With a step of forming an insulating sidewall spacer

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H01L29/66719

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66719With a step of forming an insulating sidewall spacer

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method for auto-aligned manufacturing of a VDMOS transistor, and au...
- Patent number 12,243,922
- Issue date Mar 4, 2025
- STMicroelectronics S.r.l.
- Vincenzo Enea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance contact feature
- Patent number 12,237,390
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Szu-Wei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with distributed doped P-shield zones under trenches
- Patent number 12,057,482
- Issue date Aug 6, 2024
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor power device
- Patent number 12,015,078
- Issue date Jun 18, 2024
- SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
- Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including gate spacer
- Patent number 11,810,964
- Issue date Nov 7, 2023
- Samsung Electronics Co., Ltd.
- Bongseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for auto-aligned manufacturing of a VDMOS transistor, and au...
- Patent number 11,705,493
- Issue date Jul 18, 2023
- STMicroelectronics S.r.l.
- Vincenzo Enea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an alignment layer with mask pits
- Patent number 11,699,725
- Issue date Jul 11, 2023
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing a MOSFET
- Patent number 11,545,561
- Issue date Jan 3, 2023
- Infineon Technologies Austria AG
- Andreas Riegler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical fin field effect transistor with a reduced gate-to-bottom...
- Patent number 11,515,401
- Issue date Nov 29, 2022
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical fin field effect transistor with a reduced gate-to-bottom...
- Patent number 11,495,673
- Issue date Nov 8, 2022
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer structure with high plasma resistance for semiconductor devices
- Patent number 11,329,141
- Issue date May 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having vertical transistors and method of form...
- Patent number 11,257,823
- Issue date Feb 22, 2022
- Imec VZW
- Juergen Boemmels
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method of fabricating the same
- Patent number 11,145,511
- Issue date Oct 12, 2021
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Xue Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device and manufacturing method thereof
- Patent number 11,049,958
- Issue date Jun 29, 2021
- SUPER GROUP SEMICONDUCTOR CO., LTD.
- Sung-Nien Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for auto-aligned manufacturing of a VDMOS transistor, and au...
- Patent number 11,038,032
- Issue date Jun 15, 2021
- STMicroelectronics S.r.l.
- Vincenzo Enea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having body contacts with dielectric spacers a...
- Patent number 11,031,478
- Issue date Jun 8, 2021
- Infineon Technologies Austria AG
- Wei-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Latch-up resistant transistor device
- Patent number 10,943,987
- Issue date Mar 9, 2021
- Infineon Technologies Austria AG
- Katarzyna Kowalik-Seidl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET with self-aligned body contact with spacer
- Patent number 10,930,591
- Issue date Feb 23, 2021
- Vishay SIliconix, LLC
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing a MOSFET
- Patent number 10,903,341
- Issue date Jan 26, 2021
- Infineon Technologies Austria AG
- Andreas Riegler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET with self-aligned body contact with spacer
- Patent number 10,903,163
- Issue date Jan 26, 2021
- Vishay SIliconix, LLC
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing a semiconductor de...
- Patent number 10,903,321
- Issue date Jan 26, 2021
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and assembly for mitigating short channel effects in silicon...
- Patent number 10,811,494
- Issue date Oct 20, 2020
- Microsemi Corporation
- Dumitru Gheorge Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Medium high voltage MOSFET device
- Patent number 10,811,533
- Issue date Oct 20, 2020
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer structure with high plasma resistance for semiconductor devices
- Patent number 10,804,374
- Issue date Oct 13, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for auto-aligned manufacturing of a VDMOS transistor, and au...
- Patent number 10,770,558
- Issue date Sep 8, 2020
- STMicroelectronics S.r.l.
- Vincenzo Enea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench power transistor and method of producing the same
- Patent number 10,749,006
- Issue date Aug 18, 2020
- LEADPOWER-SEMI CO., LTD.
- Po-Hsien Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor with extended drain region
- Patent number 10,749,023
- Issue date Aug 18, 2020
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with trench gate structure including a gate el...
- Patent number 10,734,514
- Issue date Aug 4, 2020
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device VDMOS having a gate insulating film having a h...
- Patent number 10,727,318
- Issue date Jul 28, 2020
- Rohm Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device
- Patent number 10,679,983
- Issue date Jun 9, 2020
