with a substrate comprising an insulating layer

Industry

CPC
H01L29/7824

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7824with a substrate comprising an insulating layer

Industries

Patents Grantslast 30 patents

Information Patent Grant
Strained transistor with conductive plate
- Patent number 12,166,108
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chan-Yu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Connection arrangements for integrated lateral diffusion field effe...
- Patent number 12,159,815
- Issue date Dec 3, 2024
- Silanna Pte Ltd
- Shanghui Larry Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,142,679
- Issue date Nov 12, 2024
- Renesas Electronics Corporation
- Makoto Koshimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with lateral transistor
- Patent number 12,125,906
- Issue date Oct 22, 2024
- Denso Corporation
- Shinichiro Yanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage diode on SOI substrate with trench-modified current path
- Patent number 12,125,923
- Issue date Oct 22, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Jaroslav Pjencak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment using adaptively biased shield plate
- Patent number 12,100,740
- Issue date Sep 24, 2024
- Silanna Asia Pte Ltd
- Stuart B. Molin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of high voltage semiconductor device
- Patent number 12,080,794
- Issue date Sep 3, 2024
- United Microelectronics Corp.
- Tsung-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator metal-oxide-semiconductor field-effect transis...
- Patent number 12,057,502
- Issue date Aug 6, 2024
- ANHUI UNIVERSITY
- Xingang Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage switching device
- Patent number 12,027,623
- Issue date Jul 2, 2024
- Murata Manufacturing Co., Ltd.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device including field-effect...
- Patent number 11,996,448
- Issue date May 28, 2024
- Renesas Electronics Corporation
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage devices integrated on semiconductor-on-insulator subst...
- Patent number 11,984,503
- Issue date May 14, 2024
- GLOBALFOUNDRIES DRESDEN MODULE ONE LLC & CO. KG
- Ruchil Kumar Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device with boosted breakdown voltage
- Patent number 11,935,918
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI lateral homogenization field high voltage power semiconductor d...
- Patent number 11,888,022
- Issue date Jan 30, 2024
- University of Electronic Science and Technology of China
- Wentong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with buffered drain
- Patent number 11,876,134
- Issue date Jan 16, 2024
- Texas Instruments Incorporated
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 11,855,203
- Issue date Dec 26, 2023
- University of Electronic Science and Technology of China
- Ming Qiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,810,976
- Issue date Nov 7, 2023
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Weize Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device integration on a common substrate
- Patent number 11,791,377
- Issue date Oct 17, 2023
- Silanna Asia Pte Ltd
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally double-diffused metal oxide semiconductor device
- Patent number 11,742,423
- Issue date Aug 29, 2023
- Southeast University
- Jing Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment using adaptively biased shield plate
- Patent number 11,742,396
- Issue date Aug 29, 2023
- Silanna Asia Pte Ltd
- Stuart B. Molin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source contact formation of MOSFET with gate shield buffer for pitc...
- Patent number 11,735,656
- Issue date Aug 22, 2023
- Silanna Asia Pte Ltd
- Touhidur Rahman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,721,757
- Issue date Aug 8, 2023
- United Microelectronics Corp.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device and manufacturing method thereof
- Patent number 11,682,726
- Issue date Jun 20, 2023
- United Microelectronics Corp.
- Tsung-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS architecture and method for forming
- Patent number 11,664,449
- Issue date May 30, 2023
- Silanna Asia Pte Ltd
- David Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 11,658,211
- Issue date May 23, 2023
- Renesas Electronics Corporation
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a silicon carbide integrated circuit
- Patent number 11,626,325
- Issue date Apr 11, 2023
- Raytheon Systems Limited
- David Trann Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor and manufacture thereof
- Patent number 11,594,631
- Issue date Feb 28, 2023
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage devices integrated on semiconductor-on-insulator subst...
- Patent number 11,552,192
- Issue date Jan 10, 2023
- GLOBALFOUNDRIES DRESDEN MODULE ONE LLC & CO. KG
- Ruchil Kumar Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,552,193
- Issue date Jan 10, 2023
- Semiconductor Components Industries, LLC
- Weize Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage devices integrated on semiconductor-on-insulator subst...
- Patent number 11,545,570
