with an non-uniform gate

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CPC
H01L29/7856

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7856with an non-uniform gate

Industries

Patents Grantslast 30 patents

Information Patent Grant
Fin field-effect transistor device and method of forming the same
- Patent number 12,300,742
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,237,210
- Issue date Feb 25, 2025
- Samsung Electronics Co., Ltd.
- Chae Ho Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having fin structure
- Patent number 12,237,322
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Shun-Li Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure including multi-width semiconductor fins
- Patent number 12,230,633
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with gate-all-around...
- Patent number 12,224,350
- Issue date Feb 11, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor and method for forming same
- Patent number 12,211,939
- Issue date Jan 28, 2025
- Robert Bosch GmbH
- Jens Baringhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure
- Patent number 12,183,652
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage modulation for gate-all-around FET architecture
- Patent number 12,183,798
- Issue date Dec 31, 2024
- Applied Materials, Inc.
- Steven C. H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor having conformal and non-conformal gate...
- Patent number 12,170,321
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuei-Lun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structures and methods of forming the same in field-effec...
- Patent number 12,170,334
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shi Ning Ju
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method and system for fabrication of a vertical fin-based field eff...
- Patent number 12,125,914
- Issue date Oct 22, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,119,392
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform implant regions in a semiconductor ridge of a FinfET
- Patent number 12,113,121
- Issue date Oct 8, 2024
- Texas Instruments Incorporated
- Ming-Yeh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained gate semiconductor device having an interlayer dielectric...
- Patent number 12,100,767
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,094,956
- Issue date Sep 17, 2024
- United Microelectronics Corp.
- Chin-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,087,862
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming source/drain regions with expanded widths
- Patent number 12,034,077
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device active region profile and method of forming th...
- Patent number 12,027,626
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-threshold voltage devices and associated techniques and confi...
- Patent number 12,021,141
- Issue date Jun 25, 2024
- Sony Group Corporation
- Joseph M. Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch profile control of polysilicon structures of semiconductor dev...
- Patent number 12,014,960
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a necked semiconductor body and method...
- Patent number 12,015,087
- Issue date Jun 18, 2024
- Intel Corporation
- Bernhard Sell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with source/drain multi-layer structure and...
- Patent number 11,990,550
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with metal gate stack
- Patent number 11,929,413
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jia-Chuan You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 11,923,428
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chi Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET transistor
- Patent number 11,908,941
- Issue date Feb 20, 2024
- Samsung Electronics Co., Ltd.
- Sang U. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate methods that include treating spacers to widen gate
- Patent number 11,908,695
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method of forming the same
- Patent number 11,908,920
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric isolation layer between a nanowire transistor and a subs...
- Patent number 11,901,458
- Issue date Feb 13, 2024
- Intel Corporation
- Bruce E. Beattie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures with conductive gate taps for a...
- Patent number 11,888,043
- Issue date Jan 30, 2024
- Intel Corporation
- Elliot Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device and method of fabrication thereof
- Patent number 11,855,151
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- I-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING LOW-RESISTANCE GATE CONNECTOR
- Publication number 20250015127
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tien Yu Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240395905
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240395909
- Publication date Nov 28, 2024
- UNITED MICROELECTRONICS CORP.
- Chin-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH LOCAL ISOLATIO...
- Publication number 20240387706
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE ACTIVE REGION PROFILE AND METHOD OF FORMING TH...
- Publication number 20240339541
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240322043
- Publication date Sep 26, 2024
- POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
- WOOYEOL MAENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED GATE-ALL-AROUND FINFET AND METHOD FORMING THE SAME
- Publication number 20240322044
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng Chiang
- B82 - NANO-TECHNOLOGY
Information Patent Application
MULTI-THRESHOLD VOLTAGE DEVICES AND ASSOCIATED TECHNIQUES AND CONFI...
- Publication number 20240322037
- Publication date Sep 26, 2024
- SONY GROUP CORPORATION
- Joseph M. Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN MULTI-LAYER STRUCTURE AND...
- Publication number 20240266439
- Publication date Aug 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...
- Publication number 20240243203
- Publication date Jul 18, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK
- Publication number 20240222458
- Publication date Jul 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD...
- Publication number 20240222509
- Publication date Jul 4, 2024
- Intel Corporation
- Bernhard SELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20240186390
- Publication date Jun 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chi PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240154025
- Publication date May 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Replacement Gate Methods That Include Treating Spacers to Widen Gate
- Publication number 20240145250
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shu-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC ISOLATION LAYER BETWEEN A NANOWIRE TRANSISTOR AND A SUBS...
- Publication number 20240145598
- Publication date May 2, 2024
- Intel Corporation
- Bruce E. Beattie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES WITH CONDUCTIVE GATE TAPS FOR A...
- Publication number 20240120397
- Publication date Apr 11, 2024
- Intel Corporation
- Elliot TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Gate Device And Method Of Fabrication Thereof
- Publication number 20240105778
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- I-Sheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...
- Publication number 20240096988
- Publication date Mar 21, 2024
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION
- Publication number 20240088217
- Publication date Mar 14, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD-EFFECT TRANSISTOR AND METHOD FOR FORMING SAME
- Publication number 20240055528
- Publication date Feb 15, 2024
- ROBERT BOSCH GmbH
- Jens Baringhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...
- Publication number 20240030348
- Publication date Jan 25, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
- Publication number 20240021693
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuei-Lun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH GATE EXTENSION
- Publication number 20240014324
- Publication date Jan 11, 2024
- NXP B.V.
- Viet Thanh Dinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PREVENTING EPI DAMAGE DURING ISOLATION PROCESSES
- Publication number 20230420302
- Publication date Dec 28, 2023
- TAIWAN SEMICONDUTOR MANUFACTURING COMPANY, LTD.
- Tzu-Ging Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FABRICATION OF A VERTICAL FIN-BASED FIELD EFF...
- Publication number 20230411525
- Publication date Dec 21, 2023
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM SEMICONDUCTOR ACTIVE FIN WIDTH
- Publication number 20230402545
- Publication date Dec 14, 2023
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME IN FIELD-EFFEC...
- Publication number 20230387311
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shi Ning Ju
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20230387267
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE INCLUDING MULTI-LENGTH SOURCE/DRAIN CO...
- Publication number 20230378177
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon-Jhy LIAW
- H01 - BASIC ELECTRIC ELEMENTS