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER SEMICONDUCTOR DEVICE AND ASSOCIATED METHODS
- Publication number 20250072085
- Publication date Feb 27, 2025
- NEXPERIA B.V.
- Chih-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND CORRESPONDING METHODS OF MANUFACTURE
- Publication number 20240194754
- Publication date Jun 13, 2024
- Infineon Technologies Austria AG
- Weichun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A PROTRUSION PROJECTION FORMED UNDER A...
- Publication number 20240170558
- Publication date May 23, 2024
- Rohm Co., Ltd.
- Keiji OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR AUTO-ALIGNED MANUFACTURING OF A VDMOS TRANSISTOR, AND AU...
- Publication number 20240030300
- Publication date Jan 25, 2024
- STMicroelectronics S.r.l.
- Vincenzo ENEA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240006486
- Publication date Jan 4, 2024
- HON HAI PRECISION INDUSTRY CO., LTD.
- Yi-Kai HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF FORMING SILICON CARBIDE MOSFET
- Publication number 20230261085
- Publication date Aug 17, 2023
- PANJIT INTERNATIONAL INC.
- SEUNGCHUL LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF FORMING SILICON CARBIDE MOSFET
- Publication number 20230261086
- Publication date Aug 17, 2023
- PANJIT INTERNATIONAL INC.
- SEUNGCHUL LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE CONTACT FEATURE
- Publication number 20230207653
- Publication date Jun 29, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Szu-Wei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230111142
- Publication date Apr 13, 2023
- RENESAS ELECTRONICS CORPORATION
- Katsumi EIKYU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220271044
- Publication date Aug 25, 2022
- Samsung Electronics Co., Ltd.
- Seok Hyun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH DISTRIBUTED DOPED P-SHIELD ZONES UNDER TRENCHES
- Publication number 20220052170
- Publication date Feb 17, 2022
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BODY CONTACT REGIONS AND CORRESPONDING...
- Publication number 20210273067
- Publication date Sep 2, 2021
- Wei-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR AUTO-ALIGNED MANUFACTURING OF A VDMOS TRANSISTOR, AND AU...
- Publication number 20210273066
- Publication date Sep 2, 2021
- STMicroelectronics S.r.l.
- Vincenzo ENEA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Manufacturing a MOSFET
- Publication number 20210151584
- Publication date May 20, 2021
- Andreas Riegler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having an Alignment Layer with Mask Pits
- Publication number 20210098580
- Publication date Apr 1, 2021
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spacer Structure with High Plasma Resistance for Semiconductor Devices
- Publication number 20210028293
- Publication date Jan 28, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR AUTO-ALIGNED MANUFACTURING OF A VDMOS TRANSISTOR, AND AU...
- Publication number 20200373397
- Publication date Nov 26, 2020
- STMicroelectronics S.r.l.
- Vincenzo ENEA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A GATE INSULATING FILM HAVING A HIGH DI...
- Publication number 20200321451
- Publication date Oct 8, 2020
- Rohm Co., Ltd.
- Keiji OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR WITH EXTENDED DRAIN REGION
- Publication number 20200135916
- Publication date Apr 30, 2020
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER STRUCTURE WITH HIGH PLASMA RESISTANCE FOR SEMICONDUCTOR DEVICES
- Publication number 20200127112
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIN FIELD EFFECT TRANSISTOR WITH A REDUCED GATE-TO-BOTTOM...
- Publication number 20200091316
- Publication date Mar 19, 2020
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIN FIELD EFFECT TRANSISTOR WITH A REDUCED GATE-TO-BOTTOM...
- Publication number 20200083353
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR AUTO-ALIGNED MANUFACTURING OF A VDMOS TRANSISTOR, AND AU...
- Publication number 20200083337
- Publication date Mar 12, 2020
- STMicroelectronics S.r.l.
- Vincenzo ENEA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200027968
- Publication date Jan 23, 2020
- SUPER GROUP SEMICONDUCTOR CO., LTD.
- SUNG-NIEN TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spacer Structure with High Plasma Resistance for Semiconductor Devices
- Publication number 20200013872
- Publication date Jan 9, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MATERIAL COMBINATIONS FOR POLISH STOPS AND GATE CAPS
- Publication number 20190326416
- Publication date Oct 24, 2019
- GLOBALFOUNDRIES INC.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Latch-Up Resistant Transistor Device
- Publication number 20190319110
- Publication date Oct 17, 2019
- Katarzyna Kowalik-Seidl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET WITH SELF-ALIGNED BODY CONTACT WITH SPACER
- Publication number 20190237403
- Publication date Aug 1, 2019
- Lingpeng GUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIN FIELD EFFECT TRANSISTOR WITH A REDUCED GATE-TO-BOTTOM...
- Publication number 20190198641
- Publication date Jun 27, 2019
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER STRUCTURE WITH HIGH PLASMA RESISTANCE FOR SEMICONDUCTOR DEVICES
- Publication number 20190103475
- Publication date Apr 4, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS

With a step of forming an insulating sidewall spacer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for auto-aligned manufacturing of a VDMOS transistor, and au...

