with a step of recessing the gate electrode

Industry

CPC
H01L29/66734

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66734with a step of recessing the gate electrode

Industries

Patents Grantslast 30 patents

Information Patent Grant
Metal-oxide-semiconductor field-effect transistor having enhanced h...
- Patent number 11,967,625
- Issue date Apr 23, 2024
- SHANGHAI BRIGHT POWER SEMICONDUCTOR CO., LTD.
- Shuming Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method of fabricating the same
- Patent number 11,961,903
- Issue date Apr 16, 2024
- Hyundai Mobis Co., Ltd.
- Jeong Mok Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trench gate structure and buried shi...
- Patent number 11,961,904
- Issue date Apr 16, 2024
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,961,883
- Issue date Apr 16, 2024
- Rohm Co. Ltd.
- Jun Takaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor die and method of manufacturing the same
- Patent number 11,949,009
- Issue date Apr 2, 2024
- Infineon Technologies Austria AG
- Stanislav Vitanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 11,929,403
- Issue date Mar 12, 2024
- Kabushiki Kaisha Toshiba
- Masaharu Shimabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 11,923,416
- Issue date Mar 5, 2024
- SK Hynix Inc.
- Seong-Wan Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating shield gate MOSFET
- Patent number 11,916,141
- Issue date Feb 27, 2024
- Powerchip Semiconductor Manufacturing Corporation
- Hung-I Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field plate anchoring structure for trench-based semiconductor devices
- Patent number 11,908,928
- Issue date Feb 20, 2024
- Infineon Technologies Austria AG
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral transistors and methods with low-voltage-drop shunt to body...
- Patent number 11,888,047
- Issue date Jan 30, 2024
- MaxPower Semiconductor, Inc.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,876,132
- Issue date Jan 16, 2024
- Kabushiki Kaisha Toshiba
- Toshifumi Nishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom source trench MOSFET with shield electrode
- Patent number 11,869,967
- Issue date Jan 9, 2024
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Sik Lui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method for fabricating nitride sem...
- Patent number 11,862,687
- Issue date Jan 2, 2024
- Fuji Electric Co., Ltd.
- Ryo Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate power MOSFET and split gate power MOSFET manufacturing m...
- Patent number 11,862,695
- Issue date Jan 2, 2024
- KEY FOUNDRY CO., LTD.
- Hyunkwang Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,862,698
- Issue date Jan 2, 2024
- Kabushiki Kaisha Toshiba
- Saya Shimomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of a semiconductor device with efficient edge...
- Patent number 11,854,809
- Issue date Dec 26, 2023
- STMicroelectronics S.r.l.
- Edoardo Zanetti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a power semiconductor device having source...
- Patent number 11,855,184
- Issue date Dec 26, 2023
- MagnaChip Semiconductor, Ltd.
- Soo Chang Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate trench power MOSFET with self-aligned poly-to-poly isola...
- Patent number 11,848,378
- Issue date Dec 19, 2023
- STMicroelectronics Pte Ltd
- Ditto Adnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated MOS transistor with selective disabling of cells thereof
- Patent number 11,843,369
- Issue date Dec 12, 2023
- STMicroelectronics S.r.l.
- Davide Giuseppe Patti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing MOSFET having a semiconductor base substrat...
- Patent number 11,843,048
- Issue date Dec 12, 2023
- Shindengen Electric Manufacturing Co., Ltd.
- Daisuke Arai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices having gate trenches and buried edge te...
- Patent number 11,837,629
- Issue date Dec 5, 2023
- Wolfspeed, Inc.
- Daniel J. Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for reducing switching loss and manufacturing...
- Patent number 11,837,630
- Issue date Dec 5, 2023
- WUXI NCE POWER CO., LTD
- Yuanzheng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate trench power semiconductor devices having improved deep shield...
- Patent number 11,837,657
- Issue date Dec 5, 2023
- Wolfspeed, Inc.
- Naeem Islam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF SiC MOSFET with recessed gate dielectric
- Patent number 11,830,943
- Issue date Nov 28, 2023
- Analog Power Conversion LLC
- Dumitru Gheorge Sdrulla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 11,824,086
- Issue date Nov 21, 2023
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,824,112
- Issue date Nov 21, 2023
- Kabushiki Kaisha Toshiba
- Toshifumi Nishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having a field plate in an elongate active trench
- Patent number 11,824,114
- Issue date Nov 21, 2023
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manafacturing method for power MOSFET semiconductor device with imp...
- Patent number 11,824,113
- Issue date Nov 21, 2023
- Renesas Electronics Corporation
