET WITH CONTACT TO GATE ABOVE ACTIVE FIN
Publication number
20230104456
Publication date
Apr 6, 2023
International Business Machines Corporation
Brent ANDERSON
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
SEMICONDUCTOR DEVICE HAVING FINS AND METHOD OF FABRICATING THE SAME
Publication number
20230089130
Publication date
Mar 23, 2023
Taiwan Semiconductor Manufacturing Co., Ltd.
Shu-Hao KUO
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
Publication number
20230031720
Publication date
Feb 2, 2023
ASM INTERNATIONAL N.V.
Noboru Takamure
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
Structure and Method for FinFET Device with Buried Sige Oxide
Publication number
20230010954
Publication date
Jan 12, 2023
Taiwan Semiconductor Manufacturing Company, Ltd.
Kuo-Cheng Chiang
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
UNIFORM IMPLANT REGIONS IN A SEMICONDUCTOR RIDGE OF A FINFET
Publication number
20220393021
Publication date
Dec 8, 2022
TEXAS INSTRUMENTS INCORPORATED
Ming-Yeh Chuang
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
Conformal Transfer Doping Method for Fin-Like Field Effect Transistor
Publication number
20220376090
Publication date
Nov 24, 2022
Taiwan Semiconductor Manufacturing Co., Ltd.
Sai-Hooi Yeong
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
Semiconductor Device and Method of Manufacture
Publication number
20220367717
Publication date
Nov 17, 2022
Taiwan Semiconductor Manufacturing Co., Ltd.
Li-Li Su
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
FINFET STRUCTURE AND METHOD FOR MANUFACTURING THEREOF
Publication number
20220367635
Publication date
Nov 17, 2022
Taiwan Semiconductor Manufacturing company Ltd.
CHUN HSIUNG TSAI
H01 - BASIC ELECTRIC ELEMENTS
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Patent Application
METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS
Publication number
20220367715
Publication date
Nov 17, 2022
Taiwan Semiconductor Manufacturing Co., Ltd.
Shahaji B. MORE
H01 - BASIC ELECTRIC ELEMENTS