Low resistance contact feature

MOSFET with distributed doped P-shield zones under trenches

Manufacturing method of semiconductor power device

Semiconductor devices including gate spacer

Method for auto-aligned manufacturing of a VDMOS transistor, and au...

Semiconductor device having an alignment layer with mask pits

Methods for manufacturing a MOSFET

Vertical fin field effect transistor with a reduced gate-to-bottom...

Vertical fin field effect transistor with a reduced gate-to-bottom...

Spacer structure with high plasma resistance for semiconductor devices

Semiconductor device having vertical transistors and method of form...

Power semiconductor device and method of fabricating the same

Semiconductor power device and manufacturing method thereof

Method for auto-aligned manufacturing of a VDMOS transistor, and au...

Semiconductor device having body contacts with dielectric spacers a...

Latch-up resistant transistor device

Trench MOSFET with self-aligned body contact with spacer

Methods for manufacturing a MOSFET

Trench MOSFET with self-aligned body contact with spacer

Semiconductor device and method of manufacturing a semiconductor de...

Method and assembly for mitigating short channel effects in silicon...

Medium high voltage MOSFET device

Spacer structure with high plasma resistance for semiconductor devices

Method for auto-aligned manufacturing of a VDMOS transistor, and au...

Trench power transistor and method of producing the same

Vertical transistor with extended drain region

Semiconductor device with trench gate structure including a gate el...

Semiconductor device VDMOS having a gate insulating film having a h...

Method of producing a semiconductor device

Patents Applicationslast 30 patents

POWER SEMICONDUCTOR DEVICE AND ASSOCIATED METHODS

SEMICONDUCTOR DEVICE AND CORRESPONDING METHODS OF MANUFACTURE

SEMICONDUCTOR DEVICE HAVING A PROTRUSION PROJECTION FORMED UNDER A...

METHOD FOR AUTO-ALIGNED MANUFACTURING OF A VDMOS TRANSISTOR, AND AU...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FABRICATION METHOD OF FORMING SILICON CARBIDE MOSFET

FABRICATION METHOD OF FORMING SILICON CARBIDE MOSFET

LOW RESISTANCE CONTACT FEATURE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

MOSFET WITH DISTRIBUTED DOPED P-SHIELD ZONES UNDER TRENCHES

SEMICONDUCTOR DEVICE HAVING BODY CONTACT REGIONS AND CORRESPONDING...

METHOD FOR AUTO-ALIGNED MANUFACTURING OF A VDMOS TRANSISTOR, AND AU...

Methods for Manufacturing a MOSFET

Semiconductor Device Having an Alignment Layer with Mask Pits

Spacer Structure with High Plasma Resistance for Semiconductor Devices

METHOD FOR AUTO-ALIGNED MANUFACTURING OF A VDMOS TRANSISTOR, AND AU...

SEMICONDUCTOR DEVICE HAVING A GATE INSULATING FILM HAVING A HIGH DI...

VERTICAL TRANSISTOR WITH EXTENDED DRAIN REGION

SPACER STRUCTURE WITH HIGH PLASMA RESISTANCE FOR SEMICONDUCTOR DEVICES

VERTICAL FIN FIELD EFFECT TRANSISTOR WITH A REDUCED GATE-TO-BOTTOM...

VERTICAL FIN FIELD EFFECT TRANSISTOR WITH A REDUCED GATE-TO-BOTTOM...

METHOD FOR AUTO-ALIGNED MANUFACTURING OF A VDMOS TRANSISTOR, AND AU...

SEMICONDUCTOR POWER DEVICE AND MANUFACTURING METHOD THEREOF

Spacer Structure with High Plasma Resistance for Semiconductor Devices

MATERIAL COMBINATIONS FOR POLISH STOPS AND GATE CAPS

Latch-Up Resistant Transistor Device

TRENCH MOSFET WITH SELF-ALIGNED BODY CONTACT WITH SPACER

VERTICAL FIN FIELD EFFECT TRANSISTOR WITH A REDUCED GATE-TO-BOTTOM...

SPACER STRUCTURE WITH HIGH PLASMA RESISTANCE FOR SEMICONDUCTOR DEVICES