- Issue date Jan 3, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Pinghui Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor on insulator structure comprising a buried high resis...
- Patent number 11,508,612
- Issue date Nov 22, 2022
- GlobalWafers Co., Ltd.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
High-Performance LDMOS Structures
- Publication number 20240421225
- Publication date Dec 19, 2024
- MURATA MANUFACTURING CO., LTD.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Switching Device
- Publication number 20240413243
- Publication date Dec 12, 2024
- MURATA MANUFACTURING CO., LTD.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH THERMOELECTRIC COOLER
- Publication number 20240321677
- Publication date Sep 26, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Jingjing Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
- Publication number 20240313055
- Publication date Sep 19, 2024
- Kabushiki Kaisha Toshiba
- Hirofumi NAGANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240274670
- Publication date Aug 15, 2024
- RENESAS ELECTRONICS CORPORATION
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICE WITH BOOSTED BREAKDOWN VOLTAGE
- Publication number 20240250116
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSIS...
- Publication number 20240243201
- Publication date Jul 18, 2024
- ANHUI UNIVERSITY
- Xingang REN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR DEVICES AND METHODS OF MAKING THEREOF
- Publication number 20240194783
- Publication date Jun 13, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR DEVICES AND INTEGRATION METHODS
- Publication number 20240128374
- Publication date Apr 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH BUFFERED DRAIN
- Publication number 20240105840
- Publication date Mar 28, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240097008
- Publication date Mar 21, 2024
- Rohm Co., Ltd.
- Kazuhiro TAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240097028
- Publication date Mar 21, 2024
- Rohm Co., Ltd.
- Kazuhiro TAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR (SOI) DEVICE HAVING VARIABLE THICKNESS DEVICE...
- Publication number 20240072159
- Publication date Feb 29, 2024
- Manoj Chandrika Reghunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE
- Publication number 20240047578
- Publication date Feb 8, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Weize Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230378347
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gulbagh SINGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained Transistor with Conductive Plate
- Publication number 20230378324
- Publication date Nov 23, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chan-Yu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE ADJUSTMENT USING ADAPTIVELY BIASED SHIELD PLATE
- Publication number 20230369421
- Publication date Nov 16, 2023
- Silanna Asia Pte Ltd
- Stuart B. Molin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE CONTACT FORMATION OF MOSFET WITH GATE SHIELD BUFFER FOR PITC...
- Publication number 20230335639
- Publication date Oct 19, 2023
- Silanna Asia Pte Ltd
- Touhidur Rahman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF HIGH VOLTAGE SEMICONDUCTOR DEVICE
- Publication number 20230335637
- Publication date Oct 19, 2023
- UNITED MICROELECTRONICS CORP.
- Tsung-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE
- Publication number 20230335638
- Publication date Oct 19, 2023
- UNITED MICROELECTRONICS CORP.
- Tsung-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH SILICON-ON-INSULATOR...
- Publication number 20230307539
- Publication date Sep 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20230253456
- Publication date Aug 10, 2023
- RENESAS ELECTRONICS CORPORATION
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TRENCH ISOLATION STRUCTURES IN A TRANSITI...
- Publication number 20230238459
- Publication date Jul 27, 2023
- Infineon Technologies Austria AG
- Lars Müller-Meskamp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHODS OF PRODUCING A POWER SEMICON...
- Publication number 20230197846
- Publication date Jun 22, 2023
- Manoj Chandrika Reghunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE DEVICES INTEGRATED ON SEMICONDUCTOR-ON-INSULATOR SUBST...
- Publication number 20230115000
- Publication date Apr 13, 2023
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- RUCHIL KUMAR JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH BUFFERED DRAIN
- Publication number 20230101691
- Publication date Mar 30, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ON INSULATOR STRUCTURE COMPRISING A BURIED HIGH RESIS...
- Publication number 20230072964
- Publication date Mar 9, 2023
- GLOBALWAFERS CO., LTD.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI LATERAL HOMOGENIZATION FIELD HIGH VOLTAGE POWER SEMICONDUCTOR D...
- Publication number 20230053369
- Publication date Feb 23, 2023
- University of Electronic Science and Technology of China
- Wentong ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICE WITH BOOSTED BREAKDOWN VOLTAGE
- Publication number 20220406886
- Publication date Dec 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220393027
- Publication date Dec 8, 2022
- RENESAS ELECTRONICS CORPORATION
- Makoto KOSHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS

with a substrate comprising an insulating layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Strained transistor with conductive plate

Connection arrangements for integrated lateral diffusion field effe...

Semiconductor device

Semiconductor device with lateral transistor

High voltage diode on SOI substrate with trench-modified current path

Threshold voltage adjustment using adaptively biased shield plate

Manufacturing method of high voltage semiconductor device

Silicon-on-insulator metal-oxide-semiconductor field-effect transis...

High voltage switching device

Manufacturing method of semiconductor device including field-effect...

High-voltage devices integrated on semiconductor-on-insulator subst...

High voltage device with boosted breakdown voltage

SOI lateral homogenization field high voltage power semiconductor d...

Transistor device with buffered drain

Power semiconductor device

Semiconductor device

Power device integration on a common substrate

Laterally double-diffused metal oxide semiconductor device

Threshold voltage adjustment using adaptively biased shield plate

Source contact formation of MOSFET with gate shield buffer for pitc...

Semiconductor device

High voltage semiconductor device and manufacturing method thereof

LDMOS architecture and method for forming

Semiconductor device and manufacturing method of the same

Method of making a silicon carbide integrated circuit

LDMOS transistor and manufacture thereof

High-voltage devices integrated on semiconductor-on-insulator subst...

Semiconductor device

High-voltage devices integrated on semiconductor-on-insulator subst...

Semiconductor on insulator structure comprising a buried high resis...

Patents Applicationslast 30 patents

High-Performance LDMOS Structures

High Voltage Switching Device

SEMICONDUCTOR DEVICES WITH THERMOELECTRIC COOLER

SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE

SEMICONDUCTOR DEVICE

HIGH VOLTAGE DEVICE WITH BOOSTED BREAKDOWN VOLTAGE

SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSIS...

METAL OXIDE SEMICONDUCTOR DEVICES AND METHODS OF MAKING THEREOF

METAL OXIDE SEMICONDUCTOR DEVICES AND INTEGRATION METHODS

TRANSISTOR DEVICE WITH BUFFERED DRAIN

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SILICON-ON-INSULATOR (SOI) DEVICE HAVING VARIABLE THICKNESS DEVICE...

METHOD OF FORMING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Strained Transistor with Conductive Plate

THRESHOLD VOLTAGE ADJUSTMENT USING ADAPTIVELY BIASED SHIELD PLATE

SOURCE CONTACT FORMATION OF MOSFET WITH GATE SHIELD BUFFER FOR PITC...

MANUFACTURING METHOD OF HIGH VOLTAGE SEMICONDUCTOR DEVICE

HIGH VOLTAGE SEMICONDUCTOR DEVICE

LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH SILICON-ON-INSULATOR...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE WITH TRENCH ISOLATION STRUCTURES IN A TRANSITI...

POWER SEMICONDUCTOR DEVICE AND METHODS OF PRODUCING A POWER SEMICON...

HIGH-VOLTAGE DEVICES INTEGRATED ON SEMICONDUCTOR-ON-INSULATOR SUBST...

TRANSISTOR DEVICE WITH BUFFERED DRAIN

SEMICONDUCTOR ON INSULATOR STRUCTURE COMPRISING A BURIED HIGH RESIS...

SOI LATERAL HOMOGENIZATION FIELD HIGH VOLTAGE POWER SEMICONDUCTOR D...

HIGH VOLTAGE DEVICE WITH BOOSTED BREAKDOWN VOLTAGE

SEMICONDUCTOR DEVICE