- Machiko Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated trench gates with dopants implanted through gate oxide
- Patent number 11,824,092
- Issue date Nov 21, 2023
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,817,487
- Issue date Nov 14, 2023
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Trench Type Silicon Carbide MOSFET Structure and Preparation Method...
- Publication number 20240145548
- Publication date May 2, 2024
- Guangzhou ANHI Semiconductor Co., Ltd.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER SEMICONDUCTOR DEVICE INCLUDING A SILICON CARBIDE (SI...
- Publication number 20240145588
- Publication date May 2, 2024
- INFINEON TECHNOLOGIES AG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC MOSFET POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20240136404
- Publication date Apr 25, 2024
- DB HiTek Co., Ltd.
- Hee Bae LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240136410
- Publication date Apr 25, 2024
- RENESAS ELECTRONICS CORPORATION
- Yu NAGAHAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION
- Publication number 20240136435
- Publication date Apr 25, 2024
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR COMPONENT AND METHOD FOR GENERATING AN ABRUP...
- Publication number 20240136236
- Publication date Apr 25, 2024
- ROBERT BOSCH GmbH
- Christian Huber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE TRENCH DEVICE
- Publication number 20240128344
- Publication date Apr 18, 2024
- EXCELLIANCE MOS CORPORATION
- Chu-Kuang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING TRENCH MOSFET
- Publication number 20240128370
- Publication date Apr 18, 2024
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jinyong Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A VERTICAL FIELD EFFECT TRANSISTOR STRUCTU...
- Publication number 20240128372
- Publication date Apr 18, 2024
- ROBERT BOSCH GmbH
- Christian Huber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SPLIT GATE TRENCH DEVICE
- Publication number 20240128343
- Publication date Apr 18, 2024
- EXCELLIANCE MOS CORPORATION
- Chu-Kuang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240128371
- Publication date Apr 18, 2024
- DENSO CORPORATION
- YUICHI MORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240113218
- Publication date Apr 4, 2024
- RENESAS ELECTRONICS CORPORATION
- Tomoya NISHIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240105767
- Publication date Mar 28, 2024
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240105784
- Publication date Mar 28, 2024
- Infineon Technologies Austria AG
- Thomas Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE FABRICATION METHOD OF AN U-METAL-OXIDE-SEMICONDUCTOR FIELD-EFF...
- Publication number 20240105816
- Publication date Mar 28, 2024
- National Yang Ming Chiao Tung University
- Bing-Yue Tsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240096974
- Publication date Mar 21, 2024
- Kabushiki Kaisha Toshiba
- Takuya YASUTAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240097021
- Publication date Mar 21, 2024
- Kabushiki Kaisha Toshiba
- Takako MOTAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240097022
- Publication date Mar 21, 2024
- Kabushiki Kaisha Toshiba
- Kentaro ICHINOSEKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240097023
- Publication date Mar 21, 2024
- Kabushiki Kaisha Toshiba
- Yuhki FUJINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240097024
- Publication date Mar 21, 2024
- Kabushiki Kaisha Toshiba
- Saya SHIMOMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240087996
- Publication date Mar 14, 2024
- ROHM CO., LTD.
- Kazuki OKUYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE POWER MOSFET AND SPLIT GATE POWER MOSFET MANUFACTURING M...
- Publication number 20240088247
- Publication date Mar 14, 2024
- KEY FOUNDRY CO., LTD.
- Hyunkwang SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE TERMINATION STRUCTURES AND METHODS OF MANUFACT...
- Publication number 20240088237
- Publication date Mar 14, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Balaji PADMANABHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION MOS DEVICE WITH INTEGRATED TMBS STRUCTURE AND MANUFA...
- Publication number 20240079445
- Publication date Mar 7, 2024
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL JUNCTION FIELD EFFECT TRANSISTOR INCLUDING A PLURALITY OF...
- Publication number 20240079503
- Publication date Mar 7, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240079458
- Publication date Mar 7, 2024
- RENESAS ELECTRONICS CORPORATION
- Tomoki AYANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...
- Publication number 20240072122
- Publication date Feb 29, 2024
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SILICIDE GATE FOR DISCRETE SHIELDED-GATE TRENCH POWER...
- Publication number 20240063305
- Publication date Feb 22, 2024
- Analog Devices, Inc.
- Zhenyin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...
- Publication number 20240055514
- Publication date Feb 15, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...
- Publication number 20240055513
- Publication date Feb 15, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS

with a step of recessing the gate electrode

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Metal-oxide-semiconductor field-effect transistor having enhanced h...

Power semiconductor device and method of fabricating the same

Semiconductor device including trench gate structure and buried shi...

Semiconductor device

Semiconductor die and method of manufacturing the same

Method of manufacturing semiconductor device

Semiconductor device having buried gate structure and method for fa...

Method for fabricating shield gate MOSFET

Field plate anchoring structure for trench-based semiconductor devices

Lateral transistors and methods with low-voltage-drop shunt to body...

Semiconductor device

Bottom source trench MOSFET with shield electrode

Nitride semiconductor device and method for fabricating nitride sem...

Split gate power MOSFET and split gate power MOSFET manufacturing m...

Semiconductor device and method of manufacturing semiconductor device

Manufacturing method of a semiconductor device with efficient edge...

Method of manufacturing a power semiconductor device having source...

Split-gate trench power MOSFET with self-aligned poly-to-poly isola...

Integrated MOS transistor with selective disabling of cells thereof

Method of manufacturing MOSFET having a semiconductor base substrat...

Power semiconductor devices having gate trenches and buried edge te...

Semiconductor device for reducing switching loss and manufacturing...

Gate trench power semiconductor devices having improved deep shield...

RF SiC MOSFET with recessed gate dielectric

Method of fabricating super-junction based vertical gallium nitride...

Semiconductor device

Transistor device having a field plate in an elongate active trench

Manafacturing method for power MOSFET semiconductor device with imp...

Insulated trench gates with dopants implanted through gate oxide

Semiconductor device and method for manufacturing the same

Patents Applicationslast 30 patents

Trench Type Silicon Carbide MOSFET Structure and Preparation Method...

VERTICAL POWER SEMICONDUCTOR DEVICE INCLUDING A SILICON CARBIDE (SI...

SiC MOSFET POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION

VERTICAL SEMICONDUCTOR COMPONENT AND METHOD FOR GENERATING AN ABRUP...

SPLIT GATE TRENCH DEVICE

METHOD FOR MANUFACTURING TRENCH MOSFET

METHOD FOR MANUFACTURING A VERTICAL FIELD EFFECT TRANSISTOR STRUCTU...

MANUFACTURING METHOD OF SPLIT GATE TRENCH DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

SEMICONDUCTOR DEVICE AND METHOD

GATE FABRICATION METHOD OF AN U-METAL-OXIDE-SEMICONDUCTOR FIELD-EFF...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SPLIT GATE POWER MOSFET AND SPLIT GATE POWER MOSFET MANUFACTURING M...

SEMICONDUCTOR DEVICE TERMINATION STRUCTURES AND METHODS OF MANUFACT...

SUPER-JUNCTION MOS DEVICE WITH INTEGRATED TMBS STRUCTURE AND MANUFA...

VERTICAL JUNCTION FIELD EFFECT TRANSISTOR INCLUDING A PLURALITY OF...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...

SELF-ALIGNED SILICIDE GATE FOR DISCRETE SHIELDED-GATE TRENCH POWER...

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...