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H01L29/1083

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/1083with an inactive supplementary region

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having deep trench structure and method of man...
- Patent number 12,183,639
- Issue date Dec 31, 2024
- SK keyfoundry Inc.
- Yang Beom Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor, ternary inverter comprising same, and transistor manufa...
- Patent number 12,154,950
- Issue date Nov 26, 2024
- UNIST (Ulsan National Institute of Science and Technology)
- Kyung Rok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal method to integrate non-volatile memory (NVM) into logic or bi...
- Patent number 12,144,173
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 12,142,638
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Meng-Hsuan Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Punch through stopper in bulk finFET device
- Patent number 12,119,393
- Issue date Oct 15, 2024
- Adeia Semiconductor Solutions LLC
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interleaved string drivers, string driver with narrow active region...
- Patent number 12,112,804
- Issue date Oct 8, 2024
- Micron Technology, Inc.
- Michael A. Smith
- G11 - INFORMATION STORAGE
Information Patent Grant
LDMOS with self-aligned body and hybrid source
- Patent number 12,113,106
- Issue date Oct 8, 2024
- Amplexia, LLC
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge guard ring with complementary drain extende...
- Patent number 12,094,970
- Issue date Sep 17, 2024
- Texas Instruments Incorporated
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully strained channel
- Patent number 12,080,761
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an undoped region under a source/drain
- Patent number 12,068,395
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Ku Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar and non-planar FET-based electrostatic discharge protection...
- Patent number 12,051,691
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Po-Lin Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Breakdown voltage capability of high voltage device
- Patent number 12,027,526
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Chih Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage switching device
- Patent number 12,027,623
- Issue date Jul 2, 2024
- Murata Manufacturing Co., Ltd.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel field effect transistor and ternary inverter comprising same
- Patent number 12,009,393
- Issue date Jun 11, 2024
- UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Kyung Rok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Half-bridge circuit including integrated level shifter transistor
- Patent number 12,002,804
- Issue date Jun 4, 2024
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device including field-effect...
- Patent number 11,996,448
- Issue date May 28, 2024
- Renesas Electronics Corporation
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having gate structures with slanted sidewalls
- Patent number 11,990,509
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded semiconductor region for latch-up susceptibility improvement
- Patent number 11,973,080
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors (FETs) employing edge transistor current l...
- Patent number 11,948,978
- Issue date Apr 2, 2024
- QUALCOMM Incorporated
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit with edge structure to decrease le...
- Patent number 11,948,937
- Issue date Apr 2, 2024
- Fuji Electric Co., Ltd.
- Yoshiaki Toyoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of fabricating the semiconductor...
- Patent number 11,942,513
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Guan-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,942,480
- Issue date Mar 26, 2024
- Samsung Electronics Co., Ltd.
- Il Min Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure and method for manufacturing thereof
- Patent number 11,929,398
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage switch device
- Patent number 11,929,434
- Issue date Mar 12, 2024
- eMemory Technology Inc.
- Chih-Hsin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin loss prevention
- Patent number 11,923,250
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Ju Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including transistors sharing gates with struc...
- Patent number 11,908,859
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Feng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated chip with improved latch-up immunity
- Patent number 11,908,860
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET and memory cell having improved drain current through back b...
- Patent number 11,908,899
- Issue date Feb 20, 2024
- Zeno Semiconductor, Inc.
- Jin-Woo Han
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistor isolation structures
- Patent number 11,901,415
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ta Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulator (SOI) device and forming method thereof
- Patent number 11,888,025
- Issue date Jan 30, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTERLEAVED STRING DRIVERS, STRING DRIVER WITH NARROW ACTIVE REGION...
- Publication number 20240428859
- Publication date Dec 26, 2024
- Micron Technology, Inc.
- Michael A. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Switching Device
- Publication number 20240413243
- Publication date Dec 12, 2024
- MURATA MANUFACTURING CO., LTD.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING COUNTER-DOPED STRUCTURES
- Publication number 20240405075
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiao-Chun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND ITS MANUFACTURING METHOD
- Publication number 20240395920
- Publication date Nov 28, 2024
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Li Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Gate-All-Around Device
- Publication number 20240387638
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY CELL
- Publication number 20240389320
- Publication date Nov 21, 2024
- Fuh-cheng Jong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240379764
- Publication date Nov 14, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Yongliang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH EMBEDDED EPITAXIAL STRUCTURE
- Publication number 20240379862
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ting-Yeh CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY STRAINED CHANNEL
- Publication number 20240371941
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING FIELD EFFECT TRANSISTOR FORMED ON SO...
- Publication number 20240363750
- Publication date Oct 31, 2024
- RENESAS ELECTRONICS CORPORATION
- Kazuya UEJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING AN UNDOPED REGION UNDER A SOURCE/DRAIN
- Publication number 20240363729
- Publication date Oct 31, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
- Meng-Ku Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20240355885
- Publication date Oct 24, 2024
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR AND NON-PLANAR FET-BASED ELECTROSTATIC DISCHARGE PROTECTION...
- Publication number 20240347531
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Lin PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BREAKDOWN VOLTAGE CAPABILITY OF HIGH VOLTAGE DEVICE
- Publication number 20240321894
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Chih CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR WITH EXTENDED SOURCE/DRAIN
- Publication number 20240282839
- Publication date Aug 22, 2024
- POSTECH Research and Business Development Foundation
- Rock-Hyun Baek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240274670
- Publication date Aug 15, 2024
- RENESAS ELECTRONICS CORPORATION
- Yoshiki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices Having Funnel-Shaped Gate Structures
- Publication number 20240266397
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED SEMICONDUCTOR REGION FOR A LATCH-UP SUSCEPTIBILITY IMPROVE...
- Publication number 20240243129
- Publication date Jul 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SEMICONDUCTOR...
- Publication number 20240194735
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- GUAN-LIN CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CHIP WITH IMPROVED LATCH-UP IMMUNITY
- Publication number 20240153949
- Publication date May 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Wen Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TRANSISTORS SHARING GATES WITH STRUC...
- Publication number 20240153950
- Publication date May 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Feng CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR ISOLATION STRUCTURES
- Publication number 20240145546
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ta YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET and Memory Cell Having Improved Drain Current Through Back B...
- Publication number 20240145547
- Publication date May 2, 2024
- Zeno Semiconductor, Inc.
- Jin-Woo Han
- G11 - INFORMATION STORAGE
Information Patent Application
SILICON ON INSULATOR DEVICE
- Publication number 20240128317
- Publication date Apr 18, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC FIELD-EFFECT TRANSISTORS WITH A HYBRID WELL
- Publication number 20240120420
- Publication date Apr 11, 2024
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Stefan Dünkel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE HAVING SCHOTTKY BARRIER DIODE
- Publication number 20240105838
- Publication date Mar 28, 2024
- KEY FOUNDRY CO., LTD.
- Tae Hoon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE
- Publication number 20240105723
- Publication date Mar 28, 2024
- Invention And Collaboration Laboratory Pte. Ltd.
- Chao-Chun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH ADJUSTABLE EFFECTIVE GATE LENGTH
- Publication number 20240097029
- Publication date Mar 21, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Loss Prevention
- Publication number 20240087961
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Ju CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW GATE CURRENT JUNCTION FIELD EFFECT TRANSISTOR DEVICE ARCHITECTURE
- Publication number 20240088229
- Publication date Mar 14, 2024
- Analog Devices International Unlimited Company
- Edward John Coyne
- H01 - BASIC ELECTRIC ELEMENTS

