with a step of recessing the gate electrode

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CPC
H01L29/66734

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66734with a step of recessing the gate electrode

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device and method for fabricating the same
- Patent number 12,249,620
- Issue date Mar 11, 2025
- Hyundai Motor Company
- Jong Seok Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method for manufacturing field-effect t...
- Patent number 12,249,633
- Issue date Mar 11, 2025
- Will Semiconductor (Shanghai) Co. Ltd.
- Nobuyuki Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for auto-aligned manufacturing of a VDMOS transistor, and au...
- Patent number 12,243,922
- Issue date Mar 4, 2025
- STMicroelectronics S.r.l.
- Vincenzo Enea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display driver semiconductor device and method for manufacturing th...
- Patent number 12,237,337
- Issue date Feb 25, 2025
- SK keyfoundry Inc.
- Boseok Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having a cell field and method of fabricating a g...
- Patent number 12,230,706
- Issue date Feb 18, 2025
- Infineon Technologies Austria AG
- Ingmar Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,224,341
- Issue date Feb 11, 2025
- Hyundai Motor Company
- NackYong Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 12,224,320
- Issue date Feb 11, 2025
- Fuji Electric Co., Ltd.
- Yoshihito Ichikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact structure for a trench power MOSFET with a split gate...
- Patent number 12,224,342
- Issue date Feb 11, 2025
- STMicroelectronics Pte Ltd
- Yean Ching Yong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,218,234
- Issue date Feb 4, 2025
- Rohm Co., Ltd.
- Kengo Omori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved breakdown voltage
- Patent number 12,211,932
- Issue date Jan 28, 2025
- Renesas Electronics Corporation
- Machiko Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability and low gate...
- Patent number 12,199,146
- Issue date Jan 14, 2025
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and manufacturiing method
- Patent number 12,199,144
- Issue date Jan 14, 2025
- HITACHI ENERGY LTD
- Wolfgang Amadeus Vitale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming buried field plate st...
- Patent number 12,199,154
- Issue date Jan 14, 2025
- Powerchip Semiconductor Manufacturing Corporation
- Chia-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method of fabricating the same
- Patent number 12,191,386
- Issue date Jan 7, 2025
- Hyundai Mobis Co., Ltd.
- Jeong Mok Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for fabricating charge balanced (CB) trench-metal-oxide-...
- Patent number 12,191,384
- Issue date Jan 7, 2025
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a current spreading region
- Patent number 12,191,385
- Issue date Jan 7, 2025
- Infineon Technologies Austria AG
- Adrian Finney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,183,663
- Issue date Dec 31, 2024
- Rohm Co., Ltd.
- Kazuki Okuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Notch shape of trench gate bottom corner for better breakdown volta...
- Patent number 12,183,795
- Issue date Dec 31, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Conghui Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device that includes at least four semiconductor regions
- Patent number 12,176,418
- Issue date Dec 24, 2024
- Kabushiki Kaisha Toshiba
- Hiroki Nemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-type MOSFET and method for manufacturing the same
- Patent number 12,176,432
- Issue date Dec 24, 2024
- HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Bing Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench field effect transistor structure comprising epitaxial layer...
- Patent number 12,166,109
- Issue date Dec 10, 2024
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Xin Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a transistor and a shield electrode
- Patent number 12,166,090
- Issue date Dec 10, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Zia Hossain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,166,069
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zheng-Long Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with equipotential ring electrode
- Patent number 12,159,865
- Issue date Dec 3, 2024
- Rohm Co., Ltd.
- Hiroyuki Kaneda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with semiconductor mesas between adjacent gate...
- Patent number 12,159,933
- Issue date Dec 3, 2024
- Infineon Technologies Austria AG
- Anita Brazzale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 12,154,948
- Issue date Nov 26, 2024
- SK Hynix Inc.
- Seong-Wan Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power device
- Patent number 12,154,944
- Issue date Nov 26, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET device with shielding region and manufacturing method thereof
- Patent number 12,148,824
- Issue date Nov 19, 2024
- STMicroelectronics S.r.l.
- Mario Giuseppe Saggio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having contact trenches extending from opposit...
- Patent number 12,136,670
- Issue date Nov 5, 2024
- Infineon Technologies AG
- Markus Zundel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power device and method of making the same
- Patent number 12,136,647
- Issue date Nov 5, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of Manufacturing MOSFETs
- Publication number 20250072029
- Publication date Feb 27, 2025
- NEXPERIA B.V.
- Deepak Chandra Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...
- Publication number 20250072046
- Publication date Feb 27, 2025
- Mitsubishi Electric Corporation
- Tetsuo TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOSFET and manufacturing method thereof
- Publication number 20250072047
- Publication date Feb 27, 2025
- Hangzhou Silicon-Magic Semiconductor Technology Co.,Ltd
- Yanggang OU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES HAVING GATE TRENCHES WITH ASYMMETRICALL...
- Publication number 20250072044
- Publication date Feb 27, 2025
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW THRESHOLD HIGH DENSITY TRENCH MOSFET
- Publication number 20250072045
- Publication date Feb 27, 2025
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Sik Lui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250069997
- Publication date Feb 27, 2025
- ROHM CO., LTD.
- Kazuki OKUYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wide Bandgap Trench Gate Semiconductor Device with Buried Gate
- Publication number 20250063800
- Publication date Feb 20, 2025
- Wolfspeed, Inc.
- Thomas Edgar Harrington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063794
- Publication date Feb 20, 2025
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE AND METHOD
- Publication number 20250056846
- Publication date Feb 13, 2025
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET BY MEANS OF LITHOGRAPHY MASKS,...
- Publication number 20250056830
- Publication date Feb 13, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250056836
- Publication date Feb 13, 2025
- Mitsubishi Electric Corporation
- Yuichi NAGAHISA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET
- Publication number 20250048670
- Publication date Feb 6, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET
- Publication number 20250048674
- Publication date Feb 6, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20250040205
- Publication date Jan 30, 2025
- DENSO CORPORATION
- HIDEFUMI TAKAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR CO...
- Publication number 20250031409
- Publication date Jan 23, 2025
- ROBERT BOSCH GmbH
- Alberto Martinez-Limia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250022951
- Publication date Jan 16, 2025
- Kabushiki Kaisha Toshiba
- Kentaro ICHINOSEKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250015138
- Publication date Jan 9, 2025
- RENESAS ELECTRONICS CORPORATION
- Atsushi SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250015147
- Publication date Jan 9, 2025
- RENESAS ELECTRONICS CORPORATION
- Yuto OMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015151
- Publication date Jan 9, 2025
- ROHM CO., LTD.
- Masaki NAGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE
- Publication number 20250015148
- Publication date Jan 9, 2025
- INFINEON TECHNOLOGIES AG
- Thomas AICHINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015175
- Publication date Jan 9, 2025
- RENESAS ELECTRONICS CORPORATION
- Yoshinori KAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20250006834
- Publication date Jan 2, 2025
- Vanguard International Semiconductor Corporation
- Wen-Shan LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240429315
- Publication date Dec 26, 2024
- Vanguard International Semiconductor Corporation
- Wen-Shan LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE WITH A VERTICAL TRANSISTOR DEVICE
- Publication number 20240429289
- Publication date Dec 26, 2024
- Infineon Technologies Austria AG
- Alessandro Ferrara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE-BALANCE POWER DEVICE, AND PROCESS FOR MANUFACTURING THE CHAR...
- Publication number 20240429273
- Publication date Dec 26, 2024
- STMicroelectronics S.r.l.
- Antonello SANTANGELO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20240413240
- Publication date Dec 12, 2024
- Magnachip Semiconductor, Ltd.
- Jin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240413241
- Publication date Dec 12, 2024
- Kabushiki Kaisha Toshiba
- Hiroaki KATOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURE METHOD OF THEREOF
- Publication number 20240405065
- Publication date Dec 5, 2024
- HON HAI PRECISION INDUSTRY CO., LTD.
- Chia-Lung HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming MEMS Super-Junction Meta...
- Publication number 20240405067
- Publication date Dec 5, 2024
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING GATE TRENCHES AND FIELD PLATE TRENCHES...
- Publication number 20240405120
- Publication date Dec 5, 2024
- Infineon Technologies Austria AG
- Timothy Henson
- H01 - BASIC ELECTRIC ELEMENTS

with a step of recessing the gate electrode

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Power semiconductor device and method for fabricating the same

Field-effect transistor and method for manufacturing field-effect t...

Method for auto-aligned manufacturing of a VDMOS transistor, and au...

Display driver semiconductor device and method for manufacturing th...

Transistor device having a cell field and method of fabricating a g...

Semiconductor device and method of manufacturing the same

Silicon carbide semiconductor device and method of manufacturing si...

Gate contact structure for a trench power MOSFET with a split gate...

Semiconductor device and method of manufacturing the same

Semiconductor device with improved breakdown voltage

Power semiconductor device with dV/dt controllability and low gate...

Power semiconductor device and manufacturiing method

Semiconductor structure and method of forming buried field plate st...

Power semiconductor device and method of fabricating the same

Techniques for fabricating charge balanced (CB) trench-metal-oxide-...

Semiconductor device having a current spreading region

Semiconductor device

Notch shape of trench gate bottom corner for better breakdown volta...

Semiconductor device that includes at least four semiconductor regions

Trench-type MOSFET and method for manufacturing the same

Trench field effect transistor structure comprising epitaxial layer...

Electronic device including a transistor and a shield electrode

Semiconductor device and manufacturing method thereof

Semiconductor device with equipotential ring electrode

Semiconductor device with semiconductor mesas between adjacent gate...

Semiconductor device having buried gate structure and method for fa...

Super junction power device

MOSFET device with shielding region and manufacturing method thereof

Semiconductor device having contact trenches extending from opposit...

Super junction power device and method of making the same

Patents Applicationslast 30 patents

Method of Manufacturing MOSFETs

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...

Trench MOSFET and manufacturing method thereof

POWER SEMICONDUCTOR DEVICES HAVING GATE TRENCHES WITH ASYMMETRICALL...

LOW THRESHOLD HIGH DENSITY TRENCH MOSFET

SEMICONDUCTOR DEVICE

Wide Bandgap Trench Gate Semiconductor Device with Buried Gate

SEMICONDUCTOR DEVICE

TRANSISTOR DEVICE AND METHOD

METHOD FOR PRODUCING A POWER FINFET BY MEANS OF LITHOGRAPHY MASKS,...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET

METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR CO...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

TRANSISTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DIE WITH A VERTICAL TRANSISTOR DEVICE

CHARGE-BALANCE POWER DEVICE, AND PROCESS FOR MANUFACTURING THE CHAR...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND MANUFACTURE METHOD OF THEREOF

Semiconductor Device and Method of Forming MEMS Super-Junction Meta...

SEMICONDUCTOR DEVICE HAVING GATE TRENCHES AND FIELD PLATE TRENCHES...