with a step of recessing the gate electrode

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CPC
H01L29/66734

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66734with a step of recessing the gate electrode

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Trench field effect transistor structure comprising epitaxial layer...
- Patent number 12,166,109
- Issue date Dec 10, 2024
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Xin Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a transistor and a shield electrode
- Patent number 12,166,090
- Issue date Dec 10, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Zia Hossain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,166,069
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zheng-Long Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with equipotential ring electrode
- Patent number 12,159,865
- Issue date Dec 3, 2024
- Rohm Co., Ltd.
- Hiroyuki Kaneda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with semiconductor mesas between adjacent gate...
- Patent number 12,159,933
- Issue date Dec 3, 2024
- Infineon Technologies Austria AG
- Anita Brazzale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 12,154,948
- Issue date Nov 26, 2024
- SK Hynix Inc.
- Seong-Wan Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power device
- Patent number 12,154,944
- Issue date Nov 26, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET device with shielding region and manufacturing method thereof
- Patent number 12,148,824
- Issue date Nov 19, 2024
- STMicroelectronics S.r.l.
- Mario Giuseppe Saggio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having contact trenches extending from opposit...
- Patent number 12,136,670
- Issue date Nov 5, 2024
- Infineon Technologies AG
- Markus Zundel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power device and method of making the same
- Patent number 12,136,647
- Issue date Nov 5, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,125,905
- Issue date Oct 22, 2024
- Renesas Electronics Corporation
- Yoshinori Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device and method of manufacturing the same
- Patent number 12,119,400
- Issue date Oct 15, 2024
- Infineon Technologies Austria AG
- Robert Paul Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including vertical MOSFET and Schottky barrier...
- Patent number 12,119,399
- Issue date Oct 15, 2024
- Fuji Electric Co., Ltd.
- Masakazu Baba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-balance power device, and process for manufacturing the char...
- Patent number 12,113,103
- Issue date Oct 8, 2024
- STMicroelectronics S.r.l.
- Antonello Santangelo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor die with a power device and method of manufacturing t...
- Patent number 12,107,152
- Issue date Oct 1, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 12,094,968
- Issue date Sep 17, 2024
- Kabushiki Kaisha Toshiba
- Hiroaki Katou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having a field plate
- Patent number 12,094,969
- Issue date Sep 17, 2024
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory and method for forming same
- Patent number 12,089,393
- Issue date Sep 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Qu Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench SiC MOSFET integrated with high-speed flyback diode and prep...
- Patent number 12,087,822
- Issue date Sep 10, 2024
- NOVUS SEMICONDUCTORS CO., LTD.
- Hang Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical UMOSFET device with high channel mobility and preparation...
- Patent number 12,087,855
- Issue date Sep 10, 2024
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF S...
- Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 12,080,757
- Issue date Sep 3, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 12,080,792
- Issue date Sep 3, 2024
- Denso Corporation
- Youhei Oda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,080,793
- Issue date Sep 3, 2024
- Rohm Co., Ltd.
- Akihiro Hikasa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for manufacturing a trench power MOSFET
- Patent number 12,062,717
- Issue date Aug 13, 2024
- SK keyfoundry Inc.
- Hyun Kwang Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with distributed doped P-shield zones under trenches
- Patent number 12,057,482
- Issue date Aug 6, 2024
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of a semiconductor device
- Patent number 12,051,745
- Issue date Jul 30, 2024
- SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
- Yi Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,051,747
- Issue date Jul 30, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Michiya Otsuji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,051,743
- Issue date Jul 30, 2024
- Rohm Co., Ltd.
- Masaki Nagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical conduction electronic power device having a reduced on res...
- Patent number 12,046,655
- Issue date Jul 23, 2024
- STMicroelectronics S.r.l.
- Davide Giuseppe Patti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,040,361
- Issue date Jul 16, 2024
- Fuji Electric Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20240413240
- Publication date Dec 12, 2024
- Magnachip Semiconductor, Ltd.
- Jin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240413241
- Publication date Dec 12, 2024
- Kabushiki Kaisha Toshiba
- Hiroaki KATOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURE METHOD OF THEREOF
- Publication number 20240405065
- Publication date Dec 5, 2024
- HON HAI PRECISION INDUSTRY CO., LTD.
- Chia-Lung HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming MEMS Super-Junction Meta...
- Publication number 20240405067
- Publication date Dec 5, 2024
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING GATE TRENCHES AND FIELD PLATE TRENCHES...
- Publication number 20240405120
- Publication date Dec 5, 2024
- Infineon Technologies Austria AG
- Timothy Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming MEMS Super-Junction Meta...
- Publication number 20240405068
- Publication date Dec 5, 2024
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT STRUCTURE FOR A TRENCH POWER MOSFET WITH A SPLIT GATE...
- Publication number 20240405098
- Publication date Dec 5, 2024
- STMicroelectronics International N.V.
- Maurizio Gabriele CASTORINA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE MOSFET AND MANUFACTURING METHOD THEREOF
- Publication number 20240405121
- Publication date Dec 5, 2024
- Mosel Vitelic Inc.
- Chia-Ming Kou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20240395926
- Publication date Nov 28, 2024
- Infineon Technologies Austria AG
- Thomas Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240395928
- Publication date Nov 28, 2024
- HYUNDAI MOBIS CO., LTD.
- Jeong Mok HA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED HYBRID TFET AND MOSFET
- Publication number 20240395814
- Publication date Nov 28, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240395878
- Publication date Nov 28, 2024
- RENESAS ELECTRONICS CORPORATION
- Yuta NABUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND MANUFACTURIING METHOD
- Publication number 20240379756
- Publication date Nov 14, 2024
- Hitachi Energy Ltd
- Wolfgang Amadeus VITALE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240379839
- Publication date Nov 14, 2024
- ROHM CO., LTD.
- Akihiro HIKASA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MOSFET USING A SILICON CARBIDE LAYER AND A SILICON LAYER F...
- Publication number 20240379838
- Publication date Nov 14, 2024
- MaxPower Semiconductor, Inc.
- Mohamed Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240371929
- Publication date Nov 7, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240371993
- Publication date Nov 7, 2024
- Fuji Electric Co., Ltd.
- Takeyoshi Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER SEMICONDUCTOR DEVICE HAVING AN INTERLAYER DIELECTRIC...
- Publication number 20240371772
- Publication date Nov 7, 2024
- INFINEON TECHNOLOGIES AG
- Saurabh Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming of Slope Liners in Trench Based Semiconductor Devices
- Publication number 20240363728
- Publication date Oct 31, 2024
- NEXPERIA B.V.
- Fan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240339419
- Publication date Oct 10, 2024
- Sumitomo Electric Industries, Ltd.
- Shota SAMBONSUGE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240332415
- Publication date Oct 3, 2024
- Kabushiki Kaisha Toshiba
- Tsutomu KIYOSAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SUPERJUNCTION TRENCH GATE MOSFET
- Publication number 20240332402
- Publication date Oct 3, 2024
- Hua Hong Semiconductor (Wuxi) Limited
- Zhaozhao XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING TH...
- Publication number 20240332363
- Publication date Oct 3, 2024
- Fuji Electric Co., Ltd.
- Naoyuki OHSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240322034
- Publication date Sep 26, 2024
- ROHM CO., LTD.
- Keita AOYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240322035
- Publication date Sep 26, 2024
- ROHM CO., LTD.
- Shimpei OHNISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET AND MANUFACTURING METHOD THEREOF
- Publication number 20240322032
- Publication date Sep 26, 2024
- United Microelectronics Corp.
- Yu-Hsiang Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERJUNCTION TRANSISTOR DEVICE
- Publication number 20240321953
- Publication date Sep 26, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20240313057
- Publication date Sep 19, 2024
- Hitachi, Ltd
- Tomoka SUEMATSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240313106
- Publication date Sep 19, 2024
- Kabushiki Kaisha Toshiba
- Kouta TOMITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20240313111
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- YI-HUAN CHEN
- H01 - BASIC ELECTRIC ELEMENTS