with an inactive supplementary region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device having deep trench structure and method of man...

Transistor, ternary inverter comprising same, and transistor manufa...

Seal method to integrate non-volatile memory (NVM) into logic or bi...

Semiconductor structure

Punch through stopper in bulk finFET device

Interleaved string drivers, string driver with narrow active region...

LDMOS with self-aligned body and hybrid source

Electrostatic discharge guard ring with complementary drain extende...

Fully strained channel

Method for forming an undoped region under a source/drain

Planar and non-planar FET-based electrostatic discharge protection...

Breakdown voltage capability of high voltage device

High voltage switching device

Tunnel field effect transistor and ternary inverter comprising same

Half-bridge circuit including integrated level shifter transistor

Manufacturing method of semiconductor device including field-effect...

Semiconductor devices having gate structures with slanted sidewalls

Embedded semiconductor region for latch-up susceptibility improvement

Field-effect transistors (FETs) employing edge transistor current l...

Semiconductor integrated circuit with edge structure to decrease le...

Semiconductor structure and method of fabricating the semiconductor...

Semiconductor device

FinFET structure and method for manufacturing thereof

High voltage switch device

Fin loss prevention

Semiconductor device including transistors sharing gates with struc...

Integrated chip with improved latch-up immunity

MOSFET and memory cell having improved drain current through back b...

Transistor isolation structures

Silicon on insulator (SOI) device and forming method thereof

Patents Applicationslast 30 patents

INTERLEAVED STRING DRIVERS, STRING DRIVER WITH NARROW ACTIVE REGION...

High Voltage Switching Device

SEMICONDUCTOR DEVICES HAVING COUNTER-DOPED STRUCTURES

HIGH ELECTRON MOBILITY TRANSISTOR AND ITS MANUFACTURING METHOD

Semiconductor Gate-All-Around Device

NON-VOLATILE MEMORY CELL

GATE-ALL-AROUND TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE STRUCTURE WITH EMBEDDED EPITAXIAL STRUCTURE

FULLY STRAINED CHANNEL

SEMICONDUCTOR DEVICE INCLUDING FIELD EFFECT TRANSISTOR FORMED ON SO...

METHOD FOR FORMING AN UNDOPED REGION UNDER A SOURCE/DRAIN

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

PLANAR AND NON-PLANAR FET-BASED ELECTROSTATIC DISCHARGE PROTECTION...

BREAKDOWN VOLTAGE CAPABILITY OF HIGH VOLTAGE DEVICE

GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR WITH EXTENDED SOURCE/DRAIN

SEMICONDUCTOR DEVICE

Semiconductor Devices Having Funnel-Shaped Gate Structures

EMBEDDED SEMICONDUCTOR REGION FOR A LATCH-UP SUSCEPTIBILITY IMPROVE...

SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SEMICONDUCTOR...

INTEGRATED CHIP WITH IMPROVED LATCH-UP IMMUNITY

SEMICONDUCTOR DEVICE INCLUDING TRANSISTORS SHARING GATES WITH STRUC...

TRANSISTOR ISOLATION STRUCTURES

MOSFET and Memory Cell Having Improved Drain Current Through Back B...

SILICON ON INSULATOR DEVICE

FERROELECTRIC FIELD-EFFECT TRANSISTORS WITH A HYBRID WELL

HIGH VOLTAGE SEMICONDUCTOR DEVICE HAVING SCHOTTKY BARRIER DIODE

TRANSISTOR STRUCTURE

FIELD EFFECT TRANSISTOR WITH ADJUSTABLE EFFECTIVE GATE LENGTH

Fin Loss Prevention

LOW GATE CURRENT JUNCTION FIELD EFFECT TRANSISTOR DEVICE ARCHITECTURE