with an non-uniform gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Fin field-effect transistor device and method of forming the same

Semiconductor device

Semiconductor device having fin structure

Integrated circuit structure including multi-width semiconductor fins

Self-aligned gate endcap (SAGE) architectures with gate-all-around...

Vertical field-effect transistor and method for forming same

Integrated circuit structure

Threshold voltage modulation for gate-all-around FET architecture

Fin field effect transistor having conformal and non-conformal gate...

Isolation structures and methods of forming the same in field-effec...

Method and system for fabrication of a vertical fin-based field eff...

Semiconductor device and method

Uniform implant regions in a semiconductor ridge of a FinfET

Strained gate semiconductor device having an interlayer dielectric...

Semiconductor device and method for fabricating the same

Semiconductor device

Method of forming source/drain regions with expanded widths

Semiconductor device active region profile and method of forming th...

Multi-threshold voltage devices and associated techniques and confi...

Etch profile control of polysilicon structures of semiconductor dev...

Semiconductor device having a necked semiconductor body and method...

Semiconductor structure with source/drain multi-layer structure and...

Semiconductor device structure with metal gate stack

Fin field-effect transistor and method of forming the same

FinFET transistor

Replacement gate methods that include treating spacers to widen gate

Fin field-effect transistor device and method of forming the same

Dielectric isolation layer between a nanowire transistor and a subs...

Contact over active gate structures with conductive gate taps for a...

Multi-gate device and method of fabrication thereof

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING LOW-RESISTANCE GATE CONNECTOR

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH LOCAL ISOLATIO...

SEMICONDUCTOR DEVICE ACTIVE REGION PROFILE AND METHOD OF FORMING TH...

INTEGRATED CIRCUIT DEVICE

STACKED GATE-ALL-AROUND FINFET AND METHOD FORMING THE SAME

MULTI-THRESHOLD VOLTAGE DEVICES AND ASSOCIATED TECHNIQUES AND CONFI...

SEMICONDUCTOR STRUCTURE WITH SOURCE/DRAIN MULTI-LAYER STRUCTURE AND...

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...

SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK

SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD...

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME

Replacement Gate Methods That Include Treating Spacers to Widen Gate

DIELECTRIC ISOLATION LAYER BETWEEN A NANOWIRE TRANSISTOR AND A SUBS...

CONTACT OVER ACTIVE GATE STRUCTURES WITH CONDUCTIVE GATE TAPS FOR A...

Multi-Gate Device And Method Of Fabrication Thereof

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...

BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION

VERTICAL FIELD-EFFECT TRANSISTOR AND METHOD FOR FORMING SAME

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND...

GATE STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME

FINFET WITH GATE EXTENSION

METHODS FOR PREVENTING EPI DAMAGE DURING ISOLATION PROCESSES

METHOD AND SYSTEM FOR FABRICATION OF A VERTICAL FIN-BASED FIELD EFF...

UNIFORM SEMICONDUCTOR ACTIVE FIN WIDTH

ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME IN FIELD-EFFEC...

SEMICONDUCTOR DEVICE AND METHOD

INTEGRATED CIRCUIT STRUCTURE INCLUDING MULTI-LENGTH SOURCE/DRAIN CO...