with a step of recessing the gate electrode

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Trench field effect transistor structure comprising epitaxial layer...

Electronic device including a transistor and a shield electrode

Semiconductor device and manufacturing method thereof

Semiconductor device with equipotential ring electrode

Semiconductor device with semiconductor mesas between adjacent gate...

Semiconductor device having buried gate structure and method for fa...

Super junction power device

MOSFET device with shielding region and manufacturing method thereof

Semiconductor device having contact trenches extending from opposit...

Super junction power device and method of making the same

Semiconductor device

Semiconductor transistor device and method of manufacturing the same

Semiconductor device including vertical MOSFET and Schottky barrier...

Charge-balance power device, and process for manufacturing the char...

Semiconductor die with a power device and method of manufacturing t...

Semiconductor device and method for manufacturing same

Transistor device having a field plate

Memory and method for forming same

Trench SiC MOSFET integrated with high-speed flyback diode and prep...

Vertical UMOSFET device with high channel mobility and preparation...

Method of fabricating super-junction based vertical gallium nitride...

Semiconductor device and method for manufacturing same

Semiconductor device

Structure and method for manufacturing a trench power MOSFET

MOSFET with distributed doped P-shield zones under trenches

Manufacturing method of a semiconductor device

Semiconductor device

Semiconductor device

Vertical conduction electronic power device having a reduced on res...

Semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND MANUFACTURE METHOD OF THEREOF

Semiconductor Device and Method of Forming MEMS Super-Junction Meta...

SEMICONDUCTOR DEVICE HAVING GATE TRENCHES AND FIELD PLATE TRENCHES...

Semiconductor Device and Method of Forming MEMS Super-Junction Meta...

GATE CONTACT STRUCTURE FOR A TRENCH POWER MOSFET WITH A SPLIT GATE...

SPLIT GATE MOSFET AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

STACKED HYBRID TFET AND MOSFET

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

POWER SEMICONDUCTOR DEVICE AND MANUFACTURIING METHOD

SEMICONDUCTOR DEVICE

VERTICAL MOSFET USING A SILICON CARBIDE LAYER AND A SILICON LAYER F...

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

VERTICAL POWER SEMICONDUCTOR DEVICE HAVING AN INTERLAYER DIELECTRIC...

Forming of Slope Liners in Trench Based Semiconductor Devices

SILICON CARBIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR MANUFACTURING SUPERJUNCTION TRENCH GATE MOSFET

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING TH...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE

POWER MOSFET AND MANUFACTURING METHOD THEREOF

SUPERJUNCTION TRANSISTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME